JPS6086545A - Mask protective film - Google Patents
Mask protective filmInfo
- Publication number
- JPS6086545A JPS6086545A JP58194579A JP19457983A JPS6086545A JP S6086545 A JPS6086545 A JP S6086545A JP 58194579 A JP58194579 A JP 58194579A JP 19457983 A JP19457983 A JP 19457983A JP S6086545 A JPS6086545 A JP S6086545A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- photomask
- pattern
- film
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Abstract
Description
【発明の詳細な説明】
妹)発明の技術分野
本発明はマスク表面を保護するためのマスク保護膜の改
良に関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to an improvement in a mask protective film for protecting a mask surface.
(至)従来技術と問題点
半導体集積回路(IC)などの製造分野において、機能
領域、電極コンタクト窓、配線などのパターンの形成は
、フォト10セヌ工程において、半導体基板上の感光性
樹脂(レジメト)膜に、フォトマスクを用いて紫外線な
どを照射し、該フォトマフ’)(Dパターンヲ転写して
、該パターンをマスクにしてフォトエツチングにより形
成される。(To) Prior Art and Problems In the field of manufacturing semiconductor integrated circuits (ICs), patterns such as functional areas, electrode contact windows, and wiring are formed using photosensitive resin (regime) on the semiconductor substrate in the photo-10-senu process. ) film is irradiated with ultraviolet rays or the like using a photomask, the photomuff ')(D pattern is transferred thereto, and photoetching is performed using the pattern as a mask).
このフォトプロセス工程において使用するフォトマスク
は通常ガラス又は石英などの透明体基板上にたとえばク
ロムなどの金属薄膜でパターンを形成させたものが用い
られている。The photomask used in this photoprocessing step is usually one in which a pattern is formed with a thin film of metal such as chromium on a transparent substrate such as glass or quartz.
又フォトマスクは一般に使用する迄の保管中に透明体基
板に形成されたクロームパターンの損傷や、フォトマス
ク表面に塵、埃などの付着汚染を防止するため第1図に
示すようにパターンが形成された面にビニ−1し系樹脂
膜よりなる表面を保護するためのマスク保護膜が被覆さ
れ、更にビニール袋などに収納された状態で使用直前ま
で保管されている。同図においてlはガラス又は石英な
どよりなる透明体基板、2は該基板上に形成されたクロ
ム薄膜よりなるパターン、3はビニール系樹脂膜よりな
るマスク保護膜を示す。Additionally, during storage of photomasks until they are used, a pattern is formed as shown in Figure 1 to prevent damage to the chrome pattern formed on the transparent substrate and to prevent contamination such as dust and dirt from adhering to the photomask surface. The exposed surface is coated with a mask protective film made of a vinyl-based resin film to protect the surface, and the product is stored in a plastic bag or the like until immediately before use. In the figure, 1 is a transparent substrate made of glass or quartz, 2 is a pattern made of a thin chromium film formed on the substrate, and 3 is a mask protective film made of a vinyl resin film.
所でフォトプロセス工程において、上記のように構成さ
れたフォトマスクを使用する際しこは第2図の斜視図に
示すように基板l上のマスク保護膜3をはがして清浄な
マスク而を表出して使用する。By the way, when using the photomask constructed as described above in the photoprocessing step, the mask protective film 3 on the substrate 1 must be peeled off to expose a clean mask as shown in the perspective view of FIG. Take it out and use it.
尚第2図においては前回と同一符号を付している。In FIG. 2, the same reference numerals as before are given.
しかしながら此のマスク保護膜3を剥離する際に、該マ
スク保護膜3と透明体基板lとの門に静電気による放電
によって、基板l上のクロムパターン2の一部、特にエ
ツジ部を破壊損傷する現象があった。However, when this mask protective film 3 is peeled off, a part of the chrome pattern 2 on the substrate l, especially the edge part, is damaged due to static electricity discharge at the gate between the mask protective film 3 and the transparent substrate l. There was a phenomenon.
特に最近の半導体素子の高集積化が進む中で、パターン
の寸法は増々微細化され、此のパターンの一部欠陥は製
造歩留の低下をもたらす要因となり、又最近のマスク自
動検査装置の検査精度向上によっても上記微細欠陥の検
査が確寮に行なわれフォトマスクの歩留低下となる問題
があった。In particular, as semiconductor devices have become increasingly highly integrated, the dimensions of patterns have become increasingly finer, and defects in some of these patterns have become a factor that lowers manufacturing yields. Even with improved accuracy, there was a problem in that the above-mentioned microscopic defects were inspected on a regular basis, resulting in a decrease in the yield of photomasks.
(C)発明の目的
本発明の目的はかかる問題点に濫みなされたもので、マ
スク保護膜の静電気の帯’i’1lt−防止し、該保護
膜の剥離時に生ずるパターンの静電気破壊を防止するこ
とが可能なマスク保護膜の提供にある。(C) Object of the Invention The object of the present invention is to prevent static electricity from forming on a mask protective film and prevent electrostatic damage to the pattern that occurs when the protective film is peeled off. The purpose of the present invention is to provide a mask protective film that can protect the mask.
(7)発明の構成
その目的を達成するため、本発明はマスク保護膜中に導
電性微粉末を含有してなることを特徴とする。(7) Structure of the Invention In order to achieve the object, the present invention is characterized in that a mask protective film contains conductive fine powder.
(61) 発明の実施例 以下本発明の実施例について図面を参照して説明する。(61) Examples of the invention Embodiments of the present invention will be described below with reference to the drawings.
第8図に本発明の一実施例を説明するための要部断面図
を示す。FIG. 8 shows a sectional view of essential parts for explaining one embodiment of the present invention.
同図において、たとえば厚さ約2.3111のガラス基
板ll上に真空蒸着或はスパッタ蒸着などによって厚さ
約100OAの金属クロム薄膜を蒸着し、該クロム薄膜
をVシスト膜をマスクにして四塩化炭素(CC!14
)などのガスを用いてプラズマエツチング処理によって
所望のクロムパターン12を形成しフォトマスクが完成
する。In the same figure, for example, a metallic chromium thin film with a thickness of about 100 OA is deposited on a glass substrate 11 with a thickness of about 2.3111 mm by vacuum evaporation or sputter deposition, and the chromium thin film is coated with tetrachloride using the V cyst film as a mask. Carbon (CC!14
A desired chromium pattern 12 is formed by plasma etching using a gas such as ), and a photomask is completed.
次に酢酸ビニール樹脂溶液に約lO%の導電性微粉末、
たとえば酸化鉄、或はカーボンの粒度約0.1μm程度
の導電性微粉末を前記酢酸ビニール樹脂溶液中に混合分
散させる。Next, about 10% of conductive fine powder was added to the vinyl acetate resin solution.
For example, conductive fine powder of iron oxide or carbon having a particle size of about 0.1 μm is mixed and dispersed in the vinyl acetate resin solution.
上記導電性微粉末が混合分散された酢酸ビニ−Iし樹脂
溶液を前記フォトマスク上に滴下し、ローラーなどによ
る自動機械によって該酢酸ビニール樹脂溶液を前記フォ
トマスク上に伸ばし、厚さ約100μn+程度の導電性
のマスク保護膜18が被覆され、排気中のドラフト内に
おいて常温乾燥する。A vinyl acetate resin solution in which the conductive fine powder is mixed and dispersed is dropped onto the photomask, and the vinyl acetate resin solution is spread over the photomask using an automatic machine such as a roller to a thickness of approximately 100 μm+. A conductive mask protective film 18 is coated thereon, and the film is dried at room temperature in an exhaust fume hood.
上述したマスク保護膜18を有するフォトマスクは、使
用時の該保護膜18をはがす際に、含有された導電性微
粉末によって該保護11k113の電気抵抗が下がって
導電性のため、ガラス基板11と保護膜13との間の静
電気の放電によるパターン12の破壊損傷を防止するこ
とがβJ能となる。When the photomask having the above-mentioned mask protective film 18 is peeled off during use, the electrical resistance of the protective film 11k113 is lowered by the conductive fine powder contained therein, making it conductive, so that the protective film 18 does not connect to the glass substrate 11. The βJ function is to prevent the pattern 12 from being destroyed or damaged due to electrostatic discharge between the pattern 12 and the protective film 13.
従って欠陥のない正常なパターン形状を有するフォトマ
スクの維持及び使用が可(mとなる。Therefore, it is possible to maintain and use a photomask having a normal pattern shape without defects (m).
(0発明の詳細
な説明したごとく本発明によれば、導電性微粉末を含有
してなるマスク保護膜によって、静電気の帯電を防止す
ることにより、該保護膜の剥離時におけるパターンの静
電破壊を防止することが可能となり、製品の歩留向上1
品質向上に効果がある。(0) According to the present invention, the mask protective film containing conductive fine powder prevents static electricity from being charged, thereby causing electrostatic damage to the pattern when the protective film is peeled off. It is now possible to prevent
Effective in improving quality.
第1図は従来例を説明するための要部断面図、第2図は
マスク保護膜をはがす状態を示す斜視図、第8図は本発
明の一実施例を説明するための要部断面図である。
図において11はガラス基板、12はクロム薄膜よりな
るパターン、18は導電性微粉末を含有してなるマスク
保護膜を示す。FIG. 1 is a cross-sectional view of a main part for explaining a conventional example, FIG. 2 is a perspective view showing a state in which a mask protective film is peeled off, and FIG. It is. In the figure, 11 is a glass substrate, 12 is a pattern made of a chromium thin film, and 18 is a mask protective film containing conductive fine powder.
Claims (1)
護膜。A mask protective film characterized by containing conductive fine powder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58194579A JPS6086545A (en) | 1983-10-17 | 1983-10-17 | Mask protective film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58194579A JPS6086545A (en) | 1983-10-17 | 1983-10-17 | Mask protective film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6086545A true JPS6086545A (en) | 1985-05-16 |
JPS633302B2 JPS633302B2 (en) | 1988-01-22 |
Family
ID=16326886
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58194579A Granted JPS6086545A (en) | 1983-10-17 | 1983-10-17 | Mask protective film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6086545A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62139547A (en) * | 1985-12-13 | 1987-06-23 | Daicel Chem Ind Ltd | Photosensitive laminate body having anti electrostatic property |
JPS6446738A (en) * | 1987-08-17 | 1989-02-21 | Fuaintetsuku Kenkyusho Kk | Antistatic photosensitive laminated film |
EP0310412A2 (en) * | 1987-09-30 | 1989-04-05 | Sharp Kabushiki Kaisha | Improvements in photo-masks |
JPH01173040A (en) * | 1987-12-28 | 1989-07-07 | Dainippon Printing Co Ltd | Glass pattern for photoengraving |
US5079113A (en) * | 1988-09-29 | 1992-01-07 | Sharp Kabushiki Kaisha | Photo-mask |
US5178976A (en) * | 1990-09-10 | 1993-01-12 | General Electric Company | Technique for preparing a photo-mask for imaging three-dimensional objects |
US5260150A (en) * | 1987-09-30 | 1993-11-09 | Sharp Kabushiki Kaisha | Photo-mask with light shielding film buried in substrate |
GB2301050A (en) * | 1995-05-12 | 1996-11-27 | Kimoto Company Limited | Antistatic masking film |
JP2001056544A (en) * | 1999-08-18 | 2001-02-27 | Dainippon Printing Co Ltd | Halftone phase shift photomask, blanks for same and pattern forming method for using same |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0421303U (en) * | 1990-06-14 | 1992-02-24 | ||
CN108496228B (en) | 2016-09-20 | 2020-11-03 | 古河电气工业株式会社 | Flat cable, method of manufacturing flat cable, and rotary connector device including flat cable |
-
1983
- 1983-10-17 JP JP58194579A patent/JPS6086545A/en active Granted
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62139547A (en) * | 1985-12-13 | 1987-06-23 | Daicel Chem Ind Ltd | Photosensitive laminate body having anti electrostatic property |
JPS6446738A (en) * | 1987-08-17 | 1989-02-21 | Fuaintetsuku Kenkyusho Kk | Antistatic photosensitive laminated film |
EP0310412A2 (en) * | 1987-09-30 | 1989-04-05 | Sharp Kabushiki Kaisha | Improvements in photo-masks |
US5260150A (en) * | 1987-09-30 | 1993-11-09 | Sharp Kabushiki Kaisha | Photo-mask with light shielding film buried in substrate |
JPH01173040A (en) * | 1987-12-28 | 1989-07-07 | Dainippon Printing Co Ltd | Glass pattern for photoengraving |
US5079113A (en) * | 1988-09-29 | 1992-01-07 | Sharp Kabushiki Kaisha | Photo-mask |
US5178976A (en) * | 1990-09-10 | 1993-01-12 | General Electric Company | Technique for preparing a photo-mask for imaging three-dimensional objects |
GB2301050A (en) * | 1995-05-12 | 1996-11-27 | Kimoto Company Limited | Antistatic masking film |
GB2301050B (en) * | 1995-05-12 | 1999-06-23 | Kimoto Company Limited | Masking films |
JP2001056544A (en) * | 1999-08-18 | 2001-02-27 | Dainippon Printing Co Ltd | Halftone phase shift photomask, blanks for same and pattern forming method for using same |
EP1132772A1 (en) * | 1999-08-18 | 2001-09-12 | Dai Nippon Printing Co., Ltd. | Halftone phase shift photomask and blanks for halftone phase shift photomask for it and pattern forming method using this |
EP1132772A4 (en) * | 1999-08-18 | 2003-11-19 | Dainippon Printing Co Ltd | Halftone phase shift photomask and blanks for halftone phase shift photomask for it and pattern forming method using this |
Also Published As
Publication number | Publication date |
---|---|
JPS633302B2 (en) | 1988-01-22 |
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