JPS633302B2 - - Google Patents
Info
- Publication number
- JPS633302B2 JPS633302B2 JP19457983A JP19457983A JPS633302B2 JP S633302 B2 JPS633302 B2 JP S633302B2 JP 19457983 A JP19457983 A JP 19457983A JP 19457983 A JP19457983 A JP 19457983A JP S633302 B2 JPS633302 B2 JP S633302B2
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- mask
- pattern
- photomask
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000001681 protective effect Effects 0.000 claims description 21
- 239000000843 powder Substances 0.000 claims description 8
- 239000010408 film Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 230000006378 damage Effects 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000003517 fume Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明はマスク表面を保護するためのマスク保
護膜の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to an improvement in a mask protective film for protecting a mask surface.
(b) 従来技術と問題点
半導体集積回路（IC）などの製造分野におい
て、機能領域、電極コンタクト窓、配線などのパ
ターンの形成は、フオトプロセス工程において、
半導体基板上の感光性樹脂（レジスト）膜に、フ
オトマスクを用いて紫外線などを照射し、該フオ
トマスクのパターンを転写して、該パターンをマ
スクにしてフオトエツチングにより形成される。(b) Prior art and problems In the field of manufacturing semiconductor integrated circuits (ICs), patterns such as functional areas, electrode contact windows, and wiring are formed in the photo process process.
A photosensitive resin (resist) film on a semiconductor substrate is irradiated with ultraviolet rays using a photomask, the pattern of the photomask is transferred, and photoetching is performed using the pattern as a mask.
このフオトプロセス工程において使用するフオ
トマスクは通常ガラス又は石英などの透明体基板
上にたとえばクロムなどの金属薄膜でパターンを
形成させたものが用いられている。 The photomask used in this photoprocessing step is usually one in which a pattern is formed with a thin film of metal such as chromium on a transparent substrate such as glass or quartz.
又フオトマスクは一般に使用する迄の保管中に
透明体基板に形成されたクロームパターンの損傷
や、フオトマスク表面に塵埃などの付着汚染を防
止するため第１図に示すようにパターンが形成さ
れた面にビニール系樹脂膜よりなる表面を保護す
るためのマスク保護膜が被覆され、更にビニール
袋などに収納された状態で使用直前まで保管され
ている。同図において１はガラス又は石英などよ
りなる透明体基板、２は該基板上に形成されたク
ロム薄膜よりなるパターン、３はビニール系樹脂
膜よりなるマスク保護膜を示す。 In addition, to prevent damage to the chrome pattern formed on the transparent substrate and contamination such as dust adhering to the surface of the photomask during storage until it is used, the surface on which the pattern is formed should be coated as shown in Figure 1. The mask is coated with a protective mask film made of a vinyl resin film to protect the surface, and is stored in a plastic bag or the like until just before use. In the figure, 1 is a transparent substrate made of glass or quartz, etc., 2 is a pattern made of a thin chromium film formed on the substrate, and 3 is a mask protective film made of a vinyl resin film.
所でフオトプロセス工程において、上記のよう
に構成されたフオトマスクを使用する際には第２
図の斜視図に示すように基板１上のマスク保護膜
３をはがして清浄なマスク面を表出して使用す
る。尚第２図においては前図と同一符号を付して
いる。 However, in the photo process step, when using the photomask configured as described above, the second
As shown in the perspective view of the figure, the mask protective film 3 on the substrate 1 is peeled off to expose a clean mask surface for use. In FIG. 2, the same reference numerals as in the previous figure are used.
しかしながら此のマスク保護膜３を剥離する際
に、該マスク保護膜３と透明体基板１との間に静
電気による放電によつて、基板１上のクロムパタ
ーン２の一部、特にエツジ部を破壊損傷する現象
があつた。 However, when this mask protective film 3 is peeled off, a part of the chrome pattern 2 on the substrate 1, especially the edge part, may be destroyed due to electrostatic discharge between the mask protective film 3 and the transparent substrate 1. There was a phenomenon that caused damage.
特に最近の半導体素子の高集積化が進む中で、
パターンの寸法は増々微細化され、此のパターン
の一部欠陥は製造歩留の低下をもたらす要因とな
り、又最近のマスク自動検査装置の検査精度向上
によつても上記微細欠陥の検査が確実に行なわれ
フオトマスクの歩留低下となる問題があつた。 In particular, as semiconductor devices become increasingly highly integrated,
The dimensions of patterns are becoming increasingly finer, and some defects in these patterns can cause a decline in manufacturing yield.Also, with recent improvements in the inspection accuracy of automatic mask inspection equipment, the inspection of the above-mentioned minute defects has become more reliable. However, there was a problem that the yield of photomasks decreased.
(c) 発明の目的
本発明の目的はかかる問題点に鑑みなされたも
ので、マスク保護膜の静電気の帯電を防止し、該
保護膜の剥離時に生ずるパターンの静電気破壊を
防止することが可能なマスク保護膜の提供にあ
る。(c) Purpose of the Invention The purpose of the present invention was made in view of the above-mentioned problems, and it is possible to prevent the static electricity charging of the mask protective film and prevent the electrostatic damage to the pattern that occurs when the protective film is peeled off. The goal is to provide a mask protective film.
(d) 発明の構成
その目的を達成するため、本発明のマスク保護
膜中に導電性微粉末を含有してなることを特徴と
する。(d) Structure of the Invention In order to achieve the object, the mask protective film of the present invention is characterized by containing conductive fine powder.
(e) 発明の実施例
以下本発明の実施例について図面を参照して説
明する。第３図に本発明の一実施例を説明するた
めの要部断面図を示す。(e) Embodiments of the invention Examples of the invention will be described below with reference to the drawings. FIG. 3 shows a cross-sectional view of essential parts for explaining one embodiment of the present invention.
同図において、たとえば厚さ約2.3mmのガラス
基板１１上に真空蒸着或はスパツタ蒸着などによ
つて厚さ約1000Åの金属クロム薄膜を蒸着し、該
クロム薄膜をレジスト膜をマスクにして四塩化炭
素（Ccl4）などのガスを用いてプラズマエツチン
グ処理によつて所望のクロムパターン１２を形成
しフオトマスクが完成する。 In the figure, a metallic chromium thin film with a thickness of about 1000 Å is deposited, for example, on a glass substrate 11 with a thickness of about 2.3 mm by vacuum evaporation or sputter evaporation, and then the chromium thin film is coated with tetrachloride using a resist film as a mask. A desired chrome pattern 12 is formed by plasma etching using a gas such as carbon (Ccl 4 ), and the photomask is completed.
次に酢酸ビニール樹脂溶液に約10％の導電性微
粉末、たとえば酸化鉄、或はカーボンの粒度約
0.1μm程度の導電性微粉末を前記酢酸ビニール樹
脂溶液中に混合分散させる。 Next, add approximately 10% of conductive fine powder, such as iron oxide or carbon, to the vinyl acetate resin solution.
A conductive fine powder of about 0.1 μm is mixed and dispersed in the vinyl acetate resin solution.
上記導電性微粉末が混合分散された酢酸ビニー
ル樹脂溶液を前記フオトマスク上に滴下し、ロー
ラーなどによる自動機械によつて該酢酸ビニール
樹脂溶液を前記フオトマスク上に伸ばし、厚さ約
100μm程度の導電性のマスク保護膜１３が被覆さ
れ、排気中のドラフト内において常温乾燥する。 A vinyl acetate resin solution in which the conductive fine powder is mixed and dispersed is dropped onto the photomask, and an automatic machine such as a roller is used to spread the vinyl acetate resin solution onto the photomask to a thickness of approximately
A conductive mask protective film 13 of about 100 μm is coated and dried at room temperature in an exhaust fume hood.
上述したマスク保護膜１３を有するフオトマス
クは、使用時の該保護膜１３をはがす際に、含有
された導電性微粉末によつて該保護膜１３の電気
抵抗が下がつて導電性のため、ガラス基板１１と
保護膜１３との間の静電気の放電によるパターン
１２の破壊損傷を防止することが可能となる。 When the photomask having the mask protective film 13 described above is used, when the protective film 13 is peeled off, the electrical resistance of the protective film 13 is lowered by the conductive fine powder contained therein, making the protective film 13 conductive. It becomes possible to prevent destruction and damage to the pattern 12 due to electrostatic discharge between the substrate 11 and the protective film 13.
従つて欠陥のない正常なパターン形状を有する
フオトマスクの維持及び使用が可能となる。 Therefore, it is possible to maintain and use a photomask having a normal pattern shape without defects.
(f) 発明の効果
以上説明したごとく本発明によれば、導電性微
粉末を含有してなるマスク保護膜によつて、静電
気の帯電を防止することにより、該保護膜の剥離
時におけるパターンの静電破壊を防止することが
可能となり、製品の歩留向上、品質向上に効果が
ある。(f) Effects of the Invention As explained above, according to the present invention, the mask protective film containing conductive fine powder prevents static electricity from forming on the pattern when the protective film is peeled off. It is possible to prevent electrostatic damage, which is effective in improving product yield and quality.
第１図は従来例を説明するための要部断面図、
第２図はマスク保護膜をはがす状態を示す斜視
図、第３図は本発明の一実施例を説明するための
要部断面図である。
図において１１はガラス基板、１２はクロム薄
膜よりなるパターン、１３は導電性微粉末を含有
してなるマスク保護膜を示す。
FIG. 1 is a cross-sectional view of main parts for explaining a conventional example.
FIG. 2 is a perspective view showing a state in which the mask protective film is peeled off, and FIG. 3 is a sectional view of essential parts for explaining one embodiment of the present invention. In the figure, 11 is a glass substrate, 12 is a pattern made of a chromium thin film, and 13 is a mask protective film containing conductive fine powder.
Claims (1)
るマスク保護膜。1. A mask protective film characterized by containing conductive fine powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58194579A JPS6086545A (en) | 1983-10-17 | 1983-10-17 | Mask protective film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58194579A JPS6086545A (en) | 1983-10-17 | 1983-10-17 | Mask protective film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6086545A JPS6086545A (en) | 1985-05-16 |
| JPS633302B2 true JPS633302B2 (en) | 1988-01-22 |
Family
ID=16326886
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58194579A Granted JPS6086545A (en) | 1983-10-17 | 1983-10-17 | Mask protective film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6086545A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0421303U (en) * | 1990-06-14 | 1992-02-24 | ||
| US10388427B2 (en) | 2016-09-20 | 2019-08-20 | Furukawa Electric Co., Ltd. | Flat cable, method for manufacturing the same, and rotatable connector device including the same |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62139547A (en) * | 1985-12-13 | 1987-06-23 | Daicel Chem Ind Ltd | Photosensitive laminate body having anti electrostatic property |
| JPS6446738A (en) * | 1987-08-17 | 1989-02-21 | Fuaintetsuku Kenkyusho Kk | Antistatic photosensitive laminated film |
| US5260150A (en) * | 1987-09-30 | 1993-11-09 | Sharp Kabushiki Kaisha | Photo-mask with light shielding film buried in substrate |
| CA1315023C (en) * | 1987-09-30 | 1993-03-23 | Kenji Ohta | Photo-mask |
| US5079113A (en) * | 1988-09-29 | 1992-01-07 | Sharp Kabushiki Kaisha | Photo-mask |
| JP2558304B2 (en) * | 1987-12-28 | 1996-11-27 | 大日本印刷株式会社 | Glass pattern for plate making |
| US5178976A (en) * | 1990-09-10 | 1993-01-12 | General Electric Company | Technique for preparing a photo-mask for imaging three-dimensional objects |
| GB2301050B (en) * | 1995-05-12 | 1999-06-23 | Kimoto Company Limited | Masking films |
| JP4197378B2 (en) * | 1999-08-18 | 2008-12-17 | 大日本印刷株式会社 | Halftone phase shift photomask, blank for halftone phase shift photomask for the same, and pattern formation method using the same |
-
1983
- 1983-10-17 JP JP58194579A patent/JPS6086545A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0421303U (en) * | 1990-06-14 | 1992-02-24 | ||
| US10388427B2 (en) | 2016-09-20 | 2019-08-20 | Furukawa Electric Co., Ltd. | Flat cable, method for manufacturing the same, and rotatable connector device including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6086545A (en) | 1985-05-16 |
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