JPS6084823A - Device for etching semiconductor wafer - Google Patents
Device for etching semiconductor waferInfo
- Publication number
- JPS6084823A JPS6084823A JP19272783A JP19272783A JPS6084823A JP S6084823 A JPS6084823 A JP S6084823A JP 19272783 A JP19272783 A JP 19272783A JP 19272783 A JP19272783 A JP 19272783A JP S6084823 A JPS6084823 A JP S6084823A
- Authority
- JP
- Japan
- Prior art keywords
- wafers
- wafer
- etching
- tank
- vertical rotation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は、半導体ウェハ(以下ウェハと呼ぶ)の浸漬式
エツチング装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an immersion etching apparatus for semiconductor wafers (hereinafter referred to as wafers).
従来、この種のウェハの浸漬式エツチング装置では、ウ
ェハ20〜25枚を専用のキャリアに収納し、これをエ
ツチング用の薬液槽、水洗槽に順次浸漬することにより
エツチングを行っていた。Conventionally, in this type of wafer immersion etching apparatus, etching was carried out by storing 20 to 25 wafers in a special carrier and sequentially immersing them in an etching chemical bath and a water washing bath.
しかるに近年ウェハの径が大きくなってきており、これ
に伴って上記専用の午ヤリアも大きくなり、それにつれ
て浸漬する槽の大きさ、さらには装置全体が大きくな二
て来ている。そのため工程により種々のエツチング装置
を多数用意すると、膨大な床面積が必要になることとな
った。However, in recent years, the diameter of wafers has become larger, and with this, the size of the wafer dedicated to wafers has also become larger, and as a result, the size of the immersion tank and, furthermore, the size of the entire apparatus have become larger. Therefore, if a large number of various etching apparatuses were prepared depending on the process, a huge amount of floor space would be required.
一方、半導体製造工場では、半導体の歩留りを向上させ
るため、工場内の空気の無塵化、及び温度、湿度のコン
トロール等の空調管理に多大の費用がかけられている。On the other hand, in semiconductor manufacturing factories, in order to improve the yield of semiconductors, a large amount of money is spent on air conditioning management such as making the air inside the factory dust-free and controlling temperature and humidity.
従って床面積の増加は工場運転コストの増大につながる
という欠点があった。Therefore, there was a drawback that an increase in floor space led to an increase in factory operating costs.
又、上記従来方法では専用キャリアを順次工。In addition, in the conventional method described above, dedicated carriers are sequentially machined.
チング槽に浸漬しているため、前のエツチング槽の液が
キャリアに付着して次の槽に入り込み、液の濃度や温度
が変化して安定したエツチングが行えないといった欠点
もあった。Because the carrier is immersed in an etching tank, the solution from the previous etching tank adheres to the carrier and enters the next tank, causing changes in the concentration and temperature of the solution, making it impossible to perform stable etching.
さらに薬液を洗い流す水洗槽においても、ウエ八を洗浄
するのが本来の目的であるにもがかわらず、キャリアも
合わせて洗浄しなければならず、余分な水が必要となる
上に、水洗に時間がががるという欠点があった。Furthermore, even in the washing tank where the chemical solution is washed away, although the original purpose is to wash the wafers, the carrier must also be washed at the same time, which requires extra water and is difficult to wash. The disadvantage was that it took time.
この発明は上記のような従来のものの欠点を除去するた
めになされたもので、ウェハを1枚ずつ順次搬送するウ
ェハ移動装置と、該搬送したウェハを順次浸漬、水洗、
乾燥するエツチング槽、水洗槽、乾燥部を設けることに
より、浸漬する槽を小型化でき、装置)体をコンパクト
に構成できる半導体ウェハのエツチング装置を提供する
ことを目的としている。This invention was made in order to eliminate the drawbacks of the conventional devices as described above, and includes a wafer moving device that sequentially transfers wafers one by one, and a device that sequentially immerses, washes, and washes the transferred wafers.
It is an object of the present invention to provide a semiconductor wafer etching apparatus in which the immersion tank can be downsized by providing an etching tank for drying, a washing tank, and a drying section, and the apparatus body can be constructed compactly.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図及び第2図は本発明の一実施例による半導体ウェ
ハのエツチング装置を示し、図において、20はウェハ
を順次搬送するウェハ移動装置で、該ウェハ移動装置2
0において、5は上下及び挑動旋回を行う上下旋回軸、
6は上下旋回軸5を駆動する駆動部、1は一端が上下旋
回軸5の上端部に一定され上下旋回軸5の旋回中心より
水平に放射状に突出する形で配置された複数個のアーム
、4はアームlの他端に支持され、開閉することにより
ウェハ2の周縁を挾持しウェハ2を水平に保持運搬する
複数のクランプ爪3を備えているクランパである。1 and 2 show a semiconductor wafer etching apparatus according to an embodiment of the present invention. In the figures, 20 is a wafer moving device that sequentially transports wafers, and the wafer moving device 2
0, 5 is a vertical rotation axis for vertical and challenging rotation;
Reference numeral 6 indicates a drive unit for driving the vertical rotation shaft 5; 1 indicates a plurality of arms having one end fixed at the upper end of the vertical rotation shaft 5 and arranged to protrude horizontally and radially from the rotation center of the vertical rotation shaft 5; A clamper 4 is supported by the other end of the arm 1 and includes a plurality of clamp claws 3 that clamp the periphery of the wafer 2 and hold and transport the wafer 2 horizontally by opening and closing.
また7は投入されたウェハ2を受げ取るローデインダス
テージで、本エツチング装置外に別に設けたローダ11
によりウェハ2はローデインダステージ7上に載せられ
る。8はエツチング液を満たした複数のエツチング槽、
9はエツチング後のウェハ2を洗浄する水洗槽、lOは
水洗後のウェハを乾燥させる乾燥部であり、上記構成要
素7〜10は上下旋回軸5の旋回中心に対して同一円周
上に、クランパ4の停止位置下方に配置されている。ま
た12は本エツチング装置外に設けたアンローダで、水
洗、乾燥後のウェハ2を乾燥部10より取り出すための
ものである。Reference numeral 7 denotes a loader stage for receiving the loaded wafer 2, and a loader 11 is installed separately outside the etching apparatus.
Accordingly, the wafer 2 is placed on the loading stage 7. 8 is a plurality of etching tanks filled with etching liquid;
9 is a washing tank for washing the wafer 2 after etching, IO is a drying section for drying the wafer after washing, and the above components 7 to 10 are on the same circumference with respect to the center of rotation of the vertical rotation shaft 5 It is arranged below the stop position of the clamper 4. Reference numeral 12 denotes an unloader provided outside the etching apparatus for taking out the wafer 2 after washing and drying from the drying section 10.
第3図は水洗槽9の断面を示す。ウェハ2は、水洗槽9
底部中心より内側に突出して設けられ、該底部外側に設
けたスピンモータ13によって回転駆動されるチャック
14に保持されて回転されると同時に、水噴出ノズル1
5より噴出される洗浄水により、該ウェハ2の表裏面が
洗浄される。FIG. 3 shows a cross section of the washing tank 9. The wafer 2 is placed in the washing tank 9.
At the same time, the water jet nozzle 1 is held and rotated by a chuck 14 which is provided to protrude inward from the center of the bottom and is rotationally driven by a spin motor 13 provided outside the bottom.
The front and back surfaces of the wafer 2 are cleaned by the cleaning water spouted from the wafer 5.
なお16は水洗槽9の底部に設けられた洗浄水の排出口
である。Note that 16 is a washing water outlet provided at the bottom of the washing tank 9.
第4図は乾燥部10の断面を示す。第3図の水洗槽9と
同様ウェハ2はチャック18にて保持され、スピンモー
タ17にて回転駆動され、遠心力によりウェハ2に付着
した水分は脱水乾燥される。FIG. 4 shows a cross section of the drying section 10. Similar to the washing tank 9 in FIG. 3, the wafer 2 is held by a chuck 18 and rotated by a spin motor 17, so that the water adhering to the wafer 2 is removed and dried by centrifugal force.
なお19は乾燥部10の底部に設けられた排水口である
。Note that 19 is a drain port provided at the bottom of the drying section 10.
図
第ト診、第6図は第2図のA−A’線断面を示す。第5
図はクランパ4が上昇しクランプ爪3が開いた状態を、
第6図はウェハ2をエツチング槽8内で浸漬させた状態
をそれぞれ示す。Fig. 6 shows a cross section taken along the line AA' in Fig. 2. Fifth
The figure shows the state where the clamper 4 is raised and the clamp claw 3 is open.
FIG. 6 shows the state in which the wafer 2 is immersed in the etching bath 8. As shown in FIG.
次に第2図、第5図、第6図を用いて動作について説明
する。まず第2図において、エツチング装置外部に設置
したローダ11によってウェハ2がローデインダステー
ジ7上に載置されると、第5図の様にクランプ爪3が開
いた状態で上下旋回軸5が下降し、下降下死点で1.ク
ランプ爪3が閉じ、ウェハ2を水平に挾持する。挾持さ
れたウェハ2は上下旋回軸5の上昇により、ローデイン
ダステージ7から持ち上げられ、上下旋回軸5の矢印B
に示す方向に隣りの処理槽8上まで旋回移動される。こ
の後再び上下旋回軸5が下降し、ウェハ2は処理槽8内
に浸漬される。この状態でクランプ爪3が開き、上下旋
回軸5は上昇した後矢印Bと逆方向に旋回し、元の位置
まで戻る。この一連のサイクル動作でローデインダステ
ージ7上に置かれたウェハ2が、隣接した処理槽8内に
移動し、順次エツチング液中に浸漬される。Next, the operation will be explained using FIG. 2, FIG. 5, and FIG. 6. First, in FIG. 2, when the wafer 2 is placed on the loader stage 7 by the loader 11 installed outside the etching apparatus, the vertical pivot shaft 5 is lowered with the clamp claw 3 open as shown in FIG. 1 at bottom dead center. The clamp claws 3 close and clamp the wafer 2 horizontally. The clamped wafer 2 is lifted from the loader stage 7 by the rise of the vertical rotation axis 5, and is moved by the arrow B of the vertical rotation axis 5.
It is rotated and moved above the adjacent processing tank 8 in the direction shown in . Thereafter, the vertical rotation shaft 5 is lowered again, and the wafer 2 is immersed in the processing bath 8. In this state, the clamp claw 3 opens, and the vertical pivot shaft 5 rises and then pivots in the direction opposite to arrow B and returns to its original position. Through this series of cyclic operations, the wafer 2 placed on the loading stage 7 is moved into the adjacent processing tank 8 and sequentially immersed in the etching solution.
一方、上下旋回軸5には放射状にアーム1及びクランプ
爪3が複数個取り付けられており、同時に上下、旋回す
る構造になっているため、複数のウェハ2が1サイクル
の上下旋回軸5の動作で同時に夫々隣接するローゲイン
ゲスチーシフ、エソチング槽8.水洗槽9.乾燥部10
間で移動する。On the other hand, a plurality of arms 1 and clamp claws 3 are attached radially to the vertical rotation shaft 5, and the structure is such that they can rotate up and down at the same time, so that a plurality of wafers 2 move in one cycle of the vertical rotation shaft 5. 8. At the same time, the adjacent low gain gas stack and esoching tanks 8. Washing tank9. Drying section 10
move between.
従って、ローデインダステージ7に投入されたウェハは
上記サイクル動作を繰り返すことにより、エツチング槽
への浸漬、水洗、乾燥の順に処理が行なわれる。Therefore, by repeating the above-mentioned cycle operation, the wafer loaded into the loading stage 7 is subjected to processing in the order of immersion in the etching tank, washing with water, and drying.
この様に、本実施例ではウェハを1枚重位でハンドリン
グするため、エツチング槽の形状が小さくなり、使用す
るエツチング液の使用量が少なく、交換に際しても排液
、給液時間が短い。また専用のウェハ収納容器を使用し
ないため、エツチング槽間での薬液の混入が少なく、水
洗においても、収納容器を洗浄しなくても良いため、使
用水量が少なくなる等の利点がある。また処理槽の形状
が小さいため、装置全体が小さくなり、床の専有面積が
小となり、ランニングコストが小さくなる効果がある。In this way, in this embodiment, since wafers are handled one by one, the shape of the etching tank is small, the amount of etching solution used is small, and the time required for draining and supplying the etching solution is short even when replacing the wafer. Further, since a dedicated wafer storage container is not used, there is less chance of mixing of chemicals between etching baths, and since there is no need to wash the storage container with water, there are advantages such as a reduction in the amount of water used. Furthermore, since the shape of the processing tank is small, the entire device is small, and the floor area occupied is small, which has the effect of reducing running costs.
以上のように、この発明によれば、ウェハを1枚ずつ順
次搬送するウェハ移動装置と、該搬送したウェハを順次
浸漬、水洗、乾燥するエツチング槽、水洗槽、乾燥部を
設けるようにしたので、浸漬する槽を小型化でき、装置
全体をコンパクトに構成できる効果がある。As described above, according to the present invention, there is provided a wafer moving device that sequentially transports wafers one by one, and an etching tank, a rinsing tank, and a drying section that sequentially immerse, wash, and dry the transported wafers. This has the effect that the immersion tank can be downsized and the entire device can be configured compactly.
第1図は本発明の一実施例による半導体ウェハのエツチ
ング装置の斜視図、第2図は第1図の装置の平面図、第
3図は第1図の水洗槽の断面図、第4図は第1図の乾燥
部の断面図、第5図、第6図は第1図の装置のウェハ移
動動作の説明図である。 。
図中、20はウェハ移動装置、1はアーム、2はウェハ
、3はクランプ爪、5は上下旋回軸、8はエツチング槽
、9は水洗槽、10は乾燥部である。
なお図中同一符号は同−又は相当部分を示す。
代理人 大岩増雄
第1図
第2図1 is a perspective view of a semiconductor wafer etching apparatus according to an embodiment of the present invention, FIG. 2 is a plan view of the apparatus shown in FIG. 1, FIG. 3 is a sectional view of the washing tank shown in FIG. 1, and FIG. 1 is a sectional view of the drying section of FIG. 1, and FIGS. 5 and 6 are explanatory views of the wafer moving operation of the apparatus of FIG. 1. . In the figure, 20 is a wafer moving device, 1 is an arm, 2 is a wafer, 3 is a clamp claw, 5 is a vertical rotation axis, 8 is an etching tank, 9 is a washing tank, and 10 is a drying section. Note that the same reference numerals in the figures indicate the same or equivalent parts. Agent Masuo Oiwa Figure 1 Figure 2
Claims (1)
上下旋回軸に固定され該軸の旋回中心に対し放射状に配
置された複数のアーム、及び該アームの他端に支持され
ウェハを挾持するクランプ爪を備えたウェハ移動装置と
、上記クランプ爪の下方において上記旋回軸を中心とす
る円上に上記複数のアームの旋回停止位置の各々に対応
して配置された1IvA又は複数個のエツチング槽、水
洗槽、及び乾燥部とを備えたことを特徴とする半導体ウ
ェハのエツチング装置。(1) A vertical pivot shaft that moves up and down and rotates, a plurality of arms with one end fixed to the vertical pivot shaft and arranged radially with respect to the pivot center of the shaft, and the arms supported by the other end to hold the wafer. 1IvA or a plurality of etching devices arranged below the clamp claw on a circle centered on the rotation axis, corresponding to each of the rotation stop positions of the plurality of arms; A semiconductor wafer etching apparatus characterized by comprising a tank, a washing tank, and a drying section.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19272783A JPS6084823A (en) | 1983-10-15 | 1983-10-15 | Device for etching semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19272783A JPS6084823A (en) | 1983-10-15 | 1983-10-15 | Device for etching semiconductor wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6084823A true JPS6084823A (en) | 1985-05-14 |
JPH0155573B2 JPH0155573B2 (en) | 1989-11-27 |
Family
ID=16296057
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19272783A Granted JPS6084823A (en) | 1983-10-15 | 1983-10-15 | Device for etching semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6084823A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62147734A (en) * | 1985-12-23 | 1987-07-01 | Toyo Setsubi Kogyo Kk | Etching apparatus for wafer |
JPS6419724A (en) * | 1987-07-15 | 1989-01-23 | Hitachi Ltd | Wet treatment equipment |
JPS6419726A (en) * | 1987-07-15 | 1989-01-23 | Hitachi Ltd | Wet treater |
EP0841102A1 (en) * | 1996-10-09 | 1998-05-13 | Ebara Corporation | Turning-over machine and polishing apparatus |
CN114554713A (en) * | 2022-01-25 | 2022-05-27 | 富璟信息数字科技(深圳)有限公司 | Etching equipment for integrated circuit production |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107480A (en) * | 1973-02-15 | 1974-10-12 | ||
JPS5752138A (en) * | 1980-09-16 | 1982-03-27 | Mitsubishi Electric Corp | Etching device for semiconductor substrate |
-
1983
- 1983-10-15 JP JP19272783A patent/JPS6084823A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49107480A (en) * | 1973-02-15 | 1974-10-12 | ||
JPS5752138A (en) * | 1980-09-16 | 1982-03-27 | Mitsubishi Electric Corp | Etching device for semiconductor substrate |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62147734A (en) * | 1985-12-23 | 1987-07-01 | Toyo Setsubi Kogyo Kk | Etching apparatus for wafer |
JPS6419724A (en) * | 1987-07-15 | 1989-01-23 | Hitachi Ltd | Wet treatment equipment |
JPS6419726A (en) * | 1987-07-15 | 1989-01-23 | Hitachi Ltd | Wet treater |
EP0841102A1 (en) * | 1996-10-09 | 1998-05-13 | Ebara Corporation | Turning-over machine and polishing apparatus |
US5944941A (en) * | 1996-10-09 | 1999-08-31 | Ebara Corporation | Turning-over machine and polishing apparatus |
CN114554713A (en) * | 2022-01-25 | 2022-05-27 | 富璟信息数字科技(深圳)有限公司 | Etching equipment for integrated circuit production |
Also Published As
Publication number | Publication date |
---|---|
JPH0155573B2 (en) | 1989-11-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5672212A (en) | Rotational megasonic cleaner/etcher for wafers | |
US6395101B1 (en) | Single semiconductor wafer processor | |
JP2023155279A (en) | Substrate processing system and substrate processing method | |
US6660104B2 (en) | Dual cassette centrifugal processor | |
JP2003045839A (en) | Substrate processing apparatus and method | |
US20090038641A1 (en) | Substrate Cleaning Apparatus, Substrate Cleaning Method, Substrate Processing System, and Storage Medium | |
JP2002353181A (en) | Sheet substrate cleaning method and sheet substrate cleaning device | |
JP2023155280A (en) | Substrate processing system and substrate processing method | |
KR20090126181A (en) | Liquid treatment apparatus, liquid treatment method and storage medium | |
KR20190112639A (en) | Substrate processing method and substrate processing apparatus | |
US6225235B1 (en) | Method and device for cleaning and etching individual wafers using wet chemistry | |
US6668844B2 (en) | Systems and methods for processing workpieces | |
JPS6084823A (en) | Device for etching semiconductor wafer | |
KR101977752B1 (en) | Apparatus and Method for treating a substrate | |
KR100912702B1 (en) | Apparatus and method for treating substrate | |
CN206619584U (en) | A kind of wafer processor | |
WO2002076640A1 (en) | Vertical process reactor | |
JP3697063B2 (en) | Cleaning system | |
US4458704A (en) | Apparatus for processing semiconductor wafers | |
JPH10163158A (en) | Cleaning apparatus for sheetlike body | |
JP3003332B2 (en) | Semiconductor substrate immersion processing equipment | |
KR0128226Y1 (en) | Wafer-cleaning device | |
JPH10340875A (en) | Treatment equipment and treatment method | |
JPS60106135A (en) | Drying device | |
KR100871823B1 (en) | Apparatus and method for treating substrate |