JPH0155573B2 - - Google Patents

Info

Publication number
JPH0155573B2
JPH0155573B2 JP58192727A JP19272783A JPH0155573B2 JP H0155573 B2 JPH0155573 B2 JP H0155573B2 JP 58192727 A JP58192727 A JP 58192727A JP 19272783 A JP19272783 A JP 19272783A JP H0155573 B2 JPH0155573 B2 JP H0155573B2
Authority
JP
Japan
Prior art keywords
wafer
etching
tank
washing
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58192727A
Other languages
Japanese (ja)
Other versions
JPS6084823A (en
Inventor
Masatoshi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP19272783A priority Critical patent/JPS6084823A/en
Publication of JPS6084823A publication Critical patent/JPS6084823A/en
Publication of JPH0155573B2 publication Critical patent/JPH0155573B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67023Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体ウエハ(以下ウエハと呼ぶ)
の浸漬式エツチング装置に関するものである。
[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a semiconductor wafer (hereinafter referred to as a wafer).
This invention relates to an immersion type etching apparatus.

〔従来技術〕[Prior art]

従来、この種のウエハの浸漬式エツチング装置
では、ウエハ20〜25枚を専用のキヤリアに収納
し、これをエツチング用の薬液槽、水洗槽に順次
浸漬することによりエツチングを行つていた。
Conventionally, in this type of wafer immersion etching apparatus, etching is performed by storing 20 to 25 wafers in a dedicated carrier and sequentially immersing them in an etching chemical bath and a water washing bath.

しかるに近年ウエハの径が大きくなつてきてお
り、これに伴つて上記専用のキヤリアも大きくな
り、それにつれて浸漬する槽の大きさ、さらには
装置全体が大きくなつて来ている。そのため工程
により種々のエツチング装置を多数用意すると、
膨大な床面積が必要になることとなつた。
However, in recent years, the diameter of wafers has become larger, and with this, the dedicated carriers described above have also become larger, and accordingly, the size of the immersion tank and, furthermore, the entire apparatus have become larger. Therefore, if a large number of different etching devices are prepared depending on the process,
A huge amount of floor space was required.

一方、半導体製造工場では、半導体の歩留りを
向上させるため、工場内の空気の無塵化、及び温
度、湿度のコントロール等の空調管理に多大の費
用がかけられている。従つて床面積の増加は工場
運転コストの増大につながるという欠点があつ
た。
On the other hand, in semiconductor manufacturing factories, in order to improve the yield of semiconductors, a large amount of money is spent on air conditioning management such as making the air inside the factory dust-free and controlling temperature and humidity. Therefore, an increase in floor space has the disadvantage of increasing factory operating costs.

又、上記従来方法では専用キヤリアを順次エツ
チング槽に浸漬しているため、前のエツチング槽
の液がキヤリアに付着して次の槽に入り込み、液
の濃度や温度が変化して安定したエツチングが行
えないといつた欠点もあつた。
In addition, in the conventional method described above, dedicated carriers are immersed in etching tanks one after another, so the liquid from the previous etching tank adheres to the carrier and enters the next tank, causing changes in the concentration and temperature of the liquid, resulting in stable etching. There were some drawbacks that made it impossible to do so.

さらに薬液を洗い流す水洗槽においても、ウエ
ハを洗浄するのが本来の目的であるにもかかわら
ず、キヤリアも合わせて洗浄しなければならず、
余分な水が必要となる上に、水洗に時間がかかる
という欠点があつた。
Furthermore, even though the original purpose of the washing tank used to wash away the chemical solution is to wash the wafer, the carrier must also be washed at the same time.
The drawback was that it required extra water and took a long time to wash.

〔発明の概要〕[Summary of the invention]

この発明は上記のような従来のものの欠点を除
去するためになされたもので、ウエハを1枚ずつ
順次搬送するウエハ移動装置と、該搬送したウエ
ハを順次浸漬、水洗、乾燥するエツチング液種が
相異なるエツチング槽、水洗槽、乾燥部を設ける
ことにより、浸漬する槽を小型化でき、装置全体
をコンパクトに構成できる半導体ウエハのエツチ
ング装置を提供することを目的としている。
This invention was made in order to eliminate the drawbacks of the conventional devices as described above, and includes a wafer moving device that sequentially transfers wafers one by one, and an etching solution that sequentially immerses, washes, and dries the transferred wafers. It is an object of the present invention to provide a semiconductor wafer etching apparatus in which the immersion bath can be made smaller by providing different etching baths, rinsing baths, and drying sections, and the entire apparatus can be constructed compactly.

〔発明の実施例〕[Embodiments of the invention]

以下、この発明の一実施例を図について説明す
る。
An embodiment of the present invention will be described below with reference to the drawings.

第1図及び第2図は本発明の一実施例による半
導体ウエハのエツチング装置を示し、図におい
て、20はウエハを順次搬送するウエハ移動装置
で、該ウエハ移動装置20において、5は上下及
び揺動旋回を行う上下旋回軸、6は上下旋回軸5
を駆動する駆動部、1は一端が旋動部5の上端部
に固定され上下旋回軸5の旋回中心より水平に放
射状に突出する形で配置された複数個のアーム、
4はアーム1の他端に支持され、開閉することに
よりウエハ2の周縁を挾持しウエハ2を水平に保
持運搬する複数のクランプ爪3を備えているクラ
ンパである。
FIGS. 1 and 2 show a semiconductor wafer etching apparatus according to an embodiment of the present invention. In the figures, 20 is a wafer moving device that sequentially transports wafers, and in the wafer moving device 20, 5 is an up/down and a swinging device. 6 is the vertical rotation axis 5 which performs movement and rotation.
A driving unit 1 includes a plurality of arms having one end fixed to the upper end of the rotating unit 5 and arranged to protrude horizontally and radially from the center of rotation of the vertical rotating shaft 5.
A clamper 4 is supported by the other end of the arm 1 and includes a plurality of clamp claws 3 that clamp the periphery of the wafer 2 and hold and transport the wafer 2 horizontally by opening and closing.

また7は投入されたウエハ2を受け取るローデ
イングステージで、本エツチング装置外に別に設
けたローダ11によりウエハ2はローデイングス
テージ7上に載せられる。8は相異なる液種のエ
ツチング液を満たした複数のエツチング槽、9は
エツチング後のウエハ2を洗浄する水洗槽、10
は水洗後のウエハを乾燥させる乾燥部であり、上
記構成要素7〜10は上下旋回軸5の旋回中心に
対して同一円周上に、クランパ4の停止位置下方
に配置されている。また12は本エツチング装置
外に設けたアンローダで、水洗、乾燥後のウエハ
2を乾燥部10より取り出すためのものである。
Reference numeral 7 denotes a loading stage for receiving the loaded wafer 2, and the wafer 2 is placed on the loading stage 7 by a loader 11 provided separately outside the etching apparatus. 8 is a plurality of etching tanks filled with different types of etching solutions; 9 is a washing tank for washing the wafer 2 after etching; 10
is a drying section for drying wafers after washing with water, and the above-mentioned components 7 to 10 are arranged on the same circumference with respect to the center of rotation of the vertical rotation shaft 5 and below the stop position of the clamper 4. Reference numeral 12 denotes an unloader provided outside the etching apparatus for taking out the wafer 2 after washing and drying from the drying section 10.

第3図は水洗槽9の断面を示す。ウエハ2は、
水洗槽9底部中心より内側に突出して設けられ、
該底部外側に設けたスピンモータ13によつて回
転駆動されるチヤツク14に保持されて回転され
ると同時に、水噴出ノズル15より噴出される洗
浄水により、該ウエハ2の表裏面が洗浄される。
なお16は水洗槽9の底部に設けられた洗浄水の
排出口である。
FIG. 3 shows a cross section of the washing tank 9. Wafer 2 is
Provided to protrude inward from the center of the bottom of the washing tank 9,
The wafer 2 is held and rotated by a chuck 14 that is rotationally driven by a spin motor 13 provided outside the bottom, and at the same time, the front and back surfaces of the wafer 2 are cleaned by cleaning water jetted from a water jet nozzle 15. .
Note that 16 is a washing water outlet provided at the bottom of the washing tank 9.

第4図は乾燥部10の断面を示す。第3図の水
洗槽9と同様ウエハ2はチヤツク18にて保持さ
れ、スピンモータ17にて回転駆動され、遠心力
によりウエハ2に付着した水分は脱水乾燥され
る。なお19は乾燥部10の底部に設けられた排
水口である。
FIG. 4 shows a cross section of the drying section 10. Similar to the washing tank 9 in FIG. 3, the wafer 2 is held by a chuck 18 and rotated by a spin motor 17, so that the water adhering to the wafer 2 is removed and dried by centrifugal force. Note that 19 is a drain port provided at the bottom of the drying section 10.

第5図、第6図は第2図のA−A′線断面を示
す。第5図はクランパ4が上昇したクランプ爪3
が開いた状態を、第6図はウエハ2をエツチング
槽8内で浸漬させた状態をそれぞれ示す。
5 and 6 show cross sections taken along the line A-A' in FIG. 2. Figure 5 shows the clamp claw 3 with the clamper 4 raised.
6 shows the state in which the wafer 2 is immersed in the etching bath 8. FIG.

次に第2図、第5図、第6図を用いて動作につ
いて説明する。まず第2図において、エツチング
装置外部に設置したローダ11によつてウエハ2
がローデイングステージ7上に載置されると、第
5図の様にクランプ爪3が開いた状態で上下旋回
軸5が下降し、下降下死点で、クランプ爪3が閉
じ、ウエハ2を水平に挾持する。挾持されたウエ
ハ2は上下旋回軸5の上昇により、ローデイング
ステージ7から持ち上げられ、上下旋回軸5の矢
印Bに示す方向に隣りの処理槽8上まで旋回移動
される。この後再び上下旋回軸5が下降し、ウエ
ハ2は処理槽8内に浸漬される。この状態でクラ
ンプ爪3が開き、上下旋回軸5は上昇した後矢印
Bと逆方向に旋回し、元の位置まで戻る。この一
連のサイクル動作でローデイングステージ7上に
置かれたウエハ2が、隣接した処理槽8内に移動
し、順次エツチング液中に浸漬される。
Next, the operation will be explained using FIG. 2, FIG. 5, and FIG. 6. First, in FIG. 2, a wafer 2 is loaded by a loader 11 installed outside the etching apparatus.
When the wafer 2 is placed on the loading stage 7, the vertical rotation shaft 5 descends with the clamp claw 3 open as shown in FIG. Hold horizontally. The clamped wafer 2 is lifted from the loading stage 7 by the upward movement of the vertical rotation axis 5, and is rotated in the direction shown by the arrow B of the vertical rotation axis 5 onto the adjacent processing tank 8. Thereafter, the vertical rotation shaft 5 descends again, and the wafer 2 is immersed in the processing bath 8. In this state, the clamp claw 3 opens, and the vertical pivot shaft 5 rises and then pivots in the direction opposite to arrow B and returns to its original position. Through this series of cycle operations, the wafer 2 placed on the loading stage 7 is moved into the adjacent processing bath 8 and sequentially immersed in the etching solution.

一方、上下旋回軸5には放射状にアーム1及び
クランプ爪3が複数個取り付けられており、同時
に上下、旋回する構造になつているため、複数の
ウエハ2が1サイクルの上下旋回軸5の動作で同
時に夫々隣接するローデイングステージ7、エツ
チング槽8、水洗槽9、乾燥部10間で移動す
る。
On the other hand, a plurality of arms 1 and clamp claws 3 are attached radially to the vertical rotation shaft 5, and the structure is such that they can rotate up and down at the same time, so that a plurality of wafers 2 move in one cycle of the vertical rotation shaft 5. At the same time, it moves between the adjacent loading stage 7, etching tank 8, washing tank 9, and drying section 10, respectively.

従つて、ローデイングステージ7に投入された
ウエハは上記サイクル動作を繰り返すことによ
り、エツチング槽への浸漬、水洗、乾燥の順に処
理が行なわれる。
Therefore, the wafer loaded into the loading stage 7 is processed in the order of immersion in the etching tank, washing with water, and drying by repeating the above-mentioned cycle operation.

この様に、本実施例ではウエハを1枚単位でハ
ンドリングするため、エツチング槽の形状が小さ
くなり、使用するエツチング液の使用量が少な
く、交換に際しても排液、給液時間が短い。また
専用のウエハ収納容器を使用しないため、エツチ
ング槽間での薬液の混入が少なく、水洗において
も、収納容器を洗浄しなくても良いため、使用水
量が少なくなる等の利点がある。また処理槽の形
状が小さいため、装置全体が小さくなり、床の専
有面積が小となり、ランニングコストが小さくな
る効果がある。
In this way, in this embodiment, since wafers are handled one by one, the shape of the etching bath is small, the amount of etching solution used is small, and the time required for draining and supplying the etching solution is short even when replacing the wafer. Further, since a dedicated wafer storage container is not used, there is less chance of mixing of chemicals between etching baths, and since there is no need to wash the storage container with water, there are advantages such as a reduction in the amount of water used. Furthermore, since the shape of the processing tank is small, the entire device is small, and the floor area occupied is small, which has the effect of reducing running costs.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によれば、ウエハを1
枚ずつ順次搬送するウエハ移動装置と、該搬送し
たウエハを順次浸漬、水洗、乾燥するエツチング
液種が相異なるエツチング槽、水洗槽、乾燥部を
設けるようにしたので、浸漬する槽を小型化で
き、装置全体をコンパクトに構成できる効果があ
る。
As described above, according to the present invention, one wafer can be
A wafer transfer device that sequentially transfers wafers one by one, and an etching tank, a washing tank, and a drying section that use different types of etching solutions to sequentially immerse, wash, and dry the transferred wafers are provided, so the dipping tank can be made smaller. This has the effect that the entire device can be configured compactly.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例による半導体ウエハ
のエツチング装置の斜視図、第2図は第1図の装
置の平面図、第3図は第1図の水洗槽の断面図、
第4図は第1図の乾燥部の断面図、第5図、第6
図は第1図の装置のウエハ移動動作の説明図であ
る。 図中、20はウエハ移動装置、1はアーム、2
はウエハ、3はクランプ爪、5は上下旋回軸、8
はエツチング槽、9は水洗槽、10は乾燥部であ
る。なお図中同一符号は同一又は相当部分を示
す。
1 is a perspective view of a semiconductor wafer etching apparatus according to an embodiment of the present invention, FIG. 2 is a plan view of the apparatus of FIG. 1, and FIG. 3 is a sectional view of the washing tank of FIG. 1.
Figure 4 is a sectional view of the drying section in Figure 1, Figures 5 and 6.
The figure is an explanatory diagram of the wafer moving operation of the apparatus of FIG. 1. In the figure, 20 is a wafer moving device, 1 is an arm, 2
is the wafer, 3 is the clamp claw, 5 is the vertical rotation axis, 8
9 is an etching tank, 9 is a washing tank, and 10 is a drying section. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

【特許請求の範囲】 1 上下動及び回転を行う上下旋回軸、一端が上
記上下旋回軸に固定され該軸の旋回中心に対し放
射状に配置された複数のアーム、及び該アームの
他端に支持されウエハを挟持するクランプ爪を備
えたウエハ移動装置と、 上記クランプ爪の下方において上記旋回軸を中
心とする円上に上記複数のアームの旋回停止位置
の各々に対応して配置された、相異なる液種のエ
ツチング槽、水洗槽、及び乾燥部とを備えたこと
を特徴とする半導体ウエハのエツチング装置。
[Scope of Claims] 1. A vertical pivot shaft that moves vertically and rotates, a plurality of arms having one end fixed to the vertical pivot shaft and arranged radially with respect to the pivot center of the shaft, and supported at the other end of the arm. a wafer moving device equipped with clamp claws for clamping a wafer; A semiconductor wafer etching apparatus comprising an etching tank of different liquid types, a rinsing tank, and a drying section.
JP19272783A 1983-10-15 1983-10-15 Device for etching semiconductor wafer Granted JPS6084823A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19272783A JPS6084823A (en) 1983-10-15 1983-10-15 Device for etching semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19272783A JPS6084823A (en) 1983-10-15 1983-10-15 Device for etching semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS6084823A JPS6084823A (en) 1985-05-14
JPH0155573B2 true JPH0155573B2 (en) 1989-11-27

Family

ID=16296057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19272783A Granted JPS6084823A (en) 1983-10-15 1983-10-15 Device for etching semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS6084823A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0736400B2 (en) * 1985-12-23 1995-04-19 東洋設備工業株式会社 Wafer etching equipment
JP2601827B2 (en) * 1987-07-15 1997-04-16 株式会社日立製作所 Wet processing equipment
JP2601829B2 (en) * 1987-07-15 1997-04-16 株式会社日立製作所 Wet processing equipment
EP0841102B1 (en) * 1996-10-09 2003-01-22 Ebara Corporation Turning-over machine and polishing apparatus
CN114554713B (en) * 2022-01-25 2023-03-24 富璟信息数字科技(深圳)有限公司 Etching equipment for integrated circuit production

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49107480A (en) * 1973-02-15 1974-10-12
JPS5752138A (en) * 1980-09-16 1982-03-27 Mitsubishi Electric Corp Etching device for semiconductor substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49107480A (en) * 1973-02-15 1974-10-12
JPS5752138A (en) * 1980-09-16 1982-03-27 Mitsubishi Electric Corp Etching device for semiconductor substrate

Also Published As

Publication number Publication date
JPS6084823A (en) 1985-05-14

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