JPS6083333A - Drying method - Google Patents
Drying methodInfo
- Publication number
- JPS6083333A JPS6083333A JP19162283A JP19162283A JPS6083333A JP S6083333 A JPS6083333 A JP S6083333A JP 19162283 A JP19162283 A JP 19162283A JP 19162283 A JP19162283 A JP 19162283A JP S6083333 A JPS6083333 A JP S6083333A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- spinner
- drying
- fine particles
- infrared ray
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
(al 発明の技術分野
本発明は水洗洗浄後に特に無塵な表面を得る乾燥方法に
関する。DETAILED DESCRIPTION OF THE INVENTION Technical Field of the Invention The present invention relates to a drying method which provides a particularly dust-free surface after washing with water.
(b) 技術の背景
現在半導体部品や回路部品は小形で大容量なものが要求
されており、薄膜技術と写真蝕刻技術(ホトリソグラフ
ィ)とを用いて微細パターンが作られることが多い。(b) Background of the technology Currently, semiconductor components and circuit components are required to be small and large in capacity, and fine patterns are often created using thin film technology and photolithography.
こ\で金縞、抵抗体、絶縁物などの薄膜は真空蒸漸法、
スパッタ蒸着法、イオンビーム蒸箔法など各種の薄膜形
成法で作られ為が、その場合の薄膜の厚さ・は数百〜数
千〔入〕のオーダであり、一方空中或は水中には〔μ〕
オーダの微粒子が数多(浮遊しているが、これが薄膜形
成基板の上に付着していると良品の歩留り向上は望めな
い。本発明は水洗洗浄後に清浄な表面を得る乾燥方法V
C関するものである。In this case, thin films such as gold stripes, resistors, and insulators are produced using the vacuum evaporation method.
Thin films are made using various thin film forming methods such as sputter deposition and ion beam vapor deposition, but the thickness of the thin film in those cases is on the order of several hundred to several thousand [in]. [μ]
There are many small particles (floating) on the order of 100 degrees, but if they adhere to the thin film forming substrate, it is impossible to improve the yield of good products.The present invention is a drying method that obtains a clean surface after washing with water.
It is related to C.
((1)・ 従来技術と問題点
半轡体素子、磁気バブルメモリ素子2弾性表血波フィル
タなどはそれぞれ半導体結晶基板、磁性結晶基板、銹電
体結晶基板などの上に微細バター使用しこれに薄膜形成
技術とホトエツチング技術〉グ液の完全除去が行われて
いるが、薄膜形成のためには完全に無塵で清浄な水を用
いて洗沖し微粒子が乾燥面に付着していないことが必要
で微粒子の付着が歩留シ低下の原因となることがある。((1). Conventional technology and problems Semiconductor elements, magnetic bubble memory elements, 2 elastic blood wave filters, etc. are made by using fine butter on semiconductor crystal substrates, magnetic crystal substrates, electric crystal substrates, etc., respectively. Thin film formation technology and photoetching technology> Complete removal of the drying solution is carried out, but in order to form a thin film, cleaning must be done using completely dust-free and clean water so that no particulates adhere to the dry surface. is necessary, and adhesion of fine particles may cause a decrease in yield.
以下ホトマスク用基板を例として説明する。ホトマスク
は透明石英或はガラスからなる厚さ約25〔朋〕の基板
上にクローム(Cr)金属を約1000 (A)の厚さ
に形成し、これに写7!4蝕刻技術を用いてパターン形
成を行ったもので上記の半導体結晶基板や誘fJt体結
晶基板上に被覆されたホトレジスト膜に投影露光或は密
着露光1−る際に使用する原板である。それ故高いパタ
ーン精度が必要でまた傷や汚染などが存在してはならな
い。A photomask substrate will be explained below as an example. A photomask is made by forming chromium (Cr) metal to a thickness of about 1000 (A) on a substrate made of transparent quartz or glass and having a thickness of about 25 [home], and then patterning it using Photo7!4 etching technology. This is an original plate used when performing projection exposure or contact exposure on the photoresist film coated on the above-mentioned semiconductor crystal substrate or induced fJt crystal substrate. Therefore, high pattern accuracy is required and there must be no scratches or contamination.
また良品であっても使用中に傷つき易いので比較的使用
寿命は短く新品と交換される。Furthermore, even if the product is in good condition, it is easily damaged during use, so its service life is relatively short and it is replaced with a new one.
そこでホトマスク形成中或は使用中に不良となグ)して
表面WLt数〔μ慴〕除きホトマスクとして再生使用す
るのが通例である。Therefore, it is customary to remove the surface WLt number (μ) after the photomask becomes defective during formation or use and reuse it as a photomask.
か\る基板は超音波洗浄をり敵底して行い、その後乾燥
して清浄な基板面を得るがこの場合洗浄水中に含まれて
いる微粒子の存在が問題となる。Such substrates are subjected to ultrasonic cleaning and then dried to obtain a clean substrate surface, but in this case the presence of fine particles contained in the cleaning water poses a problem.
すなわち洗浄の最終工程はフィルタを通過後イオン交換
樹脂を用いて精製した純水を用いて行われているため陰
イオン或は陽イオンのような無機イオンは殆んど除かれ
ているが、検査すると平均孔径が0.2〔μm〕のマイ
クロスリーブにか\る微粒子は1 (CC)当り20〜
100個も存在している0この内分けはバクテリヤなど
の微生物、微少な塵埃イオン交換樹脂の微粒子などから
なっている。In other words, the final step of cleaning is performed using pure water that has been purified using an ion exchange resin after passing through a filter, so most inorganic ions such as anions and cations are removed. Then, the number of fine particles in a microsleeve with an average pore diameter of 0.2 [μm] is 20 to 1 (CC).
This subdivision, of which there are as many as 100, consists of microorganisms such as bacteria, minute dust, and fine particles of ion exchange resin.
そしてこれら微粒子が乾燥の際に基板面に付着している
と蒸着するCrの膜厚よpも微粒子の方が太きいため不
良の原因となることが多い。If these fine particles adhere to the substrate surface during drying, the fine particles are thicker than the thickness of the deposited Cr film, which often causes defects.
また純水はこれが精製された状態では微粒子の数は少い
が殺菌剤がイオン交換の過程で除去されているため菌類
などの微生物が繁殖し生長し易く、そのため洗浄水とし
て使用する純水中には粒径が0.1〔μfn〕以上の微
粒子が可成シの敷金1れているのが通例である。In addition, although pure water has a small number of particles in its purified state, the sterilizers have been removed during the ion exchange process, making it easy for fungi and other microorganisms to propagate and grow. Usually, a deposit of fine particles with a particle size of 0.1 [μfn] or more is included.
そしてこのような微粒子が基板上に存在するとCr金属
の密着性を妨げて剥離が生じ易くマスク不良の原因とな
る。If such fine particles exist on the substrate, they interfere with the adhesion of the Cr metal and tend to cause peeling, resulting in mask defects.
(d) 発明の目的
本発明は水洗洗浄仮乾燥した状態で基板への微粒子の付
窮が少い乾燥力法を提供することを目的−とする。(d) Purpose of the Invention An object of the present invention is to provide a drying method that reduces the amount of particles attached to a substrate in a water-washed and temporarily dried state.
(e) 発明の構成
本発明の目的は水洗洗浄処理後に凍結させた被洗υ物を
乾燥雰囲気内でスピンナに装着し高速回転させると共に
加熱して転線さぜる無塵丸線方法tこよシ達成すること
ができる。(e) Structure of the Invention The object of the present invention is to provide a dust-free round wire method in which the object to be washed, which has been frozen after washing with water, is mounted on a spinner in a dry atmosphere, rotated at high speed, and heated and twisted. can be achieved.
(f)発明の実施例
し行い最後it純水洗浄を行って乾燥するのは通常とら
れている乾燥方法である。(f) It is a commonly used drying method to carry out an embodiment of the invention, and then wash it with pure water and dry it.
然し乍ら先に記したように可成りの数の微粒子が純水中
に含まれておシこの数は時間経過と共に増加する傾向が
ある。However, as mentioned above, a considerable number of fine particles are contained in pure water, and the number of particles tends to increase over time.
それ故そのま\乾燥したのでは微粒子の基板面相゛出は
避けられない。Therefore, if the substrate is dried as it is, the appearance of fine particles on the substrate surface cannot be avoided.
そこで本発す」は水が凍結して結晶が発達する際に異物
が排除きれる原理を利用して基板面から微粒子を引き離
す。Therefore, the proposed method uses the principle that foreign substances are removed when water freezes and crystals develop to separate microparticles from the substrate surface.
こ\で氷の結晶構造は4面体構造の中心に酸素イオン(
0−)がまた頂点部に水素イオン(H+)があムO−一
の電気陰性度のため水素結合を形成しており、H+は総
べて共有されて3次元に連結すると共にH+は0−一相
互を結んだ線上に位置する結晶構造をとる。Here, the ice crystal structure has an oxygen ion (
0-) is also formed at the apex by a hydrogen ion (H+) due to the electronegativity of AmO-1, and all H+ are shared and connected in three dimensions, and H+ is 0. - It has a crystal structure located on a line connecting each other.
そこで水が冷却されて氷となる場合は急冷されて微細な
多結晶の集合体を作シ微粒子を境界部に取シ込む場合を
別として氷の成長と共に微粒子は結晶格子外に排除され
て結晶中には異積物質は存在しない状態が得られる。When the water is cooled and becomes ice, it is rapidly cooled to form fine polycrystalline aggregates, and apart from the case where fine particles are taken into the boundaries, as the ice grows, the fine particles are excluded from the crystal lattice and crystallized. A state is obtained in which there is no foreign material inside.
本発明に係る乾燥方法は基板を0〔℃〕以下に丁は表面
に付着している水を結晶化することにより微粒子′に基
板面から離し、この状態を保ったま\乾燥させるもので
ある。In the drying method according to the present invention, the substrate is heated to a temperature below 0 [° C.], and the water adhering to the surface is crystallized to form fine particles separated from the substrate surface, and the particles are dried while maintaining this state.
その方法として洗浄の終った基板はこれを保持する枠体
に入れたま\o (℃)以下の雰囲気に移し表面に付着
している水を凍結せめ、次にこれをとり出し巣1図と第
2図に示すように赤外線ランプ1を上部に備えたスピン
ナ2に基板3′f:セットする0こ\で図の(5)はス
ピンナ2f:備えた本発明に係る乾燥装置の構成図また
同図(B)はスピンナ2の平面図であや、基板30表面
の水は凍結しているがその付着量は僅かであplそのた
め枠体からの取り出しは容易でありまたスピンナ2への
装着も容易である。The method is to place the cleaned substrate in a holding frame and move it to an atmosphere below \℃ (°C) to freeze the water adhering to the surface. As shown in Figure 2, a substrate 3'f: is set on a spinner 2 equipped with an infrared lamp 1 on the upper part, and (5) in the figure is a block diagram of a drying apparatus according to the present invention equipped with a spinner 2f. Figure (B) is a plan view of the spinner 2.Although the water on the surface of the substrate 30 is frozen, the amount of adhesion is very small.Therefore, it is easy to take out from the frame and also easy to attach to the spinner 2. It is.
こ\でスピンナ2は真空チャック]し構を備えておシ、
モータ4によシ高速回転する回転軸5の軸芯を買込て試
料保持台6の表面にまで遅する減圧吸引機構により基板
3は保持されると共にこの場合は爪部7によりfけシ出
しを防ぐ構造がとられている。The spinner 2 is equipped with a vacuum chuck mechanism.
The substrate 3 is held by a decompression suction mechanism in which the shaft center of the rotating shaft 5 rotates at high speed by the motor 4 and is slowed down to the surface of the sample holding table 6, and in this case, the substrate 3 is removed by the claw portion 7. A structure is in place to prevent this.
か\るスピンナ2iL例えば片也1]に開閉可能な扉が
あシ、これを通して基板3の装着かり能であシ、また上
部に基板加熱用の赤外線ラング1また側面に乾燥空気、
乾燥窒素(N、)などの供給孔9を設えたドラフト10
内に設けられている。そして常に基板3が乾燥雰囲気に
あるようにし、モータ4の始動スイッチに同期して赤外
線ラングが点燈し基板3の表面の氷8が融解し遠心力に
より飛散すると共に急速に乾燥する構成となっている。The spinner 2iL, for example, Kataya 1, has a door that can be opened and closed, through which the board 3 can be mounted, and an infrared ray rung 1 for heating the board on the top, and dry air on the side.
A draft 10 equipped with a supply hole 9 for supplying dry nitrogen (N, ), etc.
It is located inside. Then, the circuit board 3 is always kept in a dry atmosphere, and the infrared lamp turns on in synchronization with the start switch of the motor 4, and the ice 8 on the surface of the circuit board 3 melts and scatters due to centrifugal force, rapidly drying. ing.
このように洗浄後基板3の上に微粒子全含まぬ状態を作
ると共に急速に乾燥・することによシ微粒子の付着量が
非常に少い表面状態を得ることができる。このような基
板乾燥法をとる場合、従来は乾燥基板を顕微鏡薪察する
場合視野内に粒径が1000(A)以上の微粒子が数個
必ず視野内に存在していたが本発明の方法を実施する場
合は殆んどの場合微粒子を認めることができない。By creating a state in which the substrate 3 after cleaning does not contain any particulates and rapidly drying it in this way, a surface state with a very small amount of adhesion of particulates can be obtained. When using such a substrate drying method, conventionally, when a dried substrate was inspected under a microscope, several fine particles with a particle size of 1000 (A) or more were always present within the field of view, but the method of the present invention is implemented. In most cases, fine particles cannot be observed.
(g) 発明の効果
本発り」はホトマスク形成のように粒径か1000(A
)程度の微少粒子の存在も歩缶りに影響する基板乾燥に
おいて歩留りを改良するためになされたものであって本
発明の実施によシ微粒子の付着が減少し歩留りの改善が
可能となる。(g) Effects of the invention The present invention has a particle size of 1000 (A) as in photomask formation.
) The presence of particles as small as 100% was made to improve the yield in substrate drying, which affects the drying process, and by implementing the present invention, the adhesion of fine particles is reduced, making it possible to improve the yield.
第1図は本発明を実施するのに使用する乾燥装置の構成
11ii ’Fjir図、また第2図はスピンナ部の平
面−℃
図において、ih赤外線ランプ、2はスピンナ、3は基
板、7は爪部、8#′i氷、9は乾燥ガス供給口、lO
はドラフト。
峯l唄
″#2唄FIG. 1 is a 11ii 'Fjir diagram of the structure of the drying apparatus used to carry out the present invention, and FIG. 2 is a plan view of the spinner section, in which an ih infrared lamp, 2 a spinner, 3 a substrate, and 7 a Claw part, 8#'i ice, 9 is dry gas supply port, lO
is a draft. Mine Uta''#2 song
Claims (1)
スピンナに装着し高速回転させると共に加熱して乾燥さ
せることを特徴とする無塵乾燥方法0A dust-free drying method 0 characterized in that the object to be cleaned, which has been frozen after washing with water, is mounted on a spinner in a dry atmosphere, rotated at high speed, and heated and dried.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19162283A JPS6083333A (en) | 1983-10-13 | 1983-10-13 | Drying method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19162283A JPS6083333A (en) | 1983-10-13 | 1983-10-13 | Drying method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6083333A true JPS6083333A (en) | 1985-05-11 |
JPH0452614B2 JPH0452614B2 (en) | 1992-08-24 |
Family
ID=16277698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19162283A Granted JPS6083333A (en) | 1983-10-13 | 1983-10-13 | Drying method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6083333A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62245639A (en) * | 1986-04-18 | 1987-10-26 | Hitachi Ltd | Vapor drying device |
JPS6373626A (en) * | 1986-09-17 | 1988-04-04 | Hitachi Ltd | Treating device |
JPS63155729A (en) * | 1986-12-19 | 1988-06-28 | Hitachi Electronics Eng Co Ltd | Method and apparatus for cleaning silicon wafer at low temperature |
US4883775A (en) * | 1986-12-17 | 1989-11-28 | Fujitsu Limited | Process for cleaning and protecting semiconductor substrates |
EP0423761A2 (en) * | 1989-10-17 | 1991-04-24 | Applied Materials, Inc. | Apparatus and method for particle removal by forced fluid convection |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57178328A (en) * | 1981-04-27 | 1982-11-02 | Hitachi Ltd | Wafer dryer |
JPS5834923A (en) * | 1981-08-27 | 1983-03-01 | Toshiba Corp | Drying method of semiconductor device |
-
1983
- 1983-10-13 JP JP19162283A patent/JPS6083333A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57178328A (en) * | 1981-04-27 | 1982-11-02 | Hitachi Ltd | Wafer dryer |
JPS5834923A (en) * | 1981-08-27 | 1983-03-01 | Toshiba Corp | Drying method of semiconductor device |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62245639A (en) * | 1986-04-18 | 1987-10-26 | Hitachi Ltd | Vapor drying device |
JPS6373626A (en) * | 1986-09-17 | 1988-04-04 | Hitachi Ltd | Treating device |
US4883775A (en) * | 1986-12-17 | 1989-11-28 | Fujitsu Limited | Process for cleaning and protecting semiconductor substrates |
JPS63155729A (en) * | 1986-12-19 | 1988-06-28 | Hitachi Electronics Eng Co Ltd | Method and apparatus for cleaning silicon wafer at low temperature |
EP0423761A2 (en) * | 1989-10-17 | 1991-04-24 | Applied Materials, Inc. | Apparatus and method for particle removal by forced fluid convection |
JPH03145130A (en) * | 1989-10-17 | 1991-06-20 | Applied Materials Inc | Device for removing contaminated grains from body surface and method |
Also Published As
Publication number | Publication date |
---|---|
JPH0452614B2 (en) | 1992-08-24 |
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