JPH08292552A - Production of pellicle film - Google Patents

Production of pellicle film

Info

Publication number
JPH08292552A
JPH08292552A JP9575295A JP9575295A JPH08292552A JP H08292552 A JPH08292552 A JP H08292552A JP 9575295 A JP9575295 A JP 9575295A JP 9575295 A JP9575295 A JP 9575295A JP H08292552 A JPH08292552 A JP H08292552A
Authority
JP
Japan
Prior art keywords
substrate
pellicle film
film
pellicle
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9575295A
Other languages
Japanese (ja)
Other versions
JP3235764B2 (en
Inventor
Susumu Shirasaki
享 白崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP9575295A priority Critical patent/JP3235764B2/en
Publication of JPH08292552A publication Critical patent/JPH08292552A/en
Application granted granted Critical
Publication of JP3235764B2 publication Critical patent/JP3235764B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE: To easily and efficiently obtain a pellicle film by controlling the temp. of a substrate to be slightly higher than the dew point when a pellicle film formed on the substrate is peeled from the substrate surface. CONSTITUTION: The material for formation of a pellicle film is dissolved in a solvent to prepare a soln. of 3-10% concn. The obtd. soln. is applied to form a pellicle film on a silicon substrate or glass substrate by soln. casting method using a spin coating or knife coating device. And, when the pellicle film is peeled from the substrate to obtain a pellicle film, the temp. of the substrate is controlled to be a slightly higher than the dew point and the film is peeled from the substrate. For example, when the film is formed in a clean room at 23 deg.C and 50% relative humidity, a cooling plate is maintained at 11 deg.C, which is slightly higher than the dew point 10.8 deg.C under those conditions. Then, the substrate is mounted on the cooling plate and cooled to peel the pellicle film from the substrate. Thereby, only the substrate surface necessary for peeling can be selectively exposed to a water vapor environment and the film can be easily peeled.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明はペリクル膜の製造方法、
特にはLSI、超LSIなどの半導体デバイスあるいは
液晶表示板を製造する際のゴミよけとして使用されるペ
リクル膜の製造方法に関するものである。
The present invention relates to a method for producing a pellicle film,
In particular, the present invention relates to a method for manufacturing a pellicle film used as a dust shield when manufacturing a semiconductor device such as an LSI or VLSI or a liquid crystal display panel.

【0002】[0002]

【従来の技術】LSI、超LSIなどの半導体デバイス
あるいは液晶表示板などの製造においては、半導体ウエ
ハーあるいは液晶用原板に光を照射してパターニングを
するわけであるが、この場合に用いる露光原版にゴミが
付着していると、このゴミが光を吸収したり、光を反射
してしまうため、転写したパターニングが変形したり、
エッジががさついたりしてしまい、寸法、品質、外観な
どがそこなわれ、半導体装置や液晶表示板などの性能や
製造歩留まりの低下を来すという問題があった。このた
め、これらの作業は通常クリーンルームで行われるが、
このクリーンルーム内でも露光原版を常に正常に保つこ
とが難しいので、露光原版の表面にゴミよけの為の露光
用の光を良く通過させるペリクルを貼着する方法が行わ
れている。
2. Description of the Related Art In the manufacture of semiconductor devices such as LSI and VLSI, or liquid crystal display plates, patterning is performed by irradiating a semiconductor wafer or a liquid crystal original plate with light. If dust is attached, it absorbs light or reflects light, which may cause deformation of the transferred pattern,
There is a problem in that the edges become rough and the dimensions, quality, and appearance are impaired, and the performance and manufacturing yield of semiconductor devices, liquid crystal display panels, and the like are reduced. For this reason, these tasks are usually done in a clean room,
Even in this clean room, it is difficult to always keep the original exposure plate normal. Therefore, a method has been used in which a pellicle that allows the light for exposure to pass therethrough to pass dust well is attached to the surface of the original exposure plate.

【0003】この場合、ゴミは露光原版の表面には直接
付着せず、ペリクル膜上に付着するため、リソグラフィ
ー時に焦点を露光原版のパターン上に合わせておけば、
ペリクル上のゴミは転写に無関係となるのであるが、こ
のペリクルの貼着は光を良く通過させるニトロセルロー
ス、酢酸セルロースなどからなる透明なペリクル膜をア
ルミニウム、ステンレスなどからなるペリクル枠の上部
にペリクル膜の良溶媒を塗布し、風乾して接着する(特
開昭 58-219023号)か、アクリル樹脂やエポキシ樹脂な
どの接着剤で接着する(米国特許第 4.861.402号、特公
昭 63-27,707号)という方法が採られている。
In this case, since dust does not directly adhere to the surface of the exposure original plate but adheres to the pellicle film, if the focus is aligned with the pattern of the exposure original plate during lithography,
The dust on the pellicle is unrelated to the transfer, but the attachment of this pellicle consists of a transparent pellicle film made of nitrocellulose, cellulose acetate, etc. that allows light to pass well, and a pellicle frame made of aluminum, stainless steel, etc. placed on top of the pellicle. A good solvent for the film is applied and air-dried for adhesion (JP-A-58-219023) or an adhesive such as acrylic resin or epoxy resin (US Pat. No. 4.861.402, JP-B-63-27,707). No.) is adopted.

【0004】[0004]

【発明が解決しようとする課題】しかして、このペリク
ル膜の製造は、これらの膜材料を溶媒を用いて3〜10%
の濃度の溶液にした後、スピンコーターやナイフコータ
ーを用いる溶液キャスト法でシリコンウエハーやガラス
基板の上で成膜させる方法で行われており、このように
して作られたペリクル膜はこの基板上に成膜された後、
基板から剥離されるのであるが、その方法としては水中
で剥離する方法、水蒸気中で剥離する方法などが提案さ
れている。しかし、水中での剥離では水の汚れはもちろ
んのこと、基板の背面などの水と接触する部分から発生
する異物が水を媒体として膜を汚染してしまう。また水
蒸気中での剥離は水中での剥離のような異物の発生は抑
制することができるが、剥離が行われる空間を完全に水
蒸気雰囲気にすることが必要であり、ペリクルの製造は
一般にクリーンルーム内で行われており、その中で一部
分だけ水蒸気雰囲気等の環境を変えるというのは困難を
伴う。特に液晶用の大きな膜を剥離する場合には、大き
な水蒸気雰囲気を作る装置が必要となることも考える
と、工業化を考えた場合に困難な点が多い。
However, the production of the pellicle membrane is carried out by using these membrane materials in a solvent in an amount of 3 to 10%.
After making the solution with the concentration of, the solution casting method using a spin coater or a knife coater is used to form a film on a silicon wafer or a glass substrate. After being deposited on
Although it is peeled from the substrate, a method of peeling in water and a method of peeling in water vapor have been proposed as the method. However, peeling in water not only stains water, but also foreign matter generated from a portion such as the back surface of the substrate that comes into contact with water contaminates the film using water as a medium. In addition, peeling in water vapor can suppress the generation of foreign matter such as peeling in water, but it is necessary to completely make the space where peeling occurs in a steam atmosphere, and pellicle manufacturing is generally performed in a clean room. However, it is difficult to change the environment such as the steam atmosphere in only a part of it. Considering that an apparatus for creating a large water vapor atmosphere is required especially when a large film for liquid crystal is peeled off, there are many difficulties in industrialization.

【0005】[0005]

【課題を解決するための手段】本発明はこのような不利
を解決したペリクル膜の製造方法に関するもので、これ
はペリクル膜の基板からの剥離工程を、基板の温度を露
点温度より僅かに高い温度に下げて行うことを特徴とす
るものである。
SUMMARY OF THE INVENTION The present invention relates to a method for manufacturing a pellicle film which solves such disadvantages, in which the step of peeling a pellicle film from a substrate is carried out by setting the temperature of the substrate slightly higher than the dew point temperature. It is characterized in that the temperature is lowered to the temperature.

【0006】すなわち、本発明者らは基板上に成膜した
ペリクル膜の基板からの剥離方法について種々検討した
結果、このペリクル膜の基板からの剥離工程を、従来の
ような水中または水蒸気とすることなく、基板の温度を
露点温度より僅かに高い温度に下げて大気中で剥離した
ところ、この場合には水中剥離のような汚染拡散がなく
なり、また水蒸気剥離のように特別の環境装置も必要と
しないので、目的とするペリクル膜を容易に、且つ効率
よく得ることができるということを見出して本発明を完
成させた。以下にこれをさらに詳述する。
That is, as a result of various studies on the method for peeling the pellicle film formed on the substrate from the substrate, the present inventors have decided that the step of peeling the pellicle film from the substrate is water or water vapor as in the conventional case. Without removing the temperature of the substrate to a temperature slightly higher than the dew point temperature and peeling in air, in this case, contamination diffusion such as underwater peeling disappears, and special environmental equipment such as water vapor peeling is also required. Therefore, the present invention has been completed by finding that the target pellicle film can be obtained easily and efficiently. This will be described in more detail below.

【0007】[0007]

【作用】本発明はペリクル膜の製造方法に関するもので
あり、これはペリクル膜の基板からの剥離工程を、基板
の温度を露点温度より僅かに高い温度に下げて行なうこ
とを特徴とするものであり、これによればペリクル膜の
基板からの剥離工程を水中で行なう方法に比べて汚染拡
散が少なくなるという有利性が与えられ、この剥離工程
を水蒸気中で行なう方法に比べて水蒸気雰囲気を作る必
要がないという有利性が与えられる。
The present invention relates to a method for manufacturing a pellicle film, which is characterized in that the step of peeling the pellicle film from the substrate is performed by lowering the temperature of the substrate to a temperature slightly higher than the dew point temperature. This provides the advantage that the diffusion of contamination is less than the method of performing the peeling process of the pellicle film from the substrate in water, and creates a steam atmosphere compared to the method of performing this peeling process in steam. The advantage is given that it is not necessary.

【0008】したがって、本発明によるペリクル膜の製
造は、常法にしたがってペリクル膜形成材料を溶剤に溶
解して濃度が3〜10%の溶液を作り、この溶液をスピン
コーターやナイフコーターなどを用いて溶液キャスター
法でシリコン基板やガラス基板の上にペリクル膜を成膜
したのち、これを基板から剥離してペリクル膜を作成す
るときに、このペリクル膜の基板からの剥離を基板の温
度を露点温度より僅かに高い温度に下げて行なえばよ
い。
Therefore, in the production of the pellicle film according to the present invention, the pellicle film forming material is dissolved in a solvent according to a conventional method to prepare a solution having a concentration of 3 to 10%, and this solution is used with a spin coater or a knife coater. When a pellicle film is formed on a silicon or glass substrate by the solution caster method and then peeled off from the substrate to form a pellicle film, the peeling of the pellicle film from the substrate depends on the substrate temperature as a dew point. It may be lowered to a temperature slightly higher than the temperature.

【0009】この場合におけるペリクル膜の基板からの
剥離は、基板の温度を露点温度より僅かに高い温度まで
下げるのであるが、実際の方法は冷却板を露点温度に近
づけて一定温度とし、その上に基板をおいて基板の温度
を下げればよいが、ペリクルは一般にクリーンルームで
製造され、クリーンルームは恒温恒湿であるため、普通
露点も一定になっている。例えばクリーンルームが温度
23℃、相対湿度50%であるときの露点温度は10.8℃であ
るので、この冷却板を11℃にし、この冷却板に基板を載
せて冷却すれば基板を露点温度10.8℃より僅かに高い11
℃に保つことができる。
In this case, the peeling of the pellicle film from the substrate lowers the temperature of the substrate to a temperature slightly higher than the dew point temperature. In an actual method, the cooling plate is brought close to the dew point temperature to a constant temperature, and Although it is only necessary to place the substrate on the substrate and lower the temperature of the substrate, since the pellicle is generally manufactured in a clean room and the clean room is at constant temperature and humidity, the dew point is usually constant. For example, the temperature in a clean room
Since the dew point temperature at 23 ° C and relative humidity 50% is 10.8 ° C, if this cooling plate is set to 11 ° C and the substrate is placed on this cooling plate to cool, the substrate is slightly higher than 10.8 ° C.
Can be kept at ° C.

【0010】このようにして基板温度を露点温度より僅
かに高い温度にまで冷却してから、この基板からペリク
ル膜を剥離すると、基板を剥離するときの環境全体を水
蒸気雰囲気にすることなく、剥離に必要な基板表面だけ
を選択的に水蒸気雰囲気にすることができるので、ペリ
クル膜を容易に、かつ効率よく剥離することができる
が、基板の温度を露点温度以下にすると基板表面に水滴
がつき、膜を汚染してしまうので、この基板温度は露点
以下にしないことが必要とされる。
When the pellicle film is peeled off from the substrate after the substrate temperature is cooled to a temperature slightly higher than the dew point temperature in this way, the peeling is performed without making the entire environment for peeling the substrate into a water vapor atmosphere. The pellicle film can be stripped easily and efficiently because only the surface of the substrate necessary for heat treatment can be selectively exposed to the water vapor atmosphere. However, if the temperature of the substrate is below the dew point temperature, water drops will form on the surface of the substrate. The substrate temperature is required not to be lower than the dew point because it contaminates the film.

【0011】[0011]

【実施例】つぎに本発明の実施例、比較例をあげる。 実施例、比較例1〜2 膜材料としてのサイトップCTX-S [旭硝子(株)製商品
名]をその溶媒・ CTsolv 180[旭硝子(株)製商品
名]に溶解して5重量%溶液とした。ついで、この溶液
を直径 200mm、厚さ3mmの表面研磨した石英基板に、ス
ピンコーターを用いて膜厚0.82μmの透明膜として形成
させ、 180℃で15分間乾燥してペリクル膜を成膜した。
EXAMPLES Next, examples and comparative examples of the present invention will be described. Examples, Comparative Examples 1 and 2 Cytop CTX-S [trade name of Asahi Glass Co., Ltd.] as a membrane material was dissolved in its solvent, CTsolv 180 [trade name of Asahi Glass Co., Ltd.] to prepare a 5 wt% solution. did. Then, this solution was formed as a transparent film having a film thickness of 0.82 μm on a surface-polished quartz substrate having a diameter of 200 mm and a thickness of 3 mm by using a spin coater, and dried at 180 ° C. for 15 minutes to form a pellicle film.

【0012】つぎに温度23℃、相対湿度50%のクリーン
ルーム内で、11℃に冷却した冷却板にこのペリクル膜を
成膜した基板を載せて、この基板を11℃まで冷却したの
ち、膜を剥離したところ、表1に示したように容易に良
好なペリクル膜が得られた。しかし、比較のためにこの
冷却板の温度をこの23℃、相対湿度50%という条件下に
おける露点温度10.8℃より高い16℃、23℃とし、この冷
却板により基板の温度を16℃、23℃としてペリクル膜の
剥離をしたところ、表1に示したように16℃では剥離は
できたが膜にシワが発生し、23℃では膜が破れるという
不利が発生した。
Next, in a clean room at a temperature of 23 ° C. and a relative humidity of 50%, the substrate on which the pellicle film was formed was placed on a cooling plate cooled to 11 ° C., and the substrate was cooled to 11 ° C. Upon peeling, a good pellicle film was easily obtained as shown in Table 1. However, for comparison, the temperature of this cooling plate is set to 16 ° C and 23 ° C, which is higher than the dew point temperature of 10.8 ° C under the conditions of 23 ° C and relative humidity of 50%, and the temperature of the substrate is set to 16 ° C and 23 ° C by this cooling plate. When the pellicle film was peeled off, as shown in Table 1, peeling was possible at 16 ° C, but wrinkles were generated in the film, and at 23 ° C, there was a disadvantage that the film was broken.

【0013】[0013]

【表1】 [Table 1]

【0014】[0014]

【発明の効果】本発明はペリクル膜の製造方法に関する
ものであり、これによれば水中剥離のときのような汚染
拡散がなくなり、また水蒸気剥離のように特別の環境装
置も必要としない剥離が可能となるし、目的とするペリ
クル膜を容易に、且つ効率よく得ることができるという
有利性が与えられる。
INDUSTRIAL APPLICABILITY The present invention relates to a method for producing a pellicle film, which eliminates contamination diffusion such as in the case of underwater stripping, and does not require special environmental equipment such as steam stripping. It is possible and the advantage that the target pellicle film can be obtained easily and efficiently is given.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 基板表面に形成したペリクル膜を基板表
面から剥離する方法において、基板の温度を露点温度よ
り僅かに高い温度に下げて行なうことを特徴とするペリ
クル膜の製造方法。
1. A method for producing a pellicle film, which comprises removing the pellicle film formed on the surface of the substrate from the surface of the substrate by lowering the temperature of the substrate to a temperature slightly higher than the dew point temperature.
JP9575295A 1995-04-21 1995-04-21 Method of manufacturing pellicle film Expired - Lifetime JP3235764B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9575295A JP3235764B2 (en) 1995-04-21 1995-04-21 Method of manufacturing pellicle film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9575295A JP3235764B2 (en) 1995-04-21 1995-04-21 Method of manufacturing pellicle film

Publications (2)

Publication Number Publication Date
JPH08292552A true JPH08292552A (en) 1996-11-05
JP3235764B2 JP3235764B2 (en) 2001-12-04

Family

ID=14146242

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9575295A Expired - Lifetime JP3235764B2 (en) 1995-04-21 1995-04-21 Method of manufacturing pellicle film

Country Status (1)

Country Link
JP (1) JP3235764B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105807823A (en) * 2016-04-15 2016-07-27 玖誉科技有限公司 Electronic-cooling-slice control system and circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105807823A (en) * 2016-04-15 2016-07-27 玖誉科技有限公司 Electronic-cooling-slice control system and circuit

Also Published As

Publication number Publication date
JP3235764B2 (en) 2001-12-04

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