JPS6035733A - Manufacture of dustproof cover for photomask - Google Patents

Manufacture of dustproof cover for photomask

Info

Publication number
JPS6035733A
JPS6035733A JP58144384A JP14438483A JPS6035733A JP S6035733 A JPS6035733 A JP S6035733A JP 58144384 A JP58144384 A JP 58144384A JP 14438483 A JP14438483 A JP 14438483A JP S6035733 A JPS6035733 A JP S6035733A
Authority
JP
Japan
Prior art keywords
film
substrate
nitrocellulose
thin film
water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58144384A
Other languages
Japanese (ja)
Inventor
Yasunori Fukumitsu
福光 保典
Mitsuo Kono
河野 満男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Kasei Corp
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Asahi Kasei Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd, Asahi Kasei Kogyo KK filed Critical Asahi Chemical Industry Co Ltd
Priority to JP58144384A priority Critical patent/JPS6035733A/en
Publication of JPS6035733A publication Critical patent/JPS6035733A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Abstract

PURPOSE:To obtain easily the titled cover of a uniform thickness with high reproducibility by adhering a frame to a thin nitrocellulose film formed on a smooth substrate and by immersing the film in water to strip the substrate. CONSTITUTION:A smooth substrate such as a silicon substrate having >=lambda/4 smoothness is coated with a soln. contg. 3-15wt% nitrocellulose having 10.7- 12.2% nitrogen content by means of a spin coater under conditions of 25-30 deg.C casting temp., 5-10cc extent of casting and 500-3,000r.p.m. number of revolutions of the spinner to form a thin nitrocellulose film of 0.5-3mum thickness. A frame is adhered to the film, and the film is immersed in water for >=15min to strip the substrate. The film is then taken out of the water and dried. The thin nitrocellulose film can be stretched tight on the frame.

Description

【発明の詳細な説明】 近年、大規模集積回路は高密度化が進み、回路の画線中
も2〜3ミクロンと極めて細いものとなって来ている。
DETAILED DESCRIPTION OF THE INVENTION In recent years, the density of large-scale integrated circuits has increased, and the lines in the circuits have become extremely thin, as small as 2 to 3 microns.

この様に高密度化により画線中が細くなるにつれ、フォ
トマスク上のゴミが問題となっている。即ち、フォトマ
スク上に数ミクロンの目に見えないゴミが存在しても、
プロジェクション、ステッパーでウエノ1上のレジスト
にフォトマスク上の回路画像を投影、露光する際に、画
像とともにゴミが転写されてしまう為、回路の短絡、断
線等が起ってしまう。ケミの除去防止の為、露光操作は
全てクリーンルーム内で行なう等厳密なゴミ防止対策を
行ないつつ作業を進めても、作業者、装置等から発生す
るゴミを零とすることは不可能の為、完壁なものとはな
シえない。
As the image line becomes thinner due to higher density, dust on the photomask becomes a problem. In other words, even if invisible dust of several microns exists on the photomask,
When the circuit image on the photomask is projected and exposed onto the resist on the wafer 1 using a projection or stepper, dust is transferred along with the image, resulting in short circuits, disconnections, etc. of the circuit. Even if we proceed with strict dust prevention measures such as performing all exposure operations in a clean room to prevent the removal of chemicals, it is impossible to eliminate dust generated from workers, equipment, etc. It cannot be considered perfect.

そこで、フォトマスク上にカッ々−をして、フォトマス
ク上の回路画像部分に直接ノミが付着するのを防止する
方法が、最近採用されてきている。
Therefore, a method has recently been adopted to prevent fleas from directly adhering to the circuit image portion on the photomask by placing a seal on the photomask.

この方法は、フォトマスクから数閣離れた位置に透明な
薄膜を設置することによシ、ケミはこの薄膜上に付着す
る為、フォトマスクの回路画像をウェハ上のレジストに
結像させるに際し、ゴミは結像されないことを原理とし
ている。この方法によれば、クリーン度が若干悪い環境
に於いても、ケミはこの薄膜上にしか付着せず、回路の
短絡、断線等による不良化が大巾に減少し、大規模集積
回路製造上非常に有用なものとなる。
This method involves placing a transparent thin film at a position a few feet away from the photomask. Since the chemical adheres to this thin film, when the circuit image of the photomask is imaged onto the resist on the wafer, The principle is that dust is not imaged. According to this method, even in an environment with slightly poor cleanliness, chemicals will only adhere to this thin film, greatly reducing defects due to short circuits, disconnections, etc., and making it easier to manufacture large-scale integrated circuits. It will be very useful.

この薄膜はフォトマスクから数問離した位置に設置する
為、通常アルミのフレームに張ったものをフォトマスク
に粘着させて使用しており、このアルミフレームに薄膜
を張ったものを、この発明ではフォトマスク用防塵力・
ぐ−と呼ぶこととする。
Since this thin film is installed at a position several distances away from the photomask, it is normally used by attaching it to an aluminum frame and adhering it to the photomask. Dustproof power for photomasks
I'll call it Gu.

この防塵力、?−の薄膜は、光の透過性力;重要であり
、プロジェクションに使用する場合、その露光々源の光
の波長、即ち350 nm〜450 nmに於いて92
%以上の透過率が、又、ステン・ξ−を使用する場合に
は、436nmで98係以上の透過率が必要とされる。
This dustproof power? - The thin film has a light transmittance; this is important, and when used for projection, the wavelength of the light of the exposure source, i.e. 92 nm to 450 nm, is important.
% or higher, and when using stainless steel, a transmittance of 98 coefficient or higher at 436 nm is required.

この様に高い光の透過率をもつ膜は、この波長に於ける
吸収のない物質であることは勿論、膜の厚みを5ミクロ
ン以下としないと達成されない。又、膜内の厚みのバラ
ツキは、光の透過率のノセラツキとなるとともに、画像
の乱れの原因ともなる為、膜厚みの精度も±2係以内と
することが必要となる。
A film with such high light transmittance cannot be achieved unless it is made of a material that does not absorb at this wavelength, and the thickness of the film must be 5 microns or less. Further, since variations in the thickness within the film cause fluctuations in light transmittance as well as disturbances in the image, the accuracy of the film thickness must also be within ±2 factors.

又、防塵カッ々−上へのゴミの付着は、露光時の回路の
短絡、断線等に影響は少ないものの、大きなゴミは問題
となるので、ゴミの付着しにくく、又、付着したゴミを
エアーブロー等で容易に落すことが出来る様、薄膜は非
帯電性であることが望ましい。
In addition, although dust adhering to the top of the dustproof cover has little effect on short circuits or disconnections during exposure, large dust can become a problem, making it difficult for dust to adhere to it, and removing adhering dust by air. It is desirable that the thin film be non-static so that it can be easily removed by blowing or the like.

これらの要求特性を満たすものとして、この薄膜にはニ
トロセルロースの薄膜が用いられている。
In order to meet these required characteristics, a nitrocellulose thin film is used for this thin film.

ニトロセルロースによる防塵カッ々−の製造方法は、一
般に水面、水銀面等の流体表面上にニトロセルロース溶
液をキャストし、形成した薄膜をアルミフレームに張っ
て作成するが、流体表面上に形成された薄膜は、取扱い
が難しく、すぐシワが発生し、フレームにシワなく、張
った状態に取付けることが極めて難しい。又、流体表面
にキャストにより薄膜を形成させる際にも、流体表面を
静止させることが必要であるが、微かな振動、風によシ
流体表面が波長ち、シワが発生したり、薄膜の厚みの均
一性が損なわれ、目的とする薄膜を得ることが出来ない
The method for producing a dust-proof cutter using nitrocellulose is generally to cast a nitrocellulose solution onto a fluid surface such as a water surface or a mercury surface, and then stretch the formed thin film onto an aluminum frame. Thin membranes are difficult to handle, wrinkle easily, and are extremely difficult to install in a taut condition without wrinkles on the frame. Also, when forming a thin film on a fluid surface by casting, it is necessary to keep the fluid surface stationary, but slight vibrations and wind may cause the wavelength of the fluid surface to change, causing wrinkles and thin film thickness. The uniformity of the film is impaired, making it impossible to obtain the desired thin film.

そこで、本発明者はニトロセルロースの薄膜をフレーム
にシワなく張る方法を検討すると七もに、容易に均一な
厚みの薄膜を作成する方法を検討し、本発明に到った。
Therefore, the inventor of the present invention investigated a method of applying a thin film of nitrocellulose to a frame without wrinkles, and after studying a method of easily creating a thin film of uniform thickness, the present invention was achieved.

本発明は、溶液キャスト法によシ、厚み5ミクロン以下
のニトロセルロース薄膜を平滑基板上に形成させ、接着
剤にてこの薄膜とアルミフレームとを接着させた後、水
中に浸し、水中で基板をノ・り離させ、次いで、水中よ
り取出して乾燥させることによシ、フォトマスク用防塵
カバーを製造する方法であり、本発明により、優れたフ
ォトマスク用防塵力、S−が、容易にかつ再現性良く製
造することが出来る。
The present invention involves forming a nitrocellulose thin film with a thickness of 5 microns or less on a smooth substrate using a solution casting method, bonding this thin film to an aluminum frame with an adhesive, and then immersing the substrate in water. This is a method for manufacturing a dustproof cover for a photomask by separating the material from water, then taking it out of water and drying it. According to the present invention, excellent dustproofing power for a photomask, S- can be easily obtained. Moreover, it can be manufactured with good reproducibility.

以下に本発明を更に詳細に説明する。The present invention will be explained in more detail below.

ニトロセルロースの薄膜は、流体表面上へのキャスト法
で述べた通り、単体での取扱いが難しい為、薄膜を基板
上に形成させ、薄膜とフレームを接着後、基板を取外す
ことによりフレームに薄膜を張ることがUSP 437
8953に提案されている。この方法によれば基板はそ
のままハク離させるか、基板上に離型剤をあらかじめ塗
布することにより、ハク離を容易にすることが出来ると
している。しかし、基板と薄膜をそのま\ハク離させよ
うと干れば、!+[が破h、かb−伸γドて1−→い自
好なものは得られない。又、基板上に離型剤をあらかじ
め塗布する方法に於いては、離型剤を塗布する際の表面
の平面性の・ζラッキがその上に塗布するニトロセルロ
ース薄膜の厚みの・ぐラッキに影響を与え、膜厚みの)
々ラッキが増大するなり、離型剤が薄膜に一部転写され
る可能性があり、性能に悪い効果をもたらす。
As mentioned in the casting method on the fluid surface, the thin film of nitrocellulose is difficult to handle alone, so the thin film is formed on the substrate, the thin film and the frame are bonded, and the substrate is removed to apply the thin film to the frame. USP 437
8953. According to this method, the substrate can be peeled off as it is, or by applying a mold release agent on the substrate in advance, peeling can be facilitated. However, if you try to separate the substrate and thin film as they are, then... If + [ is broken h or b - elongation γ , then 1 - → cannot be obtained. In addition, in the method of pre-coating a mold release agent on the substrate, the flatness of the surface when applying the mold release agent may affect the thickness of the nitrocellulose thin film applied thereon. of film thickness)
As the racking increases, part of the release agent may be transferred to the thin film, which has a negative effect on performance.

そこで本発明者は基板のハク離方法を種々検討した結果
、基板上に形成したニトロセルロース薄膜にあらかじめ
フレームを接着後、水の中に浸し、水中で基板をハク離
させれば、容易に基板はハク離出来、薄膜が破れたり、
伸びだりすることがないととを見出した。又、ニトロセ
ルロースは1%程度の水分を吸湿する為、基板をハク離
後、水より取出し乾燥させることにより、フレームに接
着されたニトロセルロース薄#r!、収量 L、フレー
ムにタルミなく張ることが出来る。このことは、水の中
にニトロセルロース薄膜を浸すことにょシ初めて発現す
るものであり、基板のハク離のし易すさとともに、フォ
トマスク用防塵力・セーを製造するにあたり極めて有用
なものとなる。
Therefore, as a result of studying various methods for peeling off the substrate, the present inventor found that if a frame is bonded in advance to the nitrocellulose thin film formed on the substrate, then immersed in water and the substrate is peeled off underwater, the substrate can be easily removed. It may peel off or the thin film may be torn.
I found that it does not stretch. Also, since nitrocellulose absorbs about 1% of moisture, after peeling off the substrate, take it out of the water and dry it to make a thin #r nitrocellulose glued to the frame! , Yield L, can be hung on the frame without sagging. This is something that only appears when a nitrocellulose thin film is immersed in water, and in addition to making it easier to peel off the substrate, it is also extremely useful in manufacturing dust-proofing and coating for photomasks. .

尚、水中でハク酸させるとは、実質的に水中と同じ状態
であれば良く、例えば、水中に浸した後、水中より取出
しその′−!まノ・り離した場合にも、ノ・2離する面
に水が存在すれば良好にハク酸が出来るが、水を拭き取
るとハク酸は不充分となる。
It should be noted that succinic acid in water only needs to be in substantially the same condition as in water, for example, after being immersed in water and then taken out of the water. Even in the case of separation, if there is water on the surface to be separated, succinic acid can be produced satisfactorily, but if the water is wiped off, succinic acid will be insufficient.

尚、本発明に用いる水は、水単独でもかまわないし、界
面活性剤等、本発明の効果を消失せしめない添加剤で、
かつ、ニトロセルロース、接着剤を啓解させないもので
あれば添加することが出来る。
The water used in the present invention may be water alone, or additives such as surfactants that do not eliminate the effects of the present invention.
In addition, nitrocellulose and adhesives can be added as long as they do not cause deterioration.

かかる添加剤は、ハク離後のニトロセルロース薄膜の表
面に水滴を形成せず、均一に薄膜を水でぬらす為、乾燥
後に水の跡が残らない効果をもたらす。又、水に浸す時
間は短かすぎると水が充分浸透せず、ハク酸が容易に出
来ない為、15分以上浸すことが必要である。
Such additives do not form water droplets on the surface of the nitrocellulose thin film after peeling and uniformly wet the thin film with water, resulting in the effect that no traces of water remain after drying. Also, if the time of soaking in water is too short, the water will not penetrate sufficiently and succinic acid will not be formed easily, so it is necessary to soak for 15 minutes or more.

一方、基板については、表面が平滑であり、ニトロセル
ロース溶液に侵されないものであれば使用出来るが、基
板の平面性が膜厚みの精度に影響する為、実用上は限定
される。即ち、薄膜の膜内厚み精度を±22係内とする
には、基板の平面性がA/4以上必要とされ、この様に
平滑な表面を持つものは、シリコン基板、ガラス板、ガ
ラス板上へ金属を蒸着したもの等が有るが、ニトロセル
ロース薄膜とのハク酸のし易さから、シリコン基板が最
も優れた基板である。
On the other hand, as for the substrate, it can be used as long as it has a smooth surface and is not attacked by the nitrocellulose solution, but it is limited in practical use because the flatness of the substrate affects the accuracy of the film thickness. In other words, in order to maintain the internal thickness accuracy of a thin film within ±22 degrees, the flatness of the substrate must be A/4 or higher, and those with such a smooth surface include silicon substrates, glass plates, and Although there are substrates on which metal is vapor-deposited, a silicon substrate is the most excellent substrate because of the ease with which succinic acid forms with the nitrocellulose thin film.

平滑基板上にニトロセルロースの薄膜を形成させる溶液
キャスト法のうち、フォトマスク用防塵カッ々−の薄膜
を精度良く製造出来る方法は、スピンコーターを使用す
る方法、基板の周囲に堰を設けた基板表面を水平に保ち
、その上に溶液をキャストする方法、およびナイフコー
ターを使用する方法が挙げられる。
Of the solution casting methods that form a thin film of nitrocellulose on a smooth substrate, the methods that can produce a dust-proof thin film for photomasks with high precision are those that use a spin coater, and those that use a substrate with a weir around the substrate. Methods include keeping the surface level and casting the solution onto it, and using a knife coater.

スピンコーターを使用して、基板上にニトロセルロース
の薄膜を形成させる場合、薄膜の厚みは、ニトロセルロ
ースの濃度、溶媒の種類、キャスト温度、スピンコータ
ーの回転数、キャスト軟等に依存する。この為、希望す
る厚みの薄膜を作成するには、種々条件の検討が必要で
あり、−概に規定出来ないが、例示すれば、膜厚ミロ。
When a thin film of nitrocellulose is formed on a substrate using a spin coater, the thickness of the thin film depends on the concentration of nitrocellulose, the type of solvent, the casting temperature, the rotational speed of the spin coater, the softness of the cast, and the like. For this reason, in order to create a thin film with a desired thickness, it is necessary to consider various conditions, and although it cannot be generally defined, an example would be a film thickness of Mil.

5〜3ミクロンの場合、酢酸n−ブチルを溶媒とし、ニ
トロセルロースの濃度が3〜15重量%、キャスト温度
が25℃〜30℃、キャスト量5〜10cc、スピナー
回転級soo〜3000 r、p、rn、とすることに
よJ、125m〆の基板上に形成することが出来る。
For 5-3 microns, use n-butyl acetate as a solvent, nitrocellulose concentration 3-15% by weight, casting temperature 25°C-30°C, cast amount 5-10cc, spinner rotation grade soo-3000 r, p. , rn, it can be formed on a substrate of J, 125 m.

一方、平滑基板の周囲に堰を設けて、ニトロセルロース
溶液をキャストする方法に於いては、膜の厚みはニトロ
セルロース濃度とキャスト量によって規定される。この
方法で最も重要な点は基板表面の水平性であり、膜内の
厚み精度を±2%以内とするには、製造すべき膜の大き
さ部分での水平度を0.5ミクロン以内とすることによ
り達成される。又、ニトロヒルロース浴液の濃度は、高
すぎると膜内の基板表面上に均一にキャストされず、低
すぎると溶媒の蒸発に長時間を要する為、0.5〜2重
量係が好′ましい。
On the other hand, in a method in which a weir is provided around a smooth substrate and a nitrocellulose solution is cast, the thickness of the film is determined by the nitrocellulose concentration and the amount of cast. The most important point in this method is the horizontality of the substrate surface, and in order to keep the thickness accuracy within the film within ±2%, the horizontality of the size of the film to be manufactured must be within 0.5 microns. This is achieved by In addition, if the concentration of the nitrohirulose bath solution is too high, it will not be uniformly cast on the surface of the substrate within the film, and if it is too low, it will take a long time to evaporate the solvent, so it is preferably 0.5 to 2% by weight. Delicious.

又、ナイフコーターを用いる方法では、基板とナイフの
間隔により膜厚みの精度が決定される為、この間隔を精
密に設定することが重要であり、ナイフの両端での基板
面との間隔を0.5ミクロン以内に設定することにより
膜内の膜厚みを±2%以内の誤差とすることが出来る。
In addition, in the method using a knife coater, the accuracy of the film thickness is determined by the distance between the substrate and the knife, so it is important to set this distance precisely. By setting it within .5 microns, the film thickness within the film can be within ±2% error.

又、ニトロセルロースの濃度は、高すぎると均一に塗布
出来ず、低すぎると塗布後溶液が流れて厚みが変化する
為、10〜200〜20重量%い。
Furthermore, if the concentration of nitrocellulose is too high, it will not be possible to apply it uniformly, and if it is too low, the solution will flow after coating and the thickness will change, so it should be 10 to 200 to 20% by weight.

尚、本発明に用いるニトロセルロースとは、窒素含量1
0.7〜12.2係のものをいう。
Note that the nitrocellulose used in the present invention has a nitrogen content of 1
It refers to those in the 0.7 to 12.2 section.

以下、実施例にて本発明を更に詳細に説明する。Hereinafter, the present invention will be explained in more detail with reference to Examples.

尚、膜の厚みの測定は、分光光度計で測定した膜の透過
率の干渉波より算出した。即ち、測定された隣りあう干
渉波の山のピーク波長をそれぞれ石。
The thickness of the film was calculated from the interference wave of the film transmittance measured with a spectrophotometer. In other words, the peak wavelengths of the measured peaks of adjacent interference waves are each expressed as 1.

22ミクロン(λl〉λ2)とし、λ簾で゛の干渉数を
Nとすれば、λ2での干渉数はN+1となるので、ニト
ロセルロースの屈折率を1.51とすると、膜の厚みd
ミクロンは次式で与えられる。
22 microns (λl>λ2), and if the number of interferences at λ2 is N, then the number of interferences at λ2 is N+1, so if the refractive index of nitrocellulose is 1.51, the film thickness d
Micron is given by the following formula.

a=(λtXN)/(2X1.51) 実施例 1 =(−oセルロース(旭化成工業(株)製、RIG=2
0窒素含量11.5〜12.2係)を酢酸n−ブチルに
溶解させ、5重量%の溶液を作成した。
a = (λt
0 nitrogen content (11.5-12.2%) was dissolved in n-butyl acetate to prepare a 5% by weight solution.

一方、5インチダのシリコンウエノ・をMEKにて脱脂
洗浄、風乾後、スピンコーターにセットし、作成した二
)・ロセルロース尋液を滴下し、低速回転500 r、
p、mで10秒、高速回転1050 r、p、m。
On the other hand, after degreasing and cleaning a 5-inch piece of silicone Ueno with MEK and air drying, it was set in a spin coater, the prepared 2) cellulose fat solution was added dropwise, and the rotor was rotated at a low speed of 500 r.
10 seconds at p, m, high speed rotation 1050 r, p, m.

で15秒間にて塗布し、これを風乾させ、ウニノー上に
ニトロセルロースの薄膜を形成させた。
It was applied for 15 seconds and air-dried to form a thin film of nitrocellulose on Uni-No.

次ニ、アルミフレーム(内径105 mm ) I)端
面にエポキシ接着剤(昭和高分子(株)製アラルダイト
ラピッド)を塗布し、ニトロセルロース薄膜と接着させ
、1時間硬化させた。
Next, an epoxy adhesive (Araldite Rapid, manufactured by Showa Kobunshi Co., Ltd.) was applied to the end face of the aluminum frame (inner diameter 105 mm), and was adhered to the nitrocellulose thin film, followed by curing for 1 hour.

このものをフィルム用水切剤(富士写真フィルム@)製
1?ライウェル)を1係含む水の中に浸し、30分間放
置後ウつノ・を静かにノ・り離させ、水より取出し、風
乾させることにより、アルミフレームにニトロセルロー
ス薄膜がシワなく張られ水防のないものが得られた。
Is this one made by film draining agent (Fuji Photo Film @)? By soaking the aluminum frame in water containing 1 part of nitrocellulose, leaving it for 30 minutes, gently removing it, removing it from the water, and letting it air dry, a thin nitrocellulose film is applied to the aluminum frame without wrinkles, making it waterproof. I got what I didn't have.

得られた防塵カバーの薄膜の厚みは、0.867ミクロ
ンであり、膜厚みの7マラツキは、±0.6係となり極
めて均一性の良いものであった。又、436 nmの光
での透過率は99.2%であった。
The thickness of the thin film of the obtained dustproof cover was 0.867 microns, and the variation in film thickness was a factor of ±0.6, indicating extremely good uniformity. Further, the transmittance of light at 436 nm was 99.2%.

実施例 2 実施例1と同じニトロセルロースを酢酸n−ブチルに溶
解させ、1重量%の溶液を作成した。
Example 2 The same nitrocellulose as in Example 1 was dissolved in n-butyl acetate to create a 1% by weight solution.

一方、5インチダのシリコンウェハの周囲に高さ3間、
内径100m+nのステンレスフレームラ接着させたも
のを、水平度が100mmにつき0.5ミクロン以内と
なる様設置し、この上にニトロセルロース溶液3.63
ノを滴下し乾燥させ、ウェハ上にニトロセルロース薄膜
を形成させた。
On the other hand, around the 5-inch silicon wafer, a height of 3 meters was placed.
A stainless steel flamer with an inner diameter of 100m+n was installed so that the horizontality was within 0.5 microns per 100mm, and a nitrocellulose solution of 3.63 mm was placed on top of this.
was added dropwise and dried to form a nitrocellulose thin film on the wafer.

次にアルミフレーム(内径80消)の端面にエポキシ接
着剤(昭和高分子@)製アラルダイドラピッP)を塗布
したものをニトロセルロース薄膜と接着させ、1時間硬
化させた。
Next, an epoxy adhesive (Araldide Rapid P manufactured by Showa Kobunshi@) was applied to the end face of an aluminum frame (inner diameter 80 mm) and adhered to the nitrocellulose thin film, and the frame was cured for 1 hour.

その後、このものを水の中に浸し、30分放置後、ウェ
ハをハク離させ、水より取出し風乾させることにより、
アルミフレームにニトロセルロース薄膜がシワなく張ら
れたものが得られた。
After that, the wafer was immersed in water, left for 30 minutes, peeled off, taken out of the water, and air-dried.
An aluminum frame with a nitrocellulose thin film stretched without wrinkles was obtained.

得られた防塵力・々−の薄膜の厚みは2.87 ミクロ
ン、厚み精度±1.3係であり、均一性の高いものでち
った。又、350〜450 nmでの光の透過率は、9
2.1係であった。
The thickness of the obtained dustproof film was 2.87 microns, the thickness accuracy was ±1.3, and it was highly uniform. In addition, the transmittance of light in the range of 350 to 450 nm is 9
It was Section 2.1.

実施例 3 実施例1と同じニトロセルロースを酢酸n−ブチルに溶
解し、lO重重量%溶液を作成した。
Example 3 The same nitrocellulose as in Example 1 was dissolved in n-butyl acetate to prepare a 1O wt % solution.

一方、6インチ2のシリコン基板上にナイフコーターを
設置し、ナイフと基板の間隔を47ミクロンに設定し、
作成したニトロセルロース溶液をキャストし、風乾する
ことによりウエノ・上にニトロセルロースの薄膜を形成
させた。
On the other hand, a knife coater was installed on a 6 inch 2 silicon substrate, and the distance between the knife and the substrate was set to 47 microns.
The prepared nitrocellulose solution was cast and air-dried to form a thin film of nitrocellulose on Ueno.

次にアルミフレーム(内径60園)の端面にエポキシ接
着剤(昭和高分子(株)製アラルダイトラピッド)を塗
布し、ニトロセルロース薄膜と接着させ、1時間硬化さ
せた。
Next, an epoxy adhesive (Araldite Rapid, manufactured by Showa Kobunshi Co., Ltd.) was applied to the end face of the aluminum frame (inner diameter: 60 mm), and the adhesive was bonded to the nitrocellulose thin film, followed by curing for 1 hour.

このものを水の中に浸し、30分放置後ウつノ・をハク
離し、水よシ取出し風乾することによりアルミフレーム
にニトロセルロース薄膜がシワなく張られたものを得た
This product was immersed in water, left for 30 minutes, peeled off, removed from the water, and air-dried to obtain a nitrocellulose thin film on an aluminum frame without wrinkles.

得られた防塵カッ々−の薄膜の厚みは、2.89 ミク
ロン、厚み精度は±1.7%であり均一性の高いもので
あった。又、350〜450 nmでの光の透過率は9
2.0係であった。
The thickness of the obtained dust-proof thin film was 2.89 microns, the thickness accuracy was ±1.7%, and it was highly uniform. Also, the transmittance of light in the range of 350 to 450 nm is 9
I was in charge of 2.0.

比較例 1 実施例1と同じ方法で作成したシリコンウエノ・上のニ
トロセルロース薄膜をノーり離するに際し、水の中に入
れずそのままノ・り離を行なったところ、ウェハのハク
離が困難で、ニトロセルロース薄膜が伸び、フレームに
シワなく張ったものを得ることが出来なかった。
Comparative Example 1 When peeling off a nitrocellulose thin film on a silicon wafer prepared in the same manner as in Example 1, it was difficult to peel off the wafer when the wafer was peeled off without being immersed in water. , the nitrocellulose thin film stretched and it was not possible to obtain a frame that was stretched without wrinkles.

比較例 2 表面積度2/2のガラス板をシリコン基板のかわりに使
用する以外は実施例3と全く同じ方法で防塵カバーを作
成した。
Comparative Example 2 A dustproof cover was produced in exactly the same manner as in Example 3, except that a glass plate with a surface area of 2/2 was used instead of the silicon substrate.

舟られた防塵カッ々−の薄膜の厚みは2.85ミクロン
、厚み精度は±3.2係であり、防塵カッ々−用薄膜と
しては厚みの均一性が不充分であった。
The thickness of the thin film for the dust-proof cutter was 2.85 microns, and the thickness accuracy was ±3.2, and the uniformity of the thickness was insufficient for a thin film for a dust-proof cutter.

特許出願人 旭化成工業株式会社Patent applicant: Asahi Kasei Industries, Ltd.

Claims (2)

【特許請求の範囲】[Claims] (1)溶液キャスト法によりニトロセルロース薄膜を平
滑基板上に形成せしめ、該薄膜にフレームを接着せしめ
た後、水中に浸して基板をノ・り離し、次いで乾燥する
ことを特徴とするフォトマスク用防塵カバーの製造方法
(1) For photomasks, which are characterized in that a nitrocellulose thin film is formed on a smooth substrate by a solution casting method, a frame is adhered to the thin film, the substrate is peeled off by immersion in water, and then dried. How to manufacture dustproof cover
(2)平滑基板がシリコン基板である特許請求の範囲第
1項記載のフォトマスク用防塵力・々−の製造方法
(2) A method for producing a dustproof power for a photomask according to claim 1, wherein the smooth substrate is a silicon substrate.
JP58144384A 1983-08-09 1983-08-09 Manufacture of dustproof cover for photomask Pending JPS6035733A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58144384A JPS6035733A (en) 1983-08-09 1983-08-09 Manufacture of dustproof cover for photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58144384A JPS6035733A (en) 1983-08-09 1983-08-09 Manufacture of dustproof cover for photomask

Publications (1)

Publication Number Publication Date
JPS6035733A true JPS6035733A (en) 1985-02-23

Family

ID=15360875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58144384A Pending JPS6035733A (en) 1983-08-09 1983-08-09 Manufacture of dustproof cover for photomask

Country Status (1)

Country Link
JP (1) JPS6035733A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0241329A (en) * 1988-08-02 1990-02-09 Asahi Kasei Denshi Kk Production of thin film for pellicle
JPH0516159A (en) * 1991-07-12 1993-01-26 Shin Etsu Chem Co Ltd Manufacture of resin membrane
US6342292B1 (en) 1997-12-16 2002-01-29 Asahi Kasei Kabushiki Kaisha Organic thin film and process for producing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0241329A (en) * 1988-08-02 1990-02-09 Asahi Kasei Denshi Kk Production of thin film for pellicle
JPH0516159A (en) * 1991-07-12 1993-01-26 Shin Etsu Chem Co Ltd Manufacture of resin membrane
US6342292B1 (en) 1997-12-16 2002-01-29 Asahi Kasei Kabushiki Kaisha Organic thin film and process for producing the same
US6797207B2 (en) 1997-12-16 2004-09-28 Asahi Kasei Emd Corporation Process for producing organic thin film

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