594868 五、發明說明（1) 5 - 1發明領域： 本發明係有關於一種移除晶圓邊緣光阻層的方法，特 別是一種有關於移除晶圓邊緣光阻層並使繼續存在之光 層具有斜角（Bevel)邊緣的方法。 5 - 2發明背景： 光阻層被廣泛應用於現代積體電路製程中已是眾所周 :的事：#由將塗佈溶液流至晶圓上同時旋轉晶圓，即旋 二Spi>n Coat ing)製程，光阻層被反覆使用於半導體晶 罢古止光阻層旋塗於晶圓上時，通常不只有晶圓的邊緣覆 :有先阻材料，晶圓背面也會有光阻材料。如第一 A圖所 了在接Ϊ ί塗之光阻層1 2覆蓋一晶圓1 〇之邊緣及背面邊緣 極可的顯影製程中，曰曰曰圓的邊緣及背面的光阻材料 ;:=下，，而這些殘留的光阻材料便成為潛在的污 綠 &成各種令人困擾的製程問題。 、、#· $ 1 =上疋使用晶圓邊緣曝光（Waf er Edge ExP〇sure: 地，a、、彖沖洗（Edge Bead Rinse)法解決上述問題。不幸 #的ί 7邊緣曝光法及邊緣沖洗法各自均有本質上無法避 594868 五、發明說明（2) 之光阻材料已被移除，並造成光阻層1 2及其所覆蓋之薄膜 之垂直邊緣。此垂直邊緣極可能造成後續沈積之金屬或多 晶矽層剝離（P e e 1 i n g)或是斷裂的問題。此外，在後續钱 刻製程之中，晶圓邊緣粗糙表面1 4極可能生成，而粗糙表 面的凹坑（P i t s)可能吸附或留有殘餘的光阻材料。這些 殘餘的光阻材料極可能污染後續製程並造成後續沈積的薄 膜附著性的問題。 邊緣沖洗法以一道（S t r e am)溶劑沖洗晶圓邊緣以移 除晶圓邊緣的光阻材料。由於先天上的限制，邊緣沖洗法 H 也會造成一些製程上的問題。如第一 C圖所示，經邊緣沖 洗法除去晶圓邊緣的光阻材料後，有光阻材料1 6殘留。殘 留的光阻材料1 6可能引起後續形成的薄膜附著或污染的問 題。另外，邊緣沖洗法亦可能造成不對稱的問題，如第一 D圖所示，該圖為表面塗有光阻層1 2的晶圓1 0之俯視圖。 · 有鑑於上述傳統方法的種種缺點，因此極有必要尋求 解決之道。這即為本發明提出的目的。 5 - 3發明目的及概述： 本發明的一目的為提供一種移除晶圓邊緣光阻層的方 法，並使光阻層具有一傾斜邊緣，同時保護晶圓邊緣免於594,868 V. described invention (1) 5 - 1 Field of the Invention: The present invention relates to a method for removing the photoresist layer from the wafer edge, especially a wafer with a light on the edge of the photoresist layer is removed and continued existence Layers have beveled edges. 5 - 2 Background to the invention: a photoresist layer is widely used in modern integrated circuit manufacturing process are all the weeks: things: # wafer simultaneously by the rotational flow of the coating solution to the wafer, i.e., two rotary Spi > n Coat ing) process, a photoresist layer used in the semiconductor crystal is repeatedly strike stop ancient photoresist layer spin-coated on the wafer, not only the edge of the wafer is generally covered: with a first barrier material, the back surface of the wafer will also resist material. As in the FIG. A first contact Ϊ ί coating of photoresist layer 12 covers the edges of the wafer 1 and a back edge of the square pole may be in a development process, said circle and said edge of said back surface of the photoresist material;: = ,, the remaining photoresist material which becomes a potential pollution green & into a variety of process problems disturbing. , ## $ 1 = Wafer edge exposure (Wafer Edge Exposure) is used to solve the above problems. Unfortunately, the # 7 edge exposure method and edge processing each method are not essentially avoid 594,868 V. Description of the invention (2) of the photoresist material has been removed, and the resulting film covered with the vertical photoresist layer 12 and the edge. this is likely to cause a vertical edge subsequent deposition The metal or polycrystalline silicon layer peels (pee 1 ing) or breaks. In addition, in the subsequent money engraving process, the rough surface 1 4 of the wafer edge is likely to be generated, and the rough surface pits (P its) may adsorption or leave residual photoresist material. the residual photoresist material is likely to cause contamination of subsequent processes and problems of adhesion of the subsequently deposited thin film edge to a flushing method (S tre am) rinsing the wafer edge to remove the solvent photoresist material wafer edge due to inherent limitations, the edge washing method H can also cause problems in the process. as shown in FIG first C, the edge-washing method to remove the photoresist material from the wafer edge, there Barrier material 16 remaining. The remaining photoresist material 16 may cause problems or contamination film is deposited subsequently formed. Further, the edge rinse method may also cause the problem of asymmetric, D as in the first figure, the graph surface Top view of wafer 10 coated with photoresist layer 12. In view of the various shortcomings of the conventional method described above, it is extremely necessary to find a solution. This is the purpose of the present invention. 5-3 Purpose and Summary of the Invention : an object of the present invention to provide a method of removing the photoresist layer, the wafer edge, and the photoresist layer having a beveled edge, while protecting the wafer from the edge
594868 五、發明說明（3) 被#刻。 本發明的另一目的為提供一種移除晶圓邊緣光阻層的 方法，同時不會有光阻材料殘留或污染的問題。 本發明的又一目的為避免因光阻材料殘留或污染所造 成後續沈積薄膜的問題。 為了達成上述之目的，本發明利用一位於一塗佈有光 阻的晶圓下方的光源，以此光源將晶圓邊緣光阻層曝光， 其中該晶圓是固定於一可旋轉的支撐裝置上。首先，將該 塗佈有光阻的晶圓固定於一可旋轉的支撐裝置上。其次旋 轉該支撐裝置並使該晶圓曝光。最後，顯影該晶圓。 上述有關發明的簡單說明及以下的詳細說明僅為範例 並非限制。其他不脫離本發明之精神的等效改變或修飾均 應包含在的本發明的專利範圍之内。 5 - 4發明的詳細說明： ❿ 在此必須說明的是以下描述之製程步驟及結構並不包 含積體電路之完整製程。本發明可以藉各種積體電路製程 技術來實施，在此僅提及瞭解本發明所需之製程技術。此594,868 V. described invention (3) is carved #. Another object of the present invention to provide a method of removing the photoresist layer, the wafer edge, and no photoresist residue or contamination problems. A further object of the present invention is to avoid contamination or photoresist residue had made to the follow-up of the deposited film. To achieve the above purposes, the present invention utilizes a light source positioned below the wafer is coated with a resist, in order to light the wafer edge exposure photoresist layer, wherein the upper wafer is fixed to a support means rotatable . First, the wafer is coated with photoresist on a support fixed to a rotatable means. Second, rotating the supporting means and the wafer exposure. Finally, developing the wafer. The foregoing brief description of the invention and the following detailed description are examples only and are not limiting. Other equivalent changes or modifications that do not depart from the spirit of the invention should be included in the patent scope of the invention. 5-4 Detailed description of the invention: 必须 What must be explained here is that the process steps and structure described below do not include the complete process of integrated circuits. The present invention may take a variety of integrated circuit process technology, that referred to herein only for the required process technology of the present invention. this
第6頁 594868 五、發明說明（4) 外’本發明應用不應僅 含其他半導體積體電路 以下將根據本發明 不均為間早的形式且未 利於瞭解本發明。 侷限在石夕積體電路製程上，而應包 製程’如钟化鎵等。 所附圖示做詳細的說明，請注意圖 依照比例描繪，而尺寸均被誇大以 本發明利用一位於—泠欲女t 士也、盾验曰冋6於塗佈有先阻的晶圓下方的光源， 以此光源將晶圓邊緩古β g π # μ从士产壯、彖先阻層曝先’其中該晶圓是固定於一 可旋轉的支撐裝置上。音土 ^ ^ ^ ^ ^ ^ i ^ 百先’將该塗佈有光阻的晶圓固定 於一可旋轉的支撐奘^ ^ ^ H瞧#。％、置上。/、^人疑轉該支撐裝置並使該晶 Η曝光。取後，顯影該晶圓。 層1 2之晶圓1 〇固定於 撐裝置2 0之下的光源 ，舉例來說，一矽晶 為< 1 00>之矽晶圓 圓’而也可以是製程 料，舉例來說，半導 方疋塗（Spin Coating 1A m之間。接著固定 一預定的速度旋轉， 度為光源方向與晶圓 1 0邊緣之光阻材料使 參考第二Α圖所*，塗佈有光阻 可旋轉的支撐裝置20,及一位於支 30。晶圓10可為一傳統之半導體晶圓 圓或一砷化鎵晶圓，.且以一晶體 較佳。請注意晶圓丨〇不必是空白的晶 進行中的晶圓。光阻層丨2可為 = 體製程用的正光阻材料。正2:: )於晶圓1 0之上，其厚度為約〇 5至約 在可旋轉的支撐裝置20上的晶圓10以 同時光源3 0調至一需要的角度，此角 10法線方向相交之夾角，並照射晶圓 594868Page 6 594868 V. Description of the invention (4) The application of the present invention should not only include other semiconductor integrated circuits. In the following, according to the present invention, it is not always early and is not conducive to understanding the present invention. Xi stone confined integrated circuit manufacturing process, but the process should be the packet 'etc. The gallium bell. Illustrates in detail the following description, note that in accordance with FIG drawn to scale, and dimensions are exaggerated for use in the present invention is located in a - t Shi Ling For Women also shield said test wafer Jiong below 6 prior to coating with a hindered a light source, a light source in order to slow the wafer edge ancient β g π # μ produced from persons strong, hog first resist layer exposed to 'in which the wafer is fixed on a rotatable support means. Sound soil ^ ^ ^ ^ ^ ^ i ^ Baixian 'fixed the photoresist-coated wafer to a rotatable support 奘 ^ ^ ^ H 看 #. %, Put on. /, ^ Suspiciously turned the support device and exposed the crystallite. After taking out, the wafer is developed. The wafer 10 of the layer 12 is fixed to the light source under the supporting device 20. For example, a silicon wafer is a silicon wafer of < 1 00 > and can also be a process material. Guide square coating (between Spin Coating 1A m. Then fixed a predetermined speed rotation, the degree of light source direction and the edge of the photoresist material on the wafer 10 to make reference to the second A picture *, coated with photoresist can be rotated The supporting device 20 and a support 30. The wafer 10 may be a conventional semiconductor wafer circle or a gallium arsenide wafer, and is preferably a crystal. Please note that the wafer need not be a blank crystal Wafer in progress. Photoresist layer 丨 2 can be = positive photoresist material for system process. Positive 2 ::) is on wafer 10, and its thickness is about 0.05 to about 20 in the rotatable support device 20. The wafer 10 above is adjusted to a required angle with the light source 30 at the same time, and the angle between the normal directions of the angle 10 intersects and irradiates the wafer 594868.
「曝光此角度範圍可為〇度至9 〇度，而以6 〇度為佳。光 ，^0可為傳統使用的光源，舉例來說，如放射紫外線光譜 (波長約3 5 0㈣至約45〇nm)的水銀燈（Mercury Lamp)或 燈/波長3 6 51^之lMine光源與波長436nm的G-Une 二击、了#見的光源。另外，波長nm的deep-UV光源與電 子朿（e-beam)及X —ray均可使用。 為了提高生產速率，晶圓 接者接受光源3 0照射。在接下 晶圓邊緣的光阻材料可隨用於 電路之光阻層—同移除。 1 0可在旋塗光阻層1 2之後緊 來的顯影製程中，經曝光的 定義晶圓1 〇上製造中之積體 光阻層1 2^邊^^所料不，/曰曰圓邊緣的光阻材料已被移除。 夕、喜祕 / 緣為斜角（Beve〇邊緣，正可u孕装曰η 之邊、濠，保護其免於在 7 乂復|日日圓1 〇 於光阻材料殘留月令汰* e &到蝕刻，因此可避免導因 利用本發明的# ,木溥膜剝離與附著性不佳的問題。 的方法，微電子工業界可有效提高生產良；。 並非=有：Γ的簡單說明及以下的詳細說明僅為範例 應包含在的；於：：Ϊ本發明之精神的等效改變或修飾约 你W承發明的專利範圍之内。 τ Θ 594868 圖式簡單說明 第一 A圖為一塗佈有一光阻層之晶圓之剖面圖； 第一 B圖顯示使用晶圓邊緣曝光法與蝕刻第一 A圖中所 示之晶圓的結果； 第一 C圖顯示使用邊緣沖洗法於第一 A圖中所示之晶圓 的結果； 第一 D圖為第一 C圖中所示之晶圓之俯視圖； % 第二A圖顯示本發明移除晶圓邊緣光阻層之方法與裝 置；及 第二B圖顯示移除晶圓邊緣光阻材料之結果。 主要部分之代表符號： _ 10 晶圓 12 光阻層 14 粗链表面 16 殘餘光阻材料 2 0 可旋轉支撐裝置 3 0 光源"This exposure may be a square of the angular range to 9 billion degrees, and preferably at 6 billion of light, the light source may be 0 ^ conventionally used, for example, radiation such as ultraviolet spectrum (wavelengths of about 35 to about 45 0㈣ 〇nm) mercury lamp (Mercury lamp) or a lamp / 3651 ^ wavelength of 436nm and the wavelength of the light source lMine G-Une two hit, # see the light source. Further, the wavelength nm of the UV light source and the electron-Deep Bouquet (e -beam) and X -ray may be used to increase the production rate, then the wafer 30 is irradiated by a light source can be accepted with a photoresist in the photoresist layer circuits take over the wafer edge -. with removal. 10 may be spin-coated photoresist layer 12 immediately after the development process to in the definition of the wafer by the exposure of a square in the manufacture of integrated photoresist layer 12 is not expected ^ ^^ sides, / said said circle The photoresist material on the edge has been removed. Evening, blissfulness / edge is beveled (Beve〇 edge, can be pregnant with the edge of η, 濠, protect it from 7 乂 | Japanese yen 1 〇 eliminating the residual photoresist material on order * e &. to etching, thereby avoiding due to the guide of the present invention using #, wood Pu film peeling problem of poor adhesion to a method microelectronic Sub-industry can effectively increase the production of the good; there is not =: Γ brief description and the following detailed description is merely an example should be included in the; :: Ϊ equivalent change in the spirit of the invention or modified about your W Chengfa Ming It is within the scope of patents. Τ Θ 594868 The diagram is briefly explained. The first A picture is a cross-sectional view of a wafer coated with a photoresist layer. The first B picture shows the use of wafer edge exposure and etching. The first A picture results shown wafer; Panel C shows a first result using the edge of the wafer as shown in FIG. a first method of flushing; plan view of the first wafer shown in graph D in FIG first C;% A second graph shows the present invention a method of removing photoresist from the wafer edge and apparatus; and a second B shows the results of removing the photoresist material from the wafer edge portion of the main symbol representing:. _ 10 photoresist wafers 12 Layer 14 Thick chain surface 16 Residual photoresist material 2 0 Rotatable support device 3 0 Light source
第9頁Page 9