JPS6074678A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS6074678A
JPS6074678A JP58182728A JP18272883A JPS6074678A JP S6074678 A JPS6074678 A JP S6074678A JP 58182728 A JP58182728 A JP 58182728A JP 18272883 A JP18272883 A JP 18272883A JP S6074678 A JPS6074678 A JP S6074678A
Authority
JP
Japan
Prior art keywords
conductivity type
type
diffusion layer
layer
dirt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58182728A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0580158B2 (enExample
Inventor
Shigenori Yakushiji
薬師寺　茂則
Susumu Yasaka
家坂　進
Tsukasa Hattori
服部　宰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58182728A priority Critical patent/JPS6074678A/ja
Publication of JPS6074678A publication Critical patent/JPS6074678A/ja
Publication of JPH0580158B2 publication Critical patent/JPH0580158B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP58182728A 1983-09-30 1983-09-30 半導体装置 Granted JPS6074678A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58182728A JPS6074678A (ja) 1983-09-30 1983-09-30 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58182728A JPS6074678A (ja) 1983-09-30 1983-09-30 半導体装置

Publications (2)

Publication Number Publication Date
JPS6074678A true JPS6074678A (ja) 1985-04-26
JPH0580158B2 JPH0580158B2 (enExample) 1993-11-08

Family

ID=16123401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58182728A Granted JPS6074678A (ja) 1983-09-30 1983-09-30 半導体装置

Country Status (1)

Country Link
JP (1) JPS6074678A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6353972A (ja) * 1986-08-22 1988-03-08 Hitachi Ltd 複合半導体装置
JPS6384067A (ja) * 1986-09-27 1988-04-14 Toshiba Corp 半導体装置の製造方法
US4943835A (en) * 1985-11-22 1990-07-24 Kabushiki Kaisha Toshiba Semiconductor device including protecting MOS transistor
US4956690A (en) * 1987-01-26 1990-09-11 Kabushiki Kaisha Toshiba Zero crossing type thyristor
US4992844A (en) * 1987-01-23 1991-02-12 Kabushiki Kaisha Toshiba Semiconductor device
JPH07147394A (ja) * 1994-08-05 1995-06-06 Hitachi Ltd 複合半導体装置
US5747836A (en) * 1995-09-11 1998-05-05 Sharp Kabushiki Kaisha Semiconductor integrated circuit provided with thyristor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58105572A (ja) * 1981-12-18 1983-06-23 Sanken Electric Co Ltd ゼロクロス光サイリスタ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58105572A (ja) * 1981-12-18 1983-06-23 Sanken Electric Co Ltd ゼロクロス光サイリスタ

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4943835A (en) * 1985-11-22 1990-07-24 Kabushiki Kaisha Toshiba Semiconductor device including protecting MOS transistor
JPS6353972A (ja) * 1986-08-22 1988-03-08 Hitachi Ltd 複合半導体装置
JPS6384067A (ja) * 1986-09-27 1988-04-14 Toshiba Corp 半導体装置の製造方法
US4992844A (en) * 1987-01-23 1991-02-12 Kabushiki Kaisha Toshiba Semiconductor device
US4956690A (en) * 1987-01-26 1990-09-11 Kabushiki Kaisha Toshiba Zero crossing type thyristor
JPH07147394A (ja) * 1994-08-05 1995-06-06 Hitachi Ltd 複合半導体装置
US5747836A (en) * 1995-09-11 1998-05-05 Sharp Kabushiki Kaisha Semiconductor integrated circuit provided with thyristor

Also Published As

Publication number Publication date
JPH0580158B2 (enExample) 1993-11-08

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