JPS6072222A - 半導体薄膜成長装置 - Google Patents

半導体薄膜成長装置

Info

Publication number
JPS6072222A
JPS6072222A JP58179884A JP17988483A JPS6072222A JP S6072222 A JPS6072222 A JP S6072222A JP 58179884 A JP58179884 A JP 58179884A JP 17988483 A JP17988483 A JP 17988483A JP S6072222 A JPS6072222 A JP S6072222A
Authority
JP
Japan
Prior art keywords
gas
reaction tube
pedestal
spacer
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58179884A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136980B2 (https=
Inventor
Yasuhiro Ishii
康博 石井
Yoshimoto Fujita
藤田　良基
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58179884A priority Critical patent/JPS6072222A/ja
Publication of JPS6072222A publication Critical patent/JPS6072222A/ja
Publication of JPH0136980B2 publication Critical patent/JPH0136980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
JP58179884A 1983-09-28 1983-09-28 半導体薄膜成長装置 Granted JPS6072222A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58179884A JPS6072222A (ja) 1983-09-28 1983-09-28 半導体薄膜成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58179884A JPS6072222A (ja) 1983-09-28 1983-09-28 半導体薄膜成長装置

Publications (2)

Publication Number Publication Date
JPS6072222A true JPS6072222A (ja) 1985-04-24
JPH0136980B2 JPH0136980B2 (https=) 1989-08-03

Family

ID=16073580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58179884A Granted JPS6072222A (ja) 1983-09-28 1983-09-28 半導体薄膜成長装置

Country Status (1)

Country Link
JP (1) JPS6072222A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430891A (en) * 1992-08-18 1995-07-04 U.S. Philips Corporation Tuning detection circuit for a high-frequency receiver, and receiver including such detection circuit
JP2008248998A (ja) * 2007-03-29 2008-10-16 Osaka Gas Co Ltd 輸送管の包囲体および包囲体の装着方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50347A (https=) * 1973-05-09 1975-01-06

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50347A (https=) * 1973-05-09 1975-01-06

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430891A (en) * 1992-08-18 1995-07-04 U.S. Philips Corporation Tuning detection circuit for a high-frequency receiver, and receiver including such detection circuit
JP2008248998A (ja) * 2007-03-29 2008-10-16 Osaka Gas Co Ltd 輸送管の包囲体および包囲体の装着方法

Also Published As

Publication number Publication date
JPH0136980B2 (https=) 1989-08-03

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