JPH0136980B2 - - Google Patents

Info

Publication number
JPH0136980B2
JPH0136980B2 JP58179884A JP17988483A JPH0136980B2 JP H0136980 B2 JPH0136980 B2 JP H0136980B2 JP 58179884 A JP58179884 A JP 58179884A JP 17988483 A JP17988483 A JP 17988483A JP H0136980 B2 JPH0136980 B2 JP H0136980B2
Authority
JP
Japan
Prior art keywords
gas
reaction tube
raw material
spacer
pedestal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58179884A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6072222A (ja
Inventor
Yasuhiro Ishii
Yoshimoto Fujita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP58179884A priority Critical patent/JPS6072222A/ja
Publication of JPS6072222A publication Critical patent/JPS6072222A/ja
Publication of JPH0136980B2 publication Critical patent/JPH0136980B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3418—Phosphides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
JP58179884A 1983-09-28 1983-09-28 半導体薄膜成長装置 Granted JPS6072222A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58179884A JPS6072222A (ja) 1983-09-28 1983-09-28 半導体薄膜成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58179884A JPS6072222A (ja) 1983-09-28 1983-09-28 半導体薄膜成長装置

Publications (2)

Publication Number Publication Date
JPS6072222A JPS6072222A (ja) 1985-04-24
JPH0136980B2 true JPH0136980B2 (https=) 1989-08-03

Family

ID=16073580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58179884A Granted JPS6072222A (ja) 1983-09-28 1983-09-28 半導体薄膜成長装置

Country Status (1)

Country Link
JP (1) JPS6072222A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06188763A (ja) * 1992-08-18 1994-07-08 Philips Electron Nv 検出器およびこの検出器を用いた高周波信号用受信機
JP4814824B2 (ja) * 2007-03-29 2011-11-16 大阪瓦斯株式会社 輸送管の包囲体および包囲体の装着方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50347A (https=) * 1973-05-09 1975-01-06

Also Published As

Publication number Publication date
JPS6072222A (ja) 1985-04-24

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