JPS6070783A - 発光ダイオ−ド表示装置 - Google Patents

発光ダイオ−ド表示装置

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Publication number
JPS6070783A
JPS6070783A JP58181708A JP18170883A JPS6070783A JP S6070783 A JPS6070783 A JP S6070783A JP 58181708 A JP58181708 A JP 58181708A JP 18170883 A JP18170883 A JP 18170883A JP S6070783 A JPS6070783 A JP S6070783A
Authority
JP
Japan
Prior art keywords
emitting diode
light
diode element
light emitting
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58181708A
Other languages
English (en)
Other versions
JPH0158874B2 (ja
Inventor
Yoshizo Mihashi
三橋　由蔵
Masataka Miyata
正高 宮田
Masanao Koba
木場　正直
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP58181708A priority Critical patent/JPS6070783A/ja
Publication of JPS6070783A publication Critical patent/JPS6070783A/ja
Publication of JPH0158874B2 publication Critical patent/JPH0158874B2/ja
Granted legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 く技術分野〉 本発明は発光ダイオード素子と、この素子の駆動用ＩＣ
とを一体的にモールドした構造の発光ダイオード装置に
関する。
〈発明の背景〉 発光ダイオード装置に特別な機能を付加するた１に駆動
用ＩＣを一つの樹脂内に一体化することが検討されてい
る。例えば、バッテリーチェッカと称し、発光ダイオー
ド素子の印加電圧が一定の範囲内にあるときだけ、発光
ダイオード素子が点灯するＩＣが使用される。このＩＣ
の回路図は第１図に示す通りである。
ＳＣは３個の端子を有し、第１端子ｌは電源の子端子に
接続され、第２端子２は出力端子で、第１端子ｌと第２
端子２間に発光ダイオード素子３０が接続される。第３
端子３は電源の一端子に接続され、第１端子１と第３端
子３間に電源が接続される。第１端子Ｉと第３端子３間
に電源電圧を検出するため、２つの抵抗４と５が直列接
続されて、その接続点が２つの比較器６と７の＋側入力
端子に加えられる。電源の両端子１，３間に２つの基準
電圧を作るため、２つの基準電圧素子８と９が接続され
る。この素子８，９はツェナーダイオードやＰＮ接合の
順方向降下電圧を利用する回路で構成される。素子８の
基準電圧は比較器６の一側端子に加えられる。素子９の
基準電圧は比較器７の一側端子に加えられる。比較器８
と９の出力はインバータ１０．１１と１２を介してフリ
ップフロップを構成する２つのナントゲート１３．１４
のセット端子とリセット端子にそれぞれ加えられる。ナ
ントゲート１４の出力はインバー％１５’（ｉ＝介し出
力トランジスタ１６のゲートに加えられる。
トランジスタ１６は限流抵抗１７を経て第２端子２に接
続される。
従って、電源電圧が１６ボルトから１０ボルトの間を変
化し、基準電圧素子８は検出電圧が３１５ボルト、素子
９は検出電圧が３０ボルトに設定されていたとすると、
電源電圧が充分高い場合、比較器６，７はともにＨｉｇ
ｈレベル出力となり、ナントゲート１３．１４が構成す
るフリップフロップの出力けＨｉ　ｇ　ｈレベルであり
、トランジスタ１６はオフ状態にあり１発光ダイオード
素子３０は不灯状態である。次に電源電圧が少し低下し
て基準電圧素子８の検出電圧以下に低下した場合、比較
器６はＬｏｗレベル出力となり、インバータ１０゜１１
を通してナントゲートＩ３に加えられる。し会しナント
ゲート１４の出力を変化させることができないので、ト
ランジスタ１６のオフは続き、発光ダイオード３０は不
灯のままである。更に電圧が低下すると、比較器７の出
力もＬｏｗとなり、これがインバータ］２を介して加え
られるのでナントゲート１４の出力ｔ　Ｌｏｗレベルに
変化させ、トランジスタ＋６ｉオンにするので発光ダイ
オード３０は点灯する。以上の動作を第２図に示す。
第１図のＩＣｉｄ１ｍＪ以下の面積に構成することが可
能で、発光ダイオード素子をマウントするリードフレー
ムにマウントすることができる。
〈発明の目的〉 本発明は上述のような回路を組込んだＩＣチップが発光
ダイオードチップに比較して同様に小さい形状に形成し
得ることに鑑み、発光ダイオード金駆動するＩＣを一体
的にモールドして、来示装置の小型化を図り経済性を高
めた表示装置を提供する。
〈実施例〉 本発明のＩＣ内蔵発光ダイオード装置の構成図面全第３
図に示す。
リードフレームは３本足で構成されており、中央のリー
ド片３Ｉは幅広に形成されている。この幅広部分の中央
部は、リードフレームを作る際に凹部３６が形成されて
いる。リード片３１の頂部に周知の方法で発光ダイオー
ド素子３０がマウントされ、そしてＡｌワイヤ３２が発
光ダイオード素子３０の電極とリード片３３間にボンデ
ィングされる。上記凹部３６の中にＩＣ４０がマウント
される。ＩＣ４０の第１端子Ｉ１、第２端子２、第３端
子３、はそれぞれリード片３３，８１，３４にそれぞ汎
ワイヤボンディングされる。Ｉ　Ｃ４０ｆｌ黒色樹脂３
５で封止される。発光ダイオード素子３０は赤外発光を
するので、暗赤色樹脂３７で発光ダイオード素子３０と
ＩＣ４０ｉモールドする。
このように、本発明（は発光ダイオード素子３０をリー
ドフレームの頂部にマウントし、ＩＣ’４０をリードフ
レームの側面にマウント口・、たから、ＩＣ４０は発光
ダイオード素子３０の自発□光による光の影響を受ける
ことがない。捷た赤色発光ダイオード素子３０に対し暗
赤色樹脂でモールドしたから、発光ダイオード素子３０
の発光は透過させ、且つ外部光がＩＣ４０に照射される
のを防止する。
暗赤色樹脂の光透過特性は第４図に示す通りである。ま
たＩ　Ｃ４，０はリードフレームに凹部３６を形成し、
この凹部３６の中にマウントし、更に黒色樹脂で封止し
たから外部光の影響を除くことができる。また上記実施
例は発光ダイオード装置の外形を全く変化させることな
くｒｃを一体にモールドすることができる。以上のよう
にして発光ダイオード素子とその駆動ＩＣを一体的にモ
ールドして使用することができる。
〈効　果〉 以上本発明によれば、発光ダイオードの発光にほとんど
影響されることなくＩＣを発光ダイオードと共に樹脂封
止することができ、ＩＣ内蔵の発光ダイオードを得るこ
とができ、発光ダイオードの用途を著しく拡大すること
ができる。
図、第２図は同バッテリチェッカ回路の動作ケ説明する
ためのタイムチャート、第３図は本発明による一実施例
を示す側面図、第４図は同実施例のモールド樹脂の光透
過特性を示す図である。

Claims (1)

    【特許請求の範囲】
  1. １、　発光ダイオード素子ヲリードフレーム頂部にマウ
    ントし、上記リードフレームの側面に凹部を形成し、上
    記凹部に上記発光ダイオード素子の駆動用ＩＣｉマウン
    ドし、上記ＩＣを黒色樹脂で封止し、上記発光ダイオー
    ド素子、上記リードフレーム先端部及び上記ＩＣｔ上記
    発光ダ
JP58181708A 1983-09-27 1983-09-27 発光ダイオ−ド表示装置 Granted JPS6070783A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58181708A JPS6070783A (ja) 1983-09-27 1983-09-27 発光ダイオ−ド表示装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58181708A JPS6070783A (ja) 1983-09-27 1983-09-27 発光ダイオ−ド表示装置

Publications (2)

Publication Number Publication Date
JPS6070783A true JPS6070783A (ja) 1985-04-22
JPH0158874B2 JPH0158874B2 (ja) 1989-12-13

Family

ID=16105466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58181708A Granted JPS6070783A (ja) 1983-09-27 1983-09-27 発光ダイオ−ド表示装置

Country Status (1)

Country Link
JP (1) JPS6070783A (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7473014B2 (en) * 2002-07-17 2009-01-06 Sharp Kabushiki Kaisha Light emitting diode lamp and light emitting diode display unit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51137268U (ja) * 1975-04-28 1976-11-05
JPS51162670U (ja) * 1975-06-18 1976-12-24

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51137268U (ja) * 1975-04-28 1976-11-05
JPS51162670U (ja) * 1975-06-18 1976-12-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7473014B2 (en) * 2002-07-17 2009-01-06 Sharp Kabushiki Kaisha Light emitting diode lamp and light emitting diode display unit

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JPH0158874B2 (ja) 1989-12-13

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