JPS6066890A - 半導体レ−ザ装置 - Google Patents
半導体レ−ザ装置Info
- Publication number
- JPS6066890A JPS6066890A JP17536883A JP17536883A JPS6066890A JP S6066890 A JPS6066890 A JP S6066890A JP 17536883 A JP17536883 A JP 17536883A JP 17536883 A JP17536883 A JP 17536883A JP S6066890 A JPS6066890 A JP S6066890A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- cladding layer
- conductivity type
- laser
- stripe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000005253 cladding Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 4
- 201000009310 astigmatism Diseases 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 13
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 125000005842 heteroatom Chemical group 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 10
- 230000000903 blocking effect Effects 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 241000218645 Cedrus Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- OOYGSFOGFJDDHP-KMCOLRRFSA-N kanamycin A sulfate Chemical group OS(O)(=O)=O.O[C@@H]1[C@@H](O)[C@H](O)[C@@H](CN)O[C@@H]1O[C@H]1[C@H](O)[C@@H](O[C@@H]2[C@@H]([C@@H](N)[C@H](O)[C@@H](CO)O2)O)[C@H](N)C[C@@H]1N OOYGSFOGFJDDHP-KMCOLRRFSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17536883A JPS6066890A (ja) | 1983-09-22 | 1983-09-22 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17536883A JPS6066890A (ja) | 1983-09-22 | 1983-09-22 | 半導体レ−ザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6066890A true JPS6066890A (ja) | 1985-04-17 |
| JPS641952B2 JPS641952B2 (enrdf_load_stackoverflow) | 1989-01-13 |
Family
ID=15994866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17536883A Granted JPS6066890A (ja) | 1983-09-22 | 1983-09-22 | 半導体レ−ザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6066890A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63170985A (ja) * | 1987-01-09 | 1988-07-14 | Hitachi Ltd | 半導体レーザ素子 |
| JPH02178985A (ja) * | 1988-12-29 | 1990-07-11 | Sharp Corp | 半導体レーザ素子 |
| JPH02178986A (ja) * | 1988-12-29 | 1990-07-11 | Sharp Corp | 半導体レーザ素子 |
| USRE34297E (en) * | 1988-06-08 | 1993-06-29 | Copeland Corporation | Refrigeration compressor |
| US7005680B2 (en) | 2000-11-01 | 2006-02-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members |
-
1983
- 1983-09-22 JP JP17536883A patent/JPS6066890A/ja active Granted
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63170985A (ja) * | 1987-01-09 | 1988-07-14 | Hitachi Ltd | 半導体レーザ素子 |
| USRE34297E (en) * | 1988-06-08 | 1993-06-29 | Copeland Corporation | Refrigeration compressor |
| USRE37019E1 (en) | 1988-06-08 | 2001-01-16 | Copeland Corporation | Refrigeration compressor |
| JPH02178985A (ja) * | 1988-12-29 | 1990-07-11 | Sharp Corp | 半導体レーザ素子 |
| JPH02178986A (ja) * | 1988-12-29 | 1990-07-11 | Sharp Corp | 半導体レーザ素子 |
| US7005680B2 (en) | 2000-11-01 | 2006-02-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS641952B2 (enrdf_load_stackoverflow) | 1989-01-13 |
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