JPS6066890A - 半導体レ−ザ装置 - Google Patents

半導体レ−ザ装置

Info

Publication number
JPS6066890A
JPS6066890A JP17536883A JP17536883A JPS6066890A JP S6066890 A JPS6066890 A JP S6066890A JP 17536883 A JP17536883 A JP 17536883A JP 17536883 A JP17536883 A JP 17536883A JP S6066890 A JPS6066890 A JP S6066890A
Authority
JP
Japan
Prior art keywords
layer
cladding layer
laser
refractive index
cladding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17536883A
Other languages
English (en)
Japanese (ja)
Other versions
JPS641952B2 (enrdf_load_stackoverflow
Inventor
Naohiro Shimada
島田　直弘
Naoto Mogi
茂木　直人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17536883A priority Critical patent/JPS6066890A/ja
Publication of JPS6066890A publication Critical patent/JPS6066890A/ja
Publication of JPS641952B2 publication Critical patent/JPS641952B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Semiconductor Lasers (AREA)
JP17536883A 1983-09-22 1983-09-22 半導体レ−ザ装置 Granted JPS6066890A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17536883A JPS6066890A (ja) 1983-09-22 1983-09-22 半導体レ−ザ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17536883A JPS6066890A (ja) 1983-09-22 1983-09-22 半導体レ−ザ装置

Publications (2)

Publication Number Publication Date
JPS6066890A true JPS6066890A (ja) 1985-04-17
JPS641952B2 JPS641952B2 (enrdf_load_stackoverflow) 1989-01-13

Family

ID=15994866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17536883A Granted JPS6066890A (ja) 1983-09-22 1983-09-22 半導体レ−ザ装置

Country Status (1)

Country Link
JP (1) JPS6066890A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170985A (ja) * 1987-01-09 1988-07-14 Hitachi Ltd 半導体レーザ素子
JPH02178986A (ja) * 1988-12-29 1990-07-11 Sharp Corp 半導体レーザ素子
JPH02178985A (ja) * 1988-12-29 1990-07-11 Sharp Corp 半導体レーザ素子
USRE34297E (en) * 1988-06-08 1993-06-29 Copeland Corporation Refrigeration compressor
US7005680B2 (en) 2000-11-01 2006-02-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170985A (ja) * 1987-01-09 1988-07-14 Hitachi Ltd 半導体レーザ素子
USRE34297E (en) * 1988-06-08 1993-06-29 Copeland Corporation Refrigeration compressor
USRE37019E1 (en) 1988-06-08 2001-01-16 Copeland Corporation Refrigeration compressor
JPH02178986A (ja) * 1988-12-29 1990-07-11 Sharp Corp 半導体レーザ素子
JPH02178985A (ja) * 1988-12-29 1990-07-11 Sharp Corp 半導体レーザ素子
US7005680B2 (en) 2000-11-01 2006-02-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device including a divided electrode having a plurality of spaced apart conductive members

Also Published As

Publication number Publication date
JPS641952B2 (enrdf_load_stackoverflow) 1989-01-13

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