JPS6066424A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS6066424A JPS6066424A JP17530883A JP17530883A JPS6066424A JP S6066424 A JPS6066424 A JP S6066424A JP 17530883 A JP17530883 A JP 17530883A JP 17530883 A JP17530883 A JP 17530883A JP S6066424 A JPS6066424 A JP S6066424A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- photo
- semiconductor substrate
- photoresist
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 22
- 238000005468 ion implantation Methods 0.000 claims abstract description 21
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229920002120 photoresistant polymer Polymers 0.000 claims description 40
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000010 aprotic solvent Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 4
- DMSZORWOGDLWGN-UHFFFAOYSA-N ctk1a3526 Chemical compound NP(N)(N)=O DMSZORWOGDLWGN-UHFFFAOYSA-N 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 14
- 239000002904 solvent Substances 0.000 abstract description 5
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 238000007598 dipping method Methods 0.000 abstract 2
- -1 Silicon ions Chemical class 0.000 abstract 1
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体装置の製造工程における１選択イオン
注入後のポジ型フォトレジストの除去に用いることので
きる半導体装置の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a semiconductor device that can be used to remove positive photoresist after selective ion implantation in the manufacturing process of a semiconductor device.
従来例の構成とその問題点
近年、半導体装置のｐ型もしくはｎ型領域を作製する方
法として、イオン注入が用いられてきている。以下図を
を参照しながら従来の半導体装置の製造方法について説
明する。第１図（ａ） 、 （ｂ） 、 （Ｃ）。Conventional Structures and Their Problems In recent years, ion implantation has been used as a method for manufacturing p-type or n-type regions of semiconductor devices. A conventional method for manufacturing a semiconductor device will be described below with reference to the drawings. Figure 1 (a), (b), (C).
（ｄ）は、従来の半導体装置の製造方法の工程断面図で
あり、１は半導体基板、２は注入イオン３に対する選択
マスクとなるフォトレジスト。２ａはフォトレジスト残
渣。４は注入イオン３による半導体基板活性部である。(d) is a process cross-sectional view of a conventional method for manufacturing a semiconductor device, in which 1 is a semiconductor substrate, 2 is a photoresist serving as a selective mask for implanted ions 3; 2a is photoresist residue. Reference numeral 4 denotes an active region of the semiconductor substrate formed by the implanted ions 3.
以上のように構成された半導体装置の製造方法について
以下に説明する。A method of manufacturing the semiconductor device configured as above will be described below.
前記イオン？ＩＥ入ｔよ、Ｊ’）’ｒ’Ｊ２の不純物を
イオン化し。Said ion? Enter IE and ionize the impurities in J')'r'J2.
イオン加速器を用いて半導体基板に杓込みその後の熱処
理にＪニジ前記不純物を活性化し、ｐ型もしくはｎ型半
導体を得るものである。ところで、前記イオン注入は、
しばしば半導体の集積化のため。The impurity is poured into a semiconductor substrate using an ion accelerator and then subjected to heat treatment to activate the impurity to obtain a p-type or n-type semiconductor. By the way, the ion implantation is
Often for semiconductor integration.
同一半導体基板内に異種もしくは注入量の異なった不純
物の注入が必要となるため、半導体基板１上の７オトレ
ジスト２をマスクとして、注入イオン３の選択イオン注
入が行なわれる（第１図（ａ））。Since it is necessary to implant different types of impurities or different amounts of impurities into the same semiconductor substrate, selective ion implantation of implanted ions 3 is performed using the photoresist 2 on the semiconductor substrate 1 as a mask (see FIG. 1(a)). ).
前記選択イオン注入により半導体基板１に、半導体基板
活性部４が作製される（第１図（ｂ））。次に、前記選
択イオン注入の後、マスクとして不要となったフォトレ
ジスト２ｆｆ：通常の７第１・レジスト除去剤９例えば
Ｊ−１００（ナガセ化成社製）９ｏ〜１００℃に１０〜
１６分浸漬し、大部分のフォトレジスト２を除去する。A semiconductor substrate active region 4 is formed in the semiconductor substrate 1 by the selective ion implantation (FIG. 1(b)). Next, after the selective ion implantation, the photoresist that is no longer needed as a mask 2ff: Ordinary 7 1st resist remover 9 For example, J-100 (manufactured by Nagase Kasei Co., Ltd.) 9 o - 100 ° C.
After soaking for 16 minutes, most of the photoresist 2 is removed.
しかし５前記フオトレジスト２自身がマスクとしてイオ
ン注入されているため硬化し、前記のフォトレジスト除
去剤だけでは、前記フォートレジストが除去しきれず、
フォトレジスト残渣２ａが残存する（第１（２）（Ｃ）
）。However, since the photoresist 2 itself is ion-implanted as a mask, it hardens, and the photoresist cannot be completely removed with the photoresist remover alone.
Photoresist residue 2a remains (1st (2) (C)
).
よって次にトリクロロエタンもしくはアセトンなどのイ
イ機溶媒中で１選択イオン注入後の半導体基板をラビン
グし、前記フォトレジスト残渣を除去する方法がとられ
る（第１図（ｄ））。Therefore, next, a method is used in which the semiconductor substrate after selective ion implantation is rubbed in a suitable solvent such as trichloroethane or acetone to remove the photoresist residue (FIG. 1(d)).
しかしながら、前記のような方法においては。However, in the method as described above.
ラビングという機械的操作により、前記半導体基板が破
損する危険性は危れす、これが歩留り低下の一因となる
という問題点を有していた。The mechanical operation called rubbing poses a problem in that there is a risk that the semiconductor substrate may be damaged, which is a cause of a decrease in yield.
発明の目的
本発明の目的は、選択イオン注入後の７オトレジストヲ
ラビング等の機械的操作を用いずに除去し、もって半導
体基板の破損の危険性を減じ、歩留りの向上を可能とす
る半導体装置の製造方法を提供することである。OBJECTS OF THE INVENTION An object of the present invention is to provide a semiconductor substrate that can be removed without mechanical operations such as rubbing after selective ion implantation, thereby reducing the risk of damage to the semiconductor substrate and improving yield. An object of the present invention is to provide a method for manufacturing a device.
発明の構成
本発明の半導体装置の製造方法は、半導体基板に、ポジ
型フォトレジストをパターニングする工程と、前記ポジ
型フォトレジストをマスクとし選択イオン注入する工程
と、前記選択イオン注入の後、前記フォトレジストの除
去に際し双極子能率の高い非プロトン性溶媒を用いる工
程とを含むように構成したものであり、これにより、前
記選択イオン注入後の前記ポジ型フォトレジス）ｋラビ
ング等の機械的操作を行なうことなしに除去し、もって
半導体基板の破損の危険性を減じ、歩留りの向上となる
ものである。Structure of the Invention A method for manufacturing a semiconductor device according to the present invention includes a step of patterning a positive photoresist on a semiconductor substrate, a step of selectively implanting ions using the positive photoresist as a mask, and a step of performing the selective ion implantation after the selective ion implantation. The method is configured to include a step of using an aprotic solvent with a high dipole efficiency when removing the photoresist, and thereby, the positive photoresist after the selective ion implantation is removed by mechanical operations such as rubbing. This method reduces the risk of damage to the semiconductor substrate and improves yield.
実施例の説明
以下本発明の一実施例について５図面を参照しながら説
明する。DESCRIPTION OF EMBODIMENTS An embodiment of the present invention will be described below with reference to five drawings.
第２図（ａ） 、 （ｂ） 、 （Ｃ） 、 （ｄ）は
本発明の一実施例におけるフォトレジストの除去方法の
工程断面図を示すものである。第１図において１は半導
体基板。FIGS. 2(a), (b), (C), and (d) show process cross-sectional views of a method for removing photoresist in an embodiment of the present invention. In FIG. 1, 1 is a semiconductor substrate.
２１は、注入イオン３に対する選択マスクとなるポジ型
フォトレジスト、２１ａはフォトレジスト残渣、４は注
入イオン３による半導体基板活性部である。21 is a positive photoresist serving as a selective mask for the implanted ions 3; 21a is a photoresist residue; and 4 is an active part of the semiconductor substrate formed by the implanted ions 3.
以上のように構成された本実施例の半導体装置の製造方
法について以下に説明する。まず、半導体基板１の表面
にポジ型フォトレジストトシて０ＦＰＲ−８００（東京
応化工業社製）を塗布し、所要のパターニングを行ない
、注入イオン３に対する。膜厚が１μｍのマスクとする
。次に、注入イオン３として、シリコンを加速電圧１５
０ＫｅＶ注入量Ｉ Ｘ １０ ｄｏｓ＠Ａ４とし、選択
イオン注入を行なう（第２１区ｆａ）鳥前記選択イオン
注入により、半導体基板１に半導体基板活性部４が作製
さｈ λ １＊ ウＩツｌ ｂ ｌ １に’ ｌｆ−ｇ
：５渭１マ 、−Ｌ ｒ７．・５ リ １゜２１０つ
いた半導体基板１を、双極子能率の高い非プロトン性溶
媒であるジメチルポルムアミド（以下ＤＭＦ と略す］
約９ｏ℃に１０分間浸漬することにより、ポジ型７オト
レジスト２１はほとんど溶出する（第２図（Ｃ））。さ
らに、従来のフォトレジスト除去方法であるフォトレジ
スト除去剤Ｊ−１ｏｏ約９０℃に１０〜１６分浸漬する
ことにより、フォトレジスト残渣２１ａは簡単に除去さ
れる（第１０（Ｃ））。A method of manufacturing the semiconductor device of this embodiment configured as described above will be described below. First, a positive photoresist 0FPR-800 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied to the surface of the semiconductor substrate 1, and the required patterning is performed to form the implanted ions 3. The mask has a film thickness of 1 μm. Next, as implanted ions 3, silicon is accelerated at a voltage of 15
Selective ion implantation is performed with an implantation dose of 0 KeV I x 10 dos@A4 (section 21 fa) By the selective ion implantation, a semiconductor substrate active region 4 is created in the semiconductor substrate 1. l 1 to' lf-g
:5渭1ま、-L r7.・5 The semiconductor substrate 1 with a 1°210 diameter is heated with dimethylpolamide (hereinafter abbreviated as DMF), which is an aprotic solvent with high dipole efficiency.
By immersing it at about 9° C. for 10 minutes, most of the positive type 7 photoresist 21 is eluted (FIG. 2(C)). Further, the photoresist residue 21a is easily removed by immersing the photoresist remover J-1oo in about 90° C. for 10 to 16 minutes, which is a conventional photoresist removal method (No. 10 (C)).
次に、前記の一実施例で述べたフォトレジストの除去方
法において、双極子能率の高い非プロトン性溶媒として
、ジメチルスルホキシド（以下ＤＭＳＯと略す２および
ヘキサメチルホスホルアミド（以下ＨＭＰＡと１略すン
を用いた場合、さらに、その他の溶媒としてテトラヒド
ロフラン（以下ＴＨＦと略す］、アセト／、酢酸−ｎブ
チル。Next, in the photoresist removal method described in the above example, dimethyl sulfoxide (hereinafter abbreviated as DMSO) and hexamethylphosphoramide (hereinafter abbreviated as HMPA) are used as aprotic solvents with high dipole efficiency. In addition, other solvents include tetrahydrofuran (hereinafter abbreviated as THF), acetate/n-butyl acetate.
メチルセロソルブ（以下Ｍｅ−Ｃｅｎｎと略す）、メチ
ルエチルケトン（以下ＭＥＫと略す）ならびにトリクロ
ルエチレン（以下トリクレンと略す）を用いた場合の７
オトレジスト除去のｊｆ！ｉｊＢ ＆裏ｆ※なお表には
、前記の一実施例で述べたＤＭＦについても併記し、ま
た比較のため、従来例としての１−１ｏｏ のみを用い
た場合も記載した。7 when using methyl cellosolve (hereinafter abbreviated as Me-Cenn), methyl ethyl ketone (hereinafter abbreviated as MEK) and trichlorethylene (hereinafter abbreviated as trichlene)
Otoresist removal jf! ijB & Back f *The front also shows the DMF described in the above example, and also shows the case where only 1-1oo as a conventional example is used for comparison.
前記表は、各溶媒の比較項目として、イオン注入後のマ
スクとなったポジ型フォトレジストの溶解能、ラビング
の不要性、最終的なレジスト除去の可・不可を、それぞ
れの優位性により、○、△。The table above shows the ability to dissolve the positive photoresist that served as a mask after ion implantation, the necessity of rubbing, and whether or not the final resist can be removed, as comparison items for each solvent, depending on the superiority of each solvent. ,△.
×の順に表わしたものである。They are expressed in the order of ×.
前記表に示すように、前記一実施例で示したＤＭＦの他
に、ＤＭＳＯおよびＨＭＰＡ といった双極子能率の高
い非プロトン性溶媒が、選択イオン注入後のフォトレジ
スト除去に用いることができる。また、ＴＨＦ 、Ｍｅ
−ＣｅＩｌ、ｆｌ 、ＭＥＫについては、イオン注入
後のポジ型フォトレジスト溶解能が小さくラビングを行
なってもレジストを除去することはできなかった。（表
中、レジスト除去の項に×で示す）
なお、前記一実施例では、ＤＭＦでポジ型フォトレジス
トを溶出した後、従来例のｌ−１００を用いたが、ＤＭ
Ｆだけで充分に前記ポジ型フォトレジストが除去された
場合には、Ｏ１■述の■−１００の使用が必要ないこと
勿論である。As shown in the table above, in addition to DMF shown in the above example, aprotic solvents with high dipole efficiency such as DMSO and HMPA can be used to remove the photoresist after selective ion implantation. Also, THF, Me
-CeIl, fl, and MEK had a low ability to dissolve the positive photoresist after ion implantation, and the resist could not be removed even by rubbing. (In the table, the column for resist removal is indicated by an x.) In the above example, after eluting the positive photoresist with DMF, the conventional l-100 was used.
Of course, if the positive photoresist is sufficiently removed by F alone, there is no need to use -100 mentioned in O1.
発明の効果
以上の説明から明らかなように１本発明は半導体基板に
ポジ型フォトレジスｔｆパターニングする工程と、前記
ポジ型フォトレジストヲマスクとし選択イオン注入する
工程と、前記選択イオン注入の後、前記フォトレジスト
の除去に際し、双極子能率の高い非プロトン性溶媒を用
いる工程とを含む方法であるので、前記選択イオン注入
後の前記ポジ型フォトレジストヲ、ラビング等の機械的
操作を行なうことなしに除去し、もって半導体基板の破
損の危険性を減じ、歩留りの向−Ｌにつながるという効
果が得られる。Effects of the Invention As is clear from the above description, one aspect of the present invention includes a step of patterning a positive photoresist TF on a semiconductor substrate, a step of selectively implanting ions using the positive photoresist as a mask, and after the selective ion implantation. Since this method includes a step of using an aprotic solvent with high dipole efficiency when removing the photoresist, there is no need to perform mechanical operations such as rubbing on the positive photoresist after the selective ion implantation. This has the effect of reducing the risk of damage to the semiconductor substrate and improving yield.
第１図（ａ） 、 （ｂ） 、 （Ｃ） 、 （ｄ）は
、従来のラビングの工程ヶ含む半導体装置の製造方法の
工程断面図、第２図（ａ） 、 （ｂ） 、 （Ｃ）
、 （ｄ）は本発明の一実施例における半導体装置の製
造方法の工程断面図である。
１・・・・・半導体基板、２・・・−・・・フォトレジ
ス）、２ａ・・・・・フォトレジスト残渣、３・・・・
・・注入イオン、４・・・・・・半導体基板活性部、２
１・・・・・・ポジ型フォトレジスト、２１ａ・・・・
・・ポジ型フォトレジスト残渣。
代理人の氏名 弁理士 中 尾 敏 男 を１か１基筒
１ 図FIGS. 1(a), (b), (C), and (d) are process cross-sectional views of a semiconductor device manufacturing method including a conventional rubbing process, and FIGS. 2(a), (b), and (C )
, (d) are process cross-sectional views of a method for manufacturing a semiconductor device in an embodiment of the present invention. 1...Semiconductor substrate, 2...-...Photoresist), 2a...Photoresist residue, 3...
...Implanted ions, 4...Semiconductor substrate active region, 2
1...Positive photoresist, 21a...
...Positive photoresist residue. Name of agent: Patent attorney Toshio Nakao 1 or 1 figure 1
Claims (2)
ーニングする工程と、前記ポジ型フォトレジストをマス
クとし、選択イオン注入をする工程と、前記選択イオン
注入の後、前記ポジ型フォトレジストの除去に際し、双
極子能率の高い非プロトン性溶媒を用いる工程とを含む
ことを特徴とした半導体装置の製造方法。(1) A step of patterning a positive photoresist on a semiconductor substrate, a step of performing selective ion implantation using the positive photoresist as a mask, and a step of removing the positive photoresist after the selective ion implantation. A method for manufacturing a semiconductor device, comprising: a step of using an aprotic solvent with high dipole efficiency.
ホルムアミド、ジメチルスルホキシド、または、ヘキザ
メヂルポスホルアミドである’Ｉ’Ｊ” ｉｔ’ｌ山°
ｌ求の範囲第１項記載の半導体装置の製造方法。(2) 'I'J'it'l mountain where the aprotic solvent with high dipole efficiency is dimethylformamide, dimethyl sulfoxide, or hexamedyl phosphoramide.
1. A method for manufacturing a semiconductor device according to item 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17530883A JPS6066424A (en) | 1983-09-22 | 1983-09-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17530883A JPS6066424A (en) | 1983-09-22 | 1983-09-22 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6066424A true JPS6066424A (en) | 1985-04-16 |
Family
ID=15993820
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17530883A Pending JPS6066424A (en) | 1983-09-22 | 1983-09-22 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6066424A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63159849A (en) * | 1986-12-24 | 1988-07-02 | Asahi Chem Ind Co Ltd | Photoresist release agent composition |
| JPS63163457A (en) * | 1986-12-26 | 1988-07-06 | Asahi Chem Ind Co Ltd | Peeling composition for photoresist |
| JPS63168651A (en) * | 1987-01-06 | 1988-07-12 | Asahi Chem Ind Co Ltd | Stripping agent composition for photoresist |
| JPS6442653A (en) * | 1987-08-10 | 1989-02-14 | Tokyo Ohka Kogyo Co Ltd | Peeling solution for positive type photoresist |
| JPS6481950A (en) * | 1987-09-25 | 1989-03-28 | Asahi Chemical Ind | Agent for peeling photoresist |
| JPS6481949A (en) * | 1987-09-25 | 1989-03-28 | Asahi Chemical Ind | Agent for peeling photoresist |
| JPH04133062A (en) * | 1990-09-25 | 1992-05-07 | Toray Ind Inc | Developer for photosensitive polyimide |
| JPH0593157A (en) * | 1991-07-01 | 1993-04-16 | Nissan Motor Co Ltd | Method of stripping resin coating and method of post-treatment |
| WO2008152907A1 (en) * | 2007-06-12 | 2008-12-18 | Toagosei Co., Ltd. | Agent for stripping resist film on electroconductive polymer, method for stripping resist film, and substrate with patterned electroconductive polymer |
| WO2010058778A1 (en) | 2008-11-19 | 2010-05-27 | 東亞合成株式会社 | Method for producing substrate having patterned conductive polymer film and substrate having patterned conductive polymer film |
-
1983
- 1983-09-22 JP JP17530883A patent/JPS6066424A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63159849A (en) * | 1986-12-24 | 1988-07-02 | Asahi Chem Ind Co Ltd | Photoresist release agent composition |
| JPS63163457A (en) * | 1986-12-26 | 1988-07-06 | Asahi Chem Ind Co Ltd | Peeling composition for photoresist |
| JPS63168651A (en) * | 1987-01-06 | 1988-07-12 | Asahi Chem Ind Co Ltd | Stripping agent composition for photoresist |
| JPS6442653A (en) * | 1987-08-10 | 1989-02-14 | Tokyo Ohka Kogyo Co Ltd | Peeling solution for positive type photoresist |
| JPS6481950A (en) * | 1987-09-25 | 1989-03-28 | Asahi Chemical Ind | Agent for peeling photoresist |
| JPS6481949A (en) * | 1987-09-25 | 1989-03-28 | Asahi Chemical Ind | Agent for peeling photoresist |
| JPH04133062A (en) * | 1990-09-25 | 1992-05-07 | Toray Ind Inc | Developer for photosensitive polyimide |
| JPH0593157A (en) * | 1991-07-01 | 1993-04-16 | Nissan Motor Co Ltd | Method of stripping resin coating and method of post-treatment |
| WO2008152907A1 (en) * | 2007-06-12 | 2008-12-18 | Toagosei Co., Ltd. | Agent for stripping resist film on electroconductive polymer, method for stripping resist film, and substrate with patterned electroconductive polymer |
| JPWO2008152907A1 (en) * | 2007-06-12 | 2010-08-26 | 東亞合成株式会社 | Resist film stripper on conductive polymer, resist film stripping method, and substrate having patterned conductive polymer |
| WO2010058778A1 (en) | 2008-11-19 | 2010-05-27 | 東亞合成株式会社 | Method for producing substrate having patterned conductive polymer film and substrate having patterned conductive polymer film |
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