JPS6065528A - ｐｎ接合形成法 - Google Patents

ｐｎ接合形成法

Info

Publication number
JPS6065528A
JPS6065528A JP58172987A JP17298783A JPS6065528A JP S6065528 A JPS6065528 A JP S6065528A JP 58172987 A JP58172987 A JP 58172987A JP 17298783 A JP17298783 A JP 17298783A JP S6065528 A JPS6065528 A JP S6065528A
Authority
JP
Japan
Prior art keywords
voc
annealing
mass separation
implantation
implant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58172987A
Other languages
English (en)
Japanese (ja)
Inventor
Haruo Ito
晴夫 伊藤
Tadashi Saito
忠 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58172987A priority Critical patent/JPS6065528A/ja
Priority to FR848414336A priority patent/FR2552265B1/fr
Priority to DE19843434552 priority patent/DE3434552A1/de
Publication of JPS6065528A publication Critical patent/JPS6065528A/ja
Pending legal-status Critical Current

Links

Classifications

    • H10P14/6309—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H10P14/6322—
    • H10P30/204—
    • H10P30/21—
    • H10P30/225—
    • H10P32/1204—
    • H10P95/90—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photovoltaic Devices (AREA)
JP58172987A 1983-09-21 1983-09-21 ｐｎ接合形成法 Pending JPS6065528A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58172987A JPS6065528A (ja) 1983-09-21 1983-09-21 ｐｎ接合形成法
FR848414336A FR2552265B1 (fr) 1983-09-21 1984-09-19 Procede de formation d'une jonction pn
DE19843434552 DE3434552A1 (de) 1983-09-21 1984-09-20 Verfahren zur bildung einer pn-grenzschicht

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172987A JPS6065528A (ja) 1983-09-21 1983-09-21 ｐｎ接合形成法

Publications (1)

Publication Number Publication Date
JPS6065528A true JPS6065528A (ja) 1985-04-15

Family

ID=15952071

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58172987A Pending JPS6065528A (ja) 1983-09-21 1983-09-21 ｐｎ接合形成法

Country Status (3)

Country Link
JP (1) JPS6065528A (enExample)
DE (1) DE3434552A1 (enExample)
FR (1) FR2552265B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3727825A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschichtsolarmodul aus kristallinem silizium
DE3727826A1 (de) * 1987-08-20 1989-03-02 Siemens Ag Serienverschaltetes duennschicht-solarmodul aus kristallinem silizium
US6982215B1 (en) * 1998-11-05 2006-01-03 Chartered Semiconductor Manufacturing Ltd. N type impurity doping using implantation of P2+ ions or As2+ Ions
KR101832230B1 (ko) * 2012-03-05 2018-04-13 엘지전자 주식회사 태양 전지 및 이의 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915377B1 (enExample) * 1968-10-04 1974-04-15

Also Published As

Publication number Publication date
DE3434552C2 (enExample) 1989-10-19
DE3434552A1 (de) 1985-04-11
FR2552265B1 (fr) 1990-02-02
FR2552265A1 (fr) 1985-03-22

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