JPS6063958U - optical sensor element - Google Patents
optical sensor elementInfo
- Publication number
- JPS6063958U JPS6063958U JP15542583U JP15542583U JPS6063958U JP S6063958 U JPS6063958 U JP S6063958U JP 15542583 U JP15542583 U JP 15542583U JP 15542583 U JP15542583 U JP 15542583U JP S6063958 U JPS6063958 U JP S6063958U
- Authority
- JP
- Japan
- Prior art keywords
- electrode film
- conductivity type
- silicon layer
- amorphous silicon
- optical sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図及び第２図は従来の光センサ素子を説明するため
の略図的断面図、第３図は本考案の光センサ素子の一実
施例を示す略図的断面図、第４図は本考案及び従来の光
センサ素子の特性を比較説明するための電圧−電流特性
曲線図である。
１．１０・・・・・・絶縁透明電極、２，１１・・・・
・・第一電極膜（又は第一電極）、３，１２・・・・・
・第一導電型非晶質シリコン層、４，１３・・・・・・
ｉ型非晶質シリコン層、５，１４・・・・・・第二導電
型非晶質シリコン層、６，７．１５・・・・・・第二電
極膜（又は第二電極）。1 and 2 are schematic sectional views for explaining a conventional optical sensor element, FIG. 3 is a schematic sectional view showing an embodiment of the optical sensor element of the present invention, and FIG. 4 is a schematic sectional view for explaining a conventional optical sensor element. FIG. 3 is a voltage-current characteristic curve diagram for comparing and explaining the characteristics of the conventional optical sensor element. 1.10...Insulated transparent electrode, 2,11...
...First electrode film (or first electrode), 3, 12...
・First conductivity type amorphous silicon layer, 4, 13...
i-type amorphous silicon layer, 5, 14... second conductivity type amorphous silicon layer, 6, 7.15... second electrode film (or second electrode).
Claims (1)
第−電極膜上に順次に設けられた第一導電型、ｉ型及び
第二導電型非晶質シリコン層と、該第二導電型非晶質シ
リコン層上に設けられた複数個の個別の第二電極膜とを
具え、前記第一電極膜と第二電極膜との間に光センサ部
を形成してなる光センサ素子において、前記第二導電型
非晶質シリコン層を前記第二電極膜に関連して互いに電
気的に分離された島状領域とし、前記第−導電型及びｉ
型シリコン層を各センサ部に共通な領域として成ること
を特徴とする光センサ素子。a transparent first electrode film provided on an insulating transparent substrate; first conductivity type, i-type, and second conductivity type amorphous silicon layers provided sequentially on the second electrode film; A photosensor comprising a plurality of individual second electrode films provided on a biconductive type amorphous silicon layer, and a photosensor section is formed between the first electrode film and the second electrode film. In the device, the second conductivity type amorphous silicon layer is an island-like region electrically isolated from each other in relation to the second electrode film, and the second conductivity type and i
An optical sensor element characterized in that a molded silicon layer is formed as a common area for each sensor section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15542583U JPS6063958U (en) | 1983-10-06 | 1983-10-06 | optical sensor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15542583U JPS6063958U (en) | 1983-10-06 | 1983-10-06 | optical sensor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6063958U true JPS6063958U (en) | 1985-05-07 |
Family
ID=30343276
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15542583U Pending JPS6063958U (en) | 1983-10-06 | 1983-10-06 | optical sensor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6063958U (en) |
-
1983
- 1983-10-06 JP JP15542583U patent/JPS6063958U/en active Pending
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