JPS6058646A - Hybrid integrated circuit - Google Patents

Hybrid integrated circuit

Info

Publication number
JPS6058646A
JPS6058646A JP16654383A JP16654383A JPS6058646A JP S6058646 A JPS6058646 A JP S6058646A JP 16654383 A JP16654383 A JP 16654383A JP 16654383 A JP16654383 A JP 16654383A JP S6058646 A JPS6058646 A JP S6058646A
Authority
JP
Japan
Prior art keywords
cap
substrate
hybrid integrated
integrated circuit
high frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16654383A
Other languages
Japanese (ja)
Inventor
Takaji Zushi
図師　隆爾
Kazuhiro Matsuzaki
松崎　和博
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP16654383A priority Critical patent/JPS6058646A/en
Publication of JPS6058646A publication Critical patent/JPS6058646A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Abstract

PURPOSE:To obtain the titled device suitable for a high frequency power amplifier by a method wherein the power of electric wave absorption is imparted to at least one of the transmission line containing wirings and terminals and the cap, when the cap is installed in the periphery of a substrate provided with active elements, passive elements and the like. CONSTITUTION:The substrate 1 provided with the wirings 2, terminals 3, a transistor chip 4, capacitor chips 5, etc. is fixed on a heat sink 6 while leads 8 are projected out, and is then sealed by being covered with the cap 7. In this construction, normally the cap 7 is prepared by the use of an electric wave permeable material; however, this manner causes electric waves emitting from the surface of an amplifying circuit to transmit through the cap 7 to outside. If it becomes serious, the action becomes unstable with the easiness of the occurrence of positive feedback in the circuit. Therefore, the power of electric wave absorption is kept provided to one of the transmission line provided on the substrate and the cap 7.

Description

【発明の詳細な説明】 ［発明の技術分野］ この発明は混成集積回路に関し、特に高周波電力増幅回
路に好適な混成集積回路に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a hybrid integrated circuit, and particularly to a hybrid integrated circuit suitable for a high frequency power amplifier circuit.

［発明の技術的背景Ｊ 無線機の送信段に用いられる高周波電力増幅回路は一般
にトランジスタを含む混成集積回路で構成されており、
たとえば第１図のごとき構造を有している。　同図にお
いて、１は配線２及び端子３（もしくはＩ１０パッド）
が形成されている基板であり、該基板１上にはトランジ
スタチップ４やチップコンデンサ５が装着されている。[Technical Background of the Invention J High-frequency power amplifier circuits used in the transmission stage of radio equipment are generally composed of hybrid integrated circuits including transistors,
For example, it has a structure as shown in FIG. In the same figure, 1 is the wiring 2 and terminal 3 (or I10 pad)
A transistor chip 4 and a chip capacitor 5 are mounted on the substrate 1.

　通常アルミナで構成されている基板１の裏面全面にメ
タライズされ、それよりも厚さの厚い銅製のヒートシン
ク６上に装着されている。　基板１上を覆ってプラスチ
ック製のキャップ７がヒートシンク６上に装着され、該
キャップ７の側壁部分の開口を通って電極リード８がキ
ャップ７内の端子３に接続されている。The entire back surface of the substrate 1, which is usually made of alumina, is metallized and is mounted on a thicker copper heat sink 6. A plastic cap 7 is mounted on the heat sink 6 to cover the substrate 1, and an electrode lead 8 is connected to the terminal 3 inside the cap 7 through an opening in a side wall portion of the cap 7.

前記のごとき混成集積回路によって無線機送信段の高周
波電力増幅回路を構成する場合、■できるだけ高い周波
数で安定した動作ができること、■高集積度で多段増幅
ができること等の条件を満たすことが望ましいが、従来
の高周波電力増幅回路用の混成集積回路には以下のごと
き問題点があり、前記のごとき条件を満たす高周波電力
増幅回路を実現することができなかった。When configuring a radio frequency power amplifier circuit for a radio transmission stage using a hybrid integrated circuit such as the one described above, it is desirable to satisfy the following conditions: 1. Stable operation at as high a frequency as possible; 2. High integration and multi-stage amplification. Conventional hybrid integrated circuits for high frequency power amplifier circuits have the following problems, and it has not been possible to realize a high frequency power amplifier circuit that satisfies the above conditions.

［背景技術の問題点］ 第１図のごとき従来の混成集積回路で構成された高周波
電力増幅回路においては、キャップ７が一般に電波透過
材で構成されているため、該増幅回路表面から発生する
電波は該キャップを透過して外界に放射されるが、この
ような外界への電波放射が著しく増大した場合には該増
幅回路で正帰還が起こりやすくなり、その結果、回路の
安定動作が困難になるという欠点があった。　特に基板
１上にリアクタンス素子が設けられていたり、あるいは
（基板の厚さ／高周波実効波長）の値がある所定値以上
（たとえば０．１％以上）であったりする場合には該増
幅回路から発生する電波放射が著しく大きくなるため、
キャップ７の外側への電波放射も著しく増大し、その結
果、該増幅回路の安定動作が一層困難になるという問題
点があった。[Problems in the Background Art] In a high-frequency power amplifier circuit configured with a conventional hybrid integrated circuit as shown in FIG. is transmitted through the cap and radiated to the outside world, but if this radio wave radiation to the outside world increases significantly, positive feedback is likely to occur in the amplifier circuit, and as a result, stable operation of the circuit becomes difficult. There was a drawback. In particular, if a reactance element is provided on the substrate 1, or if the value of (substrate thickness/high frequency effective wavelength) is more than a certain value (for example, 0.1% or more), the amplifier circuit As the radio wave radiation generated increases significantly,
Radio wave radiation to the outside of the cap 7 also increases significantly, resulting in a problem that stable operation of the amplifier circuit becomes even more difficult.

また、高周波電力増幅回路を多段増幅の高集積度混成集
積回路によって構成すると、該キャップ外への電波放射
によって該増幅回路の入出力端子間で正帰還が生じやす
くなり、安定動作を維持できなくなるという問題があり
、それ故、従来の混成集積回路では高い周波数領域で安
定した動作ができる大増幅度の高周波電力増幅回路を突
堤することができなかった。Furthermore, if a high-frequency power amplifier circuit is constructed from a highly integrated hybrid integrated circuit with multi-stage amplification, positive feedback is likely to occur between the input and output terminals of the amplifier circuit due to radio wave radiation outside the cap, making it impossible to maintain stable operation. Because of this problem, conventional hybrid integrated circuits have not been able to provide high-frequency power amplifier circuits with large amplifications that can operate stably in high frequency regions.

それ故、高い周波数領域においても安定に動作する高周
波電力増幅回路を実現するためには配線２の幅と基板材
の誘電率を一定とした場合基板１の厚さをできるかぎり
薄くすることにより（基板の厚さ／高周波実効波長）の
値を小さくし、これにより該増幅回路表面からの電波放
射を抑制するか、あるいはキャップ表面から反射される
電波を抑制するかのいずれかの手段を講する必要がある
が、基板の厚さはその機械的強度をある一定限度以上に
保つ必要性からあまり薄くすることは不可能であった。Therefore, in order to realize a high frequency power amplifier circuit that operates stably even in a high frequency range, if the width of the wiring 2 and the dielectric constant of the substrate material are kept constant, the thickness of the substrate 1 should be made as thin as possible ( Measures are taken to either reduce the value of the substrate thickness/high frequency effective wavelength), thereby suppressing radio wave radiation from the surface of the amplifier circuit, or suppressing radio waves reflected from the cap surface. However, it has been impossible to reduce the thickness of the substrate too much because of the need to maintain its mechanical strength above a certain limit.

　因みに現在一般に用いられている基板の厚さは０，６
３５ｕであり、ヒートシンクと半田（＝Ｉけしだ状態で
の熱衝撃耐性上基板厚さをこの値以下にすることはでき
ない。Incidentally, the thickness of the substrate currently in general use is 0.6
35u, and the board thickness cannot be lower than this value due to thermal shock resistance when the heat sink and solder (=I) are exposed.

［発明の目的］ この発明の目的は、前記のごとき従来の混成集積回路に
存する問題点を解消し、高周波電力増幅回路に好適な改
良された混成集積回路を提供することである。[Object of the Invention] An object of the present invention is to solve the problems of the conventional hybrid integrated circuit as described above and to provide an improved hybrid integrated circuit suitable for a high frequency power amplifier circuit.

［発明の概要］ この発明により構成された混成−集積回路は、基板上に
形成された伝送線路と該基板上に設けられたキャップと
の少なくとも一方が電波吸収能を有していることを特徴
とするものであり、この発明の混成集積回路においては
電波放射が抑制されるため高周波数領域においても正帰
還が生ずることがなく、従って高周波領域でも安定度が
高く且つ大増幅度の高周波電力増幅回路を構成すること
ができる。[Summary of the Invention] The hybrid integrated circuit constructed according to the present invention is characterized in that at least one of the transmission line formed on the substrate and the cap provided on the substrate has radio wave absorption ability. In the hybrid integrated circuit of the present invention, since radio wave radiation is suppressed, positive feedback does not occur even in the high frequency region, and therefore high frequency power amplification with high stability and large amplification even in the high frequency region can be achieved. A circuit can be constructed.

［発明の実施例］ キャップの表面に所望の特性と量のフェライト材を含有
する被覆層を形成したトランジスタ４段構成の混成集積
回路（周波数９００Ｍ　ＨＺ　、入力電力１ｍＷ、出力
電力１０Ｗ１回路基板寸法１９．１１ｉ１ｍｘ５０．８
ｍｍ）を第一の供試体とし、基板上の配線及び端子の表
面にのみ電波吸収材を含有する被覆層を形成したと同じ
トランジスタ４段構成の混成集積回路を第二の供試体と
して、これら二種類の供試体に対して出力電力の５０％
が増幅器に反射するような入ツノを与えて安定動作限界
を調べたところ、両供試体は前記のごとき入力条件にお
いても全く異常発振せずに安定動作することが確認され
た。[Embodiment of the Invention] A hybrid integrated circuit with a four-stage transistor configuration (frequency 900 MHz, input power 1 mW, output power 10 W, circuit board size 19 .11i1mx50.8
mm) was used as the first specimen, and a hybrid integrated circuit with the same four-stage transistor configuration in which a coating layer containing a radio wave absorbing material was formed only on the surface of the wiring and terminals on the board was used as the second specimen. 50% of output power for two types of specimens
When we examined the limits of stable operation by applying an input horn that reflected to the amplifier, we confirmed that both specimens operated stably without any abnormal oscillations even under the input conditions described above.

因みに、従来の混成集積回路では出力電力の２０〜２５
％が電波として反射されるような状態となった時に異常
発振が起こっており、従って本発明による混成集積回路
は従来の混成集積回路にくらべてはるかに高い安定限界
を有していることがわかった。By the way, in conventional hybrid integrated circuits, the output power is 20 to 25
% was reflected as radio waves, abnormal oscillation occurred, and it was therefore found that the hybrid integrated circuit according to the present invention has a much higher stability limit than the conventional hybrid integrated circuit. Ta.

［発明の効果］ 以上に説明したように、この発明の混成集積回路によれ
ば、高い周波数領域でも発振を生ずることなく、安定し
た動作が可能であるとともに従来よりも高集積化された
多段増幅の高周波電力増幅回路を構成することができる
。[Effects of the Invention] As explained above, the hybrid integrated circuit of the present invention is capable of stable operation without oscillation even in high frequency ranges, and is capable of achieving multistage amplification with higher integration than before. A high frequency power amplifier circuit can be constructed.

なお、実施例ではキャップ及び回路の高周波線路の少な
くとも一方に電波吸収材を含有する塗膜を設けることに
よって該キャップ及び該高周波線路に電波吸収能を与え
るようにしているが、キャップの構成相それ自身に電波
吸収材を混入させておいてもよいことは勿論である。In addition, in the embodiment, a coating film containing a radio wave absorbing material is provided on at least one of the cap and the high frequency line of the circuit to impart radio wave absorption ability to the cap and the high frequency line. It goes without saying that a radio wave absorbing material may be mixed therein.

【図面の簡単な説明】[Brief explanation of the drawing]

添付図面は従来の混成集積回路の一例を示す一部破断斜
視図である。 １・・・基板、　２・・・配線、　３・・・端子、　４
・・・トランジスタチップ　５・・・コンデンサチップ
、　６・・・ヒートシンク、　７・・・キャップ。、８
・・・リード。 特許出願人　東京芝浦電気株式会社The accompanying drawing is a partially cutaway perspective view showing an example of a conventional hybrid integrated circuit. 1... Board, 2... Wiring, 3... Terminal, 4
...Transistor chip 5...Capacitor chip, 6...Heat sink, 7...Cap. , 8
...Lead. Patent applicant Tokyo Shibaura Electric Co., Ltd.

Claims (1)

【特許請求の範囲】 １　配線及び端子が形成されている基板と、該基板上に
装着された能動素子チップ及び受動素子チップ等の機能
部品と、該基板上を覆って該基板の周縁部に取り付けら
れたキャップとを有する混成集積回路において、 該配線及び端子を含む伝送線路と該キャップとの少なく
とも一方に電波吸収能を付与したことを特徴とする混成
集積回路。 ２、特許請求の範囲第１項において、該伝送線路と該キ
ャップとの少なくとも一方の表面が電波吸収材を含む膜
等で被覆されていることを特徴とする混成集積回路。[Claims] 1. A substrate on which wiring and terminals are formed, functional components such as active element chips and passive element chips mounted on the substrate, and What is claimed is: 1. A hybrid integrated circuit having a cap attached thereto, wherein at least one of the transmission line including the wiring and the terminal and the cap is provided with radio wave absorbing ability. 2. The hybrid integrated circuit according to claim 1, wherein at least one surface of the transmission line and the cap is coated with a film containing a radio wave absorbing material.
JP16654383A 1983-09-12 1983-09-12 Hybrid integrated circuit Pending JPS6058646A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16654383A JPS6058646A (en) 1983-09-12 1983-09-12 Hybrid integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16654383A JPS6058646A (en) 1983-09-12 1983-09-12 Hybrid integrated circuit

Publications (1)

Publication Number Publication Date
JPS6058646A true JPS6058646A (en) 1985-04-04

Family

ID=15833221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16654383A Pending JPS6058646A (en) 1983-09-12 1983-09-12 Hybrid integrated circuit

Country Status (1)

Country Link
JP (1) JPS6058646A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2740610A1 (en) * 1995-10-26 1997-04-30 Mitsubishi Electric Corp SEMICONDUCTOR DEVICE COMPRISING A POWER DEVICE AND A CONTROL DEVICE FORMED ON MOUNTING FRAMES

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS525587A (en) * 1975-07-02 1977-01-17 Kokusai Denshi Kogyo Kk Infra-red gas analyzer for simultaneous analyzing of carbon,sulphur
JPS52128062A (en) * 1976-04-21 1977-10-27 Mitsubishi Electric Corp Microwave ic
JPS58102545A (en) * 1981-12-15 1983-06-18 Nec Corp Hybrid integrated circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS525587A (en) * 1975-07-02 1977-01-17 Kokusai Denshi Kogyo Kk Infra-red gas analyzer for simultaneous analyzing of carbon,sulphur
JPS52128062A (en) * 1976-04-21 1977-10-27 Mitsubishi Electric Corp Microwave ic
JPS58102545A (en) * 1981-12-15 1983-06-18 Nec Corp Hybrid integrated circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2740610A1 (en) * 1995-10-26 1997-04-30 Mitsubishi Electric Corp SEMICONDUCTOR DEVICE COMPRISING A POWER DEVICE AND A CONTROL DEVICE FORMED ON MOUNTING FRAMES

Similar Documents

Publication Publication Date Title
JPH1126623A (en) Electronic device and manufacture thereof
US8441774B2 (en) Capacitance element, printed circuit board, semiconductor package, and semiconductor circuit
JPH0786460A (en) Semiconductor device
JP2003204244A (en) Saw filter
JP2001185966A (en) Microwave power amplifier
JPS6058646A (en) Hybrid integrated circuit
JP2937948B2 (en) High frequency module and method of manufacturing high frequency module
JP2002184888A (en) Input/output terminal and semiconductor element housing package
JP2001274278A (en) Microwave semiconductor device and its manufacturing method
JP2000183488A (en) Hybrid module
JPS63110756A (en) Package for transistor
JPH08274512A (en) Microwave semiconductor integrated circuit device
JP2000133765A (en) High-frequency integrated circuit device
JP2002198476A (en) Semiconductor device
JP3013845B1 (en) High frequency integrated circuit package
JPH09266394A (en) High frequency semiconductor device
JP2001053508A (en) Mounting structure for high-frequency circuit component
JP3127645B2 (en) Package structure
JP2567211B2 (en) Microwave integrated circuit device
JP4401886B2 (en) High frequency package
JPH06132708A (en) Microwave ic module
JPH118332A (en) Package for microwave device
JP3901458B2 (en) Electronic circuit unit
JPH0685428A (en) Hybrid integrated circuit device
JP2005244539A (en) Monolithic low-noise amplifier