JPS6057632A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6057632A
JPS6057632A JP16555783A JP16555783A JPS6057632A JP S6057632 A JPS6057632 A JP S6057632A JP 16555783 A JP16555783 A JP 16555783A JP 16555783 A JP16555783 A JP 16555783A JP S6057632 A JPS6057632 A JP S6057632A
Authority
JP
Japan
Prior art keywords
film
photoresist film
photosensitized
photo
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16555783A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0410738B2 (enrdf_load_stackoverflow
Inventor
Masahiro Ihara
井原　正弘
Hideaki Nagura
名倉　英明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electronics Corp
Priority to JP16555783A priority Critical patent/JPS6057632A/ja
Publication of JPS6057632A publication Critical patent/JPS6057632A/ja
Publication of JPH0410738B2 publication Critical patent/JPH0410738B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
JP16555783A 1983-09-08 1983-09-08 半導体装置の製造方法 Granted JPS6057632A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16555783A JPS6057632A (ja) 1983-09-08 1983-09-08 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16555783A JPS6057632A (ja) 1983-09-08 1983-09-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6057632A true JPS6057632A (ja) 1985-04-03
JPH0410738B2 JPH0410738B2 (enrdf_load_stackoverflow) 1992-02-26

Family

ID=15814621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16555783A Granted JPS6057632A (ja) 1983-09-08 1983-09-08 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6057632A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0410738B2 (enrdf_load_stackoverflow) 1992-02-26

Similar Documents

Publication Publication Date Title
US4403151A (en) Method of forming patterns
JPS6323657B2 (enrdf_load_stackoverflow)
JPH04115515A (ja) パターン形成方法
JPH0496065A (ja) レチクル
US5885756A (en) Methods of patterning a semiconductor wafer having an active region and a peripheral region, and patterned wafers formed thereby
JPS6222463B2 (enrdf_load_stackoverflow)
JPH04348030A (ja) 傾斜エッチング法
US4581316A (en) Method of forming resist patterns in negative photoresist layer using false pattern
JPS6057632A (ja) 半導体装置の製造方法
EP0104235A4 (en) METHOD OF FORMING A HYBRID LITHOGRAPHIC PROTECTION MATERIAL WITH ELECTRONIC / OPTICAL RADIUS.
JPS62245251A (ja) レジストパタ−ン形成方法
US6372658B1 (en) Reducing contamination induced scumming, for semiconductor device, by ashing
US6309804B1 (en) Reducing contamination induced scumming, for semiconductor device, by acid treatment
JPS6386550A (ja) 多層配線層の形成方法
KR20030000475A (ko) 패턴 형성 방법
JP2712407B2 (ja) ２層フォトレジストを用いた微細パターンの形成方法
KR100220940B1 (ko) 반도체 소자의 미세패턴 제조방법
JPS5828735B2 (ja) ハンドウタイソウチノセイゾウホウホウ
JPS5950053B2 (ja) 写真蝕刻方法
JPS6156867B2 (enrdf_load_stackoverflow)
KR100239435B1 (ko) 반도체 소자의 제조 방법
KR960008568B1 (ko) 반도체 콘텍트 제조방법
KR20030038142A (ko) 레티클 및 이를 이용한 반도체소자의 제조방법
JPH05347244A (ja) レジストパターン形成方法
JPS60106132A (ja) パタ−ン形成方法