JPS605537A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS605537A JPS605537A JP9420384A JP9420384A JPS605537A JP S605537 A JPS605537 A JP S605537A JP 9420384 A JP9420384 A JP 9420384A JP 9420384 A JP9420384 A JP 9420384A JP S605537 A JPS605537 A JP S605537A
- Authority
- JP
- Japan
- Prior art keywords
- monitoring
- oxidized film
- region
- covered
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000012544 monitoring process Methods 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 239000010408 film Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000523 sample Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000010902 straw Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9420384A JPS605537A (ja) | 1984-05-11 | 1984-05-11 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9420384A JPS605537A (ja) | 1984-05-11 | 1984-05-11 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50145473A Division JPS5268376A (en) | 1975-12-05 | 1975-12-05 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS605537A true JPS605537A (ja) | 1985-01-12 |
| JPS6310579B2 JPS6310579B2 (enrdf_load_html_response) | 1988-03-08 |
Family
ID=14103741
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9420384A Granted JPS605537A (ja) | 1984-05-11 | 1984-05-11 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS605537A (enrdf_load_html_response) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63220537A (ja) * | 1987-03-09 | 1988-09-13 | Nec Corp | 半導体基板 |
| US4992850A (en) * | 1989-02-15 | 1991-02-12 | Micron Technology, Inc. | Directly bonded simm module |
| US4992767A (en) * | 1989-02-03 | 1991-02-12 | Hitachi Metals, Ltd. | Magnet roll |
| US4992849A (en) * | 1989-02-15 | 1991-02-12 | Micron Technology, Inc. | Directly bonded board multiple integrated circuit module |
| US5236857A (en) * | 1991-10-30 | 1993-08-17 | Texas Instruments Incorporated | Resistor structure and process |
| USRE36325E (en) * | 1988-09-30 | 1999-10-05 | Micron Technology, Inc. | Directly bonded SIMM module |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS492485A (enrdf_load_html_response) * | 1972-04-19 | 1974-01-10 |
-
1984
- 1984-05-11 JP JP9420384A patent/JPS605537A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS492485A (enrdf_load_html_response) * | 1972-04-19 | 1974-01-10 |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63220537A (ja) * | 1987-03-09 | 1988-09-13 | Nec Corp | 半導体基板 |
| USRE36325E (en) * | 1988-09-30 | 1999-10-05 | Micron Technology, Inc. | Directly bonded SIMM module |
| US4992767A (en) * | 1989-02-03 | 1991-02-12 | Hitachi Metals, Ltd. | Magnet roll |
| US4992850A (en) * | 1989-02-15 | 1991-02-12 | Micron Technology, Inc. | Directly bonded simm module |
| US4992849A (en) * | 1989-02-15 | 1991-02-12 | Micron Technology, Inc. | Directly bonded board multiple integrated circuit module |
| US5236857A (en) * | 1991-10-30 | 1993-08-17 | Texas Instruments Incorporated | Resistor structure and process |
| US5465005A (en) * | 1991-10-30 | 1995-11-07 | Texas Instruments Incorporated | Polysilicon resistor structure including polysilicon contacts |
| US6261915B1 (en) | 1991-10-30 | 2001-07-17 | Texas Instruments Incorporated | Process of making polysilicon resistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6310579B2 (enrdf_load_html_response) | 1988-03-08 |
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