JPS6054447A - ホイ−トストンブリツジ回路による半導体デバイスの評価方法 - Google Patents
ホイ−トストンブリツジ回路による半導体デバイスの評価方法Info
- Publication number
- JPS6054447A JPS6054447A JP58162382A JP16238283A JPS6054447A JP S6054447 A JPS6054447 A JP S6054447A JP 58162382 A JP58162382 A JP 58162382A JP 16238283 A JP16238283 A JP 16238283A JP S6054447 A JPS6054447 A JP S6054447A
- Authority
- JP
- Japan
- Prior art keywords
- bridge circuit
- dif
- pressure sensor
- semiconductor device
- wheatstone bridge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P74/00—
Landscapes
- Measuring Fluid Pressure (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Pressure Sensors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58162382A JPS6054447A (ja) | 1983-09-03 | 1983-09-03 | ホイ−トストンブリツジ回路による半導体デバイスの評価方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58162382A JPS6054447A (ja) | 1983-09-03 | 1983-09-03 | ホイ−トストンブリツジ回路による半導体デバイスの評価方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6054447A true JPS6054447A (ja) | 1985-03-28 |
| JPH0157499B2 JPH0157499B2 (cg-RX-API-DMAC10.html) | 1989-12-06 |
Family
ID=15753513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58162382A Granted JPS6054447A (ja) | 1983-09-03 | 1983-09-03 | ホイ−トストンブリツジ回路による半導体デバイスの評価方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6054447A (cg-RX-API-DMAC10.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001080305A3 (en) * | 2000-04-17 | 2002-03-21 | Univ Texas | Electromigration early failure distribution in submicron interconnects |
-
1983
- 1983-09-03 JP JP58162382A patent/JPS6054447A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001080305A3 (en) * | 2000-04-17 | 2002-03-21 | Univ Texas | Electromigration early failure distribution in submicron interconnects |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0157499B2 (cg-RX-API-DMAC10.html) | 1989-12-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3688581A (en) | Device for correcting the non-linear variation of a signal as a function of a measured magnitude | |
| JP4383597B2 (ja) | 組電池の温度検出装置および温度検出方法 | |
| GB2541482A (en) | Temperature measurement | |
| JP2003098010A (ja) | 電子回路の温度を測定する装置 | |
| JPS582084A (ja) | ホ−ル素子装置 | |
| EP0496147A1 (en) | Method of precise measurement of small resistance values | |
| JPS6054447A (ja) | ホイ−トストンブリツジ回路による半導体デバイスの評価方法 | |
| RU2099722C1 (ru) | Измеритель малых сопротивлений | |
| SU1104440A1 (ru) | Способ измерени сопротивлений и устройство дл его осуществлени | |
| JPH04305168A (ja) | 電気量を誤差補正して測定する方法 | |
| JP2567862B2 (ja) | 抵抗値の測定方法 | |
| US9797958B2 (en) | Monitoring system | |
| SU1076986A1 (ru) | Способ измерени напр жени химического источника тока | |
| CN112858934B (zh) | 用于测试电池传感器的方法、以及电池传感器 | |
| JPS61223622A (ja) | 多温度計測装置 | |
| JPS5918367Y2 (ja) | 充電器の性能試験装置 | |
| SU1247679A1 (ru) | Устройство дл измерени температуры | |
| GB1504130A (en) | Readout means | |
| JPS58122436A (ja) | 電子計算機を用いた高精度自動測温装置 | |
| KR850000355B1 (ko) | 변환기 소자용 온도보상회로 | |
| SU1241170A1 (ru) | Способ поверки измерителей коэффициента нелинейности варисторов | |
| SU428306A1 (ru) | УСТРОЙСТВО ДЛЯ ИЗМЕРЕНИЯ СОПРОТИВЛЕНИЙи^^ШЕ | |
| SU283417A1 (ru) | Способ измерения тока закрытого коллекторного перехода транзистора | |
| SU1177752A1 (ru) | Процентный дифференциальный вольтметр | |
| JPS5811725B2 (ja) | 非直線低抗体素子の劣化検出装置 |