JPS6046996A - 帯状シリコン結晶製造装置 - Google Patents

帯状シリコン結晶製造装置

Info

Publication number
JPS6046996A
JPS6046996A JP15376283A JP15376283A JPS6046996A JP S6046996 A JPS6046996 A JP S6046996A JP 15376283 A JP15376283 A JP 15376283A JP 15376283 A JP15376283 A JP 15376283A JP S6046996 A JPS6046996 A JP S6046996A
Authority
JP
Japan
Prior art keywords
crystal
width
cuts
die
band
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15376283A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6111917B2 (cs
Inventor
Masanaru Abe
阿部　昌匠
Toshiro Matsui
松井　都四郎
Naoaki Maki
真木　直明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP15376283A priority Critical patent/JPS6046996A/ja
Publication of JPS6046996A publication Critical patent/JPS6046996A/ja
Publication of JPS6111917B2 publication Critical patent/JPS6111917B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP15376283A 1983-08-23 1983-08-23 帯状シリコン結晶製造装置 Granted JPS6046996A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15376283A JPS6046996A (ja) 1983-08-23 1983-08-23 帯状シリコン結晶製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15376283A JPS6046996A (ja) 1983-08-23 1983-08-23 帯状シリコン結晶製造装置

Publications (2)

Publication Number Publication Date
JPS6046996A true JPS6046996A (ja) 1985-03-14
JPS6111917B2 JPS6111917B2 (cs) 1986-04-05

Family

ID=15569572

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15376283A Granted JPS6046996A (ja) 1983-08-23 1983-08-23 帯状シリコン結晶製造装置

Country Status (1)

Country Link
JP (1) JPS6046996A (cs)

Also Published As

Publication number Publication date
JPS6111917B2 (cs) 1986-04-05

Similar Documents

Publication Publication Date Title
DE3872290T2 (de) Verfahren zur regelung des kristalldurchmessers.
DE69202996T2 (de) Verfahren zur automatischen Steuerung der Züchtung des Halsteiles eines Einkristalles.
DE10157453A1 (de) Vorrichtung zum Aufwachsen eines einkristallinen Rohlings
DE2633961A1 (de) Verfahren zum zuechten eines duennen kristallbands
US4121965A (en) Method of controlling defect orientation in silicon crystal ribbon growth
JP2705867B2 (ja) シリコン棒の製造方法
US5268061A (en) Method and apparatus for producing a manganese-zinc ferrite single crystal using a local liquid pool formation
JPS6046996A (ja) 帯状シリコン結晶製造装置
US3298795A (en) Process for controlling dendritic crystal growth
US5431124A (en) Rutile single crystals and their growth processes
JP6540583B2 (ja) 単結晶の製造方法および装置
JPS60108399A (ja) 帯状シリコン結晶の製造装置
JPS5914433B2 (ja) 帯状シリコン結晶の製造装置
DE102006052961B4 (de) Verfahren zur Herstellung eines Halbleiterkristalls
JPS6283395A (ja) 単結晶引上装置の直径制御方法
CN110291232B (zh) 用fz法拉制单晶的方法和设备
US20240218556A1 (en) Method, apparatus, system and computer storage medium of controlling crystal growth
JP2617263B2 (ja) マルチドープｆｚ単結晶棒製造方法
JPS55140795A (en) Automatic crystal growing device
US5948159A (en) Method of controlling defects of a silicon single crystal
US4603034A (en) Crystal growing system
JPS5914435B2 (ja) 帯状シリコン結晶の製造装置
DE1619994C3 (de) Verfahren zum Züchten eines stabförmigen, versetzungsfreien Einkristalls aus Silicium durch tieqelfreies Zonenschmelzen
JP2535773B2 (ja) 酸化物単結晶の製造方法とその装置
JPS6129914B2 (cs)