JPS6046995A - シリコン・リボン結晶の製造方法 - Google Patents
シリコン・リボン結晶の製造方法Info
- Publication number
- JPS6046995A JPS6046995A JP15264183A JP15264183A JPS6046995A JP S6046995 A JPS6046995 A JP S6046995A JP 15264183 A JP15264183 A JP 15264183A JP 15264183 A JP15264183 A JP 15264183A JP S6046995 A JPS6046995 A JP S6046995A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- crystal
- ribbon crystal
- silicon ribbon
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15264183A JPS6046995A (ja) | 1983-08-22 | 1983-08-22 | シリコン・リボン結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15264183A JPS6046995A (ja) | 1983-08-22 | 1983-08-22 | シリコン・リボン結晶の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6046995A true JPS6046995A (ja) | 1985-03-14 |
| JPS6111916B2 JPS6111916B2 (enrdf_load_stackoverflow) | 1986-04-05 |
Family
ID=15544842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15264183A Granted JPS6046995A (ja) | 1983-08-22 | 1983-08-22 | シリコン・リボン結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6046995A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002543037A (ja) * | 1999-05-03 | 2002-12-17 | エバーグリーン ソーラー, インコーポレイテッド | 結晶成長のための連続的な溶融物補充 |
| JP2012229134A (ja) * | 2011-04-25 | 2012-11-22 | Fujikura Ltd | 酸化物共晶体の製造方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02134085U (enrdf_load_stackoverflow) * | 1989-04-13 | 1990-11-07 | ||
| JPH0319515U (enrdf_load_stackoverflow) * | 1989-07-10 | 1991-02-26 |
-
1983
- 1983-08-22 JP JP15264183A patent/JPS6046995A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002543037A (ja) * | 1999-05-03 | 2002-12-17 | エバーグリーン ソーラー, インコーポレイテッド | 結晶成長のための連続的な溶融物補充 |
| JP2012229134A (ja) * | 2011-04-25 | 2012-11-22 | Fujikura Ltd | 酸化物共晶体の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6111916B2 (enrdf_load_stackoverflow) | 1986-04-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| LaBelle Jr | EFG, the invention and application to sapphire growth | |
| CN104032368B (zh) | 一种高效多晶硅锭的制备方法 | |
| JP5618318B2 (ja) | 酸化ガリウム単結晶の製造方法及び製造装置 | |
| US4230674A (en) | Crucible-die assemblies for growing crystalline bodies of selected shapes | |
| CN103834994A (zh) | 多晶硅锭及其制备方法和多晶硅片 | |
| JPS6046995A (ja) | シリコン・リボン結晶の製造方法 | |
| JP4863927B2 (ja) | シリコン単結晶引上用石英ガラスルツボおよびそれを使用したシリコン単結晶の製造方法 | |
| US4721688A (en) | Method of growing crystals | |
| CN106835264A (zh) | 一种籽晶夹持器 | |
| JP3668276B2 (ja) | 酸化物単結晶の製造方法および装置 | |
| JPS6111914B2 (enrdf_load_stackoverflow) | ||
| KR20020071412A (ko) | 수직-수평 온도구배를 갖는 대형 결정 육성장치 및 그육성방법 | |
| JP2864058B2 (ja) | シリコン単結晶引上げ用石英ルツボ | |
| JPS5932430B2 (ja) | 帯状シリコン結晶の製造装置 | |
| JP2883910B2 (ja) | 単結晶シリコンの製造方法 | |
| AU2004309149B2 (en) | Device for depositing a polycrystalline silicon layer on a support | |
| JP3183352B2 (ja) | 電磁誘導によるシリコンの連続鋳造方法 | |
| JP2809364B2 (ja) | 四ほう酸リチウム単結晶の製造方法 | |
| JPH0210129Y2 (enrdf_load_stackoverflow) | ||
| CN206494982U (zh) | 一种籽晶夹持器 | |
| JPS6140639B2 (enrdf_load_stackoverflow) | ||
| JP2535773B2 (ja) | 酸化物単結晶の製造方法とその装置 | |
| JPH0154320B2 (enrdf_load_stackoverflow) | ||
| JPS5932436B2 (ja) | 帯状シリコン結晶の成長装置 | |
| JPS5950091A (ja) | 帯状シリコン結晶の製造装置 |