JPS6046674A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPS6046674A
JPS6046674A JP58154309A JP15430983A JPS6046674A JP S6046674 A JPS6046674 A JP S6046674A JP 58154309 A JP58154309 A JP 58154309A JP 15430983 A JP15430983 A JP 15430983A JP S6046674 A JPS6046674 A JP S6046674A
Authority
JP
Japan
Prior art keywords
film
region
section
imaging device
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58154309A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0425756B2 (enrdf_load_stackoverflow
Inventor
Nobuo Suzuki
伸夫 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58154309A priority Critical patent/JPS6046674A/ja
Publication of JPS6046674A publication Critical patent/JPS6046674A/ja
Publication of JPH0425756B2 publication Critical patent/JPH0425756B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP58154309A 1983-08-24 1983-08-24 固体撮像装置 Granted JPS6046674A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58154309A JPS6046674A (ja) 1983-08-24 1983-08-24 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58154309A JPS6046674A (ja) 1983-08-24 1983-08-24 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS6046674A true JPS6046674A (ja) 1985-03-13
JPH0425756B2 JPH0425756B2 (enrdf_load_stackoverflow) 1992-05-01

Family

ID=15581296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58154309A Granted JPS6046674A (ja) 1983-08-24 1983-08-24 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS6046674A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6414955A (en) * 1987-07-08 1989-01-19 Canon Kk Manufacture of photosensor
JPH03169078A (ja) * 1989-11-28 1991-07-22 Nec Corp 固体撮像装置
JP2007027318A (ja) * 2005-07-14 2007-02-01 Fujifilm Holdings Corp 固体撮像装置及び内視鏡

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6414955A (en) * 1987-07-08 1989-01-19 Canon Kk Manufacture of photosensor
JPH03169078A (ja) * 1989-11-28 1991-07-22 Nec Corp 固体撮像装置
JP2007027318A (ja) * 2005-07-14 2007-02-01 Fujifilm Holdings Corp 固体撮像装置及び内視鏡

Also Published As

Publication number Publication date
JPH0425756B2 (enrdf_load_stackoverflow) 1992-05-01

Similar Documents

Publication Publication Date Title
KR100239188B1 (ko) 높은 불순물 농도의 소자분리 영역을 갖는 고체 이미지센서 및 그 제조방법
KR20010082731A (ko) 고체촬상장치
JPH0666452B2 (ja) 固体撮像装置の製造方法
JP2000500296A (ja) 電荷結合素子及びそのような素子を製造する方法
US5246875A (en) Method of making charge coupled device image sensor
JPS6046674A (ja) 固体撮像装置
JPS6344761A (ja) 固体撮像装置の製造方法
JPS6344760A (ja) 固体撮像装置
JPH04263469A (ja) 固体撮像装置
US4502203A (en) Method for fabricating semiconductor photodetector
JPS62190870A (ja) 固体撮像装置およびその製造方法
JPS62145771A (ja) 固体撮像装置
JPH0586669B2 (enrdf_load_stackoverflow)
EP0386211A1 (en) Image sensing device with reduced smear.
JPH04116976A (ja) 固体撮像装置
JP2002324899A (ja) 固体撮像素子の製造方法
JPH06140615A (ja) 固体撮像装置の製造方法
JPS63164270A (ja) 積層型固体撮像装置
JPS5917778A (ja) 固体撮像装置およびその製造方法
JPS63142856A (ja) 固体撮像装置
JPH03190272A (ja) 固体撮像装置
JPS59196667A (ja) 固体撮像装置
JPH01233761A (ja) 固体撮像素子
JPH04245474A (ja) 固体撮像素子
JPH07130975A (ja) 固体撮像素子