JPS6414955A - Manufacture of photosensor - Google Patents

Manufacture of photosensor

Info

Publication number
JPS6414955A
JPS6414955A JP62170673A JP17067387A JPS6414955A JP S6414955 A JPS6414955 A JP S6414955A JP 62170673 A JP62170673 A JP 62170673A JP 17067387 A JP17067387 A JP 17067387A JP S6414955 A JPS6414955 A JP S6414955A
Authority
JP
Japan
Prior art keywords
film
nitride film
etching
plasma nitride
passivation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62170673A
Other languages
Japanese (ja)
Inventor
Hiroshi Yuzurihara
Hidemasa Mizutani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62170673A priority Critical patent/JPS6414955A/en
Publication of JPS6414955A publication Critical patent/JPS6414955A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE:To obtain good optical characteristics by improving moisture resistance using a plasma nitride film for the passivation film of photosensor and prevent scattering of light at the interface of protection film through removal of only plasma nitride film on a photodiode. CONSTITUTION:Aluminum wirings 33 are laid, a plasma nitride film is laid as an interlayer insulation film 34, moreover a shield aluminum film 35 is formed and the shield aluminum film 35 on the photosensitive surface 37 is removed by the etching. A plasma nitride film is then formed as a passivation film 36 and the interlayer insulation film 34 and passivation film 36 are removed by the etching to form photosensitive part 37 and pad in order to expose the PSG film 70 on the photosensitive surface of region PD. For the etching of plasma nitride film, CF4+O2 (4%) gas is used. Since this gas provides a nitride film and oxide film selection ratio of 7, only the nitride film is removed almost without etching the oxide film 27.
JP62170673A 1987-07-08 1987-07-08 Manufacture of photosensor Pending JPS6414955A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62170673A JPS6414955A (en) 1987-07-08 1987-07-08 Manufacture of photosensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62170673A JPS6414955A (en) 1987-07-08 1987-07-08 Manufacture of photosensor

Publications (1)

Publication Number Publication Date
JPS6414955A true JPS6414955A (en) 1989-01-19

Family

ID=15909259

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62170673A Pending JPS6414955A (en) 1987-07-08 1987-07-08 Manufacture of photosensor

Country Status (1)

Country Link
JP (1) JPS6414955A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170481A (en) * 1987-01-06 1988-07-14 Naigai Kaaboninki Kk Ribbon ink for dot printer
JPH08213581A (en) * 1995-11-10 1996-08-20 Matsushita Electron Corp Integrated photodetector and manufacturing method thereof
JPH10284711A (en) * 1997-04-10 1998-10-23 Hamamatsu Photonics Kk Light-receiving semiconductor device with built-in bicmos

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046674A (en) * 1983-08-24 1985-03-13 Toshiba Corp Solid-state image pickup device
JPS60218868A (en) * 1984-04-13 1985-11-01 Fuji Electric Corp Res & Dev Ltd Manufacture of compound element
JPS6281758A (en) * 1985-10-07 1987-04-15 Fuji Electric Co Ltd Semiconductor integrated circuit device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6046674A (en) * 1983-08-24 1985-03-13 Toshiba Corp Solid-state image pickup device
JPS60218868A (en) * 1984-04-13 1985-11-01 Fuji Electric Corp Res & Dev Ltd Manufacture of compound element
JPS6281758A (en) * 1985-10-07 1987-04-15 Fuji Electric Co Ltd Semiconductor integrated circuit device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63170481A (en) * 1987-01-06 1988-07-14 Naigai Kaaboninki Kk Ribbon ink for dot printer
JPH08213581A (en) * 1995-11-10 1996-08-20 Matsushita Electron Corp Integrated photodetector and manufacturing method thereof
JPH10284711A (en) * 1997-04-10 1998-10-23 Hamamatsu Photonics Kk Light-receiving semiconductor device with built-in bicmos

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