JPS6044749B2 - Ｍｏｓ記憶器に対する関数発生器 - Google Patents
Ｍｏｓ記憶器に対する関数発生器Info
- Publication number
- JPS6044749B2 JPS6044749B2 JP52081905A JP8190577A JPS6044749B2 JP S6044749 B2 JPS6044749 B2 JP S6044749B2 JP 52081905 A JP52081905 A JP 52081905A JP 8190577 A JP8190577 A JP 8190577A JP S6044749 B2 JPS6044749 B2 JP S6044749B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- flip
- node
- flop
- signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000006870 function Effects 0.000 claims description 20
- 230000015654 memory Effects 0.000 claims description 11
- 230000000295 complement effect Effects 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims 1
- 230000000630 rising effect Effects 0.000 claims 1
- 238000011156 evaluation Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 238000012854 evaluation process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 210000000352 storage cell Anatomy 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 210000004027 cell Anatomy 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Logic Circuits (AREA)
- Read Only Memory (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2630797A DE2630797C2 (de) | 1976-07-08 | 1976-07-08 | Funktionsgenerator zur Erzeugung einer Spannung an einem Knoten, an den den Bitleitungen eines MOS-Speichers zugeordnete Flip-Flops aus MOS-Transistoren angeschlossen sind |
| DE2630797.1 | 1976-07-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS537141A JPS537141A (en) | 1978-01-23 |
| JPS6044749B2 true JPS6044749B2 (ja) | 1985-10-05 |
Family
ID=5982530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP52081905A Expired JPS6044749B2 (ja) | 1976-07-08 | 1977-07-08 | Ｍｏｓ記憶器に対する関数発生器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4119871A (OSRAM) |
| JP (1) | JPS6044749B2 (OSRAM) |
| DE (1) | DE2630797C2 (OSRAM) |
| FR (1) | FR2357980A1 (OSRAM) |
| GB (1) | GB1587130A (OSRAM) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4168490A (en) * | 1978-06-26 | 1979-09-18 | Fairchild Camera And Instrument Corporation | Addressable word line pull-down circuit |
| US4208730A (en) * | 1978-08-07 | 1980-06-17 | Rca Corporation | Precharge circuit for memory array |
| US4543501A (en) * | 1978-09-22 | 1985-09-24 | Texas Instruments Incorporated | High performance dynamic sense amplifier with dual channel grounding transistor |
| US4274013A (en) * | 1979-02-09 | 1981-06-16 | Bell Telephone Laboratories, Incorporated | Sense amplifier |
| US4421996A (en) * | 1981-10-09 | 1983-12-20 | Advanced Micro Devices, Inc. | Sense amplification scheme for random access memory |
| US4694205A (en) * | 1985-06-03 | 1987-09-15 | Advanced Micro Devices, Inc. | Midpoint sense amplification scheme for a CMOS DRAM |
| GB0229763D0 (en) | 2002-12-23 | 2003-01-29 | Renishaw Plc | Signal transmission system for a trigger probe |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
| DE2309192C3 (de) * | 1973-02-23 | 1975-08-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Regenerierschaltung nach Art eines getasteten Flipflops und Verfahren zum Betrieb einer solchen Regenerierschaltung |
| US3949381A (en) * | 1974-07-23 | 1976-04-06 | International Business Machines Corporation | Differential charge transfer sense amplifier |
| GB1523752A (en) * | 1974-08-28 | 1978-09-06 | Siemens Ag | Dynamic semiconductor data stores |
| US4000413A (en) * | 1975-05-27 | 1976-12-28 | Intel Corporation | Mos-ram |
| US3993917A (en) * | 1975-05-29 | 1976-11-23 | International Business Machines Corporation | Parameter independent FET sense amplifier |
| US4025907A (en) * | 1975-07-10 | 1977-05-24 | Burroughs Corporation | Interlaced memory matrix array having single transistor cells |
| US4050061A (en) * | 1976-05-03 | 1977-09-20 | Texas Instruments Incorporated | Partitioning of MOS random access memory array |
| US4028557A (en) * | 1976-05-21 | 1977-06-07 | Bell Telephone Laboratories, Incorporated | Dynamic sense-refresh detector amplifier |
-
1976
- 1976-07-08 DE DE2630797A patent/DE2630797C2/de not_active Expired
-
1977
- 1977-06-02 US US05/802,815 patent/US4119871A/en not_active Expired - Lifetime
- 1977-07-04 FR FR7720481A patent/FR2357980A1/fr active Granted
- 1977-07-06 GB GB28207/77A patent/GB1587130A/en not_active Expired
- 1977-07-08 JP JP52081905A patent/JPS6044749B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2357980A1 (fr) | 1978-02-03 |
| US4119871A (en) | 1978-10-10 |
| JPS537141A (en) | 1978-01-23 |
| GB1587130A (en) | 1981-04-01 |
| FR2357980B1 (OSRAM) | 1984-08-10 |
| DE2630797B1 (de) | 1977-12-15 |
| DE2630797C2 (de) | 1978-08-10 |
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