JPS604218A - Coating method of resist material on semiconductor wafer - Google Patents

Abstract

PURPOSE:To obtain a uniform film thickness by a method wherein a resist material is evaporated in a vacuum and a semiconductor wafer is put in that atmosphere. CONSTITUTION:A semiconductor wafer 2 held by a wafer guide 6 is placed in a chamber 5 and the chamber 5 is evacuated through an exhaust outlet 7. After a pressure in the chamber 5 is lowered to a suitable value, a resist material 4 is poured into the chamber 5 through a resist inlet 8. Then the resist material 4 is evaporated and the inside of the chamber 5 becomes the atmosphere of the evaporated material and the resist material 4 adheres to the semiconductor wafer 2. With this constitution, a resist film with a uniform thickness and small density of defects such as pin-holes can be obtained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an improvement in a method for applying a resist material used to form a pattern on a semiconductor wafer.

[Prior art]

FIG. 1 is a front view showing an example of a conventional coating device.
(3) is a nozzle for dropping resist material onto the semiconductor wafer (2); (4) is a nozzle (
3) is the resist material dropped from step 3).

In this coating method using conventional equipment, semiconductor wafers (2
) is placed on the vacuum chuck il+ and vacuum-adsorbed. Then, the resist material (4) guided from the nozzle (3) is dropped onto the semiconductor wafer (2) as shown by the broken line arrow. After dropping an appropriate amount, the semiconductor wafer (2) is rotated at a rotation speed to obtain the desired film thickness.

However, in this conventional method, as the film thickness becomes smaller, the uniformity of the film thickness within the surface deteriorates, and there is a risk that defects such as pinholes may occur.

[Overview of the invention]

This invention was made in view of the above points. By vaporizing the resist material in a vacuum and placing the semiconductor wafer in the vaporized atmosphere, the film thickness is small and the film is uniform on the wafer surface. The purpose of the present invention is to provide a method for applying a resist material that has a high defect density and a low defect density.

[Embodiments of the invention]

FIG. 2 is a sectional view showing an example of the implementation status of this invention.
6) is a chamber, (6) is a wafer guide that holds the semiconductor wafer (2) as shown, (7) is an exhaust port for evacuating the chamber (5), and (8) is a vacuum chamber. a resist injection port (9) for injecting the resist 114r into the chamber (5) as shown by the dashed arrow;
is a shutter for controlling the thickness of the resist film applied to the semiconductor wafer (2).

In the method of this embodiment, a semiconductor wafer (2) held by a wafer guide (6) is placed at the position shown in the chamber (5). Next, the inside of the chamber (5) is evacuated from the exhaust port (7). After the pressure in the chamber (5) reaches a suitable level, the resist material (4) is injected from the resist injection port (8) as shown by the broken line arrow. The injected resist material (4) is vaporized, and the inside of the chamber (5) becomes an atmosphere in the vaporized state. Then, a resist material (4) is attached to the semiconductor wafer (2) placed in the chamber (5) in that atmosphere. Even if the chamber (5) is extremely small, if it has an appropriate size, the uniformity of the vaporized resist atmosphere will be good.
The in-plane uniformity of the deposition on the wafer (2) is excellent regardless of the film thickness.

Furthermore, since the resist material (4) is also in a vaporized state, the density of defects such as pinholes can be extremely reduced. Next, the film thickness is controlled using chamber f5.
This can be easily done by opening and closing the shutter (9) installed inside i. Of course, in the method of the present invention, it is necessary to use a resist material that does not cause component separation even when vaporized.

In addition, although the case of one semiconductor wafer was shown in the above embodiment, a large number of semiconductor wafers may be accommodated and processed at the same time. In addition, in the above practical example, an ordinary chamber was used to create a vacuum state, but any device that can create a vacuum state may be used, such as a clean oven. In this case, after coating is completed, Prebaking can also be performed continuously by changing the atmosphere.

〔Effect of the invention〕

As explained above, in this invention, the semiconductor wafer is placed in an atmosphere in which the resist material is vaporized, and the resist film is deposited on the surface of the semiconductor wafer. A resist film with low density is obtained.

[Brief explanation of drawings]

FIG. 1 is a front view showing an example of a conventional coating device. FIG. 2 is a sectional view showing an example of the state of implementation of the present invention. In the figure, (2) is a semiconductor wafer, (4) is a resist material, (5) is a chamber, (6) is a wafer guide,
(7) is an exhaust port, and (8) is a resist injection port. In addition, the same reference numerals in the figures indicate parts corresponding to the same dimensions. Agent Masuo Oiwa Figure 1 Figure 2 Figure 2

Claims (2)

[Claims] (1) A resist for a semiconductor wafer, characterized in that the resist material is deposited on the semiconductor wafer by injecting and vaporizing the resist material after evacuating the inside of a container containing the semiconductor wafer. How to apply the material. (2) A method for semiconductor wafers according to claim 1, characterized in that a shutter is provided opposite the surface of the semiconductor wafer in the container, and the film thickness of the deposited resist material is controlled by opening and closing the shutter. How to apply resist material.