JPS63119531A - Photoresist coater in manufacture of semiconductor - Google Patents
Photoresist coater in manufacture of semiconductorInfo
- Publication number
- JPS63119531A JPS63119531A JP26620886A JP26620886A JPS63119531A JP S63119531 A JPS63119531 A JP S63119531A JP 26620886 A JP26620886 A JP 26620886A JP 26620886 A JP26620886 A JP 26620886A JP S63119531 A JPS63119531 A JP S63119531A
- Authority
- JP
- Japan
- Prior art keywords
- photoresist
- application
- exhaust gas
- solvent
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000004065 semiconductor Substances 0.000 title claims description 3
- 239000002904 solvent Substances 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 12
- 239000010408 film Substances 0.000 abstract description 11
- 239000010409 thin film Substances 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000003595 mist Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000005587 bubbling Effects 0.000 description 4
- 238000007599 discharging Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Coating Apparatus (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体製造に使用するフォトレジストの塗布
装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photoresist coating apparatus used in semiconductor manufacturing.
第２図は従来のフォトレジスト塗布装置を示す断面図で
あり、図において、（１）はスピンモータ、（２）はス
ピンモータ（１）の軸端に装着された吸着チャック、（
３）はカップ、（４）は排液チューブ、（５）は排気ダ
クト、（６）はフォトレジストを吐出するノズル、（７
）はシリコン・ウェハ、（８）はカバーである。FIG. 2 is a cross-sectional view of a conventional photoresist coating device. In the figure, (1) is a spin motor, (2) is a suction chuck attached to the shaft end of the spin motor (1), and (
3) is a cup, (4) is a drainage tube, (5) is an exhaust duct, (6) is a nozzle for discharging photoresist, (7)
) is the silicon wafer, and (8) is the cover.
次に動作について説明する。適当な手段でシリコン・ウ
ェハ（７）を吸着チャック（２）に載せる。Next, the operation will be explained. The silicon wafer (7) is placed on the suction chuck (2) by any suitable means.
吸着チャック（２）に吸着保持されたシリコン・ウェハ
（７）にノズル（６）よりフォトレジストを吐出して滴
下する。滴下されたフォトレジストはウェハ上でスピン
モータ（１）の回転により薄膜状に拡げられる。この際
、回転によって余計なフォトレジストはウェハ（７）か
ら飛び散る。その一部はカップ（３）の側壁に当って側
壁を伝わってカップ（３）の下部に溜り、排液チューブ
（４）より排出される。他の一部はミストとなる。この
ミストは排気ダクト（５）より排出される。ウェハ（力
の上に形成されるフォトレジストの膜厚はフォトレジス
トの拡がり速度と溶媒の揮発状況とで決定される。溶媒
の揮発状況は排気ダクト（５）からの排気の強さと、環
境の湿度に左右される。排気か弱過ぎるとミストが排気
ダクト（５）から排出されずウェハ（９上に落ち膜厚が
増し、排気が強くなると膜厚の均一性が悪化する。従っ
て排気の強さは適当な値に保つことが必要である。一方
で、環境の湿度はフォトレジスト中の溶媒が揮発し蓄積
されて漸増してゆく。排気を強くすれば溶媒の蓄積はな
くなるが、上述の如く膜厚均一性の悪化をもたらす。Photoresist is discharged from a nozzle (6) and dropped onto a silicon wafer (7) held by suction chuck (2). The dropped photoresist is spread into a thin film on the wafer by rotation of a spin motor (1). At this time, unnecessary photoresist is scattered from the wafer (7) due to the rotation. A part of the liquid hits the side wall of the cup (3), travels along the side wall, accumulates at the bottom of the cup (3), and is discharged from the drain tube (4). The other part becomes mist. This mist is exhausted from the exhaust duct (5). The thickness of the photoresist film formed on the wafer (force) is determined by the spreading speed of the photoresist and the volatilization status of the solvent.The volatilization status of the solvent is determined by the strength of the exhaust from the exhaust duct (5) and the environment. It depends on the humidity. If the exhaust is too weak, the mist will not be exhausted from the exhaust duct (5) and will fall onto the wafer (9), increasing the film thickness. If the exhaust is too strong, the uniformity of the film thickness will deteriorate. It is necessary to maintain the humidity at an appropriate value.On the other hand, the environmental humidity gradually increases as the solvent in the photoresist evaporates and accumulates.If the exhaust is strengthened, the accumulation of solvent will disappear, but the above-mentioned This results in deterioration of film thickness uniformity.
従来のフォトレジスト塗布装置は以上のように構成され
ているので、ミスト付着がなく均一な膜厚にしようとす
ると、環境湿度が徐々に減少し、溶媒の揮発状況が変化
し、膜厚の変動をもたらすという問題点があった。Conventional photoresist coating equipment is configured as described above, so if you try to achieve a uniform film thickness without mist adhesion, the environmental humidity will gradually decrease, the solvent volatilization situation will change, and the film thickness will fluctuate. There was a problem in that it brought about
この発明は上記のような問題点を解消するためになされ
たもので、ミスト付着がなく均一な膜厚で、なおかつ膜
厚の変動がないフォトレジスト塗布装置を得ることを目
的とする。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a photoresist coating device that does not cause mist adhesion, has a uniform film thickness, and has no variation in film thickness.
〔問題点を解決するための手段〕
この発明に係るフォトレジスト塗布装置は、排気圧を三
段階以上に変化させる機構を有するとともに、定温の溶
媒蒸気を一定量で吐出させる機構を有したものである。[Means for Solving the Problems] The photoresist coating apparatus according to the present invention has a mechanism for changing the exhaust pressure in three or more steps, and also has a mechanism for discharging a fixed amount of solvent vapor at a constant temperature. be.
この発明におけるフォトレジスト塗布装置は、直前の塗
布処理で残留する溶媒を強力な排気で一掃したのち、排
気を止め、その後、定温の溶媒蒸気を一定量で吐出して
環境湿度を一定条件に保ち、しかる後に、ウェハ上にフ
ォトレジストを滴下し、適当な排気圧のもとでスピンモ
ータを回転させ、フォトレジストを薄膜状に拡げる。The photoresist coating device of this invention uses powerful exhaust to wipe out the solvent remaining from the previous coating process, then stops the exhaust, and then discharges a constant amount of solvent vapor at a constant temperature to maintain a constant environmental humidity. After that, photoresist is dropped onto the wafer, and the spin motor is rotated under an appropriate exhaust pressure to spread the photoresist into a thin film.
以下、この発明の一実施例を図について説明する。第１
図において、（１）はスピンモータ、（２）は吸着チャ
ック、（３）はカップ、（４）は排液チューブ、（５）
は排気ダクト、（６）はノズル、（力はシリコン・ウェ
ハ、（８）はカバー、（９）は第１の調圧弁、（１０）
は第２の調圧弁、（１１）は溶媒蒸気吐出ノズル、（１
２）はチューブ、（１３）はバグリングガスを送るチュ
ーブ、（１４）は指令により開閉する弁、（１５）は内
部に溶媒を入れたバブリングタンクであり、溶媒は一定
温度に保たれている。第１の調圧弁（９）は開位置と閉
位置とを取り、閉位置のとき排気圧が零となる。第２の
調圧弁（１０）は全開位置と絞り位置とを取り、この絞
り位置と第１の調圧弁（９）の開位置とで塗布処理に適
した排気圧となるようにし、第２の調圧弁（１０）の全
開位置と第１の調圧弁（９）の開位置とで排気圧が最大
となる。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, (1) is a spin motor, (2) is a suction chuck, (3) is a cup, (4) is a drainage tube, (5)
is the exhaust duct, (6) is the nozzle, (force is the silicon wafer, (8) is the cover, (9) is the first pressure regulating valve, (10)
is the second pressure regulating valve, (11) is the solvent vapor discharge nozzle, (1
2) is a tube, (13) is a tube that sends bugling gas, (14) is a valve that opens and closes on command, and (15) is a bubbling tank with a solvent inside, and the solvent is kept at a constant temperature. . The first pressure regulating valve (9) has an open position and a closed position, and the exhaust pressure becomes zero when it is in the closed position. The second pressure regulating valve (10) has a fully open position and a throttle position, and this throttle position and the open position of the first pressure regulating valve (9) provide an exhaust pressure suitable for coating processing. The exhaust pressure becomes maximum at the fully open position of the pressure regulating valve (10) and the open position of the first pressure regulating valve (9).
かくして排気圧は三段階に調節される。In this way, the exhaust pressure is adjusted in three stages.
次に動作について説明する。適当な方法で搬送されて来
たシリコンφウェハ（７）が吸着チャック（２）に吸着
保持される。この間、第１の調圧弁（９）を開位置にし
、第２の調圧弁（１０）を全開位置にして、排気圧を最
大にしておく。これで直前の塗布処理で残留する溶媒蒸
気を一掃する。Next, the operation will be explained. A silicon φ wafer (7) transported by an appropriate method is suctioned and held by the suction chuck (2). During this time, the first pressure regulating valve (9) is set to the open position and the second pressure regulating valve (10) is set to the fully open position to maximize the exhaust pressure. This will purge any residual solvent vapor from the previous coating process.
その後、第１の調圧弁（９）を閉じて排気圧を零にする
。この状態で、弁（１４）を開きチューブ（１３）を介
してバグリングガスをタンク（１５）に送る。タンク（
１５）内の溶媒はバブリングにより気化し、その溶媒蒸
気はチューブ（１２）を介してノズル（１１）へ送られ
てそこから一定量で吐出される。一定時間経過後、弁（
１４）を閉じる。以上の動作により、カップ（３）の近
傍は適当な溶媒雰囲気となる。次にノズル（６）よりフ
ォトレジストを滴下し、第１の調圧弁（９）を開位置に
、第２の調圧弁（１０）を絞り位置にし、塗布処理に適
した排気圧となす。この状態でスピンモータ（１）を回
転させてフォトレジストを薄膜状に拡げる。Thereafter, the first pressure regulating valve (9) is closed to bring the exhaust pressure to zero. In this state, the valve (14) is opened and bugling gas is sent to the tank (15) via the tube (13). tank(
The solvent in 15) is vaporized by bubbling, and the solvent vapor is sent to the nozzle (11) through the tube (12) and discharged from there in a constant amount. After a certain period of time, the valve (
14) Close. Through the above operations, a suitable solvent atmosphere is created in the vicinity of the cup (3). Next, photoresist is dropped from the nozzle (6), and the first pressure regulating valve (9) is set to the open position and the second pressure regulating valve (10) is set to the throttle position to obtain an exhaust pressure suitable for the coating process. In this state, the spin motor (1) is rotated to spread the photoresist into a thin film.
かくして、各ウェハに対する塗布処理毎に同じ条件が設
定される。つまり塗布前のカップ（３）の近傍の雰囲気
が常に同一状態に保たれ、しかも塗布時には適正な排気
圧になされる。かくして膜厚に変動のない、面内均一な
塗布処理をすることができる。In this way, the same conditions are set for each coating process on each wafer. In other words, the atmosphere in the vicinity of the cup (3) before application is always kept in the same state, and at the time of application, an appropriate exhaust pressure is maintained. In this way, it is possible to perform a coating process that is uniform within the surface without any variation in film thickness.
なお、溶媒の温度は周囲環境またはフォトレジスト液の
温度と一致させるかまたは一定の温反差に維持すればよ
い。Note that the temperature of the solvent may be made to match the temperature of the surrounding environment or the photoresist solution, or may be maintained at a constant temperature difference.
また、上記実施例では、排気圧の調整を二つの調圧弁の
組合せで行なっているが、単一の調圧弁で三段階に切替
えられるものを丈用してもよい。溶媒蒸気を定量吐出す
る機構も、バブリング以外の方法を用いても同様の効果
が得られる。Further, in the above embodiment, the exhaust pressure is adjusted by a combination of two pressure regulating valves, but a single pressure regulating valve which can be switched to three stages may also be used. The same effect can be obtained even if a method other than bubbling is used for the mechanism for discharging a fixed amount of solvent vapor.
以上のように、この発明によれば、塗布処理直前のカッ
プ内雰囲気を一定条件になし、かつ処理中の排気圧を適
正なものにする機構を備えたので、膜厚変動のない、面
内均一な塗布処理をすることができる。As described above, according to the present invention, the atmosphere within the cup is kept under constant conditions immediately before the coating process, and the exhaust pressure during the process is adjusted to an appropriate level. Enables uniform coating.
第１図はこの発明の一実施例によるフォトレジスト塗布
装置を示す構成図、第２図は従来のフォトレジスト塗布
装置の構成図である。
図において、（９）は第１の調圧弁、（１０）は第２の
調圧弁、（１１）は溶媒蒸気を吐出するノズル、（１２
）ｔ（１３）はチューブ、（１４）は開閉する弁、（１
５）はバブリングタンクである。
なお、図中、同一符号は同一、または相当部分を示す。FIG. 1 is a block diagram showing a photoresist coating apparatus according to an embodiment of the present invention, and FIG. 2 is a block diagram of a conventional photoresist coating apparatus. In the figure, (9) is a first pressure regulating valve, (10) is a second pressure regulating valve, (11) is a nozzle that discharges solvent vapor, and (12) is a nozzle that discharges solvent vapor.
)t(13) is a tube, (14) is a valve that opens and closes, (1
5) is a bubbling tank. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (2)
いて、指令信号により三段階以上に排気圧を変化せしめ
る機構と、定温の溶媒蒸気を一定量で吐出させる機構と
を具備したことを特徴とするフォトレジスト塗布装置。(1) A photoresist coating device for semiconductor manufacturing, characterized by being equipped with a mechanism that changes the exhaust pressure in three or more steps based on a command signal, and a mechanism that discharges a fixed amount of solvent vapor at a constant temperature. Device.
温度と一致させるかまたは一定の温度差に維持する特許
請求の範囲第１項記載のフォトレジスト塗布装置。(2) The photoresist coating apparatus according to claim 1, wherein the temperature of the solvent is made to match the temperature of the surrounding environment or the photoresist solution, or is maintained at a constant temperature difference.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26620886A JPS63119531A (en) | 1986-11-07 | 1986-11-07 | Photoresist coater in manufacture of semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26620886A JPS63119531A (en) | 1986-11-07 | 1986-11-07 | Photoresist coater in manufacture of semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63119531A true JPS63119531A (en) | 1988-05-24 |
Family
ID=17427763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26620886A Pending JPS63119531A (en) | 1986-11-07 | 1986-11-07 | Photoresist coater in manufacture of semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63119531A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02122520A (en) * | 1988-10-31 | 1990-05-10 | Tokyo Electron Ltd | Application of resist |
| US5127362A (en) * | 1989-05-22 | 1992-07-07 | Tokyo Electron Limited | Liquid coating device |
| JPH05208163A (en) * | 1991-10-29 | 1993-08-20 | Internatl Business Mach Corp <Ibm> | Device and method of spin coating |
| JPH07169680A (en) * | 1993-08-30 | 1995-07-04 | Semiconductor Syst Inc | Spin coating device and method of suchas wafer |
| US5670210A (en) * | 1994-10-27 | 1997-09-23 | Silicon Valley Group, Inc. | Method of uniformly coating a substrate |
| US6977098B2 (en) | 1994-10-27 | 2005-12-20 | Asml Holding N.V. | Method of uniformly coating a substrate |
| US7018943B2 (en) | 1994-10-27 | 2006-03-28 | Asml Holding N.V. | Method of uniformly coating a substrate |
| US7030039B2 (en) | 1994-10-27 | 2006-04-18 | Asml Holding N.V. | Method of uniformly coating a substrate |
-
1986
- 1986-11-07 JP JP26620886A patent/JPS63119531A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02122520A (en) * | 1988-10-31 | 1990-05-10 | Tokyo Electron Ltd | Application of resist |
| US5127362A (en) * | 1989-05-22 | 1992-07-07 | Tokyo Electron Limited | Liquid coating device |
| JPH05208163A (en) * | 1991-10-29 | 1993-08-20 | Internatl Business Mach Corp <Ibm> | Device and method of spin coating |
| JPH07169680A (en) * | 1993-08-30 | 1995-07-04 | Semiconductor Syst Inc | Spin coating device and method of suchas wafer |
| US5670210A (en) * | 1994-10-27 | 1997-09-23 | Silicon Valley Group, Inc. | Method of uniformly coating a substrate |
| US6977098B2 (en) | 1994-10-27 | 2005-12-20 | Asml Holding N.V. | Method of uniformly coating a substrate |
| US7018943B2 (en) | 1994-10-27 | 2006-03-28 | Asml Holding N.V. | Method of uniformly coating a substrate |
| US7030039B2 (en) | 1994-10-27 | 2006-04-18 | Asml Holding N.V. | Method of uniformly coating a substrate |
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