JPH02122520A - Application of resist - Google Patents
Application of resistInfo
- Publication number
- JPH02122520A JPH02122520A JP27576788A JP27576788A JPH02122520A JP H02122520 A JPH02122520 A JP H02122520A JP 27576788 A JP27576788 A JP 27576788A JP 27576788 A JP27576788 A JP 27576788A JP H02122520 A JPH02122520 A JP H02122520A
- Authority
- JP
- Japan
- Prior art keywords
- coating
- space
- wafer
- photoresist
- solvent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000576 coating method Methods 0.000 claims abstract description 56
- 239000011248 coating agent Substances 0.000 claims abstract description 51
- 239000002904 solvent Substances 0.000 claims description 74
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 41
- 238000004528 spin coating Methods 0.000 abstract description 3
- 101150038956 cup-4 gene Proteins 0.000 abstract description 2
- 239000006185 dispersion Substances 0.000 abstract description 2
- 238000007599 discharging Methods 0.000 abstract 4
- 230000035515 penetration Effects 0.000 abstract 2
- 230000007613 environmental effect Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 48
- 235000012431 wafers Nutrition 0.000 description 31
- 239000011261 inert gas Substances 0.000 description 11
- 229920006395 saturated elastomer Polymers 0.000 description 11
- 230000006837 decompression Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 206010011732 Cyst Diseases 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明はＬ・シストの塗布方法に関する。[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a method for applying L. cyst.
（従来の技術）
半導体装置の製造過程に於てウェハにフォトレジスト膜
を一様に塗布する工程がある。この工程ではウェハの中
央部にフォトレジストを滴下した後、速い立ち上がりで
ウェハを高速回転することにより滴下したレジストを遠
心力によってウェハ表面上に全面にわたって分散させ、
ウェハ表面上にフォトレジスト膜を形成させるものであ
る。またウェハの高速回転は大気中で行い、ホトレジス
トは回転中に自然乾燥する。しかしながら、フォトレジ
ストがウェハの表面を分散する途中で、フォトレジスト
中の例えばシンナー等の溶媒が部分的に不均一に蒸発し
てしまい、レジストの粘性が部分的に変化するためウェ
ハの半径方向に厚ざむらが生じる。この様な厚ざむらを
軽減するために、溶媒の蒸気を発生させ、塗布雰囲気を
排気して溶媒の蒸気を吸引し、排気状態で塗布を行う装
置が特開昭６１−２９１２５号公報に開示されている。(Prior Art) In the manufacturing process of semiconductor devices, there is a step of uniformly coating a wafer with a photoresist film. In this process, photoresist is dropped onto the center of the wafer, and then the wafer is rotated at high speed with a quick start-up to disperse the dropped resist over the entire surface of the wafer using centrifugal force.
A photoresist film is formed on the wafer surface. Furthermore, the wafer is rotated at high speed in the atmosphere, and the photoresist is naturally dried during the rotation. However, while the photoresist is being dispersed on the wafer surface, the solvent in the photoresist, such as thinner, evaporates partially unevenly, causing the viscosity of the resist to change locally. Thick unevenness occurs. In order to reduce such thickness unevenness, JP-A-61-29125 discloses an apparatus that generates solvent vapor, evacuates the coating atmosphere, sucks the solvent vapor, and performs coating in the evacuated state. ing.
また、回転塗布容器内に溶媒溶液を入れ、溶媒雰囲気を
作り塗布を行う方法が特開昭５１−６５８８２号公報に
開示されている。Furthermore, Japanese Patent Application Laid-Open No. 51-65882 discloses a method in which a solvent solution is placed in a spin coating container to create a solvent atmosphere for coating.
（発明が解決しようとする課Ｂ）
しかしながら、ウェハの大口径化と超ＬＳＩ化に伴い、
よりいっそう均一にフォトレジストを塗布することが要
求されている。このため上記公報に示されるようにフォ
トレジストの溶媒蒸気をバプラで発生させ、塗布カップ
下部の排気ポンプを作動させ、送気管を介し塗布カップ
内に溶媒蒸気を導入し塗布部を溶媒蒸気雰囲気にして、
フォトレジスト中の溶媒の蒸発を抑制し、塗布中のレジ
ストの粘性変化を抑えているが、排気ポンプ、バブラ等
が塗布動作中動作しているため、またさらに、ウェハの
高速回転により塗布カップ内に気流の流れが生じ、厳密
には溶媒蒸気の濃度が場所により異なり溶媒蒸気の濃度
差によりフォトレジスト中の溶媒がウェハの各部におい
て不均一に蒸発し、フォトレジストの粘性が部分的に変
化するためウェハの膜厚にわずかでは有るが不均一な部
分が生じると言う問題があった。また、溶媒溶液を塗布
容器内に入れ、フォトレジストをウェハ上に滴下した後
、蓋を閉め溶媒の蒸気を飽和させ回転塗布する方法では
、蓋の開閉により塗布容器内を完全に飽和溶媒雰囲気に
するには長時間を要し、作業効率が非常に低下する問題
があった。また、ある程度の溶媒が蒸発した後の溶媒雰
囲気では塗布容器内の場所により、溶媒雰囲気濃度が異
なり１、ウェハを塗布のため高速回転させることにより
、気流の流れが生じ、ウェハの溶媒雰囲気濃度が厳密に
は場所により異なってしまい、フォトレジストの粘性が
部分的に変化するためウェハの膜厚に僅かではあるが不
均一な部分が生じると言う問題があった。特に超ＬＳＩ
等の超微細加工を要求される工程ではこの僅かな不均一
が超微細パターン゛完成寸法のばらつき等に非常な悪影
響を及ぼしている。この発明は上記点を改善するために
なされたもので、均一な塗布膜を形成できるフォトレジ
ストの塗布方法を提供しようとするものである。(Problem B that the invention seeks to solve) However, with the increasing diameter of wafers and the use of ultra-LSIs,
There is a need to apply photoresist more uniformly. For this purpose, as shown in the above publication, photoresist solvent vapor is generated by a bubbler, the exhaust pump at the bottom of the coating cup is activated, and the solvent vapor is introduced into the coating cup through the air pipe to create a solvent vapor atmosphere in the coating area. hand,
This suppresses the evaporation of the solvent in the photoresist and suppresses changes in the viscosity of the resist during coating. An air current is generated, and strictly speaking, the concentration of solvent vapor varies depending on the location. Due to the difference in concentration of solvent vapor, the solvent in the photoresist evaporates unevenly in each part of the wafer, and the viscosity of the photoresist changes locally. Therefore, there is a problem in that the film thickness of the wafer is slightly non-uniform. In addition, in the method of putting a solvent solution into a coating container, dropping photoresist onto the wafer, and then closing the lid and saturating the solvent vapor, the coating method creates a saturated solvent atmosphere by opening and closing the lid. There was a problem in that it took a long time to do this, and the work efficiency was greatly reduced. In addition, after a certain amount of solvent has evaporated, the concentration of the solvent atmosphere varies depending on the location in the coating container.1 When the wafer is rotated at high speed for coating, an air current is generated, and the concentration of the solvent atmosphere on the wafer is Strictly speaking, the viscosity of the photoresist varies depending on the location, and there is a problem in that the viscosity of the photoresist changes locally, resulting in slight non-uniformity in the film thickness of the wafer. Especially super LSI
In processes that require ultra-fine processing, such as, this slight non-uniformity has a very negative effect on variations in the finished dimensions of ultra-fine patterns. This invention has been made to improve the above-mentioned problems, and it is an object of the present invention to provide a photoresist coating method that can form a uniform coating film.
（課題を解決するための手段）
この発明は気窓容器に被塗布物を設け、上記気密容器内
を予め定められた圧力値に減圧排気した後、排気を停止
した状態で前記レジストを構成する溶媒雰囲気ガスを前
記気密容器内に流入させ、前記溶媒雰囲気ガスで置換し
た後、この溶媒雰囲気ガス中でレジストの塗布を行う事
を特徴とするレジストの塗布方法を得るものである。(Means for Solving the Problems) The present invention provides an object to be coated in an air-tight container, and after evacuation of the airtight container to a predetermined pressure value, forms the resist with the evacuation stopped. A resist coating method is provided, which comprises causing a solvent atmosphere gas to flow into the airtight container and replacing the solvent atmosphere gas with the solvent atmosphere gas, and then coating the resist in the solvent atmosphere gas.
く作用）
本発明によれば、均一な濃度の溶媒ガス雰囲気中で、回
転塗布することにより均一な塗布膜を形成できる。According to the present invention, a uniform coating film can be formed by spin coating in a solvent gas atmosphere of uniform concentration.
（実施例）
以下本発明レジストの塗布方法を半導体ウェハ上へのフ
ォトレジスト塗布装置に適用した一実施例につき図面を
参照して説明する。第１図に示すようにスピンナー装置
の回転塗布部く０）はウェハ（１）を載置吸着するチャ
ック（２）と、このチャック（２）を高速回転例えば５
０００〜１００００回転／分させろモータく３）と、相
対的に上下に移動可能とするため２分割したカップ部即
ち外カップ（４）と下カップ（５）及びカップ内を完全
密封チャンバーとするため外カップ（４）の上部を気密
に覆う蓋体（６）とから構成されている。外カップ（４
）の内側壁面は飛散したフォトレジストの誂ね返りを抑
えるため”］゛′の字の上下辺を広げた形状をしている
。また外カップク４）は下カップ（５）と０−リング等
による気密封止構造となっている。また、下カップ（５
）は図示しない駆動装置により垂直方向に移動自在に設
けられ、第１図の外カップ（４）の気密状態から、例え
ば下方に移動し第１−ａ図に示した外カップ（４）と下
カップ（５）との間に間ｇ（７）を設けることができる
。この間隙（７）を通り図示しない配管により塗布後の
雰囲気ガス等の排気及び外カップ（４）に飛散したフォ
トレジストや裏面リンスやサイドリンスやカップ洗浄液
等の排出ができる構造となっている。また、蓋体（６）
も、上述の下カップ（５）と同様に、外カップ（４）と
０−リング等による気密封止構造となっている。(Embodiment) An embodiment in which the resist coating method of the present invention is applied to a photoresist coating apparatus on a semiconductor wafer will be described below with reference to the drawings. As shown in FIG. 1, the rotating application section (0) of the spinner device includes a chuck (2) for mounting and suctioning the wafer (1), and a chuck (2) that rotates at high speed, for example
000 to 10,000 revolutions per minute (3) and the cup is divided into two parts, namely the outer cup (4) and the lower cup (5), in order to be able to move up and down relative to each other, and the inside of the cup is made into a completely sealed chamber. It consists of a lid (6) that airtightly covers the upper part of the outer cup (4). Outer cup (4
) has a shape with the top and bottom sides widened to prevent the scattered photoresist from rebounding. Also, the outer cup 4) has a lower cup (5) and an O-ring, etc. It has an airtight sealing structure.In addition, the lower cup (5
) is provided to be movable in the vertical direction by a drive device (not shown), and is moved, for example, downward from the airtight state of the outer cup (4) shown in Fig. 1 to the outer cup (4) and the lower part shown in Fig. A gap g (7) can be provided between the cup (5) and the cup (5). A pipe (not shown) that passes through this gap (7) is configured to exhaust atmospheric gas after coating and discharge scattered photoresist, back rinse, side rinse, cup cleaning liquid, etc. to the outer cup (4). In addition, the lid body (6)
Similarly to the lower cup (5) described above, the outer cup (4) has an airtight sealing structure using an O-ring or the like.
このように外カップ（４）と下カップ（５）と蓋体（６
）で構成された空間で塗布空間（８）を構成している。In this way, the outer cup (4), lower cup (5) and lid body (6)
) constitutes a coating space (8).
そして、この蓋体（６）のウェハ（１）の中心に対応す
る位置に、フォトレジスト液を塗布するレジストノズル
（９）を挿入自在に位置合わせでき、かつ気密封止でき
るが如くシャッターく１０）を設けた貫通孔（１１）が
もうけられている。さらに上記蓋体（６）には上記空間
（８）を所定の減圧例えば７００〜６００ ｍ ｍ Ｈ
ｇにするための減圧排気孔（１２）と、上記塗布空間（
８）の減圧を利用して、上記塗布空間（８）ヘウエハ（
１）上に塗布するフォトレジストを構成している溶媒例
えばシンナー等の例えば溶媒雰囲気分圧８０％以上の飽
和状態溶媒雰囲気ガス（１３）を導入する雰囲気ガス導
入孔（１４）と、塗布空間（８）内をパージまたは塗布
空間（８）内の溶媒雰囲気ガス（１３）のガス濃度を制
御するために不活性ガス例えば窒素ガスあるいはクリー
ンエアーを導入するガス導入孔（１５）が設けられてい
る。そして、上記減圧排気孔（１２）は配管により減圧
排気装置（１２ａ）に接続され、配管途中には配管流路
を開閉するバルブ（１２ｂ）が設けられている。同様に
、ガス導入孔（１５）も配管により不活性ガス例えばＮ
２ガスまたはクリーンエアーの供給［（１５ａ ）に配
管流路を開閉するバルブ（１５ｂ）を介して接続されて
いる。A resist nozzle (9) for applying a photoresist solution can be freely inserted into the lid (6) at a position corresponding to the center of the wafer (1), and the shutter 10 can be hermetically sealed. ) is provided with a through hole (11). Further, the lid (6) has the space (8) reduced to a predetermined pressure, for example, 700 to 600 mmH.
g, a vacuum exhaust hole (12) and the coating space (
Using the reduced pressure in step 8), move the wafer to the coating space (8).
1) An atmosphere gas introduction hole (14) for introducing a saturated solvent atmosphere gas (13) having a solvent atmosphere partial pressure of 80% or more, such as a solvent such as thinner, constituting the photoresist to be coated thereon, and a coating space ( 8) A gas introduction hole (15) is provided for introducing an inert gas such as nitrogen gas or clean air in order to purge the interior or control the gas concentration of the solvent atmosphere gas (13) in the coating space (8). . The decompression exhaust hole (12) is connected to the decompression exhaust device (12a) by piping, and a valve (12b) for opening and closing the piping flow path is provided in the middle of the piping. Similarly, the gas introduction hole (15) is also connected to an inert gas such as N by piping.
It is connected to a gas or clean air supply [(15a) via a valve (15b) that opens and closes the piping flow path.
そして上記蓋体（６）も図示しない駆動装置により垂直
方向に移動自在と成っている。上記蓋体（６）の上昇に
より外カップ（４）と蓋体（６）とが開きチャック（２
）ヘウエハ（１）のロード／アンロードを可能としてい
る。一方、上記塗布部（０）とは別に溶剤雰囲気ガス（
１３）を発生させる雰囲気ガス発生装置（１６）が設け
られている。この雰囲気ガス発生装置（１６）は密閉容
器（１７）を形成し、この容器（１７）内には塗布する
フォトレジスト例えば０ＦＰＲ−８００（商品名）を構
成している溶媒例えばセロソルブスアセテートと同じ溶
媒く１８）が収納されている。The lid (6) is also vertically movable by a drive device (not shown). As the lid (6) rises, the outer cup (4) and the lid (6) open and the chuck (2) opens.
) The wafer (1) can be loaded/unloaded. On the other hand, apart from the application part (0), a solvent atmosphere gas (
An atmospheric gas generator (16) for generating gas (13) is provided. This atmospheric gas generator (16) forms a closed container (17), and inside this container (17) there is a photoresist to be applied, such as the same solvent as cellosolve acetate, which constitutes 0FPR-800 (trade name). A solvent (18) is stored.
そして、溶媒（１８）の上部には溶媒が蒸発し飽和溶媒
雰囲気ガスを形成する溶媒雰囲気空間（１９）が設けら
れている。この空間（１９）は上記塗布空間（８）に比
べ十分大きな空間と成っている。即ち、溶媒雰囲気空間
（１９）＞＞塗布空間（８）の関係にしＩ、空間（１９
）の溶媒雰囲気ガ、ス（１３）が空間（８）へバルブ（
２１）を介して吸入を容易にしている。そして、この溶
媒雰囲気空間（１９）と前記塗布空間（８）とは上記溶
媒雰囲気ガスを塗布空間（８）に導入する配管（２０）
により蓋体（６）の溶媒雰囲気ガス導入孔く１４）を介
し接続され、また配管（２０）の途中には配管流路を開
閉するバルブ（２１）が設けられている。また、密閉容
器（１７）には溶剤（１８）の液面下に位置する如くバ
ブラー（２２）が設けられ、このバブラーへは溶剤雰囲
気空間（１９）の溶媒雰囲気ガス（１３）が塗布空間（
８）へ流入した分の減圧分を補うだけのクリーンエアー
または不活性ガスが補給される如く設けられている。従
って、溶媒雰囲気空間（１９）＞＞塗布空間（８）の関
係にあるため、溶媒雰囲気空間（１９）は常に安定した
飽和溶剤雰囲気ガスで溝たされた状態を維持できる。A solvent atmosphere space (19) is provided above the solvent (18) in which the solvent evaporates to form a saturated solvent atmosphere gas. This space (19) is sufficiently larger than the coating space (8). That is, the relationship I and space (19) are as follows: solvent atmosphere space (19) >> coating space (8).
) solvent atmosphere gas (13) enters the space (8) through the valve (
21) to facilitate inhalation. The solvent atmosphere space (19) and the coating space (8) are connected to a pipe (20) that introduces the solvent atmosphere gas into the coating space (8).
A valve (21) is provided in the middle of the pipe (20) to open and close the pipe flow path. Further, a bubbler (22) is provided in the closed container (17) so as to be located below the liquid level of the solvent (18), and the solvent atmosphere gas (13) in the solvent atmosphere space (19) is supplied to the bubbler in the application space (
Clean air or inert gas is provided to compensate for the reduced pressure flowing into 8). Therefore, because of the relationship: solvent atmosphere space (19)>>coating space (8), the solvent atmosphere space (19) can always maintain a state filled with stable saturated solvent atmosphere gas.
次に動作について説明する。Next, the operation will be explained.
まず溶媒雰囲気空間く１９）のクリーンエアーまたは不
活性ガス例えばＮ２ガスを溶媒（１８）の自然蒸発等に
より例えば溶媒雰囲気分圧８０％以上の大気圧の飽和溶
媒雰囲気ガスにする。また、溶媒雰囲気ガス発生装置（
１６）に溶媒（１８）を新たに入れた場合または溶媒を
入れ換えた時には、雰囲気ガス発生装置（１６）のバブ
ラー（２２）の図示しないバルブを閉じ溶媒雰囲気空間
（１９）を例えば減圧排気装置（１２ａ）を動作させ図
示しない配管を経由して減圧排気し、この後バブラー（
２２）の図示しないバルブを開きバブラー（２２）を動
作させクリーンエアー又は不活性ガスをバブラー（２２
）から噴出させ、大気圧の飽和溶媒雰囲気ガスを作成し
ても良い。First, clean air or an inert gas such as N2 gas in the solvent atmosphere space 19) is converted into a saturated solvent atmosphere gas at atmospheric pressure with a solvent atmosphere partial pressure of 80% or more, for example, by natural evaporation of the solvent (18). In addition, a solvent atmosphere gas generator (
When a new solvent (18) is added to the atmosphere gas generator (16) or when the solvent is replaced, the valve (not shown) of the bubbler (22) of the atmosphere gas generator (16) is closed and the solvent atmosphere space (19) is replaced with, for example, a vacuum evacuation device ( 12a) is operated to exhaust the air under reduced pressure via piping (not shown).
Open the valve (not shown) of 22) and operate the bubbler (22) to supply clean air or inert gas to the bubbler (22).
) to create a saturated solvent atmosphere gas at atmospheric pressure.
次に、蓋体（６）を図示しない駆動装置により上方に移
動し、図示しないロボット装置またはマニュアル操作に
よりウェハ（１）をチャック（２）へ載置する。蓋体（
６）を図示しない駆動装置により下方に移動し、外カッ
プ（４）と気密に成る如く当接する。この時下カップ（
５）は外カップ（４）に気密に成る如く当接している。Next, the lid body (6) is moved upward by a drive device (not shown), and the wafer (1) is placed on the chuck (2) by a robot device (not shown) or by manual operation. Lid (
6) is moved downward by a drive device (not shown) and comes into airtight contact with the outer cup (4). At this time, the lower cup (
5) is in airtight contact with the outer cup (4).
また、上記蓋体（６）に接続している不活性ガスまたは
クリーンエアー供給１（１５ａ）に接続しているバルブ
（１５ｂ）と、レジストノズル（９）からフォトレジス
トをウェハく１）へ滴下する貫通孔（１１）のシャッタ
ー（１０）及び雰囲気ガス発生装置からの雰囲気ガス（
１３）導入用のバルブ（２１）等のバルブ及びシャッタ
ーは閉状態にしておく。そこで、減圧排気用のバルブ（
１２ｂ）を開き減圧排気装置（１２ａ）を動作し、塗布
空間（８）を徐々に排気し所望の減圧状態例えば７００
〜６００ ｍ ｍ Ｈｇに減圧排気する。所望の圧力に
到達したところで減圧排気ラインのバルブ（１２ｂ）を
閉じる。即ち塗布空間（８）は所望の減圧状態に保たれ
た気密室となる。次に雰囲気ガス発生装置（１６）の溶
媒雰囲気空間（１９）と塗布空間（８）との間を開閉す
るバルブ（２１）を開き塗布空間（８）の減圧状態値、
例えば７００〜６００ｍｍＨｇの大気圧に対しての圧力
差分を補充するが如く溶媒雰囲気空間（１９）内の均一
な濃度の安定した飽和溶媒雰囲気ガス（１３）が塗布空
間（８）内に流れ込む。また、上記の流れ込んだ溶媒雰
囲気ガス（１３）に対応する量のクリーンエアーまたは
不活性ガスがバブラー（２２）から導入される。この時
、溶媒雰囲気空間（１９）〉〉塗布空間（８）の関係が
あるためバブラー（２２）から導入された気体量で溶媒
雰囲気ガス（１３）ｉ！１度の均一性が乱されることは
ない。従って、塗布空間（８）内は均一な濃度の飽和溶
媒雰囲気ガスで隅々まで一様に満たされかつ大気圧状態
となる。ここで雰囲気ガス導入ラインのバルブ（２１）
を閉じる。次にレジストノズル（９）を図示しないロボ
ット機構等により蓋体（６）の中央に位置するレジス塗
布用の貫通孔（１１）に自動的にセツティングする。そ
して、上記貫通孔（１１）に設けられたシャッター（１
０）を所定の時間だけ開き、レジストノズル（９）より
フォトレジストをウェハ（１）へ向は滴下する。滴下後
レジストノズル（９）はウェハ（１）の上方位置より外
側所定の位置に戻り次のフォトレジスト滴下期まで待機
する。従って、フォトレジストを滴下した後はシャッタ
ー（１０）は閉状態となる。In addition, the photoresist is dropped onto the wafer 1) from the resist nozzle (9) and the valve (15b) connected to the inert gas or clean air supply 1 (15a) connected to the lid (6). The shutter (10) of the through hole (11) and the atmospheric gas from the atmospheric gas generator (
13) Keep the introduction valve (21) and other valves and shutters closed. Therefore, the decompression exhaust valve (
12b) and operate the decompression/exhaust device (12a) to gradually evacuate the coating space (8) until the desired depressurization state is reached, for example, 700.
Evacuate to ~600 mm Hg. When the desired pressure is reached, the valve (12b) of the vacuum exhaust line is closed. That is, the application space (8) becomes an airtight chamber maintained at a desired reduced pressure state. Next, the valve (21) that opens and closes between the solvent atmosphere space (19) and the coating space (8) of the atmospheric gas generator (16) is opened, and the reduced pressure state value of the coating space (8) is set.
A stable saturated solvent atmosphere gas (13) of uniform concentration in the solvent atmosphere space (19) flows into the application space (8) so as to supplement the pressure difference with respect to atmospheric pressure, for example, 700-600 mmHg. Further, clean air or inert gas in an amount corresponding to the solvent atmosphere gas (13) that has flowed in is introduced from the bubbler (22). At this time, since there is a relationship between solvent atmosphere space (19)>> application space (8), the amount of gas introduced from the bubbler (22) is the solvent atmosphere gas (13) i! Uniformity of one degree is not disturbed. Therefore, the inside of the coating space (8) is uniformly filled from every corner with the saturated solvent atmosphere gas having a uniform concentration and is at atmospheric pressure. Here, the atmospheric gas introduction line valve (21)
Close. Next, the resist nozzle (9) is automatically set in the resist coating through hole (11) located at the center of the lid (6) by a robot mechanism (not shown) or the like. The shutter (1) provided in the through hole (11)
0) is opened for a predetermined time, and photoresist is dripped onto the wafer (1) from the resist nozzle (9). After dropping, the resist nozzle (9) returns to a predetermined position outside the wafer (1) and waits until the next photoresist dropping period. Therefore, after dropping the photoresist, the shutter (10) is in a closed state.
そして、モータ（３）を所定の速度例えば７０００〜１
００００回転／分で高速に回転させ、フォトレジストを
ウェハ（１）全面に分散塗布する。Then, the motor (3) is set to a predetermined speed, for example, 7000 to 1
The photoresist is dispersed and coated over the entire surface of the wafer (1) by rotating at a high speed of 0,000 rpm.
このスピンコードは最初低速回転し、途中高速回転に切
り換えてもよい。この時、塗布空間（８）内は均一な濃
度の例えば溶媒雰囲気分圧８０％以上の飽和溶媒雰囲気
ガス（１３）で充されているため、ウェハ（１）の回転
による気流の流れ等が生じても、何等溶媒雰囲気ガス濃
度に影響は無く、分散中のフォトレジスト内の溶媒の蒸
発は非常に少なく、また蒸発するにしても均一に蒸発す
るためフォトレジストの粘性の変化はほとんど無く、ウ
ェハ（１）には均一な塗布膜が形成される。また滴下す
るフォトレジストの量も、フォトレジストの溶媒の蒸発
が非常に少なく粘性の変化がほとんどないためフォトレ
ジストののびも良く、従来よりも少ないレジスト量で塗
布膜きる。また、上記例では、フォトレジストを滴下し
た後、ウェハ（１）をモータ（３〉により高速回転した
が、先にモータ（３）によりウェハ（１）を高速回転し
た後、フォトレジストを滴下しても良い。次に、ウェハ
（１）面上に均一に塗布されたフォトレジストを乾燥さ
せるため不活性ガスまたはクリーンエアー供給Ｒ（１５
ａ ）ラインノバルブ（１５ｂ）を開き、不活性ガスま
たはクリーンエアーを塗布空間（８）内に導入すると同
時に、減圧排気装置（１２ａ）を働かせ塗布空間（８）
内の溶媒雰囲気ガス（１３）を排気し、不活性ガスまた
はクリーンエアーに置換し、均一に塗布されたフォトレ
ジスト膜の乾燥を行う。あるいは、蓋体（６）を図示し
ない駆動装置により上昇させ、直接塗布空間（８）を大
気空間に開放し、均一に塗布されたフォトレジスト膜の
乾燥をしても良い。そして、ウェハ（１）のフォトレジ
スト膜乾燥後、モータ（３〉の回転を停止する。次に、
蓋体（６）及び下カップ（５）を図示しない駆動装置に
より各々上及び下方向に移動する。そして外カップ（４
）と下カップ（δ〉との間隙（７）を通り、外カップ（
４）に飛散し外カップ（４）の下部に溜ったフォトレジ
ストやミスト等を図示しない配管を介して排ｗする。ま
た、塗布空間（８）内の残留溶媒雰囲気ガス（１３）等
の排気を行う。そして、図示しないロボット装置または
マニュアル操作によりチャック（２）上に載置されたウ
ェハ（１）を取り出し塗布操作が終了する。This spin code may rotate at low speed at first and then switch to high speed rotation midway through. At this time, since the coating space (8) is filled with a saturated solvent atmosphere gas (13) having a uniform concentration, for example, a solvent atmosphere partial pressure of 80% or more, air currents etc. occur due to the rotation of the wafer (1). However, the evaporation of the solvent in the photoresist during dispersion is extremely small, and even if it evaporates, it evaporates uniformly, so there is almost no change in the viscosity of the photoresist, and the wafer (1) A uniform coating film is formed. Also, regarding the amount of photoresist that is dropped, the evaporation of the photoresist solvent is very small and there is almost no change in viscosity, so the photoresist spreads well and can be coated with a smaller amount of resist than conventional methods. In the above example, after dropping the photoresist, the wafer (1) was rotated at high speed by the motor (3), but after the wafer (1) was first rotated at high speed by the motor (3), the photoresist was dropped. Next, an inert gas or clean air supply R (15
a) Open the line valve (15b) and introduce inert gas or clean air into the coating space (8), and at the same time operate the decompression exhaust device (12a) to drain the coating space (8).
The solvent atmosphere gas (13) inside is exhausted and replaced with inert gas or clean air, and the uniformly coated photoresist film is dried. Alternatively, the lid (6) may be raised by a drive device (not shown) to directly open the coating space (8) to the atmosphere, and the uniformly coated photoresist film may be dried. After drying the photoresist film on the wafer (1), the rotation of the motor (3) is stopped.Next,
The lid (6) and the lower cup (5) are moved upward and downward, respectively, by a drive device (not shown). and the outer cup (4
) and the lower cup (δ〉), passing through the gap (7) between the outer cup (
4) The photoresist, mist, etc. that are scattered and accumulated in the lower part of the outer cup (4) are discharged through a pipe (not shown). Further, residual solvent atmosphere gas (13) and the like in the coating space (8) are exhausted. Then, the wafer (1) placed on the chuck (2) is taken out by a robot device (not shown) or by manual operation, and the coating operation is completed.
上記実施例では、気密容器を外カップ（４）と下カップ
（５）及び蓋体（６）で構成したが第２図に示すように
気密容器をカップ一体型にし蓋体（６）を上下動する構
造（第２ａ図）あるいは外カップ（４）が上下動し、蓋
体も上下動する構造（第２ｂ図）でも良い。また雰囲気
ガス発生装置の雰囲気ガス温度と塗布部（０）の塗布空
間（８）との温度差は少ない事が望ましく塗布部及び雰
囲気ガス発生装置及びこの間の配管の温度をコントロー
ルする機能を持たせてもよい。また、上記実施例では雰
囲気ガス発生装置（１６）にバブラー（２２）を設け、
塗布空間（８）へ流れ込んだ量の気体を補っていたが、
溶媒雰囲気空間（１９）へ配管等を設け、直接不活性ガ
スやクリーンエアーを補充してもよい。In the above embodiment, the airtight container was composed of an outer cup (4), a lower cup (5), and a lid (6), but as shown in FIG. A movable structure (FIG. 2a) or a structure in which the outer cup (4) moves up and down and the lid also moves up and down (FIG. 2b) may be used. In addition, it is desirable that the temperature difference between the atmospheric gas temperature of the atmospheric gas generator and the coating space (8) of the coating section (0) be small. It's okay. Further, in the above embodiment, the atmospheric gas generator (16) is provided with a bubbler (22),
Although the amount of gas that flowed into the application space (8) was compensated for,
A pipe or the like may be provided to the solvent atmosphere space (19) to directly replenish inert gas or clean air.
本実施例によれば、塗布部を形成する気密容器内を予め
定められた圧力値に一度減圧排気した後、排気を停止し
た状態で予め用意した均一な濃度の飽和溶媒雰囲気ガス
を流入させ、この飽和溶媒ガス雰囲気中でフォトレジス
ト塗布を行うため、従来に比べ小量のフォトレジスト量
で均一な塗布膜をウェハ表面に形成する事ができる。According to this embodiment, after once decompressing and evacuating the inside of the airtight container that forms the application area to a predetermined pressure value, a saturated solvent atmosphere gas of a uniform concentration prepared in advance is introduced while the evacuation is stopped. Since photoresist coating is performed in this saturated solvent gas atmosphere, a uniform coating film can be formed on the wafer surface with a smaller amount of photoresist than in the past.
（発明の効果）
本発明によれば、気密容器で形成された塗布部を減圧排
気した後、排気を停止した状態で均一な濃度の溶媒雰囲
気ガスを均一に充満し回転塗布することにより、均一な
塗布膜を形成する効果が得られる。(Effects of the Invention) According to the present invention, after the application area formed in an airtight container is evacuated under reduced pressure, it is uniformly filled with a solvent atmosphere gas of a uniform concentration while the evacuation is stopped, and then the application area is uniformly applied by rotation. The effect of forming a thick coating film can be obtained.
第１図は塗布装置の構成図、第２図は第１図塗布装置の
気密容器の他の実施例説明図である。
４９．外カップ ５１．下カップ
６０．蓋体 ８６．塗布空間
１２０．減圧排気孔 １４０．雰囲気ガス導入孔１９１
．溶媒雰囲気空間FIG. 1 is a block diagram of the coating apparatus, and FIG. 2 is an explanatory diagram of another embodiment of the airtight container of the coating apparatus shown in FIG. 49. Outer cup 51. Lower cup 60. Lid body 86. Application space 120. Decompression exhaust hole 140. Atmospheric gas introduction hole 191
．． Solvent atmosphere space
Claims (1)
られた圧力値に減圧排気した後、排気を停止した状態で
前記レジストを構成する溶媒雰囲気ガスを前記気密容器
内に流入させ、前記溶媒雰囲気ガスで置換した後、この
溶媒雰囲気ガス中でレジストの塗布を行う事を特徴とす
るレジストの塗布方法。The object to be coated is placed in an airtight container, and the inside of the airtight container is decompressed and evacuated to a predetermined pressure value, and then, while the evacuation is stopped, a solvent atmosphere gas constituting the resist is allowed to flow into the airtight container. A resist coating method, which comprises replacing the solvent atmosphere with a solvent atmosphere gas, and then coating the resist in this solvent atmosphere gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63275767A JP2796812B2 (en) | 1988-10-31 | 1988-10-31 | Resist coating method and coating apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63275767A JP2796812B2 (en) | 1988-10-31 | 1988-10-31 | Resist coating method and coating apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02122520A true JPH02122520A (en) | 1990-05-10 |
| JP2796812B2 JP2796812B2 (en) | 1998-09-10 |
Family
ID=17560108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63275767A Expired - Lifetime JP2796812B2 (en) | 1988-10-31 | 1988-10-31 | Resist coating method and coating apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2796812B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06262125A (en) * | 1992-10-30 | 1994-09-20 | Internatl Business Mach Corp <Ibm> | Spin coating method and device |
| JPH07169680A (en) * | 1993-08-30 | 1995-07-04 | Semiconductor Syst Inc | Spin coating device and method of suchas wafer |
| US5591264A (en) * | 1994-03-22 | 1997-01-07 | Sony Corporation | Spin coating device |
| KR100239751B1 (en) * | 1996-12-06 | 2000-01-15 | 윤종용 | Spin coating apparatus |
| JP2000189883A (en) * | 1994-08-08 | 2000-07-11 | Tokyo Electron Ltd | Method and apparatus for forming coating film |
| US7101593B2 (en) | 2000-04-25 | 2006-09-05 | Matsushita Electric Industrial Co., Ltd. | Method for producing a disk-shaped substrate and method for producing an optical disk |
| KR100830394B1 (en) * | 2001-12-14 | 2008-05-20 | 삼성전자주식회사 | Spin coating apparatus |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5165882A (en) * | 1974-12-05 | 1976-06-07 | Sony Corp | Fuotorejisutono tofuhoho |
| JPS6324621A (en) * | 1986-07-16 | 1988-02-02 | Nec Corp | Coating applicator of photoresist |
| JPS63119531A (en) * | 1986-11-07 | 1988-05-24 | Mitsubishi Electric Corp | Photoresist coater in manufacture of semiconductor |
-
1988
- 1988-10-31 JP JP63275767A patent/JP2796812B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5165882A (en) * | 1974-12-05 | 1976-06-07 | Sony Corp | Fuotorejisutono tofuhoho |
| JPS6324621A (en) * | 1986-07-16 | 1988-02-02 | Nec Corp | Coating applicator of photoresist |
| JPS63119531A (en) * | 1986-11-07 | 1988-05-24 | Mitsubishi Electric Corp | Photoresist coater in manufacture of semiconductor |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06262125A (en) * | 1992-10-30 | 1994-09-20 | Internatl Business Mach Corp <Ibm> | Spin coating method and device |
| JPH07169680A (en) * | 1993-08-30 | 1995-07-04 | Semiconductor Syst Inc | Spin coating device and method of suchas wafer |
| US5591264A (en) * | 1994-03-22 | 1997-01-07 | Sony Corporation | Spin coating device |
| JP2000189883A (en) * | 1994-08-08 | 2000-07-11 | Tokyo Electron Ltd | Method and apparatus for forming coating film |
| KR100239751B1 (en) * | 1996-12-06 | 2000-01-15 | 윤종용 | Spin coating apparatus |
| US7101593B2 (en) | 2000-04-25 | 2006-09-05 | Matsushita Electric Industrial Co., Ltd. | Method for producing a disk-shaped substrate and method for producing an optical disk |
| KR100830394B1 (en) * | 2001-12-14 | 2008-05-20 | 삼성전자주식회사 | Spin coating apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2796812B2 (en) | 1998-09-10 |
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