JPS6041255A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS6041255A
JPS6041255A JP58149058A JP14905883A JPS6041255A JP S6041255 A JPS6041255 A JP S6041255A JP 58149058 A JP58149058 A JP 58149058A JP 14905883 A JP14905883 A JP 14905883A JP S6041255 A JPS6041255 A JP S6041255A
Authority
JP
Japan
Prior art keywords
region
electrode
cell
voltage
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58149058A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0427708B2 (enrdf_load_html_response
Inventor
Satoru Maeda
哲 前田
Hiroshi Iwai
洋 岩井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58149058A priority Critical patent/JPS6041255A/ja
Priority to US06/630,830 priority patent/US4872042A/en
Publication of JPS6041255A publication Critical patent/JPS6041255A/ja
Publication of JPH0427708B2 publication Critical patent/JPH0427708B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Semiconductor Memories (AREA)
JP58149058A 1983-07-20 1983-08-15 半導体記憶装置 Granted JPS6041255A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58149058A JPS6041255A (ja) 1983-08-15 1983-08-15 半導体記憶装置
US06/630,830 US4872042A (en) 1983-07-20 1984-07-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58149058A JPS6041255A (ja) 1983-08-15 1983-08-15 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS6041255A true JPS6041255A (ja) 1985-03-04
JPH0427708B2 JPH0427708B2 (enrdf_load_html_response) 1992-05-12

Family

ID=15466745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58149058A Granted JPS6041255A (ja) 1983-07-20 1983-08-15 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS6041255A (enrdf_load_html_response)

Also Published As

Publication number Publication date
JPH0427708B2 (enrdf_load_html_response) 1992-05-12

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