JPS6037717A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6037717A
JPS6037717A JP58147015A JP14701583A JPS6037717A JP S6037717 A JPS6037717 A JP S6037717A JP 58147015 A JP58147015 A JP 58147015A JP 14701583 A JP14701583 A JP 14701583A JP S6037717 A JPS6037717 A JP S6037717A
Authority
JP
Japan
Prior art keywords
substrate
semiconductor substrate
cooled
cooling
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58147015A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0572096B2 (enExample
Inventor
Juri Kato
樹理 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP58147015A priority Critical patent/JPS6037717A/ja
Publication of JPS6037717A publication Critical patent/JPS6037717A/ja
Publication of JPH0572096B2 publication Critical patent/JPH0572096B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P10/00—

Landscapes

  • Recrystallisation Techniques (AREA)
JP58147015A 1983-08-10 1983-08-10 半導体装置の製造方法 Granted JPS6037717A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58147015A JPS6037717A (ja) 1983-08-10 1983-08-10 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58147015A JPS6037717A (ja) 1983-08-10 1983-08-10 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP26628392A Division JPH05251377A (ja) 1992-10-05 1992-10-05 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6037717A true JPS6037717A (ja) 1985-02-27
JPH0572096B2 JPH0572096B2 (enExample) 1993-10-08

Family

ID=15420610

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58147015A Granted JPS6037717A (ja) 1983-08-10 1983-08-10 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6037717A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173324A (ja) * 1984-09-17 1986-04-15 Dainippon Screen Mfg Co Ltd 熱処理装置
JPS6235517A (ja) * 1985-08-08 1987-02-16 Anelva Corp 基体処理装置
US4752592A (en) * 1985-11-29 1988-06-21 Matsushita Electric Industrial Co., Ltd. Annealing method for compound semiconductor substrate
JP2001297995A (ja) * 2000-04-13 2001-10-26 Nec Corp 回路製造方法および装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5872837U (ja) * 1981-11-10 1983-05-17 株式会社日立国際電気 減圧気相成長装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5872837U (ja) * 1981-11-10 1983-05-17 株式会社日立国際電気 減圧気相成長装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6173324A (ja) * 1984-09-17 1986-04-15 Dainippon Screen Mfg Co Ltd 熱処理装置
JPS6235517A (ja) * 1985-08-08 1987-02-16 Anelva Corp 基体処理装置
US4752592A (en) * 1985-11-29 1988-06-21 Matsushita Electric Industrial Co., Ltd. Annealing method for compound semiconductor substrate
JP2001297995A (ja) * 2000-04-13 2001-10-26 Nec Corp 回路製造方法および装置

Also Published As

Publication number Publication date
JPH0572096B2 (enExample) 1993-10-08

Similar Documents

Publication Publication Date Title
US4581520A (en) Heat treatment machine for semiconductors
TWI267091B (en) Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths
TWI660409B (zh) 熱處理方法及熱處理裝置
US12341031B2 (en) Light irradiation type heat treatment method and heat treatment apparatus
TW202109672A (zh) 熱處理裝置及熱處理裝置之洗淨方法
US20040023504A1 (en) Hot plate annealing
US20230047855A1 (en) Light irradiation type heat treatment method and heat treatment apparatus
JPS6037717A (ja) 半導体装置の製造方法
JP2019129273A (ja) 熱処理方法および熱処理装置
US12283498B2 (en) Light irradiation type heat treatment apparatus
JP2005167005A (ja) 半導体基板の熱処理方法、半導体装置の製造方法、及び熱処理装置
CN111799171B (zh) 热处理方法及热处理装置
TWI720683B (zh) 熱處理方法及熱處理裝置
CN110211894B (zh) 热处理方法
JPS60193343A (ja) 熱処理装置
JP4481528B2 (ja) 半導体製造装置及び半導体装置の製造方法
JP3876665B2 (ja) 光照射式加熱処理装置
JP2979550B2 (ja) ランプアニール装置
TW202029346A (zh) 熱處理方法及熱處理裝置
JPS6154632A (ja) 絶縁膜形成方法
JPS63271922A (ja) 熱処理装置
JPS59121821A (ja) 加熱器組立体
JPS59121832A (ja) 半導体ウエハ−を光照射で加熱する方法
JP2018098315A (ja) 熱処理方法および熱処理装置
JPS593934A (ja) 半導体ウエハ−を光照射で加熱する方法