JPS6029747A - 電子デバイス用マスク基板 - Google Patents
電子デバイス用マスク基板Info
- Publication number
- JPS6029747A JPS6029747A JP58138459A JP13845983A JPS6029747A JP S6029747 A JPS6029747 A JP S6029747A JP 58138459 A JP58138459 A JP 58138459A JP 13845983 A JP13845983 A JP 13845983A JP S6029747 A JPS6029747 A JP S6029747A
- Authority
- JP
- Japan
- Prior art keywords
- mask substrate
- glass
- substrate
- borders
- base plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 claims abstract description 49
- 239000002253 acid Substances 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 claims abstract description 5
- 229920005989 resin Polymers 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 80
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000003486 chemical etching Methods 0.000 claims description 17
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- 238000005498 polishing Methods 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 238000005530 etching Methods 0.000 abstract description 5
- 238000000576 coating method Methods 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000006121 base glass Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 9
- 229910052804 chromium Inorganic materials 0.000 description 9
- 239000011651 chromium Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000011859 microparticle Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/60—Substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58138459A JPS6029747A (ja) | 1983-07-28 | 1983-07-28 | 電子デバイス用マスク基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58138459A JPS6029747A (ja) | 1983-07-28 | 1983-07-28 | 電子デバイス用マスク基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6029747A true JPS6029747A (ja) | 1985-02-15 |
| JPH049292B2 JPH049292B2 (https=) | 1992-02-19 |
Family
ID=15222513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58138459A Granted JPS6029747A (ja) | 1983-07-28 | 1983-07-28 | 電子デバイス用マスク基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6029747A (https=) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004051369A1 (ja) * | 2002-12-03 | 2004-06-17 | Hoya Corporation | フォトマスクブランク、及びフォトマスク |
| WO2010092937A1 (ja) * | 2009-02-13 | 2010-08-19 | Hoya株式会社 | マスクブランク用基板、マスクブランクおよびフォトマスク |
| JP2010280544A (ja) * | 2009-06-05 | 2010-12-16 | Tosoh Corp | 研磨した石英ガラス基板の洗浄方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55146928A (en) * | 1979-05-02 | 1980-11-15 | Ulvac Corp | Manufacturing of photomask substrate |
| JPS59172647A (ja) * | 1983-03-22 | 1984-09-29 | Nec Corp | マスクプレ−トの製造方法 |
-
1983
- 1983-07-28 JP JP58138459A patent/JPS6029747A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55146928A (en) * | 1979-05-02 | 1980-11-15 | Ulvac Corp | Manufacturing of photomask substrate |
| JPS59172647A (ja) * | 1983-03-22 | 1984-09-29 | Nec Corp | マスクプレ−トの製造方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004051369A1 (ja) * | 2002-12-03 | 2004-06-17 | Hoya Corporation | フォトマスクブランク、及びフォトマスク |
| CN100580549C (zh) | 2002-12-03 | 2010-01-13 | Hoya株式会社 | 光掩模坯料和光掩膜 |
| WO2010092937A1 (ja) * | 2009-02-13 | 2010-08-19 | Hoya株式会社 | マスクブランク用基板、マスクブランクおよびフォトマスク |
| JP4839411B2 (ja) * | 2009-02-13 | 2011-12-21 | Ｈｏｙａ株式会社 | マスクブランク用基板、マスクブランクおよびフォトマスク |
| CN102317860A (zh) * | 2009-02-13 | 2012-01-11 | Hoya株式会社 | 掩模板用基板、掩模板以及光掩模 |
| JP2010280544A (ja) * | 2009-06-05 | 2010-12-16 | Tosoh Corp | 研磨した石英ガラス基板の洗浄方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH049292B2 (https=) | 1992-02-19 |
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