JPS6029468A - Formation of film - Google Patents

Abstract

PURPOSE:To enable reduction in the size of a device and to improve the quality of a thin film to be formed in the stage of releasing sputtering particles from a target by the ion from an ion gun and forming the thin film on a substrate by deflecting the ion by an electromagnetic field and bringing the ion into collision against the target. CONSTITUTION:A taget 11 is placed between the two ion guns 12 and 12 and a substrate 13 is disposed in the position where the substrate faces the target in the stage of forming a thin film 10 having the same quality as the quality of the target 11 on the substrate 13 by a sputtering method. Electromagnets 14, 14 are attached on the rear surface side of the target 11 in this case and the flow of the Ar ion 16 released from the gun 12 is deflected 180 deg. by the electromagnetic field of the magnet 14 and the ion is brought into collision against the target 11. The sputtered particles 15 of the target material released from the target 11 are deposited on the surface of the substrate 13 thereby forming the film 10. The entire part of the sputtering device is made smaller in size and the film 10 having high quality is obtd.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a film forming method using ion milling technology.

[Technical background of the invention]

Conventionally, a film forming method using an ion gun has been carried out as shown in FIG. 1, for example. First, from ion @1, for example, A
R ions 2 are emitted and made to collide with a target 3 provided opposite to the ion gun 1. Ar ion 2 is ter 1'
Knock out Snog ivy particles 4 from Tsuto 3. The footer particles 4 are deposited on a substrate 5 provided opposite the target 3 to form a predetermined thin film.

[Problems with background technology]

In such a conventional method, the target 3 needs to be placed facing both the ion gun 1 and the substrate 5. Therefore, the targut 3, the ion gun 1, the substrate 5
There was a problem that the installation space could not be made smaller, resulting in a larger device. Furthermore, since the ion gun 1 is provided opposite the target 3, sputtered particles tend to enter the ion gun 1, causing contamination and electrical radiation. As a result, there was a problem that a high quality thin film could not be formed.

[Purpose of the invention]

An object of the present invention is to provide a film forming method that can easily form a high quality thin film using a shed apparatus.

[Summary of the invention]

The present invention adopts a method of depositing only the mother ivy particles on the substrate by colliding the ions with a target while deflecting them, thereby making it possible to easily form a high-quality thin film using a small device. It depends on the formation method.

[Embodiments of the invention]

Embodiments of the present invention will be described below with reference to the drawings.

First, the thin film 1 to be assembled and formed as shown in FIG.
A target 11 made of zero material is prepared, and an ion gun 12 is installed around the target 11. A substrate 13, which is an object to be processed, is placed opposite the surface of the target 11 from which the ivy particles are emitted. An electromagnet 14 is arranged behind the back surface of the substrate 13, which is opposite to the sputtered particle emitting surface.

Thus, for example, Ar ions I6 are emitted from the ion gun 12 as ions for ejecting the sputtered particles 15.

Next, a predetermined current is supplied to the electromagnet 14 in a controlled manner to generate an electromagnetic field. By changing the strength of this electromagnetic field by controlling the current, the flow of the Ar ions 16 is deflected, and the Ar ions 16 collide with the sputtered particle emitting surface of the target 11 in a scanning manner. Here, the acceleration voltage of the Ar ions 16 is desirably set in the range of 400 to 500 V in consideration of the sulfur efficiency. When Ar ions 16 collide with the sputtered particle emission surface,
Target particles 15 are knocked out from the target 11,
The ejected target particles 15 are deposited on the surface of the substrate 13 to form a thin Mzo.

In this way, according to this film forming method, it is possible to deflect the Ar ions 16 to collide with the target 11, and to set the scattering direction of the sputtered particles 15 and the flow of the Ar ions 16 flowing into the target 11 in opposite directions. can. As a result, it is possible to prevent the particles 15 from entering the ion gun 12 and causing contamination and electrical shorts, thereby making it possible to form a thin film 10 of extremely high quality.

Further, since the target 11 only needs to face the substrate 13, the target 11, the substrate 13, the ion gun I2,
The space for arranging the electromagnet I4 can be made as small as possible to provide a compact film forming apparatus.

The ion gun 12 is arranged between the target 11 and the substrate 130 as shown in FIG. It may be made to collide with the target 12.

In addition, as shown in FIG.
is provided so as to surround the space between the target 11 and the substrate 13,
It is also possible to use a device in which an anode voltage is applied to change the electric field.

Further, as shown in FIG. 5, an ion gun 19h is provided to surround the target 18, and an ion gun 19b is also provided at the center of the target 18, and the substrate 13 is placed facing the target I8. - The deposition process of the ivy particles Z5 and the etching process using Ar ions 20 may be performed simultaneously to form an extremely high quality thin film lo. In other words, the A released from the outer ion gun 19m
The r ions 16 are deflected by a magnet 14 and then collide with a target 18 to knock out sputtered particles 15 and deposit them on a substrate 13 placed opposite to the target 18. During this deposition process, Ar ions 20, for example, are simultaneously emitted toward the substrate 13 from the ion gun 19b in the center to etch the deposit M formed by the sputtered particles 15. At this time, by setting the deposition rate and etching rate appropriately,
A high quality thin film 10 can be formed with good stain coverage on a substrate 13 whose narrow surface is uneven. The ratio of the deposition rate to the etching rate determines the type of thin film 10 to be formed.

It is desirable to set it according to the film thickness, the degree of unevenness of the surface of the substrate 13, etc. For example, when forming an SiO2 film on the substrate 13 whose surface has irregularities of about 1 μm, it is desirable to set the ratio of the deposition rate to the etching rate to 10=1.

Further, as shown in FIG. 6, the target 2I is made of different materials, for example, the center is a W target 22 and the surrounding area is an At target 23, and Ar ions, for example, emitted from the ion gun z2 are set. By sequentially deflecting the number 16, a plurality of thin films 10*, 10b, and 10hft of different materials may be formed on the substrate 13. That is, first, the Ar ions I6 are deflected at a large deflection angle and collided with the outer peripheral part of the target 21 to knock out At sputtered particles 15, and the substrate Z3
Upper V? - Form an At film of 10 m. Next, the deflection angle is made small and the Ar ions Z6 are made to collide with the center of the target 21, thereby knocking out the W stripes 15' and forming ωQ l Ob on the At film 10a. After that, the deflection angle is increased again to cause Ar ions 16 to collide with the outer periphery of the target 2z, and the sputtered At particles I5 are transferred to the ω film 10.
b to form a three-layer thin film 10 on the substrate 13.

Further, the flow direction of the sputtered particles 15 may be set in any direction, such as a vertical direction or a vertical direction. Furthermore, any shape may be used for the 2.1.

〔Effect of the invention〕

As explained above, the jlK forming method according to the present invention has remarkable effects such as being able to easily form a high quality thin film with a small device.

[Brief explanation of the drawing]

Fig. 1 is an explanatory diagram showing a conventional film forming method, Figs. 2 and 3 are explanatory diagrams showing an embodiment of the present invention using an electromagnet as a deflecting means, and Fig. 4 is an explanatory diagram showing a conventional film forming method. FIG. 5 is an explanatory diagram showing an embodiment of the present invention using a plate. FIG. 5 is an explanatory diagram showing an embodiment of the present invention in which a target is surrounded by an ion gun. FIG. FIG. 2 is an explanatory diagram showing an embodiment of the present invention. 10... Thin film, 11.18.21... Target,
12.19a, 19b...Ion gun, Z3...Substrate, 14...Electromagnet, 15...S/mother ivy particle, 16
゜20... Ar ion, I7... Deflection plate, 22...
・At target, 23...W target. Applicant's Representative Patent Attorney Takehiko Suzue Figure 1 Figure 2 Figure 3 Figure 11 1 Figure 4 Figure 5 Figure 6

Claims (1)

[Claims] (Predetermined ions are emitted from an ion gun, the ions are deflected and collided with a target, and sputtered particles ejected from the target by the collision of the ions are sent to the target at a predetermined interval. A method for forming a film, characterized in that the means for deflecting ions is an electromagnetic field, and the ions are (3) The film forming method according to claim 1 or 2, wherein the ion deflection angle is 90 to 180°. (4) The ion gun is arranged so as to surround the target. Claims 1, 2, or 3. The film forming method according to claim 3. (5) A plurality of targets having different compositions or materials are arranged. A film forming method according to claim 1, 2, 3 or 4.