JPS6028226A - Manufacture of thin-film transistor array - Google Patents

Manufacture of thin-film transistor array

Info

Publication number
JPS6028226A
JPS6028226A JP13619283A JP13619283A JPS6028226A JP S6028226 A JPS6028226 A JP S6028226A JP 13619283 A JP13619283 A JP 13619283A JP 13619283 A JP13619283 A JP 13619283A JP S6028226 A JPS6028226 A JP S6028226A
Authority
JP
Japan
Prior art keywords
electrodes
voltage
amorphous
power supply
blank material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13619283A
Other languages
Japanese (ja)
Inventor
Tadashi Sekiguchi
忠 関口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP13619283A priority Critical patent/JPS6028226A/en
Publication of JPS6028226A publication Critical patent/JPS6028226A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)

Abstract

PURPOSE:To lower a heating temperature, and to obtain a stable amorphous Si thin-film by applying DC voltage to one of a pair of discharge electrodes when a blank material, to which amorphous Si is to be formed, is placed on a glass substrate, the electrodes are faced opposed to the surface of the blank material, electricity is discharged, and the blank material is brought to an amorphous state. CONSTITUTION:An SiCl4 blank material for forming amorphous Si is placed on a glass substrate 4, and a pair of electrodes 2 and 3 mutually running parallel at regular intervals from the blank are faced to the surface of the blank. The electrodes 2 and 3 are connected to a high-frequency power supply 1, and arc discharge is generated between these electrodes to change the blank material into an amorphous Si thin-film. In the constitution, a plus pole for a DC power supply 5 is connected previously to one electrode 3, and DC voltage is applied on a discharge. Accordingly, high-frequency voltage is increased up to a DC voltage level from the power supply 5, and sufficiently large discharge energy is generated without resulting in a temperature rise even by the small high-frequency power supply.

Description

【発明の詳細な説明】 本発明は、液晶表示装置等に用いられる薄膜トランジス
タアレイの製造方法に関する０従来から、スイッチング
素子をマトリクス状に配列した薄膜トランジスタアレイ
を用いて、液晶を直接にスイッチ駆動するアクティブマ
トリクス表示が広く利用される様になっている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a thin film transistor array used in a liquid crystal display device, etc. Conventionally, a thin film transistor array in which switching elements are arranged in a matrix is used to directly switch drive a liquid crystal. Matrix displays are becoming widely used.

そしてこの表示のために、ガラス基板やセラミック基板
の上に薄膜トランジスタ（以下ＴＰＴという）アレイを
形成し、液晶層や透明電極を設けたガラス板を順次積層
した液晶表示装置が作られる様になった。この液晶表示
装置では、基板の面積に制約がなく・画面サイズを自由
に選択できるというメリットがある０また。ガラス基板
上にＴＰＴのアレイを設けた表示電極基板は光を透過す
るので、反射形または透過形のいずれにも使用でき、し
かも色フィルタの併用によりカラー画像が表示できるな
どの利点が得られる。In order to display this information, liquid crystal display devices were manufactured by forming a thin film transistor (hereinafter referred to as TPT) array on a glass substrate or ceramic substrate, and sequentially stacking glass plates with a liquid crystal layer and transparent electrodes. . This liquid crystal display device has the advantage that there is no restriction on the area of the substrate and the screen size can be freely selected. Since a display electrode substrate in which a TPT array is provided on a glass substrate transmits light, it can be used in either a reflective type or a transmissive type, and has the advantage that a color image can be displayed by using a color filter in combination.

しかしながら、かかる従来の液晶表示装置では、ガラス
基板等の上に、高周波放電や静電蒸着などを用いて２０
０度〜３００度Ｃの低温でアモルファスシリコンを成長
させてＴＦＴアレイを形成するものであったため、その
生長工程中に高周波による温度上昇やその他の外的影響
例えば機械的振動等を受けて薄膜が損傷または剥離しや
すぐなり、また単結晶であるためもともと欠陥が生じ易
（、アレイとしての成功率が２５％程度と悪くなってい
た。すなわち、低電圧放電によるアモルファスシリコン
の成長やガラス基板に対する付着が不完全になると力う
欠点があった。However, in such conventional liquid crystal display devices, 20%
Since TFT arrays were formed by growing amorphous silicon at low temperatures ranging from 0 to 300 degrees Celsius, the thin film could be damaged by temperature increases due to high frequencies or other external influences such as mechanical vibration during the growth process. It is easily damaged or peeled off, and since it is a single crystal, it is inherently prone to defects (the success rate as an array was about 25%).In other words, the growth of amorphous silicon due to low voltage discharge and There was a drawback that it would be strong if the adhesion was incomplete.

本発明はかかる従来の欠点に着目して成されたものでア
シ、アモルファスシリコンの素材−４［せたガラス基板
に一対の放電電極を対向配置し、その放電電極に高周波
電源から高周波電圧を供給すると同時に、別に設けた他
の直流電源から直流電圧を供給する様にした薄膜トラン
ジスタアレイの製造方法を提供するものである。The present invention has been made by focusing on the drawbacks of the conventional art.A pair of discharge electrodes are arranged opposite to each other on a glass substrate made of amorphous silicon material, and a high frequency voltage is supplied to the discharge electrodes from a high frequency power source. At the same time, the present invention provides a method for manufacturing a thin film transistor array in which a DC voltage is supplied from another DC power supply provided separately.

以下に、本発明の実施例を図面について具体的に説明す
る。Embodiments of the present invention will be specifically described below with reference to the drawings.

第１図（は本発明の方法を実施するだめのＴＦＴアレイ
製造に用いる高周波放電装置の概略回路図である。同図
に於いて、１はＳｉ′ｃｔ４などの素材を高周波炉内で
加熱させることによって、アモルファスシリコンを形成
させるための高周波電源であり、この高周波電源に一対
の放電電極２．３が接続されている。また、その放電電
極２．３に対向する部位にガラス基板４の一側面が対向
配置されている。また、電極３には所定電圧レベルの直
流電源５が接続されている０ この様な高周波放電装置によれば・ガラス基板４上に５
ＩＣｔ４の素材を載せ、両電極２・３間に高周波電圧を
印加することによって、そのガラス基板４上にアモルフ
ァスシリコンを成長させて、所望パターンのＴＦＴアレ
イを形成できるのであるが、上記高周波電圧は直流電源
５の直流電圧レベルまで持ち上げられ、従って、小さい
高周波電圧源にても温度上昇を招くことなく十分大きな
放電エネルギーを得ることができるものである。FIG. 1 is a schematic circuit diagram of a high-frequency discharge device used for manufacturing TFT arrays in which the method of the present invention is carried out. A pair of discharge electrodes 2.3 are connected to this high-frequency power supply.In addition, a portion of the glass substrate 4 is connected to a portion facing the discharge electrodes 2.3. In addition, a DC power source 5 having a predetermined voltage level is connected to the electrode 3.According to such a high frequency discharge device:
By placing the ICt 4 material and applying a high frequency voltage between both electrodes 2 and 3, amorphous silicon can be grown on the glass substrate 4 and a TFT array with a desired pattern can be formed. The voltage can be raised to the DC voltage level of the DC power source 5, and therefore, even a small high frequency voltage source can obtain sufficiently large discharge energy without causing a temperature rise.

この結果、ガラス基板４上にＴＦＴアレイヲ確実かつ安
定に形成でき、特性の安定した液晶表示装置を大量かつ
ローコストに得ることができるものであり、温度上昇に
よるＴＦＴアレイの劣化を有効に抑えることができる０ 以上詳述した通り、本発明にかかる薄膜トランジスタ了
レイの製造方法によれば、ＴＦＴアレイを不必要に加熱
して劣化させることなく、ガラス基板上にアモルファス
シリコンの生成並びに付着を確実かつ安定に行わしめう
る等の実用上の効果が得られるものである０As a result, the TFT array can be reliably and stably formed on the glass substrate 4, and liquid crystal display devices with stable characteristics can be obtained in large quantities at low cost, and deterioration of the TFT array due to temperature rise can be effectively suppressed. Possible 0 As detailed above, according to the method for manufacturing a thin film transistor array according to the present invention, the formation and adhesion of amorphous silicon on a glass substrate can be reliably and stably achieved without unnecessary heating and deterioration of the TFT array. 0, which can provide practical effects such as being able to be used in

【図面の簡単な説明】[Brief explanation of drawings]

第１図は本発明の薄膜トランジスタアレイの製造方法を
示す説明図である０ １・・・高周波電源 ２．３・・・電極 ４・・・ガラス基板 ５・・・直流電源 特許出願人　関　口　忠FIG. 1 is an explanatory diagram showing the method for manufacturing a thin film transistor array of the present invention.

Claims (1)

【特許請求の範囲】[Claims] アモルファスシリコンの素材を載せたガラス基板に、一
対の放電電極をのぞませて、これらに高周波電圧を印加
すると同時に、更にこれらの放電電極に他の直流電源か
ら直流電圧を印加することによってアモルファスシリコ
ンを成長させ、上記ガラス基板上に薄膜トランジスタア
レイを形成する様にした薄膜トランジスタアレイの製造
方法０A pair of discharge electrodes are placed on the glass substrate on which the amorphous silicon material is placed, and a high frequency voltage is applied to these electrodes.At the same time, a DC voltage is also applied to these discharge electrodes from another DC power source. Method 0 for manufacturing a thin film transistor array in which a thin film transistor array is formed on the glass substrate by growing
JP13619283A 1983-07-26 1983-07-26 Manufacture of thin-film transistor array Pending JPS6028226A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13619283A JPS6028226A (en) 1983-07-26 1983-07-26 Manufacture of thin-film transistor array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13619283A JPS6028226A (en) 1983-07-26 1983-07-26 Manufacture of thin-film transistor array

Publications (1)

Publication Number Publication Date
JPS6028226A true JPS6028226A (en) 1985-02-13

Family

ID=15169490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13619283A Pending JPS6028226A (en) 1983-07-26 1983-07-26 Manufacture of thin-film transistor array

Country Status (1)

Country Link
JP (1) JPS6028226A (en)

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