CN202421717U

CN202421717U - Mask plate

Info

Publication number: CN202421717U
Application number: CN201220005245XU
Authority: CN
Inventors: 史大为; 郭建
Original assignee: Beijing BOE Optoelectronics Technology Co Ltd
Current assignee: BOE Technology Group Co Ltd
Priority date: 2012-01-06
Filing date: 2012-01-06
Publication date: 2012-09-05
Anticipated expiration: 2022-01-06

Abstract

The utility model provides a mask plate. The mask plate comprises an upper substrate and a lower substrate which are butted with each other, liquid crystal molecules which are packaged between the upper substrate and the lower substrate, and electrodes which are adhered to the outer surfaces of the upper substrate and the lower substrate and are symmetric vertically. By using the characteristics of the liquid crystal molecules, the liquid crystal molecules are packaged between the upper substrate and the lower substrate which are butted with each other, and the electrodes which are adhered to the outer surfaces of the upper substrate and the lower substrate and are symmetric vertically are selectively controlled by applying voltage to control the deflection of liquid crystals between the vertically-symmetric electrodes and realize complementary switching between a light-transmitting area and a light-tight area, so that the same mask plate is suitable for both positive photoresist and negative photoresist, the defect that the conventional mask plate is limited to the fixed types of photoresist is overcome, one plate can fulfill a plurality of aims, the space for designing the mask plate and selecting the photoresist is expanded, and the problems of the high manufacturing cost and the long production period of a mask and the like because of the replacement of the photoresist are solved.

Description

A kind of mask plate

Technical field

The utility model relates to LCD manufacturing technology field, relates in particular to a kind of mask plate.

Background technology

(Thin Film Transistor Liquid Crystal Display TFT-LCD) because of characteristics such as own vol are little, low in energy consumption, radiationless, has occupied leading position in current panel display apparatus market to thin-film transistor LCD device.

TFT-LCD is formed box by array base palte and color membrane substrates, the mutual gate line box signal wire of configuration definition pixel region across in array base palte, configuration pixel electrode and thin film transistor (TFT) in each pixel region; Drive signal is applied on the gate line, and view data is applied to pixel electrode through signal wire; On color membrane substrates, dispose black matrix, make light can not see through the zone beyond the pixel electrode; At each pixel region configuration colour filter, dispose public electrode on this basis again.Between array base palte and color membrane substrates, charge into liquid crystal; The voltage of the pixel electrode through aforesaid load driver signal and view data is controlled the deflection of liquid crystal; And then the power of control light, cooperate the function of color membrane substrates, on array base palte, demonstrate the image that will express.

Existing two kinds of photoresists commonly used are ultraviolet negative photoresist and ultraviolet positive photoresist; The advantage of ultraviolet negative photoresist is good, the high mass dryness fraction of antiacid alkali, adhesiveness, and shortcoming is that anti-plasma is weak, heat impedance is poor, resolution is low; The advantage of ultraviolet positive photoresist is that resolution is high, anti-dry etching property strong, good heat resistance, remove photoresist conveniently, and shortcoming is that film speed is slow, adhesiveness and bad mechanical property etc.

In TFT-LCD production photoetching process,, need to use the mask plate of polylith different layers according to the difference of technology; Though the figure complexity of each layer mask plate is different; But ultimate principle is identical: for using positive photoresist, the pattern that ultimate demand obtains need utilize the light tight district of mask plate to protect in exposure technology; The irradiation of avoiding light is just can be in developing process not dissolved to be fallen; That is to say that when utilizing positive photoresist, the figure of shading is the panel pattern that we need in the mask plate; Negative photoresist is just opposite with the situation of positive photoresist; Existing traditional conventional mask plate mainly comprises two parts: substrate and light-proof material; Here, be that example describes with passivation layer punching mask plate, its concrete structure is as shown in Figure 1, and substrate 1 can be high-purity, antiradar reflectivity, low-expansion quartz glass; Light non-transmittable layers 2 can be at first crossing the chromium layer of thick about 0.1um below substrate 1 through the method for sputter, passes through the operation such as exposure, development, etching of the array technology of similar TFT-LCD then, forms required figure, adds (pellicle) 3 that attach masking-out afterwards.When selecting positive photoresist, the pattern that utilizes this mask plate finally to obtain is identical with light non-transmittable layers 2, and is complementary with via hole; When selecting negative photoresist, the pattern that utilizes this mask plate finally to obtain is identical with via hole, and is complementary with light non-transmittable layers.

The Several Factors that influences photoresist comprises: homogeneity, sensitivity, resolution, process window size and shortcoming etc.The slip-stick artist generally can carry out comprehensive evaluation from above results of property when selecting photoresist, the product requirement of taking into account simultaneously, capacity of equipment and photoresist cost etc. carry out comprehensive consideration.Photoresist is in case selected; Design and making that will the limit mask plate; And the mask plate of making will permanently be applicable to the photoresist of a specific character, switch the type of photoresist like need, then need design and make mask plate again; Certainly will increase cost, prolong the production cycle, also increase the managerial complexity of mask plate.

The utility model content

In view of this, the fundamental purpose of the utility model is to provide a kind of mask plate, can overcome the shortcoming that existing mask plate is confined to a kind of photoresist of fixed type.

For achieving the above object, the technical scheme of the utility model is achieved in that

A kind of mask plate, said mask plate comprise each other involutory upper and lower substrate, be packaged in liquid crystal molecule between the said upper and lower substrate, be positioned at upper and lower outer surface of substrate and laterally zygomorphic electrode.

Wherein, said electrode comprises many to laterally zygomorphic electrode, lays respectively at non-overlapping copies between the electrode of upper substrate and infrabasal plate outside surface, and isolates through insulation course between the electrode.

Further, also comprise power supply, link to each other that said power supply is controlled the break-make of said electrode with said electrode.

Wherein, said electrode is indium tin oxide (ITO) film.

Wherein, said insulation course is a silicon nitride.

The utility model is through utilizing the characteristic of liquid crystal molecule; Encapsulated liquid crystal molecule between involutory each other upper and lower substrate; Optionally control through impressed voltage and to be attached at upper and lower outer surface of substrate and laterally zygomorphic electrode, and then control the liquid crystal deflection between the laterally zygomorphic electrode, realize that the complementation of photic zone and non-photic zone is switched; Make same mask plates both be applicable to positive photoresist; Be applicable to negative photoresist again, overcome the shortcoming of conventional mask plate limitation fixed type photoresist, realized that a plate uses more; Expand the space for the design of mask plate and the selection of photoresist, solved problems such as MASK cost of manufacture that the replacing because of photoresist causes and production cycle.

Description of drawings

Fig. 1 is the structural representation of existing mask plate;

Fig. 2 is the structural representation of the utility model mask plate;

Structural representation when Fig. 3 cuts off the power supply for the utility model mask plate;

Structural representation when Fig. 4 switches on for the utility model mask plate;

Fig. 5 is the structural representation of the utility model mask plate embodiment.

Reference numeral: 1-substrate; The 2-light non-transmittable layers; The 3-masking-out; The 4-liquid crystal molecule; The 5-electrode; The 6-insulation course; The 7-B electrode.

Embodiment

The basic thought of the utility model is: the characteristic of utilizing liquid crystal molecule; Encapsulated liquid crystal molecule between involutory each other upper and lower substrate; Optionally control through impressed voltage and to be attached at upper and lower outer surface of substrate and laterally zygomorphic electrode; And then control the liquid crystal deflection between the laterally zygomorphic electrode, realize that the complementation of photic zone and non-photic zone is switched, with the photoresist that is applicable to that positive negativity is dissimilar.

For the purpose, technical scheme and the advantage that make the utility model is clearer, below lift embodiment and with reference to accompanying drawing, to the utility model further explain.

Fig. 2 shows the theory structure signal of the utility model mask plate; Said mask plate is that example specifically describes with passivation layer punching mask plate; As shown in Figure 2, said mask plate comprises: each other involutory upper and lower substrate 1, be packaged in liquid crystal molecule 4 between the upper and lower substrate 1, be attached at upper and lower substrate 1 outside surface and laterally zygomorphic electrode 5.

The concrete manufacturing process of mask plate shown in Figure 2 is following: the liquid crystal molecule 4 that at first will have switching function is compounded between the upper and lower substrate 1 through doubling; Outside surface at upper and lower substrate 1 plates layer of conductive film respectively then; Like indium tin oxide (ITO) film; And, staying electrode 5 in needed via hole position through conventional MSAK manufacturing such as laser or electron beam means, the conductive film of other positions is removed; Form the electrode 5 of upper and lower symmetry, the position of said electrode 5 and radius are suitable with needed via hole.

Structural representation when Fig. 3 shows the outage of the utility model mask plate; As shown in Figure 3, when the electrode 5 of mask plate not during impressed voltage, the liquid crystal molecule 4 that upper and lower substrate is 1 is the lack of alignment state; This moment, light can't through electrode 5 region covered, were light tight district.

Fig. 4 shows the structural representation in when energising of the utility model mask plate, and is as shown in Figure 4, and when electrode 5 impressed voltages of mask plate, the liquid crystal molecule 4 that upper and lower substrate is 1 be orderly ordered state, and optical fiber can through electrode 5 region covered at this moment, are photic zone.

Therefore, if give electrode 5 impressed voltages of mask plate shown in Figure 2, at this moment, electrode 5 region covered are photic zone, and other zones between the upper and lower substrate 1 are light tight district, have so just formed the passivation layer punching mask plate that is applicable to positive photoresist.

Fig. 5 shows the structural representation of the utility model mask plate embodiment; Said mask plate is that example specifically describes with passivation layer punching mask plate; As shown in Figure 5, said mask plate comprises: each other involutory upper and lower substrate 1, be packaged in liquid crystal molecule 4 between the upper and lower substrate 1, be attached at upper and lower substrate 1 outside surface and laterally zygomorphic electrode 5.Wherein, the position of said electrode 5 and radius are suitable with needed via hole.

Further, the electrode of said mask plate comprises many to laterally zygomorphic electrode, is positioned at the electrode non-overlapping copies of same outer surface of substrate, and utilizes insulation course to isolate.

Wherein, said electrode is an ito thin film; Said insulation course is silicon nitride (SIN).

Further, the concrete manufacturing process of mask plate shown in Figure 5 is following: based on the mask plate of above-mentioned Fig. 2 that makes, the outside surface vapor deposition last layer insulating material at the upper and lower substrate 1 that is pasted with electrode 5 obtains insulation course 6; Be attached at said insulation course 6 vapor deposition last layer ito thin film again, make means through conventional MASK such as laser or electron beam then, stay and be applicable to the complementary B electrode 7 of electrode 5 of the mask plate (referring to Fig. 2) of positive photoresist; So, if give B electrode 7 impressed voltages of mask plate shown in Figure 5, at this moment, B electrode 7 region covered are photic zone, and electrode 5 region covered are light tight district, and the situation of this moment is applicable to the passivation layer punching mask plate that uses negative photoresist.

The above is merely the preferred embodiment of the utility model, is not the protection domain that is used to limit the utility model.

Claims

1. a mask plate is characterized in that, said mask plate comprises each other involutory upper and lower substrate, be packaged in liquid crystal molecule between the said upper and lower substrate, be positioned at upper and lower outer surface of substrate and laterally zygomorphic electrode.

2. mask plate according to claim 1 is characterized in that, said electrode comprises many to laterally zygomorphic electrode, lays respectively at non-overlapping copies between the electrode of upper substrate and infrabasal plate outside surface, and isolates through insulation course between the electrode.

3. mask plate according to claim 2 is characterized in that, also comprises power supply, links to each other with said electrode, and said power supply is controlled the break-make of said electrode.

4. according to the arbitrary described mask plate of claim 1 to 3, it is characterized in that said electrode is the indium tin oxide ito thin film.

5. mask plate according to claim 4 is characterized in that, said insulation course is a silicon nitride.