JP2003077834A - Formation method of crystallization semiconductor film and manufacturing apparatus thereof, manufacturing method of thin film transistor, and display using them - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film transistor that can be operated speedily and a display by forming a single-crystal silicon film on a large-sized glass substrate having a relatively low strain point. SOLUTION: By irradiating and moving continuous light, a crystal is grown, and a single-crystal silicon film is obtained. Additionally, the irradiation width of the continuous light is set to 10 μm or less, so that the formation of a crystal boundary in a crystal growth region is inhibited.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for crystallizing a semiconductor thin film, a thin film transistor using the same, and a display device using them.

[0002]

2. Description of the Related Art In recent years, active research and development of an active matrix liquid crystal display device (LCD) using a thin film transistor (TFT) has been actively conducted. The thin film transistors are roughly classified into polycrystalline silicon thin film transistors and amorphous silicon thin film transistors.
Conventionally, amorphous silicon thin film transistors have been mainly used for LCDs, but polycrystalline silicon thin film transistors having a mobility higher than one digit have been used due to miniaturization (high definition) for improving image quality and high speed driving of pixels. It has come to be used. In addition, the speedup of thin film transistors has reached the level where the LCD peripheral drive circuit can be integrally formed in the LCD substrate, and the cost reduction, high reliability and miniaturization are improved by eliminating the peripheral drive circuit chip connection. Is being promoted. However, in the manufacturing process of a conventional polycrystalline silicon thin film transistor, high temperature treatment near 600 ° C. (or 600 ° C. or higher) is required, so expensive quartz needs to be used as a substrate, and a large LCD can be manufactured at low cost. It was difficult to do.

Therefore, after depositing amorphous silicon on an inexpensive glass substrate by using a low-temperature process of 600 ° C. or lower, excimer laser annealing (ELA) is used to change the amorphous silicon into polycrystalline silicon to improve the thin film transistor. Technology for improving performance is being put to practical use. This method is a method of irradiating an amorphous silicon with an extremely short wavelength excimer laser beam to melt and crystallize only the amorphous silicon, and to form high-quality polycrystalline silicon without damaging the substrate. be able to. By using the ELA method, a polycrystalline silicon thin film transistor having high mobility can be manufactured and high speed operation of the circuit can be realized.

A schematic process flow of a polycrystalline silicon thin film transistor using the ELA method which is generally used at present is shown in sectional process diagrams of FIGS. In FIG. 18A, reference numeral 180 denotes a glass substrate, on which a SiO ₂ film 181 as a protective film by a CVD method and an amorphous silicon film 182 as a non-single crystal semiconductor film are deposited. There is. Here, by irradiating the amorphous silicon film 182 with excimer laser light, the amorphous silicon film 18 is
2 is melted and crystallized when cooled to form a polycrystalline silicon film 1.
83 is formed (see FIG. 18B).

Next, as shown in FIG. 18C, the polycrystalline silicon film 183 is patterned and etched to form an active region of the thin film transistor. And CVD on the whole surface
Method, a SiO ₂ film is deposited to form a gate insulating film 184, and an n ⁺ polycrystalline silicon film containing phosphorus at a high concentration is deposited, and then pattern etching is performed to form the gate electrode 18.
5 is formed. Further, phosphorus (or boron) is implanted into the polycrystalline silicon film 183 using the gate electrode 185 as a mask to form an n ⁺ (or p ⁺ ) impurity layer, thereby forming a source / drain region 186 of the thin film transistor.

[0006] Next, as shown in FIG. 18 (d), after the SiO ₂ film 187 as an interlayer insulating film on the entire surface is deposited by CVD, the source of SiO ₂ film 187 of the contact forming portion is patterned etch Wiring or drain wiring 1
88 and wiring 189 to the gate electrode to form a polycrystalline silicon thin film transistor.

A thin film transistor using a single crystal silicon film having a higher electron mobility than that of polycrystalline silicon has also been reported (RPZingg et al, “First MOS tr.
ansistors on Insulator by Silicon Saturated
Liquid Solution Epitaxy ”, IEEE ELECTRON DEVI
CE LETTERS, Vol.13 No.5 (May 1992) p294-6,
Japanese Examined Patent Publication No. 4-57098, Masayoshi Matsumura, "Physical Transistor" Applied Physics, Vol. 65, No. 8 (1996) p.
842-848 and the like).

The following various techniques are known as methods for forming a single crystal silicon film on a substrate.

(1) Temperature of about 800 to 1200 ° C., hydrogen atmosphere, 100 to 760 Torr (13.3 to 101.0)
At 8 kPa), silane, dichlorosilane, trichlorosilane and silicon tetrachloride are decomposed to grow single crystal silicon.

(2) Using a single crystal silicon substrate as a seed, from an indium silicon solution or an indium gallium silicon solution heated at 920 to 930 ° C.,
A silicon epitaxy layer is formed by a cooling process, and a silicon semiconductor layer is formed on this layer. (Soo Hong L
ee, “VERY-LOW-TEMPERATURE LIQUID-PHASE EPITAXI
AL GROWTH OF SILICON ”, MATERIALS LETTERS, V
ol.9 No.2,3 (Jan.1990) p53-56, R. Bergmann et a
l, “MOS transistors with epitaxial Si, late
rally grown over SiO / Sub2 / by liquid phase
epitaxy ”, J. Applied Physics A, Vol.A54 No.1
p103-5, RPZingg et al, “First MOS trans
istors on Insulator by Silicon Saturated Liq
uid Solution Epitaxy ”, IEEE ELECTRON DEVICE
LETTERS, Vol.13 No.5 (May 1992) p294-6 and other references) (3) Epitaxially grow silicon on a sapphire substrate. (GAGarcia, REReedy, and MLBurg
er, “High-quality CMOS in thin (100nm) sili
con on sapphire ”, IEEE ELECTRON DEVICE LETT
ERS, Vol.9 (Jan.1988) p32-34 etc.) (4) A silicon layer is formed on an insulating substrate by an oxygen ion implantation method. (K. Izumi, M. Doken, and H. Ariyosh
tl, “CMOS device fabrication onburied SiO ₂
layers formed by oxygen implantation into sil
icon ”, Electron Lett., Vol.14 No.18 (Aug.197
8) References such as p593-594) (5) A step is formed on a quartz substrate, a polysilicon layer is formed on this step, and then this is heated to 1400 ° C. or higher by a laser beam or a strip heater. The heated polysilicon layer forms an epitaxial growth layer by using the steps formed on the quartz substrate as nuclei. (Seijiro Furukawa, "Grapho epitaxy", IEICE, Vo
l. 66 No. 5 (May 1983) p486-4
89, reference 7, Geis, MW et al, "Crystallographic.
orientation of silicon on an amorphous sub
strate using an artificial-relief grating and
laser crystallization ”, Appl. Phys.Letter,
35, 1, p71-74 (July 1979), Ref. 8, Geis, MW
et al, “Silicon graphoepitaxy”, Jpn.J. App
l. Phys., Suppl. 20-1, p39-42 (1981), etc.) A thin film transistor using single crystal silicon can be formed by almost the same process as the above-mentioned polycrystalline silicon thin film transistor.

[0011]

However, in the technique of forming a polycrystalline silicon film by annealing and crystallizing an amorphous silicon film by an excimer laser,
In order to handle large substrates, a method of processing the excimer laser into a linear shape and scanning the entire surface of the substrate has been adopted, but with a pulsed excimer laser, energy variation between pulses and energy variation in the linear direction are used. Therefore, it is difficult to uniformly heat the entire surface of the amorphous silicon film on the substrate surface, and the film quality of the polycrystalline silicon film varies within the substrate surface. Therefore, there is a problem in that characteristics (in particular, mobility) of a thin film transistor formed using a polycrystalline silicon film having variation are varied. Further, the amorphous silicon film melted by laser irradiation is cooled, and when forming a polycrystalline silicon film, crystal nuclei are randomly formed in the molten silicon in the initial stage of cooling, and as the cooling progresses, Since the nucleus serves as the growth center, it is very difficult to control each crystal grain of the polycrystalline silicon film, and the grain size becomes uneven. Therefore, when polycrystalline silicon with a large grain size is used to achieve high mobility, the number of crystal grains (number of crystal grain boundaries) in the active region of each thin film transistor varies, and the thin film transistor characteristics (especially mobility) are ) Has a problem that it varies.

Further, since the polycrystalline silicon film has crystal grain boundaries, it has a problem that it is difficult to improve the mobility because the film contains many defects as compared with the single crystal silicon film. is doing.

On the other hand, in the formation of single crystal silicon,
The temperature (strain point) that causes distortion like a glass substrate is 600 ° C
Below, a technique for forming a silicon epitaxy layer on a large substrate has not been developed. Further, even in the technique of utilizing the step on the glass substrate, there is a problem that single crystallization cannot be performed at a low temperature.

An object of the present invention is to form a single crystal silicon film on a large glass substrate having a relatively low strain point, to make a thin film transistor which can operate at a higher speed than a polycrystalline silicon thin film transistor, and to make it by this method. The present invention is to provide a display device.

[0015]

In order to achieve the above object, the method for forming a crystallized semiconductor film, the manufacturing apparatus therefor, the manufacturing method for a thin film transistor, and the display device according to the present invention are described in claims 1 to 40. Are taking steps to do so.

Specifically, the means of the invention of claim 1 is a method of forming a crystallized semiconductor film for crystallizing a non-single-crystal semiconductor film formed on a substrate, the non-single-crystal semiconductor film being formed on the substrate. A step of forming a film, and a first step of forming the non-single crystal semiconductor film.
The region is irradiated with continuous light to melt the non-single-crystal semiconductor film in the first region, and the irradiation energy of the continuous light to the non-single-crystal semiconductor film is 0.1 J / cm ^{2 to 1} J.
/ Cm ² constant and so as a range and a step of relatively moving said first region, wherein the non-single crystal semiconductor film material that has been melted in the first region are sequentially reach outside the first region The non-single-crystal semiconductor film is crystallized by being cooled by being cooled to be a crystallized semiconductor film.

The means taken by the invention of claim 2 is a method of forming a crystallized semiconductor film for crystallizing a non-single-crystal semiconductor film formed on a substrate, wherein the non-single-crystal semiconductor film is formed on the substrate. Step, irradiating continuous light to the first region of the non-single crystal semiconductor film to melt the non-single crystal semiconductor film in the first region, and irradiation energy of the continuous light to the non-single crystal semiconductor film. Is relatively moved in the range of 0.1 J / cm ^{2 to 1} J / cm ² , and the first region is relatively moved, and the first region is adjacent to the second region, and a part of the second region is adjacent to the second region. Irradiating the third region overlapping the second region with continuous light to melt the non-single-crystal semiconductor film in the third region,
The third region is relatively moved in parallel with the second region so that the irradiation energy of the continuous light on the non-single-crystal semiconductor film is constant in the range of 0.1 J / cm ^{2 to 1} J / cm ^2. And a non-single-crystal semiconductor film, wherein the non-single-crystal semiconductor film material melted in the first region and the third region sequentially reaches the outside of the first region or the third region and is cooled. Is crystallized to form a crystallized semiconductor film.

The means of the invention of claim 3 is a method of forming a crystallized semiconductor film for crystallizing a non-single crystal semiconductor film formed on a substrate, wherein the non-single crystal semiconductor film is formed on the substrate. Step, irradiating continuous light to the second region of the non-single crystal semiconductor film to melt the non-single crystal semiconductor film in the first region, and irradiation energy of the continuous light to the non-single crystal semiconductor film. Is relatively moved within a range of 0.1 J / cm ^{2 to 1} J / cm ² relative to the first region, and a desired distance from the second region passed by the first region. The fourth region is irradiated with continuous light to melt the non-single-crystal semiconductor film in the fourth region, and the irradiation energy of the continuous light to the non-single-crystal semiconductor film is 0.1 J.
/ Cm ^{2 to 1} J / cm ² within the fourth range so as to be constant.
A step of moving the area in parallel with the second area at a constant interval in parallel, irradiating continuous light to a fifth area passed by the fourth area and a sixth area in contact with the second area, The non-single-crystal semiconductor film in the sixth region is melted, and the irradiation energy of the continuous light to the non-single-crystal semiconductor film is constant in the range of 0.1 J / cm ^{2 to 1} J / cm ² . A step of relatively moving six regions in parallel with the second region and the fifth region, wherein the non-single-crystal semiconductor film material melted in the first region, the fourth region and the sixth region is The non-single-crystal semiconductor film is crystallized into a crystallized semiconductor film by sequentially reaching the outside of the first region, the fourth region, or the sixth region and cooling.

The means taken by the invention of claim 4 is as follows:
A configuration according to any one of claims 3 to 4, wherein a plurality of continuous lights are used to irradiate the plurality of first regions, the third region, the fourth region, or the sixth region with the continuous lights at the same time, and the continuous lights are relatively moved. Is added.

The means taken by the invention of claim 5 is as follows:
~ Irradiation to the non-single crystal semiconductor film according to any one of claims 4 to
Energy density of continuous light is 1 × 10^FourW / cm²~ 1x
10 ⁷W / cm²To add a configuration that is in the range of
It

The means taken by the invention of claim 6 is as follows:
According to any one of claims 4 to 4, a structure in which the time for irradiating a desired region of the non-single crystal semiconductor film with continuous light is 1 × 10 ⁻³ sec or less is added.

The means taken by the invention of claim 7 is as follows:
According to any one of claims 4 to 4, a structure in which the region irradiated with continuous light is moved at a relative speed of 0.1 m / sec or more is added.

The means taken by the invention of claim 8 is as follows:
According to any one of claims 7 to 7, a structure in which each of the regions irradiated with continuous light has a diameter of 10 µm or less is added.

The means taken by the invention of claim 9 is as follows:
~ In any one of claims 8 to 14, a configuration in which continuous light is supplied by a solid-state light emitting element is added.

The means taken by the invention of claim 10 is the addition of the structure of claim 9, in which one continuous light is condensed and supplied from a plurality of solid state light emitting devices.

The means taken by the invention of claim 11 is the addition of the structure in which the solid-state light-emitting element is a semiconductor laser or a semiconductor LED, to the structure of either claim 9 or claim 10.

According to a twelfth aspect of the present invention, in addition to the fourth aspect, the diameter of the first region or the fourth region is larger than the distance between the second region and the fourth region.

The means taken by the invention of claim 13 is the addition of the structure according to claim 3, wherein the sixth region overlaps both ends of the second region and the fifth region.

The means taken by the invention of claim 14 is the addition of the structure of any one of claims 1 to 4, wherein the continuous light is light having a wavelength shorter than 600 nm.

The means taken by the invention of claim 15 is the addition of the structure of any one of claims 1 to 4, wherein the non-single crystal semiconductor film is an amorphous semiconductor film.

According to a sixteenth aspect of the present invention, in the fifteenth aspect, the non-single crystal semiconductor film is a film containing amorphous silicon as a main component, and the crystallized semiconductor film is a large grain polycrystalline silicon film or A structure including a single crystal silicon film is added.

According to a seventeenth aspect of the invention, in any one of the first to fourth aspects, the strain point of the substrate is lower than the crystallization temperature of the non-single crystal semiconductor film formed on the substrate. It is something to add.

The invention of claim 18 provides a means according to any one of claims 1 to 4, wherein a plurality of seventh regions in which a non-single crystal semiconductor film is formed and which is not crystallized are provided, After the step of modifying the non-single crystal semiconductor film in the region for forming the first alignment pattern for alignment by light irradiation, the relative position of each continuous light is clear with respect to the first alignment pattern. A configuration for relatively moving is added as described above.

According to a nineteenth aspect of the present invention, the means for forming a crystallized semiconductor film according to any one of the first to fourth aspects is characterized in that after the crystallized semiconductor film is formed by a plurality of continuous light irradiation regions, the plurality of continuous light irradiation regions are formed. On the other hand, a configuration including a step of forming a second alignment pattern for alignment in the eighth region whose relative position is clear is added.

According to a twentieth aspect of the invention, a non-single crystal is formed on the surface of a substrate or a surface of a substrate on which a third alignment pattern for alignment is formed. A semiconductor film is formed, and each continuous light beam is moved relative to the third alignment pattern so that its relative position is clear.

According to a twenty-first aspect of the present invention, a means for holding a substrate and a substrate surface is irradiated with continuous light at one or a plurality of positions to melt a non-single crystal semiconductor film formed on the substrate surface. And a mechanism for relatively moving the continuous light irradiation region so that the irradiation energy of the continuous light is constant in the range of 0.1 J / cm ^{2 to 1} J / cm ² .

According to a twenty-first aspect of the present invention, the energy density of continuous light with which the non-single-crystal semiconductor film is irradiated is 1 × 10 ⁴ W / cm ² to 1 × 10 ⁷ W / cm ² A configuration having a mechanism for making the range constant is added.

According to a twenty- ^{third aspect} of the present invention, in the twenty-first aspect, the substrate is arranged so that the time for which continuous light is irradiated to a desired region of the non-single crystal semiconductor film is 1 × 10 ⁻³ sec or less. A structure having a mechanism that can be moved manually is added.

[0039] The means taken by the invention of claim 24 is the addition of the structure of claim 21, which has a mechanism for moving the region irradiated with continuous light at a relative speed of 0.1 m / sec or more.

According to a twenty-first aspect of the present invention, in each of the twenty-first aspects, one area is irradiated with continuous light.
A structure having a diameter of 0 μm or less is added.

The means taken by the invention of claim 26 is to add to the structure of claim 21, continuous light is supplied by a solid state light emitting device.

The means implemented by the twenty-seventh aspect of the present invention adds to the twenty-first aspect a configuration in which one continuous light is condensed and supplied from a plurality of solid-state light emitting elements.

The means implemented by the twenty-eighth aspect of the present invention has a mechanism according to the twenty-first aspect, in which one light condensed from one solid-state light-emitting element or a plurality of solid-state light-emitting elements is split into a plurality of continuous lights. The configuration is added.

The means of implementing the invention of claim 29 is to add the constitution in which the solid state light emitting device is a semiconductor laser or a semiconductor LED to any one of claims 26 to 28.

According to a thirty-third aspect of the present invention, in addition to the twenty-first aspect, a structure having a mechanism for keeping a relative moving speed constant while the substrate is irradiated with continuous light is added.

According to a twenty-first aspect of the invention, means for detecting the height of the surface of the substrate against variations in substrate thickness, waviness, and displacement of relative movement in accordance with the relative movement of the substrate in the twenty-first aspect, A structure having a mechanism for keeping the focus of light always constant is added.

According to a thirty-second aspect of the present invention, in the twenty-first aspect, there is provided a mechanism for forming a first alignment pattern for alignment in a region different from continuous light irradiation for crystallization, A structure having a mechanism for controlling the relative position with respect to the first alignment pattern to relatively move the irradiation position of continuous light is added.

According to a thirty-third aspect of the present invention, in the twenty-first aspect, the first alignment pattern for alignment, which is formed on the substrate or the substrate surface, is detected and the first alignment pattern is detected.
A configuration having a mechanism for controlling the relative position with respect to the alignment pattern to relatively move the irradiation position of continuous light is added.

According to a thirty-fourth aspect of the present invention, in addition to the twenty-first aspect, a structure having a mechanism for forming an alignment pattern for alignment in a region whose relative position is distinct from the continuous light irradiation region is added. Is.

According to a thirty-fifth aspect of the present invention, in the apparatus for producing a crystallized semiconductor film according to any one of the thirty-second and thirty-fourth aspects, the alignment pattern alters the non-single-crystal semiconductor film by light. A structure having a mechanism formed by the above is added.

The measures taken by the invention of claim 36 are at least the method for forming a crystallized semiconductor film according to any one of claims 1 to 20 and any one of claims 21 to 35. A step of forming a crystallized semiconductor film on a substrate by using a crystallized semiconductor film manufacturing apparatus, a step of pattern-etching a desired single crystal region of the crystallized semiconductor film to form an active region, and insulating the entire surface Forming a film and a conductive material, patterning and etching the conductive material to form a gate electrode, a gate insulating film, and a gate wiring; introducing n-type or p-type impurities into the source / drain regions; It is configured to include a step of forming wiring and drain wiring.

According to a thirty-seventh aspect of the present invention, in the thirty-sixth aspect, the pattern for forming the active region is formed by aligning with the alignment pattern formed by the eighteenth to twentieth aspect. The configuration described above is added.

According to a thirty-eighth aspect of the present invention, in the thirty-sixth aspect, the non-single crystal semiconductor is an amorphous semiconductor film, and the amorphous semiconductor film is selectively removed with respect to the crystallized semiconductor film. After the step of, the structure for forming the active region is added in accordance with the crystallized semiconductor film.

According to a thirty-ninth aspect of the present invention, a means includes a pair of substrates having electrodes on their respective surfaces, and a liquid crystal layer sandwiched between the pair of substrates arranged so that the electrodes face each other. Thin film transistors as switching elements are arranged in a matrix on one inner surface of the pair of substrates, and ON / OFF of a voltage signal to a pixel electrode supplied from a signal line by the thin film transistor.
39. A method for manufacturing a thin film transistor according to claim 36, wherein the thin film transistor is a liquid crystal display device having a structure for controlling a polarization amount of light by controlling an electric field applied to the liquid crystal material. It is configured as follows.

According to a 40th aspect of the present invention, the thin film transistor according to any one of the 36th to 38th aspects is arranged in a matrix form to control the power supply to the organic EL material. The configuration is used as a switching element.

With the method for forming a crystallized semiconductor film, the method for manufacturing the same, the method for manufacturing a thin film transistor, and the display device, the following effects are achieved in the invention of each claim.

In the invention of claim 1, the non-single-crystal semiconductor film is melted by irradiating the first region of the non-single-crystal semiconductor film with continuous light, and the first region is moved while continuously irradiating continuous light. Then, cooling starts and crystallizes in a portion outside the area irradiated with continuous light. Furthermore, while irradiating continuous light, the first
When the area is moved, melting starts in the area where the continuous light is newly irradiated, and in the area outside the continuous light irradiation area, cooling proceeds sequentially from the vicinity where the crystal was formed immediately before that, and crystallization occurs. , Crystal growth in which the crystallinity (crystal orientation, etc.) of the crystal formed immediately before is succeeded occurs. Finally, on the non-single crystal semiconductor film, crystal growth occurs along the moving direction of the first region in the region where the first region has moved, and the single crystal semiconductor film is formed in the region where the first region has passed. Can be formed. Here, when the irradiation energy of continuous light irradiated to a certain region is insufficient, the non-single crystal semiconductor film does not melt, or the melted non-single crystal semiconductor film is crystallized too early to cause crystal growth. It will be difficult. Also,
If the irradiation energy is too high, more heat than the melting energy of the non-single-crystal semiconductor film is applied, the temperature of the melted non-single-crystal semiconductor film rises, and it becomes easier to evaporate and heat conduction causes Since the temperature of the material also rises, stable crystallization is difficult, and thermal stress is applied to the substrate.
It is necessary to make constant in the range of ^{1J / cm 2 ~1J / cm 2} .

According to the second aspect of the invention, similarly to the first aspect of the invention, the second region crystallized is formed by moving the non-single crystal semiconductor film while irradiating continuous light. Here, a third region that is adjacent to the second region and partially overlaps the second region
By irradiating the region with continuous light, the non-single-crystal semiconductor film in the region adjacent to the second region is melted, and when the third region is moved in parallel with the second region while continuously irradiating with the continuous light, Cooling begins and crystallizes in the area outside the irradiated area. At this time, since crystals have already been formed on the side of the second region where cooling starts, crystal growth occurs by taking over the crystallinity of the second region, and crystal growth can be performed in the region where the third region has passed.

According to the third aspect of the invention, similarly to the first aspect of the invention, the non-single crystal semiconductor film is moved while being irradiated with continuous light to form the crystallized second and fifth regions. . Here, the non-single-crystal semiconductor film between the second region and the fifth region is melted by irradiating the sixth region, which is in contact with the second region and the fifth region, with continuous light, and the sixth region is continuously irradiated with the continuous light.
When the area (1) is moved in parallel with the second area (5) and the fifth area (5), cooling starts and crystallizes at a portion outside the area irradiated with continuous light. At this time, since both ends of the portion where cooling starts are the second region and the fifth region where crystals have already been formed, crystal growth occurs by inheriting the crystallinity of the second region and the fifth region at both ends, It is possible to crystallize between the second region and the fifth region, and the crystallinity is the second region on the side in contact with the second region.
The region has crystallinity, and the side in contact with the fifth region has the crystallinity of the fifth region.

According to the invention of claim 4, a plurality of continuous light irradiation regions are simultaneously formed, and the amorphous semiconductor film to the crystallized semiconductor film are produced by the same operation as the inventions of claims 1 to 3. And a large-area crystallized semiconductor film can be formed at the same time.

In the fifth aspect of the invention, when the energy density of continuous light is low, the region of the non-crystallized semiconductor film, which has been heated by the continuous light irradiation, is not irradiated with the continuous light. It is difficult to melt the amorphous semiconductor film because heat escapes due to heat conduction to the substrate side or the surface side, and it is necessary to perform irradiation for a long time in order to melt at low energy. The temperature rises, and the strain point of the substrate is exceeded, causing damage to the substrate.
Therefore, an energy density of 1 × 10 ⁴ W / cm ² or more is required to suppress the heat conduction to the substrate and melt the amorphous semiconductor film in a short time. On the other hand, when the energy density of continuous light is high, the irradiation energy supplied to a certain area is 1 J / cm ² as described in claims 1 to 4.
In order to achieve the following, it is necessary to make the moving speed of the irradiation region extremely high, but it is difficult to realize mechanically, so 1 × 10
The energy density needs to be ⁷ W / cm ² or less.

According to the sixth aspect of the present invention, by setting the time during which continuous light is irradiated to 1 × 10 ⁻³ sec or less, the melted amorphous semiconductor film is cooled before the amorphous semiconductor film is cooled. The supplied energy (heat) can be diffused by heat conduction to prevent the temperature rise of the substrate.

According to the invention of claim 7, the region irradiated with continuous light moves at a relative velocity of 0.1 m / sec or more, so that high energy continuous light capable of melting the amorphous semiconductor film in a short time is generated. It can be used and the temperature rise of the substrate can be prevented.

According to the invention of claim 8, the width of crystal growth is set to 10
It can be made to be not more than μm. If the width of the crystal growth is too wide, many crystal nuclei will be formed at the start of the crystal growth, so even if the crystal grows in the moving direction of continuous light, it is divided into multiple parts (there is a crystal boundary. (As it is) crystallization proceeds. On the other hand, the continuous light is emitted 1 each
By setting the two regions to 10 μm or less, it is possible to perform crystal growth by cooling starting from both ends of continuous light and having a boundary only in substantially the central portion. Furthermore, preferably 2
When the thickness is less than or equal to μm, uniform cooling occurs, so that the crystal grows only in the moving direction of the irradiation region and a single crystal becomes possible.

In the ninth aspect of the invention, continuous light is supplied by the solid-state light-emitting device, so that continuous light with more stable energy can be obtained as compared with the case where a gas laser or the like is used, and the crystal is stabilized. Therefore, it is possible to improve uniformity and reproducibility.

In the tenth aspect of the present invention, one continuous light is condensed and supplied from a plurality of solid state light emitting elements, so that a sufficiently large energy can be obtained even with a solid state light emitting element having a small single output. it can.

In the eleventh aspect of the present invention, by using a semiconductor laser or a semiconductor LED, continuous light energy can be easily controlled, stabilized, and uniformized, and continuous light can be obtained at low cost.

According to the twelfth aspect of the present invention, the region where the crystallized film is formed partially overlaps the next continuous light irradiation region, so that the crystal growth succeeding the previous crystallinity occurs and the crystal can be expanded. .

According to the thirteenth aspect of the present invention, the region where the crystallized film is formed partially overlaps with the next continuous light irradiation region, so that crystal growth that inherits the previous crystallinity occurs and the crystal enlarges. Can be achieved. In addition, it is possible to prevent the formation of a region that is not crystallized due to displacement or the like.

In the fourteenth aspect of the invention, continuous light is 600 n
Since the light having a wavelength shorter than m can absorb most of the continuous light by the non-single crystal semiconductor film, only the non-single crystal semiconductor film can be heated and melted, so that the temperature rise of the substrate is reduced. It is possible to use a substrate having a low strain point.

According to the eighteenth to twentieth aspects of the invention, the relative positions of the alignment pattern and the crystallized semiconductor film can be determined, and the subsequent element formation using the crystallized semiconductor film is facilitated.

According to the twenty-first aspect of the invention, the molten region of the non-single crystal semiconductor film can be relatively moved, and in the portion deviated from the continuous light irradiation region, cooling is performed sequentially from the vicinity where the crystal was formed immediately before that. As it progresses and crystallizes, crystal growth occurs in which the crystallinity (crystal orientation, etc.) of the crystal formed immediately before is succeeded. Finally, in a region of the non-single-crystal semiconductor film which is irradiated with continuous light and then cooled, crystals can grow along the moving direction of the continuous light to form a crystallized semiconductor film. Here, when the irradiation energy of continuous light with which a certain region is irradiated is insufficient, the non-single-crystal semiconductor film does not melt, crystallization of the melted non-single-crystal semiconductor film occurs too early, and crystal growth occurs. It will be difficult. Further, if the irradiation energy is excessive, more heat than the melting energy of the non-single-crystal semiconductor film is applied, the temperature of the melted non-single-crystal semiconductor film rises, and evaporation easily occurs Since the temperature also rises, stable crystallization is difficult and heat stress is generated on the substrate. Therefore, the irradiation energy of continuous light is 0.1 J / cm ^{2 to 1} J.
It is necessary to make it constant within the range of / cm ² .

According to the twenty-second aspect of the invention, by setting the energy density of continuous light to 1 × 10 ⁴ W / cm ² or more, it is difficult to melt the amorphous semiconductor film which occurs when the energy is low. The temperature rise of the substrate due to irradiation for a long time can be avoided, and by setting it to 1 × 10 ⁷ W / cm ² or less, the moving speed of the irradiation region can be limited so that the irradiation energy of continuous light can be suppressed to 1 J / cm ² or less, Make it mechanically feasible.

In the invention of claim 23 or claim 24,
An increase in temperature of the substrate due to heat conduction of energy (heat) supplied to the amorphous semiconductor film before cooling of the melted amorphous semiconductor film starts can be reduced.

In the twenty-fifth aspect of the present invention, the progress of crystallization divided into a plurality of portions (while the crystal boundaries still exist) is prevented, and the crystal growth having the crystal boundaries only in the approximate center is enabled.

In the twenty-sixth aspect of the present invention, continuous light of more stable energy can be obtained, and crystallization excellent in stability, uniformity and reproducibility can be realized.

According to the twenty-seventh aspect of the invention, a sufficiently large energy can be obtained even if a solid state light emitting device having a small single output is used.

According to the twenty-eighth aspect of the invention, since the entire energy can be uniformly controlled by controlling the light intensity after condensing by uniformly dividing, the apparatus can be simplified.

According to the twenty-ninth aspect of the invention, the energy of continuous light can be easily controlled and stabilized, the stability of the device can be improved, and the cost of the device can be reduced by using an inexpensive member.

According to the thirtieth aspect of the invention, the uniformity of crystallization can be improved.

According to the thirty-first aspect of the invention, continuous light of a constant shape and a constant energy can be always supplied even to unevenness and mechanical waviness on the surface of the substrate, and a uniform crystal can be obtained. Since there is a margin in the film thickness accuracy and the mechanical accuracy of the flatness of the substrate holding portion, it is possible to use an inexpensive substrate and an inexpensive device. Furthermore, high mechanical adjustment is not required, and productivity can be improved.

In the inventions of claim 32 to claim 34, it is possible to specify the region where the crystallized semiconductor film is formed,
It facilitates later element formation using the crystallized semiconductor film.

According to the thirty-sixth aspect of the present invention, by using the crystallized semiconductor film in the active region, a thin film transistor having higher mobility can be obtained as compared with the case where an amorphous semiconductor film or a polycrystalline semiconductor film is used in the active region. You can Further, the single crystal can reduce variations in characteristics of the thin film transistor in the plane of the substrate.

In the thirty-seventh aspect of the invention, the active region can be intentionally formed in the region where the crystallized semiconductor film is formed, and it is not necessary to crystallize the entire surface of the non-single-crystal semiconductor film, thus improving the productivity. it can.

In the thirty-eighth aspect of the invention, since only the crystallized semiconductor film remains, the active region can be formed in accordance with the region where the crystallized semiconductor film is formed, and the entire non-single crystal semiconductor film is crystallized. There is no need to convert it to improve productivity.

According to the thirty-ninth aspect of the present invention, by using a thin film transistor having a high mobility, high speed switching is possible, and even if a fine thin film transistor is used, a sufficient switching ability is obtained, so that high definition and high resolution can be achieved. The aperture ratio can be increased. Further, it is possible to form a switching circuit in the matrix and simultaneously to form a driving circuit around the display portion.

According to the forty-third aspect of the present invention, the characteristics of the switching element can be made uniform, the power supply to the organic EL material can be made uniform, and the display characteristics can be improved. Further, it is possible to form a switching circuit in the matrix and simultaneously to form a driving circuit around the display portion.

[0088]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a method for forming a crystallized semiconductor film, an apparatus for manufacturing the same, a method for manufacturing a thin film transistor, and a display device using them according to embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1) FIG. 1 is a process top view for explaining a method for forming a crystallized semiconductor film according to a first embodiment of the present invention.

In FIG. 1 (a), 10 is amorphous silicon as a non-single-crystal semiconductor film, which is formed by depositing SiO ₂ which is an insulating film on a glass substrate by CVD or the like and further depositing it by CVD or the like. A membrane, 1
Reference numeral 1 is a continuous light irradiation area. Here, in order that continuous light is absorbed by the amorphous silicon film 10 and melted efficiently, 600 nm obtained from a harmonic wave of a YAG laser
The following continuous / single wavelength laser light is used, and the energy density of continuous light is 1 × 10 ⁴ W / cm ² to 1 × 10 ^{7 respectively.}
It was kept constant within the range of W / cm ² .

Next, as shown in FIG. 1B, the irradiation energy to the amorphous silicon film 10 is 0.1 J /
The continuous light irradiation area 11 is moved (relatively) at a constant speed so as to be constant in the range of cm ^{2 to 1} J / cm ² . Then, the amorphous silicon film 10 has a thickness of 0.1 J / cm ^{2 to 1} J /
It is melted by supplying energy of cm ² .
Further, in the cooling region 12 deviated from the continuous light irradiation region 11, heat is taken away by heat conduction (diffusion) or radiant heat because the energy is not received, the melted silicon is cooled, crystallized below the melting point, and crystallized region. 13 is formed. If the amount of energy is too small, melting will be difficult, and crystal growth will be difficult. If the amount of energy is too large, the temperature of the melted amorphous silicon film rises too much, and the SiO ₂ film (and the glass substrate) of the base film is also melted.

Next, as shown in FIG. 1C, when the continuous light irradiation area 11 is sequentially moved, the continuous light irradiation area 11 is moved.
The crystallized region 13 is formed in the region through which is passed. Here, at the boundary between the cooling region 12 and the crystallization region 13, crystallization proceeds while inheriting the crystallinity of the crystallized silicon film in the crystallization region 13, so that the crystal in the crystallization region 13 grows. A large single crystal film can be partially formed.

The growth of this single crystal film will be described in more detail with reference to the process top view of FIG. (Similar to the case in Figure 1)
In FIG. 2, 20 and 24 are amorphous silicon films as a non-single crystal semiconductor film formed on a glass substrate, 21 and 25 are continuous light irradiation regions, 22 and 26 are cooling regions, and 23 and 27 is a crystallized region. The lines in the crystallized regions 23 and 27 indicate crystal boundaries.

First, a region where crystals start to form (left side in the figure)
Then, cooling is started at the same time and a plurality of crystal nuclei are formed, so that a plurality of crystals start to be formed. When the continuous light irradiation region 21 is moved in this state, when it is newly cooled and crystallized, crystal growth in which the crystallinity is succeeded to the previously formed crystal may occur. Here, as shown in FIG. 2A, when the diameter (width) of the continuous light irradiation region 21 is small (specifically, 10 μm or less), thermal diffusion to the unmelted amorphous silicon film 20 is performed. As a result, the peripheral portion (vertical direction in the figure) of the melting region cools faster than the central portion, so that crystal growth progresses from the peripheral portion, and a plurality of crystals initially formed are crystallized as the continuous light irradiation region 21 progresses. The boundaries are reduced, and finally two crystal growths on the left and right sides with respect to the traveling direction of the continuous light irradiation region 21. Therefore, it is possible to obtain a complete single crystal by selecting a region without crystal boundaries on the left and right (upper and lower in the figure) of the crystallized region 23.

On the other hand, as shown in FIG. 2B, when the diameter (width) of the continuous light irradiation area 25 is large, the cooling area 26 is formed.
Since there is no energy taken away by heat diffusion to the left and right (up and down in the figure) in the vicinity of the center, the cooling progresses almost uniformly and crystal growth progresses in the moving direction of the continuous light irradiation region 25, resulting in an initially formed crystal state. However, since the crystal boundaries are inherited as they are, the crystal growth is in a state where the crystal boundaries are inherited almost as they are. Therefore, the crystal boundary depends on the initial crystal growth state (nucleation state), and the location of the crystal boundary cannot be specified.

Here, the energy density of continuous light is set in the range of 1 × 10 ⁴ W / cm ² to 1 × 10 ⁷ W / cm ² , respectively. This is because the quality of the amorphous silicon film 10, 20 or 24 is different. And film thickness must be optimized. When the energy density is small, it is difficult to melt the amorphous silicon film because heat is taken away by thermal diffusion and radiant heat, and the amorphous silicon film is formed by thermal diffusion due to the time required for melting. Since the temperature of the glass substrate (including the underlying insulating film formed on the glass substrate) rises and reaches (or near) the strain point of the glass substrate, distortion such as deformation occurs in the glass substrate. . On the other hand, when the energy density is too high, the diameter (width) of the irradiation region is extremely reduced in order to reduce the amount of energy to be supplied to the amorphous silicon film per unit area to 1 J / cm ² or less. Since it is necessary to increase the moving speed of the device, it becomes difficult to realize the device.

Further, in order to prevent the temperature rise of the glass substrate due to thermal diffusion or radiant heat as much as possible, it is preferable that the time during which the continuous light is partially irradiated is 1 × 10 ⁻³ sec or less. By setting the continuous light irradiation time to 1 × 10 ⁻³ sec or less, it becomes possible to use a glass substrate having a strain point of 600 ° C. or less.

Further, by setting the relative moving speed of the continuous light irradiation area to 0.1 m / sec or more, heating with high energy density and short time can be realized, and thermal stress on the glass substrate can be reduced. It will be possible.

(Embodiment 2) FIG. 3 is a process top view for explaining a method for forming a crystallized semiconductor film according to a second embodiment of the present invention.

In FIG. 3, 30 is a CV on a glass substrate.
An amorphous silicon film as a non-single-crystal semiconductor film is formed by depositing SiO ₂ which is an insulating film by D or the like, and is further deposited by CVD or the like, and 31 is a continuous light irradiation region.

Here, the continuous light is 600n obtained from the harmonics of the YAG laser, as in the first embodiment.
Laser light of continuous or single wavelength of m or less and energy density of continuous light of 1 × 10 ⁴ W / cm ² to 1 × 10 respectively
^It was kept constant within the range of ⁷ W / cm ² .

First, in FIGS. 3A to 3C, similarly to the first embodiment, the continuous light irradiation region 31 is sequentially moved to be crystallized into a region where the continuous light irradiation region 31 has passed. A region 33 is formed.

Next, as shown in FIGS. 3 (d) to 3 (f), continuous light is irradiated to the region 34 in contact with the crystallization region 33, and the irradiation energy is similarly 0.1 J / cm ^{2 to 1} J. /
The continuous light irradiation area 34 is moved in parallel at a constant speed (relatively) while being in contact with the crystallization area 33 so as to be constant in the range of cm ² . The continuous light irradiation region 34 is in contact with the crystallization region 33 in which the single crystal is formed and moves in parallel, so that a single crystal film grown from the crystallization region 33 can be formed.

The growth of the single crystal at this time will be described in more detail with reference to the process top view of FIG.

First, FIG. 4A shows the first embodiment described above.
Is the same as.

Next, as shown in FIG. 4B, when the same crystallization is performed in contact with the crystallization region 43 in which the single crystal is formed, the cooling region 45 is moved along with the movement of the continuous light irradiation region 44. In the region cooled in contact with the single crystal formed in the lower half of the crystallization region 43 in the figure, the single crystal region expands due to the crystal growth of the crystallization region 43. Therefore, as compared with the first embodiment, a region having no crystal boundary can be enlarged. The lines in the crystallized regions 43 and 46 indicate crystal boundaries.

Here, the continuous light irradiation region 44 needs to be in contact with the previously formed crystallization region 43, and in consideration of the accuracy of the diameter of the irradiation region and the position accuracy of relative movement, the irradiation region 44 is It is desirable that it partially overlaps with the crystallized region 43.

In the second embodiment, the irradiation diameter and energy density of continuous light, the irradiation time of continuous light, and the relative moving speed of the continuous light irradiation area are the same as those in the first embodiment.

Further, in the second embodiment, the crystallization region 36 is formed after the crystallization region 33 is formed. However, the crystallization region 36 is continuously formed in the middle of the formation of the crystallization region 33 with a slight delay from the continuous light irradiation region 31. This is exactly the same even if the light irradiation region 34 is moved in parallel with the crystallization region 33.

Further, in FIGS. 3 and 4, the continuous light irradiation areas 31 and 34 and 41 and 44 are described as having the same diameter, but there is no problem even if the diameters are different.

(Embodiment 3) FIG. 5 is a process top view for explaining a method for forming a crystallized semiconductor film according to a third embodiment of the present invention.

In FIG. 5, 50 is a CV on a glass substrate.
An amorphous silicon film as a non-single-crystal semiconductor film is formed by forming SiO ₂ which is an insulating film by D or the like and further depositing by CVD or the like, and 51 is a continuous light irradiation region.

Here, the continuous light is 600n obtained from the harmonics of the YAG laser, as in the first embodiment.
Laser light of continuous or single wavelength of m or less and energy density of continuous light of 1 × 10 ⁴ W / cm ² to 1 × 10 respectively
^It was kept constant within the range of ⁷ W / cm ² .

First, in FIGS. 5A to 5C, the crystallization region 53 is formed in the region where the continuous light irradiation region 51 is sequentially moved and passed, as in the first embodiment described above.

Next, in FIGS. 5D to 5F, the continuous light irradiation region 54 is sequentially moved to a region separated from the crystallization region 53 by a constant distance, as in the first embodiment. The crystallization region 56 is formed in the passed region.

Next, as shown in FIGS. 5 (g) to 5 (i), continuous light is irradiated to the regions 57 contacting both sides of the crystallized regions 53 and 56, and similarly, the irradiation energy is 0.1 J /. cm
^The continuous light irradiation region 57 is moved in parallel at a constant speed (relatively) while being in contact with the crystallization regions 53 and 56 so as to be constant in the range of ^{2 to 1} J / cm ² . The continuous light irradiation region 57 is in contact with the crystallization regions 53 and 56 in which the single crystal is formed and moves in parallel to form a single crystal film crystal-grown from the crystallization regions 53 and 56.

The growth of the single crystal at this time will be described in more detail with reference to the process top view of FIG.

First, FIG. 6A shows the first embodiment described above.
In the same manner as above, two parallel crystallization regions 63 are formed,
Each becomes a single crystal film having a crystal boundary in the approximate center.

Next, as shown in FIG. 6B, when crystallization similar to that described above is performed in contact with the crystallization regions 63 on both sides where the single crystal is formed, the continuous light irradiation region 64 moves with the movement. , A cooling region 65 which is cooled in contact with the single crystal of the crystallization region 63
In the regions on both sides of the single crystal region, the single crystal regions are expanded by the crystal growth of the respective crystallization regions 63. Therefore, the first embodiment
Compared with, it is possible to enlarge a region without crystal boundaries.
The lines in the crystallized regions 63 and 66 indicate crystal boundaries.

Here, the continuous light irradiation area 64 needs to be in contact with the previously formed crystallization area 63, and in consideration of the accuracy of the diameter of the irradiation area and the positional accuracy of relative movement, the irradiation area 64 is It is desirable that the crystallized region 63 partially overlaps. Therefore, the distance between the crystallized regions 63 is equal to the irradiation region 64.
Smaller than the diameter of.

In the third embodiment, the irradiation diameter and energy density of continuous light, the irradiation time of continuous light, and the relative moving speed of the continuous light irradiation area are the same as those in the above-described first embodiment.

In the third embodiment, the crystallization region 66 is formed after the two crystallization regions 63 are formed. This is slightly delayed from the continuous light irradiation region 61 during the formation of the crystallization region 63. Even if the continuous light irradiation area 64 is moved in parallel with the crystallization area 63, the same thing can be said.

Further, in FIGS. 5 and 6, the continuous light irradiation areas 51 and 54 and 61 and 64 are described as having the same diameter, but there is no problem even if they have different diameters.

Further, in the first to third embodiments, the description has been made such that each independent crystallization region is formed, but this has the effect of obtaining a single crystal film even if a plurality of crystallization regions are simultaneously formed. Is exactly the same and can improve productivity.

(Embodiment 4) FIG. 7 is a process top view for explaining a method for forming a crystallized semiconductor film according to a fourth embodiment of the present invention.

In the fourth embodiment, in FIGS. 7 (a) to 7 (c), a plurality of continuous light irradiation regions 71 having a constant interval, the same shape, and the same energy density are formed substantially linearly,
Similar to Embodiment 1 described above, the continuous light irradiation region 71 is moved (relatively) so that the amount of energy is constant, and a plurality of crystallization regions 73 are formed.

Next, as shown in FIG. 7D, similar to the third embodiment, the crystallization regions 73 on both sides where a plurality of single crystals are formed are brought into contact with each other to perform the same crystallization as described above. When you do
With the movement of the continuous light irradiation region 74, in the regions on both sides of the plurality of cooling regions 75 that are cooled by contacting the single crystal of the crystallization region 73, the single crystal regions expand due to the respective crystal growth of the crystallization region 73. . Therefore, as in the third embodiment,
A region without crystal boundaries can be enlarged, and crystallization with a larger area than that in the third embodiment can be simultaneously formed.

Here, the continuous light irradiation area 74 needs to be in contact with the previously formed crystallization area 73. Considering the accuracy of the diameter of the irradiation area and the positional accuracy of relative movement, the continuous light irradiation area 74 is considered. It is desirable that 74 partially overlaps with the crystallized region 73. Therefore, the distance between the crystallization regions 73 is smaller than the diameter of the continuous light irradiation region 74.

Further, in the continuous light irradiation area 71, the interval between the continuous light irradiation areas is set smaller than the diameter of the continuous light irradiation area, and after the crystallization area 73 is formed, the continuous light irradiation area 71 is shifted to thereby form the continuous light irradiation area. 74 may be formed.

In the fourth embodiment, the irradiation diameter and energy density of continuous light, the irradiation time of continuous light, and the relative moving speed of the continuous light irradiation region are the same as those in the above-described first embodiment.

In the first to fourth embodiments, continuous light is obtained from the harmonics of the YAG laser 60.
Although the laser light of continuous wavelength and single wavelength of 0 nm or less has been described, it is needless to say that the effect is the same even if other means are used as long as it is continuous light. It is easy to achieve, and the size of the device can be reduced by using a semiconductor laser or a semiconductor LED.

Further, in the first to fourth embodiments, the continuous light irradiation regions are used by condensing continuous light from a plurality of solid-state light-emitting elements, so that a solid-state light-emitting element with a small output is used. Can also obtain the energy required for crystallization.

Further, in the first to fourth embodiments, when a plurality of continuous light irradiation areas are simultaneously formed, one continuous light is divided and used to control a plurality of continuous light by one energy control. Energy can be controlled and the device can be simplified.

Further, in the first to fourth embodiments, each continuous light irradiation area has been described as a circular shape, but the same applies to a rectangular shape or an elliptical shape.

Further, in the first to fourth embodiments, the temperature gradient is formed by increasing the energy density in the vicinity of the center of the irradiation region with respect to the energy density in each continuous light irradiation region, and the periphery of the irradiation region is formed. By making it easy to crystallize from the (vertical direction in the figure), it is possible to form a temperature distribution in one direction, so that it is possible to prevent the formation of crystal nuclei outside the boundary between the cooling region and the crystallization region.

(Embodiment 5) FIG. 8 is a process top view for explaining a method for forming a crystallized semiconductor film according to a fifth embodiment of the present invention.

In FIG. 8A, reference numeral 80 denotes amorphous silicon as a non-single-crystal semiconductor film which is formed by depositing SiO ₂ which is an insulating film on a glass substrate by CVD or the like, and then further depositing it by CVD or the like. Membrane, 8
Reference numeral 1 is an alignment pattern for alignment. The alignment pattern 81 is formed by altering (crystallizing) the amorphous silicon film 80 by irradiation with light such as a laser.

Next, as shown in FIG. 8B, after the position of the alignment pattern 81 is detected, the relative position with respect to the alignment pattern 81 is clarified, and the first to third embodiments described above are performed. In the same manner as in the form 4, the continuous light is radiated and the continuous light is moved relative to the crystallization region 82.
To form.

By forming the alignment pattern 81 and forming the crystallization region 82 at a position relative to the alignment pattern 81, it becomes easy to specify the region in which the single crystal is formed, and the crystallized semiconductor to be formed later. The element formation using the film can be facilitated.

(Embodiment 6) FIGS. 9A to 9D are process top views for explaining a method for forming a crystallized semiconductor film according to a sixth embodiment of the present invention.

In FIG. 9A, 90 is amorphous silicon as a non-single-crystal semiconductor film which is formed by depositing SiO ₂ which is an insulating film on a glass substrate by CVD or the like and further depositing it by CVD or the like. Membrane, 9
Reference numeral 1 denotes a crystallization region formed by irradiating continuous light and moving the continuous light relative to each other as in Embodiments 1 to 4 described above.

Next, as shown in FIG. 9B, after the crystallized region 91 is formed, light such as a laser is irradiated at a position relative to the crystallized region 91 in the region where the crystallized region is not formed. Irradiation changes the quality of the amorphous silicon film 90 (crystallizes) to form an alignment pattern 92 for alignment.

In order to form the alignment pattern 92 at a relative position with respect to the crystallized region 91, the alignment
The crystallized region 91 can be specified by detecting the pattern 92, the region where the single crystal is formed can be easily specified, and the element formation using the crystallized semiconductor film later can be facilitated. You can

In the fifth and sixth embodiments, the alignment pattern is formed by irradiating the amorphous silicon film with a laser beam to change (crystallize) the alignment pattern forming region. The amorphous silicon film may be removed by a strong laser beam or the like, or may be removed by using pattern etching or the like.

(Embodiment 7) FIG. 10 shows a seventh embodiment of the present invention.
FIG. 6 is a process top view for explaining the method for forming a crystallized semiconductor film according to the embodiment of FIG.

In FIG. 10A, reference numeral 100 is a glass substrate having SiO ₂ as an insulating film formed on its surface.
01 is an alignment mark for alignment formed on the surface of the glass substrate 100 by using pattern etching or the like.
It is a pattern.

Next, an amorphous silicon film 102 as a non-single crystal semiconductor film is deposited on the entire surface by CVD or the like. At this time, the alignment pattern 101 formed on the surface of the substrate can be identified from the surface even after the amorphous silicon film 102 is deposited due to the unevenness or the difference in optical refractive index.

Next, after detecting the position of the alignment pattern 101, the relative position with respect to the alignment pattern 101 is clarified, and continuous light is irradiated in the same manner as in the above-described first to fourth embodiments, The crystallization region 103 is formed by relatively moving continuous light. Through such a process, a region where a single crystal is formed can be easily specified, and an element can be easily formed later using a crystallized semiconductor film.

In the seventh embodiment, the alignment pattern 101 is formed on the surface of the glass substrate 100 by pattern etching or the like. However, this may be done by pattern etching after forming another film. It is the same.

(Embodiment 8) FIG. 11 shows an eighth embodiment of the present invention.
FIG. 3 is a schematic device diagram for explaining a device for manufacturing a crystallized semiconductor film according to the embodiment of FIG.

In FIG. 11, reference numeral 110 holds the substrate,
An XY stage movable in XX 'and YY' directions, 111 is a substrate having an amorphous silicon film as a non-single crystal semiconductor formed on its surface, 112 is a laser light source for emitting continuous light, 113 is a mirror, Reference numeral 114 is a condenser lens, and 115 is a substrate height detector.

The continuous light supplied from the laser light source 112 is redirected by the mirror 113, and the condenser lens 1
A continuous light irradiation area having a diameter of 10 μm is formed on the surface of the substrate 111 by being condensed by 14.

Further, the continuous light irradiation area is moved by moving the substrate 111 in the XX ′ direction by the XY stage 110 while continuously supplying the continuous light of substantially constant energy. Thus, as described in the first embodiment, the crystallized silicon film can be formed in the region where the continuous light irradiation region passes.

Furthermore, the substrate 1 by the XY stage 110
When the height of the continuous light irradiation region (substrate surface) changes due to variations in the thickness of the substrate and the mechanical accuracy of the XY stage during the movement of 11, the focus position of the focusing shifts, and the size and energy density of the irradiation region change. In order to prevent the change, a mechanism for detecting the height of the substrate surface by the substrate height detector 115 and correcting the focus position by means not shown is provided.

(Embodiment 9) FIG. 12 shows a ninth embodiment of the present invention.
FIG. 3 is a schematic device diagram for explaining a device for manufacturing a crystallized semiconductor film according to the embodiment of FIG.

The ninth embodiment is almost the same as the above-described eighth embodiment, and is provided with a mechanism for condensing and forming parallel light by using a plurality of semiconductor lasers 116 as a continuous light supply source. Laser light from the plurality of semiconductor lasers 116 is condensed by the condenser lens 117, and further becomes parallel light by the concave lens 118. The parallel light is redirected by the mirror 113, condensed by the condenser lens 114, and irradiated onto the surface of the substrate 111. Similarly, XY stage 1
The irradiation region is moved by 10 to form a crystallized silicon film.

As in the ninth embodiment, by collecting continuous light from a plurality of light sources, it is possible to form a high density continuous light by using a light source with a small output by itself. Easy to miniaturize.

(Embodiment 10) FIG. 13 is a schematic device diagram for explaining an apparatus for producing a crystallized semiconductor film according to a tenth embodiment of the present invention.

The tenth embodiment is almost the same as the above-described eighth embodiment, in which the continuous light supplied from the laser light source 112 is changed in direction by the mirror 113 and is split into a plurality of lights by the slit 119. The surface of the substrate 111 is irradiated. Similarly, the irradiation region is moved by the XY stage 110 to form a crystallized silicon film.

As in the tenth embodiment, by dividing continuous light from a single light source, a plurality of continuous light irradiation areas can be formed, so that the processing capacity of the apparatus can be improved.

In the ninth or tenth embodiment, the film quality of the amorphous silicon film on the substrate surface is improved by moving the XY stage 110 to the region where the pattern for alignment is formed and irradiating the laser beam. It is possible to form an alignment pattern by changing or removing the alignment pattern. The alignment pattern is formed at a position relative to the continuous light irradiation area for crystallization (or By forming the continuous light irradiation region), it is possible to easily form the device in a region known to the alignment pattern when forming the device later using the crystallized semiconductor film.

(Embodiment 11) FIG. 14 is a schematic device diagram for explaining a crystallized semiconductor film manufacturing device according to an eleventh embodiment of the present invention.

The eleventh embodiment is almost the same as the above-described eighth embodiment, and the alignment
It is possible to recognize the pattern 120 by the pattern recognition device 121 and control the irradiation area (position) of continuous light in accordance with the position information of the XY stage 110.

By detecting the alignment pattern 120 and determining the irradiation region (position) of continuous light with respect to the alignment pattern 120, the region where the crystallized semiconductor film is formed can be determined. This allows
When the element is formed later using the crystallized semiconductor film, the element can be formed in a known region with respect to the alignment pattern 120, so that the element can be easily formed.

Note that in Embodiments 8 to 11, the energy density of continuous light with which the region where the non-single crystal semiconductor film is crystallized is 1 × 10 ⁴ W / cm ² to 1 × 1.
A constant supply is possible in the range of 0 ⁷ W / cm ² , the supplied energy is in the range of 0.1 J / cm ^{2 to 1} J / cm ² , and the irradiation time is 1 × 10 ⁻³ sec or less. Become. X
The Y stage can move at a constant speed while the substrate is irradiated with continuous light at a moving speed of 0.1 m / sec or more, and the area has a diameter of 10 μm or less.

Further, in Embodiments 1 to 11, an amorphous silicon film is used as the non-single crystal semiconductor film, but this is the same even if it is a polycrystalline silicon film. The same applies to a mixture of germanium or carbon as a component.

(Embodiment 12) FIG. 15 is a process sectional view for explaining a method for manufacturing a thin film transistor according to a twelfth embodiment of the present invention.

In FIG. 15A, reference numeral 150 is a glass substrate, and on the glass substrate 150, a SiO ₂ film 151 as a protective film by a CVD method or the like and an amorphous silicon film 152 as a non-single crystal semiconductor film are formed. Has been deposited. Here, by the continuous light irradiation described above,
The silicon film 152 is crystallized to obtain a single crystal silicon film 153.
Are formed (see FIG. 15B).

Next, as shown in FIG. 15C, pattern etching is performed so that a region of the single crystal silicon film 153 having no crystal boundary becomes an active region of the thin film transistor.
Next, a SiO ₂ film is deposited on the entire surface by a CVD method to form a gate insulating film 154, and n ⁺ containing phosphorus at a high concentration is formed.
After depositing a polycrystalline silicon film, pattern etching is performed to form a gate electrode 155. Further, by implanting phosphorus (or boron) into the single crystal silicon film 153 by using the gate electrode 155 as a mask, an n ⁺ (or p ⁺ ) impurity layer is formed to form the source / source of the thin film transistor.
The drain region 156 is formed.

[0170] Next, as shown in FIG. 15 (d), after the SiO ₂ film 157 as an interlayer insulating film on the entire surface is deposited by CVD, the source of SiO ₂ film 157 of the contact forming portion is patterned etch Wiring or drain wiring 1
58 and a wiring 159 to the gate electrode are formed to form a single crystal silicon thin film transistor.

In the twelfth embodiment, the single crystal silicon film 15 is formed by crystallizing the amorphous silicon film 152.
However, it may be a large grain size polycrystalline silicon film having crystal boundaries in the film.

Further, an amorphous silicon film is used as the non-single crystal semiconductor film, but this is the same as in the case of a polycrystalline silicon film, and further, silicon is the main component and germanium or carbon is mixed. The same is true.

(Thirteenth Embodiment) FIG. 16 is a schematic sectional view for explaining the structure of a liquid crystal display device as a display device according to a thirteenth embodiment of the present invention.

In FIG. 16, 172 is a backlight portion, 161 is a polarizing plate, 162 is a glass plate corresponding to the glass substrate in the above-mentioned embodiment, and 163 is the single crystal silicon film described in the above-mentioned twelfth embodiment. Pixel switch element composed of thin film transistor in region 1
Reference numeral 64 is a transparent pixel electrode such as ITO connected to the pixel switch element 163, 165 is an alignment film for controlling the light distribution of liquid crystal, 166 is a liquid crystal layer, 167 is an upper light distribution film, and 168 is a transparent common such as ITO. Electrodes, 169 are color filters corresponding to RGB, 170 is an upper glass plate, and 171 is a polarizing plate.

By controlling the potential of the transparent pixel electrode 164 and the polarization amount of light in the liquid crystal layer 166 by the pixel switch element 163, the light amount from the backlight section 172 can be controlled. Here, although not shown,
Pixel switch elements 163 and transparent pixel electrodes 164 are arranged in a matrix to form a pixel portion, and ON / OFF control of each pixel switch element 163 from the periphery of the pixel portion and supply voltage setting to the transparent pixel electrode 164 are performed. To form a liquid crystal display device.

In the liquid crystal display device according to the thirteenth embodiment, since the active region of the thin film transistor of the pixel switch element is formed of the single crystal silicon film, the current at the time of ON can be increased and the transparent pixel electrode can be increased. The voltage writing time can be shortened, and a high-definition / large-screen liquid crystal display device can be formed.

Further, the characteristics of the thin film transistor using the single crystal silicon film have a smaller variation compared to the case of using the polycrystalline silicon film, and by using this as the switching element of the display device, the variation in the display portion is reduced. It is possible to obtain a high quality display screen.

(Fourteenth Embodiment) FIG. 17 is a schematic sectional view for explaining the structure of an organic EL display device as a display device according to a fourteenth embodiment of the present invention.

In FIG. 17, 173 is a glass plate corresponding to the glass substrate in the above-mentioned embodiment, and 174 is a pixel switch element constituted by a thin film transistor having the active region of the single crystal silicon film described in the above-mentioned twelfth embodiment. Reference numeral 178 is an upper glass plate, 175 is a pixel electrode connected to the pixel switch element 174 for supplying a current to the laminated organic EL material 176, and 177 is a transparent electrode such as ITO.

By supplying a current to the pixel electrode 175 by the pixel switch element 174, a current flows in the organic EL material 176 to emit light. The amount of light can be controlled by controlling the current supplied by the pixel switch element 174. Here, although not shown, the pixel switch element 174
And pixel electrodes 175 are arranged in a matrix to form a pixel portion, and each pixel switch element 1 is arranged from the periphery of the pixel portion.
The organic EL display device is formed by controlling ON / OFF of 74 and controlling the supply current to the pixel electrode 175.

In the organic EL display device according to the fourteenth embodiment, since the active region of the thin film transistor of the pixel switch element is formed of the single crystal silicon film, it is possible to increase the current when it is turned on, and to the pixel portion. The current supply capability is high and the current can be sufficiently supplied to the organic EL material 176, and high-luminance display is possible.

Further, the characteristics of the thin film transistor using the single crystal silicon film have a smaller variation compared to the case of using the polycrystalline silicon film, and by using this as a switching element of the display device, the variation in the display portion is reduced. It is possible to obtain a high quality display screen.

In the thirteenth to fourteenth embodiments, the thin film transistor described in the twelfth embodiment is used only for the switch of the pixel portion, but this is the pixel switch described in the twelfth embodiment. ON / OF of element
It can also be used as an element that constitutes a control circuit that controls F and the supply voltage / current, and can form a control circuit at a higher speed than when a polycrystalline silicon film is used.

In the twelfth to fourteenth embodiments, the structure of the top gate type transistor has been explained, but this is the same for the bottom gate type transistor as long as the structure has the same requirements. The effect of can be expected.

[0185]

The effects of the method for forming a crystallized semiconductor film, the manufacturing apparatus therefor, the method for manufacturing a thin film transistor, and the display device using the same according to the present invention will be described below.

First, according to the method for forming a crystallized semiconductor film and the manufacturing apparatus therefor, a single crystal semiconductor thin film can be formed on a large substrate having a low strain point such as a glass substrate, and the conventional polycrystalline semiconductor thin film can be formed. It is possible to form a film having a higher mobility than

Further, according to the method of manufacturing a thin film transistor, since the crystallized semiconductor thin film is used, a thin film transistor capable of operating at a higher speed than the conventional polycrystalline silicon thin film transistor can be obtained, and high speed switching and a high speed operation circuit can be obtained. Can be formed. Further, since the film quality of the active region can be stabilized as compared with the polycrystalline silicon thin film transistor, the characteristics of the thin film transistor can be stabilized and made uniform.

Further, according to the display device using them, a pixel switch element capable of high-speed switching can be formed, so that a display device with high definition and large screen can be obtained. Further, since the characteristic variation of the switching element can be reduced, the image quality variation can be reduced, and a high quality display device can be obtained.

[Brief description of drawings]

FIG. 1 is a process top view for explaining a method for forming a crystallized semiconductor film according to a first embodiment of the present invention.

FIG. 2 is a process top view for explaining the growth of the single crystal film according to the first embodiment of the present invention.

FIG. 3 is a process top view for explaining a method for forming a crystallized semiconductor film according to a second embodiment of the present invention.

FIG. 4 is a process top view for explaining the growth of the single crystal film according to the second embodiment of the present invention.

FIG. 5 is a process top view for explaining a method for forming a crystallized semiconductor film according to a third embodiment of the present invention.

FIG. 6 is a process top view for explaining growth of a single crystal film according to a third embodiment of the present invention.

FIG. 7 is a process top view for explaining a method for forming a crystallized semiconductor film according to a fourth embodiment of the present invention.

FIG. 8 is a process top view for explaining a method for forming a crystallized semiconductor film according to a fifth embodiment of the present invention.

FIG. 9 is a process top view for explaining a method for forming a crystallized semiconductor film according to a sixth embodiment of the present invention.

FIG. 10 is a process top view for explaining a method for forming a crystallized semiconductor film according to a seventh embodiment of the present invention.

FIG. 11 is a schematic device diagram for explaining an apparatus for manufacturing a crystallized semiconductor film according to an eighth embodiment of the present invention.

FIG. 12 is a schematic device diagram for explaining an apparatus for manufacturing a crystallized semiconductor film according to a ninth embodiment of the present invention.

FIG. 13 is a schematic device diagram for explaining a device for manufacturing a crystallized semiconductor film according to a tenth embodiment of the present invention.

FIG. 14 is a schematic device diagram for explaining an apparatus for manufacturing a crystallized semiconductor film according to an eleventh embodiment of the present invention.

FIG. 15 is a process sectional view for explaining the manufacturing method of the thin film transistor according to the twelfth embodiment of the present invention.

FIG. 16 is a schematic cross-sectional view for explaining the configuration of a liquid crystal display device as a display device according to a thirteenth embodiment of the invention.

FIG. 17 is a schematic sectional view for explaining the configuration of an organic EL display device as a display device according to a fourteenth embodiment of the invention.

FIG. 18 is a schematic process cross-sectional view for explaining a conventional method for manufacturing a thin film transistor.

[Explanation of symbols]

10, 20, 24, 30, 40, 50, 60, 70, 8
0, 90, 102 Amorphous silicon films 11, 21, 25, 31, 34, 41, 44, 51, 5
4, 57, 61, 64, 71, 74 Continuous light irradiation areas 12, 22, 26, 32, 35, 42, 45, 52, 5
5, 58, 62, 65, 72, 75 Cooling regions 13, 23, 27, 33, 36, 43, 46, 53, 5
6,59,63,66,73,76,82,91,10
3 Crystallized Areas 81, 92, 101 Alignment Pattern 100 Glass Substrate 110 XY Stage 111 Substrate 112 Laser Light Source 113 Mirror 114 Condenser Lens 115 Substrate Height Detector 116 Semiconductor Laser 117 Condenser Lens 118 Concave Lens 119 Slit 120 Alignment Pattern 121 pattern recognition device 150 glass substrate 151 SiO ₂ film 152 amorphous silicon film 153 single crystal silicon film 154 gate insulating film 155 gate electrode 156 source / drain region 157 SiO ₂ film 158 source wiring or drain wiring 159 wiring to gate electrode 161 Polarizers 162, 173 Glass plates 163, 174 Pixel switch element 164 Transparent pixel electrode 165 Alignment film 166 Liquid crystal layer 167 Light distribution film 168 above transparent common electrode 169 Over filter 170,178 upper glass plate 171 polarizer 172 backlight unit 175 pixel electrode 176 organic EL material 177 transparent electrode 180 glass substrate 181 SiO ₂ film 182 amorphous silicon film 183 polycrystal silicon film 184 gate insulating film 185 gate electrode 186 source Drain region 187 SiO ₂ film 188 Source or drain wiring 189 Wiring to gate electrode

─────────────────────────────────────────────────── ─── Continuation of front page (51) Int.Cl. ⁷ Identification code FI theme code (reference) G09F 9/30 338 G09F 9/30 338 365 365Z 9/35 9/35 H01L 21/336 H01L 29/78 627G 29/786 627C F Term (Reference) 2H092 JA24 KA03 MA07 MA30 NA07 NA24 NA27 PA01 5C094 AA13 BA03 BA27 BA43 CA19 EA04 EA07 GB10 5F052 AA02 BA01 BA02 BA04 BA11 BA12 BA14 BA18 A01 A02 A01 A01 A02 DB01 5A09A01 A02 DB01 5A09A01 A02 DB01 5A09A01 A02 DB01 5A09A01 A02 DB01 5A09A01A02 DB01 5A09A01 CC02 CC07 DD02 DD13 EE09 FF02 FF29 GG01 GG02 GG13 GG44 HJ01 HJ13 NN02 NN23 NN35 PP03 PP04 PP05 PP06 PP07 PP23 QQ11 QQ30 5G435 AA16 AA17 BB05 BB12 CC09 HH03 KK05 KK09 KK10

Claims (40)

[Claims] 1. A method of forming a crystallized semiconductor film for crystallizing a non-single-crystal semiconductor film formed on a substrate, comprising: a step of forming a non-single-crystal semiconductor film on a substrate; and the non-single-crystal semiconductor film. Is irradiated with continuous light to melt the non-single-crystal semiconductor film in the first region, and the irradiation energy of the continuous light to the non-single-crystal semiconductor film is 0.1 J / cm 2.
^The step of relatively moving the first region so as to be constant in the range of ^{2 to 1} J / cm ² , wherein the non-single-crystal semiconductor film material melted in the first region is sequentially outside the first region. A method for forming a crystallized semiconductor film, characterized in that the non-single-crystal semiconductor film is crystallized into a crystallized semiconductor film by reaching the temperature and being cooled. 2. A method of forming a crystallized semiconductor film for crystallizing a non-single-crystal semiconductor film formed on a substrate, comprising the steps of forming a non-single-crystal semiconductor film on a substrate, and the non-single-crystal semiconductor film. Is irradiated with continuous light to melt the non-single-crystal semiconductor film in the first region, and the irradiation energy of the continuous light to the non-single-crystal semiconductor film is 0.1 J / cm 2.
A step of relatively moving the first region so as to be constant within a range of ^{2 to 1} J / cm ^{2, and} a ^second process in which the first region passes
The third region adjacent to the region and partially overlapping the second region is irradiated with continuous light to melt the non-single-crystal semiconductor film in the third region, and the continuous light to the non-single-crystal semiconductor film is irradiated. The method further comprises the step of relatively moving the third region in parallel with the second region so that the irradiation energy becomes constant in the range of 0.1 J / cm ^{2 to 1} J / cm ² , and the first region and the third region The non-single-crystal semiconductor film material melted in a region sequentially reaches the outside of the first region or the third region and is cooled, whereby the non-single-crystal semiconductor film is crystallized and becomes a crystallized semiconductor film. And a method for forming a crystallized semiconductor film. 3. A non-single crystal semiconductor film formed on a substrate is bonded.
A method of forming a crystallized semiconductor film for crystallizing, comprising:
A step of forming a non-single crystal semiconductor film,
Irradiating continuous light to the first region of the body membrane,
While melting the single crystal semiconductor film, the non-single crystal semiconductor
The irradiation energy of the continuous light on the body membrane is 0.1 J / cm.
²~ 1 J / cm²The first region so that it becomes constant in the range of
A step of relatively moving, and a second step through which the first area has passed
The continuous light is illuminated on the fourth area, which is a desired distance from the area.
When the non-single crystal semiconductor film in the fourth region is melted
In both cases, the continuous light irradiation of the non-single crystal semiconductor film is performed.
Energy is 0.1 J / cm ²~ 1 J / cm²Constant in the range
So that the fourth region is separated from the second region by a constant distance.
And moving in parallel relative to each other and the fourth region
Continue to the passed fifth area and the sixth area that is in contact with the second area
Light is irradiated to melt the non-single crystal semiconductor film in the sixth region.
With the continuous light of the non-single crystal semiconductor film
Irradiation energy is 0.1 J / cm²~ 1 J / cm²Range of
The sixth region to the second region and the front region so that
And a step of relatively moving parallel to the fifth region,
Before being melted in the first region, the fourth region, and the sixth region
The non-single-crystal semiconductor film material is sequentially formed in the first region or the
Being cooled in the fourth area or outside the sixth area
The non-single crystal semiconductor film is crystallized by the
A method of forming a crystallized semiconductor film, comprising: 4. The method for forming a crystallized semiconductor film according to claim 1, wherein a plurality of continuous lights are used to form a plurality of first regions, a third region, a fourth region, or a sixth region. A method for forming a crystallized semiconductor film, wherein the continuous light is relatively moved while irradiating the regions with the continuous light at the same time. 5. The method for forming a crystallized semiconductor film according to claim 1, wherein the energy density of continuous light with which the non-single crystal semiconductor film is irradiated is 1 × 1.
A method for forming a crystallized semiconductor film, which is in the range of 0 ⁴ W / cm ² to 1 × 10 ⁷ W / cm ² . 6. The method for forming a crystallized semiconductor film according to any one of claims 1 to 4, wherein a continuous light is applied to a desired region of the non-single crystal semiconductor film for 1 × 10 ^−3. s
A method for forming a crystallized semiconductor film, characterized in that it is ec or less. 7. The method for forming a crystallized semiconductor film according to claim 1, wherein the region irradiated with continuous light moves at a relative speed of 0.1 m / sec or more. And a method for forming a crystallized semiconductor film. 8. The crystallized semiconductor film forming method according to claim 1, wherein each region irradiated with continuous light has a diameter of 10 μm or less. Method for forming a semiconductor film. 9. The method for forming a crystallized semiconductor film according to claim 1, wherein continuous light is supplied by a solid-state light emitting device. 10. The method for forming a crystallized semiconductor film according to claim 9, wherein each continuous light is condensed and supplied from a plurality of solid state light emitting devices. . 11. The method for forming a crystallized semiconductor film according to claim 9 or 10, wherein the solid-state light emitting element is a semiconductor laser or a semiconductor LED. . 12. The method of forming a crystallized semiconductor film according to claim 4, wherein the diameter of the first region or the fourth region is larger than the distance between the second region and the fourth region. Forming method. 13. The method for forming a crystallized semiconductor film according to claim 3, wherein the sixth region overlaps both ends of the second region and the fifth region. 14. The method for forming a crystallized semiconductor film according to claim 1, wherein the continuous light is 600
A method for forming a crystallized semiconductor film, which is light having a wavelength shorter than nm. 15. The method for forming a crystallized semiconductor film according to claim 1, wherein the non-single crystal semiconductor film is an amorphous semiconductor film. Forming method. 16. The method for forming a crystallized semiconductor film according to claim 15, wherein the non-single crystal semiconductor film is a film containing amorphous silicon as a main component, and the crystallized semiconductor film is a large grain polycrystalline silicon film or A method for forming a crystallized semiconductor film, which is a single crystal silicon film. 17. The method for forming a crystallized semiconductor film according to claim 1, wherein the strain point of the substrate is lower than the crystallization temperature of the non-single crystal semiconductor film formed on the substrate. A method for forming a crystallized semiconductor film, comprising: 18. The method for forming a crystallized semiconductor film according to claim 1, wherein a plurality of seventh regions in which a non-single crystal semiconductor film is formed and which is not crystallized are provided, and the seventh region is provided. After the step of changing the quality of the non-single crystal semiconductor film in the region in which the first alignment pattern for alignment is formed by light irradiation, each of the continuous lights is changed to the first light.
A method for forming a crystallized semiconductor film, which comprises moving relative to an alignment pattern so that its relative position is clear. 19. The method for forming a crystallized semiconductor film according to claim 1, wherein after the crystallized semiconductor film is formed by a plurality of continuous light irradiation regions, the plurality of continuous light irradiation regions are formed. A method for forming a crystallized semiconductor film, comprising the step of forming a second alignment pattern for alignment in an eighth region whose relative position is clear with respect to. 20. The method for forming a crystallized semiconductor film according to claim 1, wherein the substrate or the surface of the substrate on which the third alignment pattern for alignment is formed is non-single-layered. A method for forming a crystallized semiconductor film, wherein a crystal semiconductor film is formed, and each continuous light beam moves relative to the third alignment pattern so that its relative position is clear. 21. A mechanism for holding a substrate, and a mechanism for holding a substrate surface.
A mechanism for irradiating continuous light to a part or a plurality of parts to melt the non-single-crystal semiconductor film formed on the surface of the substrate, and a continuous light irradiation region with irradiation energy of the continuous light of 0.1 J / cm
An apparatus for producing a crystallized semiconductor film, which has a mechanism of relatively moving it so as to be constant within a range of ^{2 to 1} J / cm ² . 22. The apparatus for producing a crystallized semiconductor film according to claim 21, wherein the energy density of continuous light with which the non-single crystal semiconductor film is irradiated is 1 × 10 ⁴ W / cm ² to 1 × 10 ⁷ W /
An apparatus for producing a crystallized semiconductor film, which has a mechanism for making it constant within a range of cm ² . 23. The apparatus for producing a crystallized semiconductor film according to claim 21, wherein the substrate is moved relative to the desired region of the non-single crystal semiconductor film so that the time of continuous light irradiation is 1 × 10 ⁻³ sec or less. An apparatus for producing a crystallized semiconductor film, which has a mechanism capable of mechanically moving. 24. The apparatus for producing a crystallized semiconductor film according to claim 21, wherein the area irradiated with continuous light is 0.1 m /
An apparatus for producing a crystallized semiconductor film, which has a mechanism of moving at a relative speed of sec or more. 25. The apparatus for producing a crystallized semiconductor film according to claim 21, wherein each of the regions irradiated with continuous light has a diameter of 10 μm or less. 26. The apparatus for producing a crystallized semiconductor film according to claim 21, wherein continuous light is supplied by a solid state light emitting element. 27. The apparatus for producing a crystallized semiconductor film according to claim 21, wherein each continuous light is condensed and supplied from a plurality of solid state light emitting elements. . 28. The apparatus for producing a crystallized semiconductor film according to claim 21, further comprising a mechanism for dividing one light condensed from one solid light emitting element or a plurality of solid light emitting elements into a plurality of continuous lights. An apparatus for producing a crystallized semiconductor film, comprising: 29. The apparatus for producing a crystallized semiconductor film according to claim 26, wherein the solid-state light emitting element is a semiconductor laser or a semiconductor LED. . 30. The crystallized semiconductor film manufacturing apparatus according to claim 21, further comprising a mechanism for keeping a relative moving speed constant while the substrate is irradiated with continuous light. Manufacturing equipment. 31. The apparatus for producing a crystallized semiconductor film according to claim 21, wherein the height of the surface of the substrate is detected against variations in substrate thickness, undulations, and deviations in relative movement due to relative movement of the substrate, An apparatus for producing a crystallized semiconductor film, which has a mechanism for keeping the focus of light always constant. 32. The apparatus for producing a crystallized semiconductor film according to claim 21, further comprising a mechanism for forming a first alignment pattern for alignment in a region different from continuous light irradiation for crystallization, An apparatus for manufacturing a crystallized semiconductor film, comprising a mechanism for controlling a relative position with respect to the first alignment pattern to relatively move an irradiation position of continuous light. 33. The apparatus for producing a crystallized semiconductor film according to claim 21, wherein the first alignment pattern for alignment, which is formed on the substrate or the substrate surface, is detected,
An apparatus for manufacturing a crystallized semiconductor film, comprising a mechanism for controlling a relative position with respect to the first alignment pattern to relatively move an irradiation position of continuous light. 34. The apparatus for producing a crystallized semiconductor film according to claim 21, further comprising a mechanism for forming an alignment pattern for alignment in a region whose relative position is distinct from the continuous light irradiation region. Crystalline semiconductor film manufacturing equipment. 35. The apparatus for producing a crystallized semiconductor film according to claim 32 or 34, wherein the alignment pattern has a mechanism formed by modifying the non-single crystal semiconductor film by light. An apparatus for producing a crystallized semiconductor film, comprising: 36. At least the method for forming a crystallized semiconductor film according to any one of claims 1 to 20 and the apparatus for producing a crystallized semiconductor film according to any one of claims 21 to 35 are used. Forming a crystallized semiconductor film on the substrate, a step of patterning and etching a desired single crystal region of the crystallized semiconductor film to form an active region, an insulating film and a conductive material are formed on the entire surface, and the conductive material is formed. Pattern etching to form a gate electrode, a gate insulating film, and a gate wiring, and an n-type or p-type source / drain region.
A method of forming a thin film transistor, which comprises a step of introducing a type impurity and a step of forming a source wiring and a drain wiring. 37. The method of forming a thin film transistor according to claim 36, wherein the pattern for forming the active region is formed by aligning with the alignment pattern formed by any one of claims 18 to 20. A method of forming a thin film transistor, comprising: 38. The method of forming a thin film transistor according to claim 36, wherein the non-single crystal semiconductor is an amorphous semiconductor film, and the amorphous semiconductor film is selectively removed with respect to a crystallized semiconductor film. Then, a method of forming a thin film transistor, which comprises forming an active region in accordance with the crystallized semiconductor film. 39. A pair of substrates each having an electrode on each surface thereof, and a liquid crystal layer sandwiched between the pair of substrates arranged so that the electrodes face each other, and one inner side of the pair of substrates. Thin film transistors as switching elements are arranged in a matrix on the surface, and ON / OFF of a voltage signal to a pixel electrode supplied from a signal wiring by the thin film transistor is controlled to control an electric field to a liquid crystal material so that light A liquid crystal display device having a structure for controlling the amount of polarization, wherein the thin film transistor is formed by the method for manufacturing a thin film transistor according to any one of claims 36 to 38. 40. A thin film transistor according to any one of claims 36 to 38 is arranged in a matrix form in a single or plural number and is used as a switching element for controlling power supply to an organic EL material. Organic EL display device.