JP2007042980A - Crystalline semiconductor film and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a crystalline semiconductor film having proper electrical characteristics and suppressed variations in the electrical characteristics, and to provide a manufacturing method for easily manufacturing it. <P>SOLUTION: The manufacturing method of the crystalline semiconductor film comprises the steps of preparing a polycrystalline semiconductor film (120); forming an amorphizing region having crystallinity lower than that of the polycrystalline semiconductor film (120) in at least a partial region of the polycrystalline semiconductor film (120), by injecting predetermined elements (130) into at least the partial region of the polycrystalline semiconductor film (120), wherein the predetermined elements (130) are injected so that the absorption factor of an amorphizing region for a predetermined energy beam (150) continuously changes along a predetermined direction; and crystallizing the more amorphous region, by irradiating the amorphizing region with the predetermined energy beam (150). <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a crystalline semiconductor film obtained by crystallizing an amorphous region and a method for manufacturing the same.

  In recent years, thin film semiconductor elements typified by thin film transistors (hereinafter sometimes referred to as “TFTs”), diodes, and the like have been widely used. The TFT uses, as an active layer, a semiconductor film with a thickness of several tens to several hundreds of nanometers formed on an insulating substrate by using a CVD (Chemical Vapor Deposition) method, for example. As an application field of TFT, there is an active matrix type liquid crystal display device. In an active matrix liquid crystal display device, one or more TFTs are arranged in each of hundreds of thousands or more of pixel electrodes arranged in rows and columns (matrix), and the amount of electric charge supplied to the pixel electrodes Is controlled by the TFT.

  An amorphous semiconductor film, which is one of the semiconductor films, can be easily manufactured. However, since the amorphous semiconductor film has low carrier mobility, an amorphous semiconductor film is used for a TFT that requires high-speed operation. A crystalline semiconductor film capable of realizing higher carrier mobility is preferably used. The crystalline semiconductor film is, for example, a polycrystalline semiconductor film or a microcrystalline semiconductor film.

  As a method of forming a polycrystalline semiconductor film, a method of crystallizing an amorphous semiconductor film by irradiating an amorphous semiconductor film provided over a substrate with pulsed laser light is known. In this method, the temperature of the amorphous semiconductor film is increased by irradiation with pulsed laser light, and the amorphous semiconductor film is in a molten state. When the irradiation with the pulsed laser light is stopped, the temperature of the amorphous semiconductor film is decreased, and the amorphous semiconductor film is solidified (crystallized), whereby a polycrystalline semiconductor film is formed. According to this method, since a high energy can be given only to the amorphous semiconductor film without greatly increasing the temperature of the substrate, it is possible to form a polycrystalline semiconductor film using an inexpensive glass substrate as the substrate. it can.

  However, the crystal grain size of the polycrystalline semiconductor film manufactured by this method is 1 μm or less, and when a TFT is manufactured using this polycrystalline semiconductor film, many crystal grains exist in the channel region of the TFT. It will be. Therefore, when the crystal grain size is small in this way, crystal defects present at the crystal grain boundaries become carrier traps, and the carrier mobility decreases non-uniformly.

  As a similar method using laser light, there is known a method of recrystallizing a polycrystalline semiconductor film by irradiating a polycrystalline semiconductor film made amorphous by ion implantation with laser light. According to this method, due to recrystallization, the crystal grain size becomes larger than the crystal grain size before recrystallization.

  Patent Document 1 discloses a method for recrystallizing a polycrystalline silicon film. In this method, an ion implantation mask (resist mask) is provided on the polycrystalline silicon film, and ions are selectively implanted into a predetermined region of the polycrystalline silicon film to form an amorphous region. Next, the ion implantation mask is removed, and the amorphous region is recrystallized by irradiating the amorphous region with laser light.

  Patent Document 2 discloses another method for recrystallizing polycrystalline silicon. In this method, polycrystalline silicon having plane orientation anisotropy is formed on an insulating film, a portion of the polycrystalline silicon is covered with a resist mask, and ions are selectively implanted into a predetermined region of the polycrystalline silicon. For convenience, a portion of polycrystalline silicon into which ions are implanted is referred to as an ion implanted portion, and a portion of polycrystalline silicon into which ions are not implanted is referred to as an ion non-implanted portion. The light absorption coefficient (absorption rate) of the ion-implanted portion becomes higher than that of the non-ion-implanted portion.

Thereafter, the resist mask is removed, and laser light is scanned from the ion non-implanted portion to the ion implanted portion. When laser light is irradiated, due to the difference in light absorption coefficient, the ion non-implanted portion is in a semi-molten state and the ion-implanted portion is in a completely molten state. In the method disclosed in Patent Document 2, laser light is scanned, and recrystallization is performed using unmelted silicon as a seed crystal in a semi-molten ion non-implanted portion. Since unmelted silicon has plane orientation anisotropy, the plane orientation of polycrystalline silicon is reflected in the recrystallized crystal.
JP-A-6-333827 JP-A-1-147824

  However, the method disclosed in Patent Document 1 cannot form crystal grains having a large crystal grain size. In the method disclosed in Patent Document 1, when the irradiation of the laser beam to the non-crystalline region is stopped, the heat of the non-crystalline region diffuses outward, and the temperature of the non-crystalline region is changed from the end of the non-crystalline region. Declines rapidly. Accordingly, the cooling rate of the non-crystalline region is increased, and crystal grains having a small crystal grain size are formed. Further, in the method disclosed in Patent Document 1, since the crystal grows from the end of the non-crystalline region toward the center of the non-crystalline region, the crystal grains collide at the center of the non-crystalline region, resulting in a large size. Crystal grains cannot be formed. As described above, when the crystal grain size is small, crystal defects existing in the crystal grain boundary serve as carrier traps and carrier mobility is lowered.

  Further, in the method disclosed in Patent Document 1, ions are selectively implanted by covering a predetermined region of the polycrystalline silicon film with an ion implantation mask (resist mask), so that an ion implantation mask is formed. Therefore, it is necessary to perform a photolithography process and a process for removing the ion implantation mask, resulting in an increase in the number of processes and cost.

  In addition, the method disclosed in Patent Document 2 requires scanning with laser light in order to perform crystallization. Therefore, the time and cost for crystallization increase.

  Further, if pulse laser light is used for crystallization in the method disclosed in Patent Document 2, when the pulsed laser light is irradiated onto the polycrystalline silicon once, a region irradiated with the laser light (hereinafter referred to as “irradiation”). The temperature of the region is referred to as “region”. The temperature rapidly decreases from the end of the irradiation region, so that the distance of crystal growth (hereinafter referred to as “crystal growth distance”) by one irradiation of the pulse laser beam is short. Therefore, in order to form a crystal grain having a large crystal grain size, it is necessary to shorten the scanning distance for each irradiation of the pulse laser beam, and the time and cost for crystallization increase.

  In addition, since the absorption coefficient of the ion implantation part is significantly different from the absorption coefficient of the ion non-implantation part, if the region including the boundary between the ion implantation part and the ion non-implantation part is irradiated with pulsed laser light, the ion implantation part and the ion non-implantation The temperature at the boundary with the part changes abruptly. In this case, since the crystal growth distance is particularly short, it is necessary to particularly shorten the scanning distance for each irradiation of the pulse laser beam.

  Further, in the method disclosed in Patent Document 2, ions are implanted near the surface of the polycrystalline silicon, and the polycrystalline silicon is formed between the ion implanted portion and the base insulating film. May remain. In this case, when the laser beam is irradiated, before the crystal growth proceeds in the lateral direction, each remaining crystal becomes a nucleus and the crystal growth proceeds in the thickness direction, so that a large crystal grain cannot be formed.

  Further, in the method disclosed in Patent Document 2, ions are selectively implanted by covering a predetermined region of polycrystalline silicon with a resist mask, so that a photolithography process and a resist for forming the resist mask are performed. It is necessary to perform a step of removing the mask, and as a result, the number of steps and cost increase.

  An object of the present invention is to provide a crystalline semiconductor film having favorable electrical characteristics and suppressing variation in electrical characteristics, and a manufacturing method for easily manufacturing the crystalline semiconductor film.

  The method for manufacturing a crystalline semiconductor film according to the present invention includes a step of preparing a polycrystalline semiconductor film, and implanting a predetermined element into at least a partial region of the polycrystalline semiconductor film, thereby crystallizing the polycrystalline semiconductor film. Forming an amorphized region having a crystallization rate lower than the crystallization rate in the at least part of the polycrystalline semiconductor film, wherein the absorptivity of the amorphized region with respect to a predetermined energy beam Injecting the predetermined element so that continuously changes along a predetermined direction, and irradiating the amorphized region with the predetermined energy beam, Crystallizing.

  In one embodiment, the step of forming the amorphized region includes the predetermined element so that the concentration of the predetermined element in the amorphized region continuously changes along the predetermined direction. Injecting.

  In one embodiment, the step of injecting the predetermined element includes the step of injecting the concentration of the predetermined element in the amorphized region from the vicinity of the end of the amorphized region along the predetermined direction. And a step of implanting the predetermined element so as to be lower in the vicinity of the center of the amorphized region.

  In one embodiment, the step of forming the amorphized region includes a step of implanting the predetermined element by an ion implantation method or an ion doping method.

  In one embodiment, the step of forming the amorphized region includes changing the acceleration energy so that the concentration of the predetermined element is substantially constant over the entire thickness direction of the polycrystalline semiconductor film. A step of implanting the element a plurality of times.

  In one embodiment, the step of forming the amorphized region includes a step of implanting the predetermined element with an energy of 1 KeV or more and 200 KeV or less.

In one embodiment, the step of forming the amorphized region includes a step of implanting the predetermined element in a dose range of 1 × 10 ¹² atoms / cm ^{2 to} 9 × 10 ¹⁷ atoms / cm ^2. .

  In one embodiment, in the step of forming the amorphized region, the predetermined element includes at least one of an element of a material constituting the polycrystalline semiconductor film and an element belonging to a rare gas.

  In one embodiment, the step of crystallizing the amorphized region includes the step of crystallizing using light as the predetermined energy beam.

  In one embodiment, the step of forming the amorphized region controls the absorptivity of the amorphized region with respect to the predetermined energy beam by changing a crystallization rate of the amorphized region. The process of carrying out.

  In one embodiment, in the step of preparing the polycrystalline semiconductor film, the polycrystalline semiconductor film contains silicon.

  In one embodiment, in the step of preparing the polycrystalline semiconductor film, the thickness of the polycrystalline semiconductor film ranges from 10 nm to 200 nm.

  In one embodiment, the step of crystallizing the amorphized region includes a step of using a laser beam having a wavelength of 200 nm or more and 400 nm or less as the predetermined energy beam.

In certain embodiments, the step of crystallizing the amorphous region comprises the step of energy density used 250 mJ / cm ² or more 500 mJ / cm ² or less of the pulsed laser beam as the predetermined energy beam.

  In one embodiment, the step of crystallizing the amorphized region includes a step of growing the crystal in a lateral direction.

  In one embodiment, the step of crystallizing the amorphized region crystallizes the amorphized region from a low concentration portion to a high concentration portion of the predetermined element in the amorphized region. The process of carrying out.

  In one embodiment, the step of crystallizing the amorphized region includes a step of scanning the predetermined energy beam in the predetermined direction.

  In one embodiment, the step of crystallizing the amorphized region includes a step of irradiating the amorphized region with an energy beam having a substantially constant energy density along the predetermined direction.

  In one embodiment, the step of preparing the polycrystalline semiconductor film includes a step of forming the polycrystalline semiconductor film on a substrate.

  The crystalline semiconductor film of the present invention is manufactured by the above manufacturing method.

  A semiconductor device of the present invention includes the above crystalline semiconductor film.

  A display device of the present invention includes the above-described semiconductor device.

  According to the present invention, it is possible to provide a crystalline semiconductor film having favorable electrical characteristics and suppressing variation in electrical characteristics, and a manufacturing method for easily manufacturing the crystalline semiconductor film. In addition, according to the present invention, a semiconductor device and a display device including the crystalline semiconductor film can be provided.

(Embodiment 1)
Hereinafter, a first embodiment of a crystalline semiconductor film and a method for manufacturing the same according to the present invention will be described with reference to FIGS.

  As shown in FIG. 1A, a polycrystalline semiconductor film 120 is prepared. Here, the polycrystalline semiconductor film 120 is formed over the substrate 110. For example, the substrate 110 is an insulating substrate such as a glass substrate, and the polycrystalline semiconductor film 120 is a polycrystalline silicon film made of silicon.

  As shown in FIG. 1B, a predetermined element 130 is implanted into the polycrystalline semiconductor film 120. The length of the arrow shown in FIG. 1B corresponds to the dose of the predetermined element 130 implanted into the polycrystalline semiconductor film 120. The longer the arrow, the greater the dose of the predetermined element 130. It is shown that. The dose amount of the predetermined element 130 implanted into the polycrystalline semiconductor film 120 is small in the vicinity of the central portion of the polycrystalline semiconductor film 120 along the predetermined direction, and is increased in the vicinity of the end portion of the polycrystalline semiconductor film 120. It changes continuously. This predetermined direction is the same as the direction in which the crystal grows later, and may be referred to as a “crystallization direction” in this specification. Here, the same element (for example, silicon) as the element constituting the polycrystalline semiconductor film 120 is implanted into the polycrystalline semiconductor film 120 as the predetermined element 130. This element is ionized and implanted into the polycrystalline semiconductor film 120 by ion implantation or ion doping. In the following description, the predetermined element 130 may be referred to as an amorphizing element 130.

  The implantation apparatus (not shown) emits the amorphizing element 130 into the implantation region 160 shown in FIG. 1C, and the amorphizing element 130 enters the implantation region 160 in the polycrystalline semiconductor film 120. It is injected into the corresponding area. The implantation region 160 has a shape extending in a direction substantially perpendicular to the crystallization direction. The amorphous region 130 is implanted into the polycrystalline semiconductor film 120 by moving the implantation region 160 relative to the polycrystalline semiconductor film 120 along the crystallization direction.

  Here, the implantation region 160 is moved by changing the relative speed of the implantation region 160 with respect to the polycrystalline semiconductor film 120, and a certain amount of the amorphizing element 130 is periodically emitted to the implantation region 160. When the relative speed is low, the dose of the amorphizing element 130 implanted into the polycrystalline semiconductor film 120 increases, and when the relative speed is high, the amount of the amorphizing element 130 implanted into the polycrystalline semiconductor film 120 increases. The dose is reduced. By changing the relative speed in this way, the dose of the amorphizing element 130 implanted into the polycrystalline semiconductor film 120 can be adjusted according to the position of the polycrystalline semiconductor film 120. Alternatively, by moving the implantation region 160 while keeping the relative velocity of the implantation region 160 with respect to the polycrystalline semiconductor film 120 constant, the amount of the amorphizing element 130 emitted to the implantation region 160 is changed with time. The dose of the amorphizing element 130 implanted into the polycrystalline semiconductor film 120 may be adjusted.

  By injecting the amorphizing element 130 into the polycrystalline semiconductor film 120, the polycrystalline semiconductor film 120 is amorphized. More specifically, when the amorphizing element 130 is implanted into the polycrystalline semiconductor film 120, bonds between atoms in the polycrystalline semiconductor film 120 are broken, and the crystallization rate of the polycrystalline semiconductor film 120 decreases. The polycrystalline semiconductor film 120 is amorphized. As described with reference to FIG. 1C, the dose of the amorphizing element 130 is adjusted according to the position of the polycrystalline semiconductor film 120, and the degree of amorphization is determined according to the position of the polycrystalline semiconductor film. It depends on the position of 120.

  As shown in FIG. 1D, an amorphous region 140 is formed by making the polycrystalline semiconductor film 120 amorphous. In this specification, a region in which the amorphous element 130 is implanted in the polycrystalline semiconductor film 120 is referred to as an amorphized region 140. FIG. 1B shows that the amorphous element 130 is implanted into the entire surface of the polycrystalline semiconductor film 120. Correspondingly, FIG. 1D shows the polycrystalline semiconductor film 120. Although the amorphous region 140 is shown, the amorphous element 130 is selectively implanted into a predetermined region of the polycrystalline semiconductor film 120, and an amorphous region is formed in a part of the polycrystalline semiconductor film 120. The quality region 140 can also be selectively formed.

  Since the concentration of the amorphizing element 130 in the amorphizing region 140 corresponds to the dose of the amorphizing element 130, as shown in FIG. 2A, the amorphous element 130 is amorphous along a predetermined direction. It continuously changes so as to be high near the end of the quality region 140 and low near the center of the amorphous region 140. Note that the concentration of the amorphizing element 130 in the amorphizing region 140 is substantially constant along a direction substantially orthogonal to a predetermined direction.

The concentration of the amorphizing element 130 in the amorphized region 140 is substantially constant from the surface of the amorphized region 140 to the thickness direction. In order to make the concentration of the amorphizing element 130 in the amorphizing region 140 almost constant over the thickness direction, the amorphizing element 130 may be implanted a plurality of times while changing the acceleration energy. When the acceleration energy is increased, the amorphizing element 130 can be injected into a relatively deep portion of the polycrystalline semiconductor film 120. When the acceleration energy is decreased, the amorphizing element 130 is compared with the polycrystalline semiconductor film 120. Can be injected into shallow areas. The energy when implanting the amorphizing element 130 is, for example, 1 KeV or more and 200 KeV or less, and the dose amount is, for example, 1 × 10 ¹² atoms / cm ² or more and 9 × 10 ¹⁷ atoms / cm ² or less.

  As the concentration of the amorphizing element 130 in the amorphized region 140 is higher, the amorphization progresses and the crystallization rate of the amorphized region 140 is lower. Therefore, as shown in FIG. 2B, the crystallization rate of the amorphized region 140 is low near the end of the amorphized region 140 along the crystallization direction and high near the center. It changes slowly and continuously. Here, the crystallization rate indicates the volume ratio of the crystal component, and the crystallization rate is measured by Raman spectroscopy.

  Due to the change in the crystallization rate of the amorphized region 140, the absorptivity of the amorphized region 140 with respect to a predetermined energy beam 150 (see FIG. 1E) changes gradually and continuously along the crystallization direction. To do. More specifically, the lower the crystallization rate of the amorphized region 140 (that is, the more amorphous the portion), the higher the absorptivity of the amorphized region 140. Accordingly, as shown in FIG. 2C, the absorptivity of the amorphized region 140 with respect to the predetermined energy beam 150 is high near the end of the amorphized region 140 along the crystallization direction. It changes gradually and continuously so as to be lower in the vicinity of the central portion of the conversion region 140. The absorptance of the amorphized region 140 is measured using, for example, an ultraviolet-visible spectrophotometer.

As shown in FIG. 1E, the amorphized region 140 is (re) crystallized by irradiating the amorphized region 140 with a predetermined energy beam 150. Thereby, the amorphous region 140 becomes a crystallized region. The energy beam 150 is, for example, pulse laser light having a wavelength of 200 nm to 400 nm and a pulse width of 1 to 100 ns (preferably 40 ns). Here, the length along the crystallization direction of the beam profile of the energy beam 150 is longer than the length along the crystallization direction of the region into which the amorphizing element 130 is implanted, and the energy beam along the crystallization direction. The energy density of 150 is almost constant. Incidentally, the energy beam 150 is preferably energy density of 250 mJ / cm ² or more 500 mJ / cm ² or less of the pulsed laser beam. If the energy density of the energy beam 150 is less than 250 mJ / cm ^{2, the} amorphized region 140 cannot be sufficiently melted, the crystal grain size becomes small, and the energy density of the energy beam 150 is 500 mJ / cm ^2. If it is larger than cm ² , a part of the amorphized region 140 may be scattered.

  When the energy beam 150 is irradiated to the amorphized region 140, the energy beam 150 is absorbed by the amorphized region 140, and the temperature of the amorphized region 140 is increased. Becomes molten. The higher the absorptivity of the amorphized region 140, the more energy beam 150 is absorbed by the amorphized region 140, the higher the temperature of the amorphized region 140, and the amorphized region 140 becomes higher. As shown in FIG. 2 (d), the temperature of is gradually lowered so as to be low near the center of the amorphized region 140 and high near the end of the amorphized region 140 along a predetermined direction. It changes continuously.

  When the irradiation of the energy beam 150 is stopped and the temperature of the amorphized region 140 is lowered to the melting point, the amorphized region 140 is crystallized (solidified). As shown in FIG. 2D, the temperature of the amorphized region 140 is lowest in the vicinity of the central portion of the amorphized region 140 due to the irradiation with the energy beam 150, and the central portion of the amorphized region 140. Since it gradually and continuously increases from the vicinity toward the end, the vicinity of the center of the amorphized region 140 is crystallized first, and the amorphized region 140 is crystallized from the vicinity of the center toward the end. It will become solidified. That is, the crystal formed in the vicinity of the center of the amorphized region 140 becomes a seed crystal, and the crystal grows laterally toward the end of the amorphized region 140. By performing crystal growth in this way, a crystalline semiconductor film having crystal grains with a large crystal grain size is manufactured.

  According to the present embodiment, since the temperature of the amorphized region 140 changes gradually and continuously along the crystallization direction, the cooling rate of the amorphized region 140 becomes slow. As a result, the crystal growth distance by one pulse irradiation becomes long, and the crystal grain size can be increased (for example, the crystal grain size is set to 5 μm or more). Therefore, according to this embodiment, a crystalline semiconductor film having a crystal grain with a large crystal grain size can be manufactured, carrier mobility in the crystalline semiconductor film is increased, and variation in electrical characteristics is suppressed. Can do.

  Further, according to the present embodiment, the concentration of the amorphizing element 130 in the amorphized region 140 is adjusted by changing the relative speed of the implantation region 160 with respect to the polycrystalline semiconductor film 120. Unlike the methods disclosed in Patent Document 1 and Patent Document 2, there is no need to perform a photolithography process for providing a resist mask and a process for removing the resist mask, thereby simplifying the manufacturing method. it can.

  Further, according to the present embodiment, since the concentration of the amorphizing element 130 in the thickness direction in the amorphized region 140 is substantially constant, crystals remain in the amorphized region 140. Thus, the crystal can be prevented from growing in the thickness direction before lateral growth.

  Further, according to the present embodiment, the amorphous region 140 is crystallized from a low temperature portion, that is, a portion where the concentration of the amorphizing element 130 in the amorphous region 140 is low. By controlling the position where the quality element 130 is injected, the position where the crystal grains are formed can be easily controlled.

  In addition, according to the present embodiment, since a crystal grain having a large crystal grain size is formed from a portion where the concentration of the amorphizing element 130 is low, a portion where the concentration of the amorphizing element 130 is low is reduced to a semiconductor element (for example, , TFT) as an active layer, a semiconductor device having a semiconductor element with excellent electrical characteristics can be manufactured.

  In the case of forming a plurality of crystallized regions, a plurality of amorphized regions 140 extending in parallel are formed on one relatively large polycrystalline semiconductor film 120. The length of each amorphous region 140 along the crystallization direction is, for example, 10 μm. When the polycrystalline semiconductor film 120 having such an amorphized region 140 is irradiated with an energy beam having a rectangular flat shape with a long side of about 300 mm and a short side of about 0.4 mm, for example, an amorphous region is obtained. Each of the crystallized regions 140 is crystallized to form crystal grains having a large crystal grain size (for example, a crystal grain size of 5 μm). The crystal region obtained by recrystallizing the plurality of amorphous regions 140 in this manner is used as, for example, an active layer of a plurality of TFTs.

  In the above description, the entire amorphized region 140 is crystallized by one irradiation of the energy beam 150, but the present embodiment is not limited to this. The concentration of the amorphizing element 130 in the amorphized region 140 is non-uniform so as to monotonously increase from one end 140a along the crystallization direction of the amorphized region 140 toward the other end 140b. The crystallizing element 130 is implanted, and as shown in FIG. 1F, the energy beam 150 is directed along the crystallization direction from one end 140a of the amorphized region 140 toward the other end 140b. The amorphous region 140 may be crystallized by scanning. Here, the length along the crystallization direction of the beam profile of the energy beam 150 is shorter than the length along the crystallization direction of the amorphized region 140. For example, the length of the short side (side along the crystallization direction) of the beam profile of the energy beam 150 is about 2 μm. On the other hand, the length of the long side (side orthogonal to the side along the crystallization direction) of the beam profile of the energy beam 150 may be on the order of several hundred mm, and the length of the long side is the polycrystalline semiconductor film 120. Can be set according to the size. In order to form such a beam profile of the energy beam 150, a slit may be used. The energy beam 150 is scanned by 1 μm along the crystallization direction. When scanning with the pulse laser beam, the interval at which the pulse laser beam is irradiated is, for example, 1 to 20 μm.

  In the above description, the pulse laser beam is exemplified as the energy beam, but the present embodiment is not limited to this. A CW (continuous wave) laser beam may be used as the energy beam. Alternatively, an energy beam other than laser light (for example, a heat source such as a line heater) may be used.

  In the above description, a silicon film is exemplified as the polycrystalline semiconductor film 120, but the present embodiment is not limited to this. The polycrystalline semiconductor film 120 may be a SiGe film, a GaAs film, a GaP film, an InP film, or the like.

  In the above description, silicon is exemplified as the amorphizing element 130, but the present embodiment is not limited to this. Another element may be used as the amorphizing element 130 depending on the polycrystalline semiconductor film 120. Alternatively, the amorphizing element 130 may be an element belonging to a rare gas such as He, Ne, Ar, Xe, or Kr. Alternatively, the amorphizing element 130 may be a mixture of these, or may include at least one of these elements. Also in these cases, the element is ionized and implanted into the polycrystalline semiconductor film 120 by an ion implantation method or an ion doping method.

  In addition, the thickness of the polycrystalline semiconductor film 120 is preferably in the range of 10 nm to 200 nm. In general, since the base film (substrate) disposed under the polycrystalline semiconductor film 120 has high thermal conductivity, the energy beam 150 is emitted from the polycrystalline semiconductor film 120 when the polycrystalline semiconductor film 120 is thinner than 10 nm. The formed amorphized region 140 is not sufficiently absorbed but is absorbed by the base film (substrate), and as a result, it is difficult to melt the amorphized region 140. If the polycrystalline semiconductor film 120 is thicker than 200 nm, excessive energy is required to melt the amorphized region 140, and the amorphized region 140 cannot be stably melted. It becomes difficult to cause a gradual temperature change in the crystallized region 140.

  According to this embodiment, a crystalline semiconductor film having crystal grains with a large crystal grain size can be produced. When a TFT is manufactured using this crystalline semiconductor film, a TFT having a low threshold voltage can be obtained and power consumption can be suppressed. In addition, since variation in electrical characteristics of the crystalline semiconductor film is suppressed, a highly reliable semiconductor element can be manufactured using the crystalline semiconductor film.

(Embodiment 2)
The second embodiment of the crystalline semiconductor film and the method for manufacturing the same according to the present invention will be described below with reference to FIGS.

As shown in FIG. 3A, an SiO ₂ film 112 is formed on the glass substrate 110. The thickness of the SiO ₂ film 112 is, for example, 200 nm, and the SiO ₂ film 112 is formed by a plasma CVD method using TEOS (tetraethoxysilane) gas and O ₃ gas.

As shown in FIG. 3B, a polycrystalline silicon film 120 is formed on the entire surface of the SiO ₂ film 112. The thickness of the polycrystalline silicon film 120 is, for example, 50 nm, and the polycrystalline silicon film 120 is formed by a low pressure CVD method using SiH ₄ gas.

  As shown in FIG. 3C, silicon 130 is implanted as a predetermined element into the polycrystalline silicon film 120 by ion implantation or ion doping. Similarly to FIG. 1B, the length of the arrow shown in FIG. 3C also corresponds to the dose of silicon 130 implanted into the polycrystalline silicon film 120. The longer the arrow, the more the silicon 130 It shows that the dose is large. The dose of silicon 130 implanted into the polycrystalline silicon film 120 continuously changes so as to decrease in the vicinity of the center of the polycrystalline silicon film 120 and increase in the vicinity of the end along the crystallization direction.

Again, as described with reference to FIG. 1C, the relative velocity of the implantation region 160 with respect to the polycrystalline silicon film 120 is changed in accordance with the dose of the silicon 130 to be implanted, so that many silicon ions are present. Implanted into the crystalline silicon film 120. The dose of silicon 130 is in the range of 1 × 10 ¹² atoms / cm ^{2 to} 9 × 10 ¹⁷ atoms / cm ² .

  As shown in FIG. 3D, the implantation of silicon 130 lowers the crystallization rate of the polycrystalline silicon film 120 and forms an amorphized region 140. As shown in FIG. 4A, the concentration of silicon 130 in the amorphized region 140 is low near the center of the amorphized region 140 along the crystallization direction and high near the end. , Continuously changing.

  The higher the concentration of silicon 130 in the amorphized region 140, the lower the crystallization rate of the amorphized region 140. Therefore, as shown in FIG. 4B, the crystallization rate of the amorphized region 140 is high near the center of the amorphized region 140 along the crystallization direction and low near the end. It changes slowly and continuously.

  The lower the crystallization rate of the amorphized region 140, the higher the absorptivity of the amorphized region 140 with respect to a predetermined energy beam (here, excimer laser light). Therefore, as shown in FIG. 4C, the absorptance of the amorphized region 140 is low near the center of the amorphized region 140 and high near the end, along the crystallization direction. It changes slowly and continuously.

  As shown in FIG. 3E, the amorphized region 140 is irradiated with a predetermined energy beam (here, excimer laser light) 150. By irradiation with the excimer laser beam 150, the temperature of the amorphized region 140 rises and the amorphized region 140 enters a molten state. The higher the absorptance of the amorphized region 140, the higher the temperature of the amorphized region 140. As shown in FIG. 4D, the temperature of the amorphized region 140 increases in the crystallization direction. And gradually changes continuously so as to be low near the center of the amorphized region 140 and high near the end.

  When the irradiation of the excimer laser beam 150 is stopped and the temperature of the amorphized region 140 is lowered to the melting point, the amorphized region 140 is crystallized. Thereby, the amorphous region 140 becomes a crystallized region. By irradiation with the excimer laser beam 150, the temperature of the amorphized region 140 is gradually continued to be low near the center and high near the end along the crystallization direction as shown in FIG. 4 (d). Therefore, the vicinity of the central portion of the amorphized region 140 is crystallized first, which becomes a seed crystal, and the crystal grows along the crystallization direction. By performing crystal growth in this way, a crystalline semiconductor film having crystal grains with a large crystal grain size is manufactured.

  As described above, since crystal grains having a large crystal grain size are formed in the crystalline semiconductor film of the present embodiment, the electrical characteristics of the crystalline silicon film are improved and variations thereof are suppressed.

  In addition, according to the present embodiment, since the seed crystal can be generated in the portion where the concentration of the implanted silicon 130 is low, the position of the crystal grain can be easily controlled.

(Embodiment 3)
A third embodiment of the method for manufacturing a crystalline semiconductor film according to the present invention will be described below with reference to FIGS.

As shown in FIG. 5A, an SiO ₂ film 112 is formed on the glass substrate 110. The thickness of the SiO ₂ film 112 is 200nm for example, SiO ₂ film 112 is formed by a plasma CVD method using TEOS (tetraethoxysilane) gas and the O ₃ gas.

As shown in FIG. 5B, an amorphous silicon film 118 is formed on the entire surface of the SiO ₂ film 112. The thickness of the amorphous silicon film 118 is, for example, 50 nm, and the amorphous silicon film 118 is formed by a low pressure CVD method using SiH ₄ gas.

  As shown in FIG. 5C, the amorphous silicon film 118 is heat-treated at 600 ° C. for 20 hours, for example. As a result, the amorphous silicon film 118 is crystallized and a polycrystalline silicon film 120 is formed.

As shown in FIG. 5D, an SiO ₂ film 122 is formed on the polycrystalline silicon film 120 as a protective film. The protective film 122 is thin and has a thickness of 20 nm, for example. By forming the protective film 122 in this way, damage that occurs in the polycrystalline silicon film 120 during subsequent ion implantation can be reduced.

  As shown in FIG. 5E, argon 130 is implanted as a predetermined element by ion implantation or ion doping. Argon 130 is implanted into the polycrystalline silicon film 120 through the protective film 122. Similarly to FIG. 1B, the length of the arrow shown in FIG. 5E also corresponds to the dose of the argon 130 implanted into the polycrystalline silicon film 120. The longer the arrow, the more the argon 130 It shows that the dose is large. The dose amount of argon 130 implanted into the polycrystalline silicon film 120 continuously changes so as to decrease in the vicinity of the central portion of the polycrystalline silicon film 120 and increase in the vicinity of the end portion along the crystallization direction.

Here again, as described with reference to FIG. 1C, the relative speed of the implantation region 160 with respect to the polycrystalline silicon film 120 is changed in accordance with the dose of the argon 130 to be implanted, and the argon ions are changed. Implanted into the polycrystalline silicon film 120. The dose of argon 130 is in the range of 1 × 10 ¹² atoms / cm ^{2 to} 9 × 10 ¹⁷ atoms / cm ² . The concentration of argon 130 in the amorphized region 140 is measured by, for example, SIMS (secondary ion mass spectrometry). The concentration of the amorphizing element 130 is preferably 1 × 10 ¹⁵ atoms / cm ³ or more and 1 × 10 ²⁰ atoms / cm ³ or less.

  By injecting the argon 130, the crystallization rate of the polycrystalline silicon film 120 is reduced, and an amorphous region 140 is formed as shown in FIG. As shown in FIG. 6A, the concentration of argon 130 in the amorphized region 140 is low near the center of the amorphized region 140 along the crystallization direction and high near the end. , Continuously changing.

  The higher the concentration of argon 130 in the amorphous region 140, the lower the crystallization rate of the amorphous region 140. Therefore, the crystallization rate of the amorphous region 140 is shown in FIG. As described above, it gradually and continuously changes so as to be higher in the vicinity of the central portion of the amorphous region 140 and lower in the vicinity of the end portion along the crystallization direction.

  The lower the crystallization rate of the amorphized region 140, the higher the absorptivity of the amorphized region 140 with respect to a predetermined energy beam (here, excimer laser light). Therefore, as shown in FIG. 6C, the absorptivity of the amorphized region 140 is low near the center of the amorphized region 140 along the crystallization direction and high near the end. It changes slowly and continuously.

  As shown in FIG. 5G, the amorphous region 140 is irradiated with a predetermined energy beam (in this case, excimer laser light) 150. By irradiation with the excimer laser beam 150, the temperature of the amorphized region 140 rises and the amorphized region 140 enters a molten state. Since the temperature of the amorphized region 140 increases as the absorptivity of the amorphized region 140 increases, the temperature of the amorphized region 140 increases in the crystallization direction as shown in FIG. And gradually changes continuously so as to be low near the center of the amorphized region 140 and high near the end.

  When the irradiation of the excimer laser beam 150 is stopped and the temperature of the amorphized region 140 is lowered to the melting point, the amorphized region 140 is crystallized. Thereby, the amorphous region 140 becomes a crystallized region. As shown in FIG. 6 (d), the temperature of the amorphized region 140 changes slowly and continuously so as to be low near the center and high near the end along the crystallization direction. The vicinity of the central portion of the crystallized region 140 is crystallized first, which becomes a seed crystal, and the crystal grows along the crystallization direction. By performing crystal growth in this way, a crystalline semiconductor film having crystal grains with a large crystal grain size is formed.

  As described above, since crystal grains having a large crystal grain size are formed in the crystalline semiconductor film of the present embodiment, the electrical characteristics of the crystalline silicon film are improved and variations thereof are suppressed.

  In addition, according to the present embodiment, since the seed crystal can be generated in the portion with the lowest concentration of the implanted argon 130, the position of the crystal grain can be easily controlled.

(Embodiment 4)
Hereinafter, an embodiment of a semiconductor device using a crystalline semiconductor film according to the present invention will be described with reference to FIG. The semiconductor device of this embodiment has a plurality of TFTs formed using the crystalline semiconductor film of any of Embodiments 1 to 3. FIG. 7 shows one TFT 180 as an example. Yes. The semiconductor device is manufactured as follows.

First, the crystalline silicon film 170 according to any one of the first to third embodiments is prepared. Here, the crystalline silicon film 170 is formed on the substrate 110 and the SiO ₂ film 112, and is patterned into a predetermined shape using an RIE (Reactive Ion Etching) method using CF ₄ gas and O ₂ gas. Has been.

A SiO ₂ film is deposited on the crystalline silicon film 170 and the SiO ₂ film 112 by a plasma CVD method using TEOS gas and O ₃ gas. This SiO ₂ film was later used to provide a gate SiO ₂ film 171 provided on a predetermined region of the crystalline silicon film 170, both ends of the crystalline silicon film 170, and the SiO ₂ film 112. A SiO ₂ film 172 is formed.

By depositing WSi ₂ / polycrystalline Si by sputtering and patterning it by RIE using CF ₄ gas and O ₂ gas, WSi ₂ / polycrystalline is formed on the portion to be the gate SiO ₂ film 171. A Si gate electrode 173 is formed.

After depositing the SiO ₂ film by the plasma CVD method using TEOS gas and O ₃ gas, the deposited SiO ₂ film is etched by the RIE method using CF ₄ gas and CHF ₃ gas, thereby producing crystalline silicon. An SiO ₂ film 174 covering the gate SiO ₂ film 171 and the WSi ₂ / polycrystalline Si gate electrode 173 on the film 170 and an SiO ₂ film 175 provided on the SiO ₂ film 172 are formed. By this etching, the previously deposited SiO ₂ film is also removed, and the gate SiO ₂ film 171 and the SiO ₂ film 172 are formed separately, and a contact hole exposing a part of the crystalline silicon film 170 is formed. The

  P (phosphorus) or B (boron) is implanted into the crystalline silicon film 170 exposed through the contact hole by ion doping so as to function as a source and a drain in the TFT 180 according to the type of the TFT 180. .

An Al wiring 176 is formed on the crystalline silicon film 170 and the SiO ₂ film 175. The Al wiring 176 is formed by filling Al into the contact hole by sputtering and depositing it on the SiO ₂ film 175, and patterning the deposited Al by RIE using BCl ₃ gas and Cl ₂ gas. Is done.

Next, by depositing a SiN film by a plasma CVD method using SiH ₄ gas, NH ₃ gas and N ₂ gas, and etching the SiN film deposited by an RIE method using CF ₄ gas and CHF ₃ gas, A SiN protective film 177 is formed on the Al wiring 176 and the WSi ₂ / polycrystalline Si gate electrode 173. In this manner, a semiconductor device having the TFT 180 can be manufactured.

  In this embodiment, the crystalline silicon film 170 according to any one of Embodiments 1 to 3 described above is used for the active layer of the TFT 180. Since the crystalline mobility of the crystalline silicon film 170 is high, a TFT 180 that can respond at high speed and has a low threshold voltage is formed. Further, according to the present embodiment, variation in electrical characteristics (for example, threshold voltage) between the TFTs 180 can be suppressed. Such a TFT 180 is used, for example, in a semiconductor device such as a driver (drive circuit) of a liquid crystal display device, a semiconductor memory, or a semiconductor logic circuit.

  Although a semiconductor device having a TFT using a crystalline semiconductor film has been described here, the present embodiment is not limited to this. A semiconductor device having a semiconductor element other than a TFT can be manufactured using the crystalline silicon film of any of Embodiments 1 to 3 described above.

(Embodiment 5)
Hereinafter, an embodiment of a display device using a semiconductor device according to the present invention will be described with reference to FIG. Here, the liquid crystal display device 300 will be described as an example of the display device. The liquid crystal display device 300 is disposed between the active matrix substrate 190 manufactured using the semiconductor device according to the fourth embodiment described with reference to FIG. 7, the counter substrate 200, and the active matrix substrate 190 and the counter substrate 200. The liquid crystal layer 210 is provided.

  First, the active matrix substrate 190 will be described. A resin film 191 is formed on the SiN protective film 177 of the semiconductor device of the fourth embodiment. The resin film 191 is formed by depositing a resin film on the SiN protective film 177 and forming a through hole so as to penetrate the deposited resin film and the SiN protective film 177. Further, by forming the through hole, the Al wiring 176 is exposed through the through hole.

Next, the pixel electrode 192 is formed on the resin film 191. The pixel electrode 192 is formed by filling the through hole with an ITO film by sputtering and depositing it on the resin film 191 and patterning the deposited ITO film using HCl and FeCl ₃ .

  Next, an alignment film 193 is formed on the pixel electrode 192. The alignment film 193 is formed by performing a rubbing process on a polyimide film formed by an offset printing method. In this way, the active matrix substrate 190 is formed.

  Next, the counter substrate 200 will be described. A color filter 202 is formed on another glass substrate 201. The color filter 202 is formed by transferring a film with photosensitive resin thin films of red, green, and blue by thermocompression bonding and patterning by photolithography. Next, a black matrix portion is similarly formed in the space between the respective photosensitive resin thin films of red, green, and blue.

  Next, an ITO film 203 is formed on the color filter 202 by a sputtering method. Next, the alignment film 204 is formed by performing a rubbing process on the polyimide film formed by the offset printing method. In this way, the counter substrate 200 is formed.

  Thereafter, the active matrix substrate 190 and the counter substrate 200 are bonded together with a seal resin. At this time, in order to make the space between the active matrix substrate 190 and the counter substrate 200 constant, spherical silica is dispersed. Next, liquid crystal is injected between the active matrix substrate 190 and the counter substrate 200 to form the liquid crystal layer 210. Next, if necessary, a polarizing plate is attached to the glass substrate 110 of the active matrix substrate 190 and the glass substrate 201 of the counter substrate 200, and a drive circuit or the like is mounted on the active matrix substrate 190. In this way, the liquid crystal display device 300 can be manufactured.

  The crystalline semiconductor film of the present invention has high carrier mobility, and variation in electrical characteristics is suppressed. Therefore, by using such a crystalline semiconductor film for an active layer of a semiconductor element such as a thin film transistor, a semiconductor element capable of high-speed response can be created. In addition, in a semiconductor device having a plurality of semiconductor elements, variation in electrical characteristics of each semiconductor element can be suppressed. Such a semiconductor device is suitably used for an active matrix substrate of a liquid crystal display device, a driver (driving circuit) of the liquid crystal display device, a semiconductor memory, a semiconductor logic circuit, and the like.

(A), (b) and (d)-(f) are typical sectional views for explaining a first embodiment of a method for producing a crystalline semiconductor film according to the present invention, respectively (c) ) Is a perspective view for explaining the first embodiment. FIG. (A)-(d) is a graph for demonstrating the manufacturing method of the crystalline-semiconductor film of 1st Embodiment, respectively, (a) is an amorphization area | region along a crystallization direction. It is a graph which shows the relationship between a position and the density | concentration of an amorphization element, (b) shows the relationship between the position of the amorphization area | region along the crystallization direction, and the crystallization rate of an amorphization area | region. (C) is a graph showing the relationship between the position of the amorphized region along the crystallization direction and the absorptivity of the amorphized region with respect to a predetermined energy beam, and (d) 4 is a graph showing the relationship between the position of an amorphized region along the crystallization direction and the temperature of the amorphized region when irradiated with a predetermined energy beam. (A)-(e) is typical sectional drawing for demonstrating 2nd Embodiment of the manufacturing method of the crystalline semiconductor film by this invention, respectively. (A)-(d) is a graph for demonstrating the manufacturing method of the crystalline-semiconductor film of 2nd Embodiment, respectively, (a) is an amorphization area | region along the crystallization direction. It is a graph which shows the relationship between a position and the density | concentration of an amorphization element, (b) shows the relationship between the position of the amorphization area | region along the crystallization direction, and the crystallization rate of an amorphization area | region. (C) is a graph showing the relationship between the position of the amorphized region along the crystallization direction and the absorptivity of the amorphized region with respect to a predetermined energy beam, and (d) 4 is a graph showing the relationship between the position of an amorphized region along the crystallization direction and the temperature of the amorphized region when irradiated with a predetermined energy beam. (A)-(g) is typical sectional drawing for demonstrating 3rd Embodiment of the manufacturing method of the crystalline semiconductor film by this invention, respectively. (A)-(d) is a graph for demonstrating the manufacturing method of the crystalline-semiconductor film of 3rd Embodiment, respectively, (a) is an amorphization area | region along the crystallization direction. It is a graph which shows the relationship between a position and the density | concentration of an amorphization element, (b) shows the relationship between the position of the amorphization area | region along the crystallization direction, and the crystallization rate of an amorphization area | region. (C) is a graph showing the relationship between the position of the amorphized region along the crystallization direction and the absorptivity of the amorphized region with respect to a predetermined energy beam, and (d) 4 is a graph showing the relationship between the position of an amorphized region along the crystallization direction and the temperature of the amorphized region when irradiated with a predetermined energy beam. It is typical sectional drawing which shows the semiconductor device by Embodiment 4 of this invention. It is typical sectional drawing which shows the display apparatus by Embodiment 5 of this invention.

Explanation of symbols

110 substrate, glass substrate 112 SiO ₂ film 118 amorphous silicon film 120 polycrystalline semiconductor film, polycrystalline silicon film 130 amorphizing element, silicon, argon 140 amorphized region 150 energy beam, excimer laser light 170 crystal Silicon film 171 Gate SiO ₂ film 172 SiO ₂ film 173 Gate electrode 174 SiO ₂ film 175 SiO ₂ film 176 Al wiring 177 SiN protective film 180 TFT
190 active matrix substrate 191 resin film 192 pixel electrode 193 alignment film 200 counter substrate 201 glass substrate 202 color filter 203 ITO film 204 alignment film 210 liquid crystal layer 300 liquid crystal display device

Claims (22)

Preparing a polycrystalline semiconductor film;
By implanting a predetermined element into at least a part of the polycrystalline semiconductor film, an amorphous region having a crystallization rate lower than the crystallization rate of the polycrystalline semiconductor film is formed in the polycrystalline semiconductor film. Forming in the at least a part of the region, and implanting the predetermined element so that the absorptivity of the amorphized region with respect to a predetermined energy beam continuously changes along a predetermined direction; Process,
A method of crystallizing the amorphous region by irradiating the amorphous region with the predetermined energy beam.   The step of forming the amorphized region includes the step of implanting the predetermined element so that the concentration of the predetermined element in the amorphized region continuously changes along the predetermined direction. The manufacturing method of the crystalline-semiconductor film of Claim 1 containing.   The step of injecting the predetermined element includes the step of injecting the amorphous element into a region where the concentration of the predetermined element in the amorphous region is near the end of the amorphous region along the predetermined direction. The method for producing a crystalline semiconductor film according to claim 2, further comprising a step of implanting the predetermined element so as to be low in the vicinity of the central portion of the crystal.   4. The manufacturing of a crystalline semiconductor film according to claim 1, wherein the step of forming the amorphized region includes a step of implanting the predetermined element by an ion implantation method or an ion doping method. 5. Method.   In the step of forming the amorphized region, the predetermined element is implanted a plurality of times by changing acceleration energy so that the concentration of the predetermined element is substantially constant over the entire thickness direction of the polycrystalline semiconductor film. The manufacturing method of the crystalline semiconductor film of any one of Claim 1 to 4 including the process to carry out.   The method for producing a crystalline semiconductor film according to claim 1, wherein the step of forming the amorphized region includes a step of implanting the predetermined element with an energy of 1 KeV or more and 200 KeV or less. . The step of forming the amorphized region includes a step of implanting the predetermined element in a dose range of 1 × 10 ¹² atoms / cm ² or more and 9 × 10 ¹⁷ atoms / cm ² or less. 6. The method for producing a crystalline semiconductor film according to any one of 6 above.   In the step of forming the amorphized region, the predetermined element includes at least one of an element of a material constituting the polycrystalline semiconductor film and an element belonging to a rare gas. A method for producing a crystalline semiconductor film according to any one of the above.   The method for manufacturing a crystalline semiconductor film according to claim 1, wherein the step of crystallizing the amorphized region includes a step of crystallizing using light as the predetermined energy beam. .   The step of forming the amorphized region includes a step of controlling an absorptance of the amorphized region with respect to the predetermined energy beam by changing a crystallization rate of the amorphized region. The method for manufacturing a crystalline semiconductor film according to claim 1.   The method for manufacturing a crystalline semiconductor film according to claim 1, wherein in the step of preparing the polycrystalline semiconductor film, the polycrystalline semiconductor film contains silicon.   The method for manufacturing a crystalline semiconductor film according to claim 1, wherein in the step of preparing the polycrystalline semiconductor film, the thickness of the polycrystalline semiconductor film is in a range of 10 nm to 200 nm.   The crystalline semiconductor according to any one of claims 1 to 12, wherein the step of crystallizing the amorphized region includes a step of using a laser beam having a wavelength of 200 nm to 400 nm as the predetermined energy beam. A method for producing a membrane. The process of crystallizing the amorphous region, the energy density comprises using a 250 mJ / cm ² or more 500 mJ / cm ² or less of the pulsed laser beam as the predetermined energy beam, to any one of claims 1 to 13, The manufacturing method of the crystalline semiconductor film as described in one.   The method for producing a crystalline semiconductor film according to claim 1, wherein the step of crystallizing the amorphized region includes a step of growing a crystal in a lateral direction.   The step of crystallizing the amorphized region includes the step of crystallizing the amorphized region from a low concentration portion to a high concentration portion of the predetermined element in the amorphous region. The method for manufacturing a crystalline semiconductor film according to claim 1.   The method for producing a crystalline semiconductor film according to claim 1, wherein the step of crystallizing the amorphized region includes a step of scanning the predetermined energy beam in the predetermined direction. .   The step of crystallizing the amorphized region includes a step of irradiating the amorphized region with an energy beam having a substantially constant energy density along the predetermined direction. The manufacturing method of the crystalline semiconductor film as described in one.   The method for producing a crystalline semiconductor film according to claim 1, wherein the step of preparing the polycrystalline semiconductor film includes a step of forming the polycrystalline semiconductor film on a substrate.   A crystalline semiconductor film manufactured by the manufacturing method according to claim 1.   A semiconductor device comprising the crystalline semiconductor film according to claim 20.   A display device comprising the semiconductor device according to claim 21.

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