JPS6027692A - インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置 - Google Patents

インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置

Info

Publication number
JPS6027692A
JPS6027692A JP13447983A JP13447983A JPS6027692A JP S6027692 A JPS6027692 A JP S6027692A JP 13447983 A JP13447983 A JP 13447983A JP 13447983 A JP13447983 A JP 13447983A JP S6027692 A JPS6027692 A JP S6027692A
Authority
JP
Japan
Prior art keywords
substrate
process monitoring
epitaxial growth
pipe
chemical reaction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13447983A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6343357B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Toshio Hayashi
俊雄 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulvac Inc
Original Assignee
Ulvac Inc
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulvac Inc, Nihon Shinku Gijutsu KK filed Critical Ulvac Inc
Priority to JP13447983A priority Critical patent/JPS6027692A/ja
Publication of JPS6027692A publication Critical patent/JPS6027692A/ja
Publication of JPS6343357B2 publication Critical patent/JPS6343357B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02Epitaxial-layer growth
    • C30B25/16Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP13447983A 1983-07-25 1983-07-25 インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置 Granted JPS6027692A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13447983A JPS6027692A (ja) 1983-07-25 1983-07-25 インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13447983A JPS6027692A (ja) 1983-07-25 1983-07-25 インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置

Publications (2)

Publication Number Publication Date
JPS6027692A true JPS6027692A (ja) 1985-02-12
JPS6343357B2 JPS6343357B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-08-30

Family

ID=15129285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13447983A Granted JPS6027692A (ja) 1983-07-25 1983-07-25 インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置

Country Status (1)

Country Link
JP (1) JPS6027692A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9685587B2 (en) 2014-05-27 2017-06-20 The Silanna Group Pty Ltd Electronic devices comprising n-type and p-type superlattices
US9691938B2 (en) 2014-05-27 2017-06-27 The Silanna Group Pty Ltd Advanced electronic device structures using semiconductor structures and superlattices
US10475956B2 (en) 2014-05-27 2019-11-12 Silanna UV Technologies Pte Ltd Optoelectronic device
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931272A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-03-02 1974-03-20
JPS50108359U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-02-12 1975-09-04

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931272A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1972-03-02 1974-03-20
JPS50108359U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-02-12 1975-09-04

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9685587B2 (en) 2014-05-27 2017-06-20 The Silanna Group Pty Ltd Electronic devices comprising n-type and p-type superlattices
US9691938B2 (en) 2014-05-27 2017-06-27 The Silanna Group Pty Ltd Advanced electronic device structures using semiconductor structures and superlattices
US10128404B2 (en) 2014-05-27 2018-11-13 Silanna UV Technologies Pte Ltd Electronic devices comprising N-type and P-type superlattices
US10153395B2 (en) 2014-05-27 2018-12-11 Silanna UV Technologies Pte Ltd Advanced electronic device structures using semiconductor structures and superlattices
US10475954B2 (en) 2014-05-27 2019-11-12 Silanna UV Technologies Pte Ltd Electronic devices comprising n-type and p-type superlattices
US10475956B2 (en) 2014-05-27 2019-11-12 Silanna UV Technologies Pte Ltd Optoelectronic device
US10483432B2 (en) 2014-05-27 2019-11-19 Silanna UV Technologies Pte Ltd Advanced electronic device structures using semiconductor structures and superlattices
US11114585B2 (en) 2014-05-27 2021-09-07 Silanna UV Technologies Pte Ltd Advanced electronic device structures using semiconductor structures and superlattices
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
US11563144B2 (en) 2014-05-27 2023-01-24 Silanna UV Technologies Pte Ltd Advanced electronic device structures using semiconductor structures and superlattices
US11862750B2 (en) 2014-05-27 2024-01-02 Silanna UV Technologies Pte Ltd Optoelectronic device
US12272764B2 (en) 2014-05-27 2025-04-08 Silanna UV Technologies Pte Ltd Advanced electronic device structures using semiconductor structures and superlattices

Also Published As

Publication number Publication date
JPS6343357B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-08-30

Similar Documents

Publication Publication Date Title
US7235130B2 (en) Apparatus and method for diamond production
JP2022160395A (ja) インラインチャンバメテロロジ-
EP3051002A1 (en) Apparatus and method for forming film
JPS6027692A (ja) インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置
GB934673A (en) Improvements in or relating to the production of semi-conductor materials
JPS5936927A (ja) 半導体気相成長装置
NO912715D0 (no) Fremgangsmaate for fremstilling av silisiumkarbid.
JPH02291114A (ja) 化合物半導体膜の気相成長装置
JPS60189927A (ja) 気相反応容器
JPH02180796A (ja) 炭化珪素単結晶の製造方法
JPH01201926A (ja) 気相エピタキシャル成長方法
JPS5974636A (ja) 膜厚測定装置
JPS59150417A (ja) 気相成長方法およびその装置
JP3101132B2 (ja) 熱処理装置
JPH0397870A (ja) 基板に対する超伝導薄膜の気相成長装置
JPS60253212A (ja) 気相成長装置
JPS61289623A (ja) 気相反応装置
JPS6050168A (ja) 光cvdによる固体薄膜の製造方法
JPH08166342A (ja) 顕微ラマン分光測定装置
JPS6215816A (ja) 赤外線加熱装置
SU1074161A1 (ru) Устройство дл газовой эпитаксии полупроводниковых соединений
JP2004196642A (ja) シリコンの製造装置および方法
CN119506838A (zh) 一种鼓型多温区气相沉积生长及原位表征腔体装置
JPH0570291A (ja) ダイヤモンド合成法およびその合成装置
JPH0653144A (ja) 縦型炉