JPS6027692A - インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置 - Google Patents
インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置Info
- Publication number
- JPS6027692A JPS6027692A JP13447983A JP13447983A JPS6027692A JP S6027692 A JPS6027692 A JP S6027692A JP 13447983 A JP13447983 A JP 13447983A JP 13447983 A JP13447983 A JP 13447983A JP S6027692 A JPS6027692 A JP S6027692A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- process monitoring
- epitaxial growth
- pipe
- chemical reaction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 26
- 238000010978 in-process monitoring Methods 0.000 title claims abstract description 11
- 239000012808 vapor phase Substances 0.000 title claims description 9
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 239000010453 quartz Substances 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13447983A JPS6027692A (ja) | 1983-07-25 | 1983-07-25 | インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13447983A JPS6027692A (ja) | 1983-07-25 | 1983-07-25 | インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6027692A true JPS6027692A (ja) | 1985-02-12 |
JPS6343357B2 JPS6343357B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-08-30 |
Family
ID=15129285
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13447983A Granted JPS6027692A (ja) | 1983-07-25 | 1983-07-25 | インプロセスモニタ可能な気相エピタキシヤル成長用化学反応装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6027692A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9685587B2 (en) | 2014-05-27 | 2017-06-20 | The Silanna Group Pty Ltd | Electronic devices comprising n-type and p-type superlattices |
US9691938B2 (en) | 2014-05-27 | 2017-06-27 | The Silanna Group Pty Ltd | Advanced electronic device structures using semiconductor structures and superlattices |
US10475956B2 (en) | 2014-05-27 | 2019-11-12 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4931272A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-03-02 | 1974-03-20 | ||
JPS50108359U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-02-12 | 1975-09-04 |
-
1983
- 1983-07-25 JP JP13447983A patent/JPS6027692A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4931272A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1972-03-02 | 1974-03-20 | ||
JPS50108359U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1974-02-12 | 1975-09-04 |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9685587B2 (en) | 2014-05-27 | 2017-06-20 | The Silanna Group Pty Ltd | Electronic devices comprising n-type and p-type superlattices |
US9691938B2 (en) | 2014-05-27 | 2017-06-27 | The Silanna Group Pty Ltd | Advanced electronic device structures using semiconductor structures and superlattices |
US10128404B2 (en) | 2014-05-27 | 2018-11-13 | Silanna UV Technologies Pte Ltd | Electronic devices comprising N-type and P-type superlattices |
US10153395B2 (en) | 2014-05-27 | 2018-12-11 | Silanna UV Technologies Pte Ltd | Advanced electronic device structures using semiconductor structures and superlattices |
US10475954B2 (en) | 2014-05-27 | 2019-11-12 | Silanna UV Technologies Pte Ltd | Electronic devices comprising n-type and p-type superlattices |
US10475956B2 (en) | 2014-05-27 | 2019-11-12 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
US10483432B2 (en) | 2014-05-27 | 2019-11-19 | Silanna UV Technologies Pte Ltd | Advanced electronic device structures using semiconductor structures and superlattices |
US11114585B2 (en) | 2014-05-27 | 2021-09-07 | Silanna UV Technologies Pte Ltd | Advanced electronic device structures using semiconductor structures and superlattices |
US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
US11563144B2 (en) | 2014-05-27 | 2023-01-24 | Silanna UV Technologies Pte Ltd | Advanced electronic device structures using semiconductor structures and superlattices |
US11862750B2 (en) | 2014-05-27 | 2024-01-02 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
US12272764B2 (en) | 2014-05-27 | 2025-04-08 | Silanna UV Technologies Pte Ltd | Advanced electronic device structures using semiconductor structures and superlattices |
Also Published As
Publication number | Publication date |
---|---|
JPS6343357B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-08-30 |
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