JPS60264395A - 有機金属気相エピタキシヤル成長方法 - Google Patents

有機金属気相エピタキシヤル成長方法

Info

Publication number
JPS60264395A
JPS60264395A JP59118430A JP11843084A JPS60264395A JP S60264395 A JPS60264395 A JP S60264395A JP 59118430 A JP59118430 A JP 59118430A JP 11843084 A JP11843084 A JP 11843084A JP S60264395 A JPS60264395 A JP S60264395A
Authority
JP
Japan
Prior art keywords
vapor phase
metal
epitaxial growth
phase epitaxial
flow rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59118430A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0551559B2 (OSRAM
Inventor
Akio Yoshikawa
昭男 吉川
Takashi Sugino
隆 杉野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP59118430A priority Critical patent/JPS60264395A/ja
Publication of JPS60264395A publication Critical patent/JPS60264395A/ja
Publication of JPH0551559B2 publication Critical patent/JPH0551559B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59118430A 1984-06-08 1984-06-08 有機金属気相エピタキシヤル成長方法 Granted JPS60264395A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59118430A JPS60264395A (ja) 1984-06-08 1984-06-08 有機金属気相エピタキシヤル成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59118430A JPS60264395A (ja) 1984-06-08 1984-06-08 有機金属気相エピタキシヤル成長方法

Publications (2)

Publication Number Publication Date
JPS60264395A true JPS60264395A (ja) 1985-12-27
JPH0551559B2 JPH0551559B2 (OSRAM) 1993-08-02

Family

ID=14736448

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59118430A Granted JPS60264395A (ja) 1984-06-08 1984-06-08 有機金属気相エピタキシヤル成長方法

Country Status (1)

Country Link
JP (1) JPS60264395A (OSRAM)

Also Published As

Publication number Publication date
JPH0551559B2 (OSRAM) 1993-08-02

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term