JPS60254593A - エレクトロルミネツセンス素子 - Google Patents

エレクトロルミネツセンス素子

Info

Publication number
JPS60254593A
JPS60254593A JP59111999A JP11199984A JPS60254593A JP S60254593 A JPS60254593 A JP S60254593A JP 59111999 A JP59111999 A JP 59111999A JP 11199984 A JP11199984 A JP 11199984A JP S60254593 A JPS60254593 A JP S60254593A
Authority
JP
Japan
Prior art keywords
layer
selenium
light
emitting layer
tellurium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59111999A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6315716B2 (enrdf_load_stackoverflow
Inventor
清 高橋
北林　基
林　琢夫
小沢　宣彦
平沢　幸弘
直俊 宮沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shingijutsu Kaihatsu Jigyodan
Original Assignee
Shingijutsu Kaihatsu Jigyodan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shingijutsu Kaihatsu Jigyodan filed Critical Shingijutsu Kaihatsu Jigyodan
Priority to JP59111999A priority Critical patent/JPS60254593A/ja
Publication of JPS60254593A publication Critical patent/JPS60254593A/ja
Publication of JPS6315716B2 publication Critical patent/JPS6315716B2/ja
Granted legal-status Critical Current

Links

JP59111999A 1984-05-31 1984-05-31 エレクトロルミネツセンス素子 Granted JPS60254593A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59111999A JPS60254593A (ja) 1984-05-31 1984-05-31 エレクトロルミネツセンス素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59111999A JPS60254593A (ja) 1984-05-31 1984-05-31 エレクトロルミネツセンス素子

Publications (2)

Publication Number Publication Date
JPS60254593A true JPS60254593A (ja) 1985-12-16
JPS6315716B2 JPS6315716B2 (enrdf_load_stackoverflow) 1988-04-06

Family

ID=14575409

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59111999A Granted JPS60254593A (ja) 1984-05-31 1984-05-31 エレクトロルミネツセンス素子

Country Status (1)

Country Link
JP (1) JPS60254593A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6315716B2 (enrdf_load_stackoverflow) 1988-04-06

Similar Documents

Publication Publication Date Title
Black Mass transport of aluminum by momentum exchange with conducting electrons
WO2015196412A1 (zh) 一种金属掺杂的Ge-Sb-Te基多值存储相变材料及相变存储器
JP2000128698A (ja) Ｉｔｏ材、ｉｔｏ膜及びその形成方法、並びにｅｌ素子
JPH07262829A (ja) 透明導電膜及びその形成方法
US5107174A (en) Thin-film electroluminescent device
JPS60124397A (ja) エレクトロルミネツセンス素子
JP2003059834A (ja) 結晶性薄膜及びその製造方法、該結晶性薄膜を用いた素子、該素子を用いて構成された回路、並びに該素子もしくは該回路を含む装置
JPS60254593A (ja) エレクトロルミネツセンス素子
US2983631A (en) Method for making diodes and products resulting therefrom
Du et al. Large magnetoresistance of bismuth/gold films thermally deposited onto glass substrates
JPH04132233A (ja) ＣｕＩｎＳｅ↓２系化合物薄膜の形成方法
JPH0762526A (ja) 有機電界発光素子の製造方法
JPS63190164A (ja) 真空蒸着法
Marinković et al. Influence of deposition conditions and substrate structure on the structure of sputtered tellurium films
CN116348284B (zh) 层叠体
JPH0714805A (ja) 電極の形成方法及びその形成装置
JP2004263241A (ja) フラーレンデバイスの製造方法、およびフラーレンデバイス
US20050241931A1 (en) Methods of manufacturing polycrystalline silicon thin film
JPH0452566B2 (enrdf_load_stackoverflow)
JPH06275130A (ja) 透明導電膜
JPS5921023B2 (ja) 光導電素子
Cain Plastic substrates for thin film electronic devices
JPS6341231B2 (enrdf_load_stackoverflow)
CN117524855A (zh) 一种负载有三方晶系硒薄膜的衬底制备方法及其应用
CN118223130A (zh) 金属硫族化合物单晶薄膜及其制备方法