JPS60254034A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS60254034A
JPS60254034A JP59108508A JP10850884A JPS60254034A JP S60254034 A JPS60254034 A JP S60254034A JP 59108508 A JP59108508 A JP 59108508A JP 10850884 A JP10850884 A JP 10850884A JP S60254034 A JPS60254034 A JP S60254034A
Authority
JP
Japan
Prior art keywords
layer
intermediate layer
polydialkoxysiloxane
organopolysilsesquioxane
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59108508A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0444741B2 (enrdf_load_stackoverflow
Inventor
Kota Nishii
耕太 西井
Yasuhiro Yoneda
泰博 米田
Masashi Miyagawa
昌士 宮川
Shunichi Fukuyama
俊一 福山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59108508A priority Critical patent/JPS60254034A/ja
Publication of JPS60254034A publication Critical patent/JPS60254034A/ja
Publication of JPH0444741B2 publication Critical patent/JPH0444741B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP59108508A 1984-05-30 1984-05-30 パタ−ン形成方法 Granted JPS60254034A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59108508A JPS60254034A (ja) 1984-05-30 1984-05-30 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59108508A JPS60254034A (ja) 1984-05-30 1984-05-30 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS60254034A true JPS60254034A (ja) 1985-12-14
JPH0444741B2 JPH0444741B2 (enrdf_load_stackoverflow) 1992-07-22

Family

ID=14486554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59108508A Granted JPS60254034A (ja) 1984-05-30 1984-05-30 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS60254034A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262151A (ja) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料及びその利用方法
JPS60262150A (ja) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法
JPS6377050A (ja) * 1986-09-20 1988-04-07 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料およびパタ−ン形成方法
US5290899A (en) * 1988-09-22 1994-03-01 Tosoh Corporation Photosensitive material having a silicon-containing polymer
FR2792323A1 (fr) * 1999-04-19 2000-10-20 Centre Nat Etd Spatiales Composition de revetement transparent non mouillable et articles revetus obtenus
US6743885B2 (en) 2001-07-31 2004-06-01 Sumitomo Chemical Company, Limited Resin composition for intermediate layer of three-layer resist
WO2004092437A3 (en) * 2003-04-10 2005-06-02 Microphase Coatings Inc Thermal barrier composition
US6914114B2 (en) 2000-07-17 2005-07-05 Honeywell International Inc. Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
US7060635B2 (en) 2002-06-28 2006-06-13 Fujitsu Limited Method of manufacturing semiconductor device and method of forming pattern
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US8992806B2 (en) 2003-11-18 2015-03-31 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262150A (ja) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料及びそれを用いた三層レジストパタン形成方法
JPS60262151A (ja) * 1984-06-11 1985-12-25 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料及びその利用方法
JPS6377050A (ja) * 1986-09-20 1988-04-07 Nippon Telegr & Teleph Corp <Ntt> 三層レジスト用中間層材料およびパタ−ン形成方法
US5290899A (en) * 1988-09-22 1994-03-01 Tosoh Corporation Photosensitive material having a silicon-containing polymer
FR2792323A1 (fr) * 1999-04-19 2000-10-20 Centre Nat Etd Spatiales Composition de revetement transparent non mouillable et articles revetus obtenus
EP1046689A1 (fr) * 1999-04-19 2000-10-25 Centre National D'etudes Spatiales Composition de revêtement transparent non-mouilable et articles revêtus obtenus
US6914114B2 (en) 2000-07-17 2005-07-05 Honeywell International Inc. Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
US6743885B2 (en) 2001-07-31 2004-06-01 Sumitomo Chemical Company, Limited Resin composition for intermediate layer of three-layer resist
US7060635B2 (en) 2002-06-28 2006-06-13 Fujitsu Limited Method of manufacturing semiconductor device and method of forming pattern
WO2004092437A3 (en) * 2003-04-10 2005-06-02 Microphase Coatings Inc Thermal barrier composition
US7687150B2 (en) * 2003-04-10 2010-03-30 Microphase Coatings, Inc. Thermal barrier composition
US8992806B2 (en) 2003-11-18 2015-03-31 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements

Also Published As

Publication number Publication date
JPH0444741B2 (enrdf_load_stackoverflow) 1992-07-22

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