JPS60253240A - Method for evaluation of semiconductor device - Google Patents

Abstract

PURPOSE:To enable to easily evaluate a semiconductor device under various condition by a method wherein the semiconductor device is brought in a current- applied state, and thermal stress is added by the generation of heat by itself. CONSTITUTION:The resistance value between a socket 2 and the lead 5 of a semiconductor device 4 is measured using a resistance meter. Then, when voltage is applied to a semiconductor chip 7 and an operating circuit 11 by giving an ON state to a switch 13, the semiconductor chip 7 is turned into the state of operation. At this time, Joule heat is generated on the semiconductor chip 7 is proportion to the degree of consumption of power, and the semiconductor device 4 generates heat by itself, thereby enabling to give thermal stress to the lead 5 and a connecting terminal 3. Then, when the switch 13 is turned OFF, the semiconductor chip 7 and the operating circuit 4 are brought into a non- operational state, and the semiconductor device 4 stops the genera-of heat by itself. A thermal change is given between the lead 5 and the connecting terminal by repeating the make and break operation of the switch 13 as above-mentioned, and the change of contact resistance by thermal stress can be evaluated by repeating a resistance measurement, a current-applied state and a non-operational state.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a method for evaluating a semiconductor device that applies changes in contact resistance due to thermal stress when the semiconductor device is inserted into a socket.

[Prior art]

A conventional evaluation method of this type is shown in FIG. In this figure, 1 is a board, 2 is a socket that is IK-bonded to this board, 3 is a contact terminal attached to this socket 2, 4 is a semiconductor device without inch leads inserted into the socket 2, and 5 is a Leads 6 of this semiconductor device 4 are detection terminals attached to the contact terminals 3 and leads 5, respectively.

Next, a conventional evaluation method will be explained. The socket 2 is fixed to the board 1 by adhesive and soldering.

After inserting the semiconductor device 4 into the socket 2, the detection terminal 6 is soldered to the contact terminal 3 and the lead 5. The resistance between each detection terminal 6 is measured with a resistance meter.

This value is the contact resistance between the contact terminal 3 of the socket 2 and the lead 5 of the semiconductor device 4.

Next, thermal stress is applied to the socket 2 and the semiconductor device 4 through a temperature cycle in which the substrate 1 is alternately placed in a high-temperature storage device and a low-temperature storage device.

If thermal stress is applied to the socket 2 and the semiconductor device 4, the linear expansion coefficients will differ due to the difference in the materials and plating of the contact terminals 3 and the leads 5, resulting in misalignment of the contact portions. By repeating this, the conductivity of the contact portion deteriorates and the resistance increases.

In this way, the conventional method is to measure the resistance between the detection terminals 6.

By repeatedly performing temperature cycles, semiconductor devices were evaluated by detecting changes in contact resistance due to thermal stress.

In the conventional method described above, in order to apply heat stress to the semiconductor device 4 and the socket 2, it is necessary to alternately replace the equipment with a high-temperature storage device and a low-temperature storage device, which has the disadvantage of poor workability. .

[Summary of the invention]

This invention was made in order to eliminate the above-mentioned drawbacks, and the purpose is to provide a method that can evaluate a semiconductor device by putting it in an energized state (iC) and applying heat stress by causing self-heating. There is. The present invention will be explained below with reference to the drawings.

[Embodiments of the invention]

FIG. 2 shows an embodiment of the present invention, and is an evaluation example of a resin-sealed semiconductor device using a 16-pin dual line package as an example. In FIG. 2, numerals 1 to 6 are the same as in FIG. There is a thin metal wire inside,
Reference numeral 9 indicates a connection line connecting the semiconductor chip T or connecting every other pin of the semiconductor chip T using an internal thin metal wire or an external metal wire, and 10 a connection line that connects unconnected pins to each other. The external connection connected on the terminal 3 side is a wiring, and both 9aK detection terminals 6 of the wiring 10 are attached to this external connection. Reference numeral 11 denotes an operating circuit composed of solid resistors and the like wired on the substrate 1 in order to operate the semiconductor chip 7;
12 is a power supply for the semiconductor chip 1 and the operating circuit 11;
13 is a switch that controls this power supply 12.

Next, the operation will be explained.

As in the conventional case, the resistance value between the socket 2 and the lead 5 of the semiconductor device 4 is measured by measuring the resistance between the detection terminals 6 with a resistance meter. Next, by closing the switch 13, a voltage is applied to the semiconductor chip 7 and the operating circuit 11, and the semiconductor chip 7 enters the operating state. At this time, the semiconductor chip 1 generates Joule heat in accordance with the power consumption, and the semiconductor device 4 can apply thermal stress to the self-heating shield 5 and the contact terminals 3.

Next, when the switch 13 is opened, the semiconductor chip 1° operation circuit 11 is brought to a halted state, and the semiconductor device 4 stops self-heating. By repeatedly opening and closing the switch 13 as described above, thermal stress is applied by causing a thermal change between the lead 5 and the contact terminal 3. By repeating resistance measurement, energized state, and de-energized state, changes in contact resistance due to thermal stress can be evaluated.

Then, by changing the voltage value and the values of the load resistance of the operating circuit 11, the self-heating amount is controlled by K,
Various conditions can be set. Also, external wiring is 10. By changing the connection pins of the detection terminal 6, changes between arbitrary pins can be evaluated.

In the above embodiment, a resin-sealed type semiconductor device 4 was described, but the thermal stress caused by self-heating is applied, and it is applicable not only to resin-sealed type but also to semiconductor chips connected by leads and sockets. be able to.

In addition, the number of circuits Vc4i is created on the board 1, and the operating circuit 1
By changing the first condition, it is possible to evaluate multiple heat stress conditions at once.

〔Effect of the invention〕

As explained above, the present invention operates a semiconductor chip by turning on and off an external power supply to cause the semiconductor device to self-heat, and evaluates the semiconductor device by measuring the contact resistance between the leads of the semiconductor device and the contact terminals of the socket. As a result, multiple thermal stresses can be applied without using conventional high-temperature and low-temperature storage devices, and the effect of easily evaluating under various conditions can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a side view of a semiconductor device showing a conventional evaluation method, and FIG. 2 is a side view of a semiconductor device showing an evaluation method according to an embodiment of the present invention. In the figure, 1 is a board, 2 is a socket, 3 is a contact terminal, 4 is a semiconductor device, 5 is a lead, 6 is a detection terminal, 1 is a semiconductor chip, 8 is an internal thin metal wire, 9 is a lead connection line, and 10 is a External wiring, 11 is an operating circuit, 12 is a power supply, and 13 is a switch. Note that the same reference numerals in the figures indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Figure 1 Figure 2

Claims (1)

[Claims] In the method of applying thermal stress to the semiconductor device when the semiconductor device is mounted in a socket, and measuring and evaluating a thermal stress change in contact resistance between the lead and the contact terminal of the socket, the semiconductor device is brought into an energized state. A method for evaluating a semiconductor device, characterized in that the thermal stress is applied by applying self-heating due to heat generation, and necessary evaluation is performed.