JPS60249354A - Lead frame structure - Google Patents
Lead frame structureInfo
- Publication number
- JPS60249354A JPS60249354A JP59104570A JP10457084A JPS60249354A JP S60249354 A JPS60249354 A JP S60249354A JP 59104570 A JP59104570 A JP 59104570A JP 10457084 A JP10457084 A JP 10457084A JP S60249354 A JPS60249354 A JP S60249354A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- resin
- soldering
- mold resin
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
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- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
- H01L2924/15747—Copper [Cu] as principal constituent
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Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明はプラスチックモールドＩＣパッケージのモール
ドレジンに挿着される銅糸のリードフレーム構造に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a copper thread lead frame structure inserted into a mold resin of a plastic molded IC package.
近年ＩＣパッケージの多様化に伴い、消費電力１発熱量
の大きなプラスチックモールドＩＣパッケージが多数採
用されてきている。ＩＣパッケージのリードフレームと
しては鉄系、鉄−ニッケル系（４２アロイ）などが一般
に採用されているが、上記プラスチックモールドＩＣパ
ッケージの場合には従来と同様の性能保持のために熱伝
導率が良く、かつ安価な銅系のリードフレームが採用さ
れている。しかしながら、銅系のリードフレームではモ
ールドレジンとの密着性が劣ると共に、はんだ不良が生
じ易い欠点が有る。In recent years, with the diversification of IC packages, many plastic molded IC packages, which consume a large amount of heat per unit of power consumption, have been adopted. Iron-based, iron-nickel-based (42 alloy), etc. are generally used as lead frames for IC packages, but in the case of the above-mentioned plastic molded IC packages, they have good thermal conductivity to maintain the same performance as conventional ones. , and uses an inexpensive copper lead frame. However, copper-based lead frames have disadvantages in that they have poor adhesion with mold resin and are susceptible to solder defects.
すなわち、第１図に示す如く、リードフレーム１はその
一端部１ａをモールドレジン５内に挿着し、２回クラン
ク曲げされて他端部１ｂ＠に突出形成される。他端部１
ｂは基板４上に形成される銅は〈３にはんだ付は固定さ
れる。That is, as shown in FIG. 1, one end 1a of the lead frame 1 is inserted into a mold resin 5, and the lead frame 1 is crank-bent twice to form a protruding other end 1b@. Other end 1
b is the copper formed on the substrate 4 and is fixed by soldering to <3.
モールドレジン５とリードフレーム１の一端部１ａとは
密着しなければならないが、銅系のリードフレーム１の
場合にはそれが不十分となり、耐湿信頼度が低下する欠
点が確認されている。また銅系のリードフレーム１はは
んり付性が極めて良く、他の材料のものと混在して基板
４に一括はんだ付けすると、第１図に示す如くはんだが
リードフレーム１にぬれ上がり、はんだの吸い上り部２
が形成され、結果としてはんだ不良が生ずる欠点が生ず
る。Although the mold resin 5 and one end 1a of the lead frame 1 must be in close contact with each other, it has been confirmed that this is insufficient in the case of a copper-based lead frame 1, resulting in a decrease in moisture resistance reliability. In addition, the copper-based lead frame 1 has extremely good solderability, and when it is mixed with other materials and soldered all at once to the board 4, the solder gets wet onto the lead frame 1 as shown in Figure 1, and the solder Suction part 2
This results in the formation of defects such as solder defects.
このはんだ不良を防止する手段として、ＩＪ−ドフレー
ム１の最初のクランク曲げ部１Ｃ近傍にはんだ付性の劣
るダムをめっき等により設けるものが採用されるが、上
記の耐湿信頼性に関しては解決されない。As a means to prevent this soldering failure, a method is adopted in which a dam with poor solderability is provided by plating or the like near the first crank bend part 1C of the IJ-deframe 1, but this does not solve the above-mentioned moisture resistance reliability problem. .
本発明は以上の事情に鑑みてなされたものであり、その
目的はモールドレジンとの密着性を散着し、耐湿信頼性
を向上せしめると共に、はんだ付不良を低減させるリー
ドフレーム構造を提供することにある。The present invention has been made in view of the above circumstances, and its purpose is to provide a lead frame structure that improves adhesion with mold resin, improves moisture resistance reliability, and reduces soldering defects. It is in.
本発明は上記目的を達成するために、銅系のリードフレ
ームのモールドレジン挿着部から最初のクランク曲げさ
れる部分近傍までに、上記モールドレジンと密着怖の良
好な被膜部を予め形成し、該リードフレームを上記モー
ルドレジンに挿着したのち基板にはんだ付けするように
したリードフレーム構造を特徴としたものであるＯ
〔発明の実施例〕
以下、本発明の実施列を図面に基づき説明するＯ
まず、本実施例の概要を説明する。In order to achieve the above object, the present invention preforms a coating portion that has good adhesion with the mold resin from the mold resin insertion part of the copper lead frame to the vicinity of the first crank bending part, The present invention is characterized by a lead frame structure in which the lead frame is inserted into the mold resin and then soldered to the substrate. [Embodiments of the Invention] Hereinafter, embodiments of the present invention will be explained based on the drawings. O First, an outline of this embodiment will be explained.
第２図に示す如く、銅系材料からなるリードフレーム１
のモールドレジン５内に挿着される一端部１ａから最初
のクランク曲げ部１Ｃ近傍間には、鉄、鉄−ニッケル、
ヌはニッケルの７ラツシユめっき部７が形成される。こ
れ等の材質のものけモールドレジン５と密着し易いため
リードフレーム１とモールドレジン５との界面接着力が
向上する◎
一方１クランク曲げ部１Ｃから他端部１ｂ間は銅系材料
のままであるが、はんだ付は時に基板４＠からめれ上げ
られてきたはんだはクランク曲げ部１Ｃの所で止められ
、第１図に示した吸い上り部２が形成されない。As shown in Fig. 2, a lead frame 1 made of copper-based material
Iron, iron-nickel,
7-latch plating portions 7 of nickel are formed. Since these materials easily adhere to the mononoke mold resin 5, the interfacial adhesion between the lead frame 1 and the mold resin 5 is improved.◎ On the other hand, the area between the bent part 1C of the crank 1 and the other end 1b remains the copper-based material. However, during soldering, the solder that has been lifted up from the board 4@ is stopped at the crank bent portion 1C, and the suction portion 2 shown in FIG. 1 is not formed.
次に、本実施例を更に詳細に説明する。Next, this embodiment will be explained in more detail.
第２図に示す如く、リードフレーム１のモールドレジン
５に挿着される一端部１ａの端側には部分銀めっき部８
が形成され、モールドレジン５内の金ワイヤ９と接続す
る。この部分銀めっき部８はリードフレーム１がモール
ドレジン５に挿着される前に単体で形成されるものであ
る。すなわち、リードフレーム１には単体としてめっき
工程が従来より必要とされている。As shown in FIG. 2, one end 1a of the lead frame 1 that is inserted into the mold resin 5 has a partial silver plating portion 8.
is formed and connects with the gold wire 9 in the mold resin 5. This partial silver plating portion 8 is formed singly before the lead frame 1 is inserted into the mold resin 5. That is, the lead frame 1 has conventionally required a plating process as a single unit.
本実施例はそのめっき工程において、部分銀めっき部８
を形成する前に上記の如く一端部１ａから最初のクラン
ク曲げ部１Ｃ近傍間にニッケルからなるフラッジ−めっ
き部７を形成し、その後、部分銀めっき部８を形成する
ようにしたものである。In this example, in the plating process, the partial silver plating part 8
As described above, the fludge-plated portion 7 made of nickel is formed between the one end portion 1a and the vicinity of the first crank bend portion 1C, and then the partial silver-plated portion 8 is formed.
フラッシュめっき部７の膜厚は約１μｍで、極めて薄い
ため、リードフレーム１の熱伝導性すなわち熱放散性は
ほとんど損われない。The film thickness of the flash plating portion 7 is approximately 1 μm, which is extremely thin, so that the thermal conductivity, that is, the heat dissipation performance of the lead frame 1 is hardly impaired.
以上により、上記の如くリードフレーム１とモールドレ
ジン５との密着性が確保されると共に、はんだ付時には
フラッシュめっき部７の所ではんだのめれ上りが止めら
れ、吸い上り部２（第１図）のごときものが発生せず図
示の如きはんだめっき部６が形成され、基板４測に確実
にはんだ付けされる。これによりはんだ付不良を低減す
ることができる・
次に、本実施例の効果を実験例により説明する０
実験例に使用されるパッケージとしては、第３図に示す
如く、通常のシー−リンク型面付はデュアルインライン
パッケージのモデル品が採用される。リードフレーム数
１６．リードフレームピッチは１．２４．、である◎ま
だモールドレジン５は一般のエポキシ系（フィラーンリ
カ）のモールデングコンパウンドが用いられる。As described above, the adhesion between the lead frame 1 and the mold resin 5 is ensured as described above, and at the time of soldering, the solder is prevented from running up at the flash plating part 7, and the suction part 2 (see Fig. ), the solder plating part 6 as shown in the figure is formed, and it is reliably soldered to the board 4. This makes it possible to reduce soldering defects.Next, the effects of this embodiment will be explained using an experimental example.The package used in the experimental example is a normal sea-link type package, as shown in Figure 3. For imposition, a dual inline package model is used. Number of lead frames: 16. Lead frame pitch is 1.24. , ◎For the mold resin 5, a general epoxy-based (Fillan Rica) molding compound is used.
フラッシュめっき部７としては９０重量％５ｎ−１０重
量％ｐｂ組成のものを４μｍないし５μｍの膜厚で施こ
し、材質はニッケル系のものを用いる一方、本実施例の
ものと比較する試料として・上記の７ラクシーめっき部
７のないものおよびリードフレーム１に鉄−ニッケル（
４２アロイ）を用いた同一形状のものを採用した□
表に上記３試料の耐湿性およびはんだ付は不良率の比較
値を示す。As the flash plating part 7, a film having a composition of 90% by weight 5n-10% by weight PB was applied to a film thickness of 4 μm to 5 μm, and a nickel-based material was used.As a sample for comparison with that of this example, Iron-nickel (iron-nickel) is used on the lead frame 1 and the one without the above-mentioned 7 Luxy plating part 7.
42 alloy) of the same shape were adopted. The table shows the comparative values of moisture resistance and soldering defect rate of the three samples mentioned above.
耐湿性比較試験は公知のプレツシャリツカ試験（１２１
°Ｃ，１００％ＲＨ，２気圧）で累積不良率が５０％に
達した試験時間をめ・鉄−ニッケルのリードフレームか
らなる試料を１００として相対値により表示した。また
はんだ付は不良率はテストパターンにはんだペーストを
印刷シ、赤外線リフロー装置により欠陥発生率をめ、同
じく鉄−ニッケルのリードフレームからなる試料を１０
０として相対値で表示した・また試料数はそれぞれ２０
個とし、その平均値により表示した０表で明らかの如く
、プレツシャリツ力試験時間は本実施例のものは鉄−ニ
ッケル系の試料と同等又はそれ以上となり、耐湿性に優
れることが実証された。The moisture resistance comparison test was carried out using the well-known Plescharitska test (121
The test time at which the cumulative failure rate reached 50% was expressed as a relative value, with the sample made of an iron-nickel lead frame set as 100. For soldering, the defect rate was determined by printing solder paste on a test pattern and measuring the defect rate using an infrared reflow device.
Relative values are shown as 0.The number of samples is 20 for each.
As is clear from Table 0, which shows the average value of each sample, the pressing force test time of this example was equal to or longer than that of the iron-nickel sample, demonstrating that it has excellent moisture resistance.
またはんだ不良率については、鉄−ニッケルのものとほ
ぼ同一であり、十分な効果が認められた口
本実施例ではフラッジ−めっき部７としてニッケルを用
いたが、鉄あるいは鉄−ニッケル。The solder defect rate was almost the same as that of iron-nickel, and a sufficient effect was recognized.In this embodiment, nickel was used as the fludge-plated portion 7, but iron or iron-nickel was used.
鉄−＝ツケ／ｌ’−コバルト、銅−錫合金等ヲ用イても
よく、はぼ同様の効果が上げられる。Iron-=Tsuke/l'-cobalt, copper-tin alloy, etc. may also be used, and similar effects can be achieved.
また７ラツシシめっきの厚さは熱放散の観点から５０な
いし５ｏｏｉ（オングストローム）程度が望ましいが、
熱放散の要求度が低い場合にはさらに厚くしてもよく、
通常のめっきであってもよい。更に、フラッシュめっき
部７はめっき工程によって形成されるものでなくともよ
く、マスク蒸着等により被膜部を形成するものであって
もよいう
〔発明の効果〕
以上の説明によって明らかの如く、本発明によればモー
ルドレンジとリードフレームとの界面接着力が改善され
、耐湿信頼性を向上すると共に、はんだ付不良を低減し
得る効果が上げられる。In addition, the thickness of the 7-layer plating is preferably about 50 to 50 angstroms from the viewpoint of heat dissipation.
If heat dissipation requirements are low, it may be thicker.
Ordinary plating may be used. Further, the flash plating portion 7 does not need to be formed by a plating process, and a coating portion may be formed by mask vapor deposition or the like. [Effects of the Invention] As is clear from the above description, the present invention According to the method, the interfacial adhesion between the mold range and the lead frame is improved, moisture resistance reliability is improved, and soldering defects can be reduced.
第１図は従来の銅系リードフレームを有するパッケージ
のはんだ付不良の状態を示す部分断面図、第２図は本発
明一実施例を示す部分拡大断面図、第３図は実ｉｎの実
験用試料形状を示す部分斜視図である□
１・・・リードフレーム、１ａ・・・一端部、１ｂ・・
・他端部、 １Ｃ・・・クランク曲げ部、５・・・銅は
く、 ４・・基板、
５・・・モールドレジン、 ６・・・はんだめっき部、
７・・・フラッシュめっき部、
８・・・部分銀めっき部、９・・・金ワイヤ。
代理人弁理士 高 橋 明 夫Fig. 1 is a partial cross-sectional view showing a soldering failure state of a package with a conventional copper lead frame, Fig. 2 is a partially enlarged cross-sectional view showing an embodiment of the present invention, and Fig. 3 is an actual experimental image. □ It is a partial perspective view showing the sample shape. 1... Lead frame, 1a... One end, 1b...
・Other end part, 1C... Crank bent part, 5... Copper foil, 4... Board, 5... Mold resin, 6... Solder plating part,
7... Flash plating part, 8... Partial silver plating part, 9... Gold wire. Representative Patent Attorney Akio Takahashi
Claims (1)
ジンに一端部を挿着すると共にクランク曲げされて他端
部側に突出形成される銅系材料からなるリードフレーム
構造において、上記モールドレジンの挿着部から最初の
上記クランク曲げ部近傍間に上記モールドレジンと密着
性の良好な被膜部を形成することを特徴とするリードフ
レーム構造。 ２、上記被膜部がニッケル系フラッジ−めっきから形成
されるめっき膜あることを特徴とする特許請求の範囲第
１項に記載のリードフレーム構造。[Scope of Claims] 1. In a lead frame structure made of a copper-based material, one end of which is inserted into the mold resin of a plastic molded IC package and then crank-bent to protrude from the other end. A lead frame structure characterized in that a coating portion having good adhesion to the mold resin is formed between the attachment portion and the vicinity of the first crank bending portion. 2. The lead frame structure according to claim 1, wherein the coating portion is a plating film formed from nickel-based fludge plating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59104570A JPS60249354A (en) | 1984-05-25 | 1984-05-25 | Lead frame structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59104570A JPS60249354A (en) | 1984-05-25 | 1984-05-25 | Lead frame structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60249354A true JPS60249354A (en) | 1985-12-10 |
Family
ID=14384100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59104570A Pending JPS60249354A (en) | 1984-05-25 | 1984-05-25 | Lead frame structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60249354A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6419756A (en) * | 1987-07-15 | 1989-01-23 | Hitachi Ltd | Electronic component having copper alloy lead |
| US5117275A (en) * | 1990-10-24 | 1992-05-26 | International Business Machines Corporation | Electronic substrate multiple location conductor attachment technology |
| US5229328A (en) * | 1990-10-24 | 1993-07-20 | International Business Machines Corporation | Method for bonding dielectric mounted conductors to semiconductor chip contact pads |
| US5233221A (en) * | 1990-10-24 | 1993-08-03 | International Business Machines Corporation | Electronic substrate multiple location conductor attachment technology |
-
1984
- 1984-05-25 JP JP59104570A patent/JPS60249354A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6419756A (en) * | 1987-07-15 | 1989-01-23 | Hitachi Ltd | Electronic component having copper alloy lead |
| US5117275A (en) * | 1990-10-24 | 1992-05-26 | International Business Machines Corporation | Electronic substrate multiple location conductor attachment technology |
| US5229328A (en) * | 1990-10-24 | 1993-07-20 | International Business Machines Corporation | Method for bonding dielectric mounted conductors to semiconductor chip contact pads |
| US5233221A (en) * | 1990-10-24 | 1993-08-03 | International Business Machines Corporation | Electronic substrate multiple location conductor attachment technology |
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