JPS60223143A - Packaging method - Google Patents
Packaging methodInfo
- Publication number
- JPS60223143A JPS60223143A JP59079024A JP7902484A JPS60223143A JP S60223143 A JPS60223143 A JP S60223143A JP 59079024 A JP59079024 A JP 59079024A JP 7902484 A JP7902484 A JP 7902484A JP S60223143 A JPS60223143 A JP S60223143A
- Authority
- JP
- Japan
- Prior art keywords
- high frequency
- metal frame
- melting point
- cap
- low melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 title abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 25
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 238000002844 melting Methods 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 230000006698 induction Effects 0.000 claims abstract description 6
- 239000000919 ceramic Substances 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 4
- 238000012856 packing Methods 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 15
- 230000008018 melting Effects 0.000 abstract description 14
- 230000010355 oscillation Effects 0.000 abstract description 6
- 230000006866 deterioration Effects 0.000 abstract description 5
- 230000005684 electric field Effects 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 239000007767 bonding agent Substances 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000003292 glue Substances 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000003466 welding Methods 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
技術分野
この発明は水晶振動子等のパッケージング方法に関する
。DETAILED DESCRIPTION OF THE INVENTION Technical Field The present invention relates to a packaging method for crystal resonators and the like.
従来技術
水晶振動子は水晶片のカット方向にしたがう振動モード
によって各種の構造のものがあり、円板状の水晶片を用
いるものでは、例えば実開昭５７−１５１０２２号公報
に開示されるように、金属外環内にガラスを介してリー
ド線を気密絶縁的に封着し、このリード線と一体に形成
されるかこのリード線に溶接固定されたサポート部材に
、水晶片を垂直状に取り付けて、金属製のキャップを前
記金属外環に抵抗溶接、半田付け、冷間圧接等で固着封
止した構造が一般的であった。Conventional crystal oscillators have various structures depending on the vibration mode that follows the cutting direction of the crystal piece, and those using a disk-shaped crystal piece are, for example, as disclosed in Japanese Utility Model Application No. 57-151022. A lead wire is hermetically and insulated sealed inside a metal outer ring through glass, and a crystal piece is vertically attached to a support member that is formed integrally with this lead wire or is welded and fixed to this lead wire. Therefore, a structure in which a metal cap is fixedly sealed to the metal outer ring by resistance welding, soldering, cold pressure welding, etc. has been common.
しかしながら、最近の電気、電子機器の軽薄短小化に伴
って、水晶振動子も薄型のものが要求されるようになっ
てきた。そこで、例えば特開昭５８−１５８１４号公報
に開示されるようなフヲリトパソケージも開発されてき
たが、パッケージを樹脂で構成したものは信頼性に乏し
い欠点があった。このため、セラミック製のフラットパ
ノケージも開発されている。However, as electrical and electronic devices have recently become lighter, thinner, and smaller, crystal resonators have also been required to be thinner. Therefore, for example, a filitop package as disclosed in Japanese Patent Application Laid-Open No. 58-15814 has been developed, but the package made of resin has the drawback of poor reliability. For this reason, ceramic flat panocages have also been developed.
第８図は従来のセラミック製のフヲリトパッヶう断面図
を示す。図において、ｌはセラミック製の矩形状の底板
で、セラミック製の枠体２との間にガラス８を介してリ
ード４，５が慨密に封着されている。前記リード４．５
上に跨って水晶片６が載置され、上面の電極７は導電性
接着剤８で一方のり一ド４に接続され、下面の電極９は
導電性接着剤１０で他方のり一ド５に接続されている。FIG. 8 shows a sectional view of a conventional ceramic fillet pad. In the figure, reference numeral 1 denotes a rectangular bottom plate made of ceramic, and leads 4 and 5 are tightly sealed between it and a frame 2 made of ceramic with a glass 8 interposed therebetween. Said lead 4.5
A crystal piece 6 is placed across the top, the electrode 7 on the top surface is connected to one glue 4 with a conductive adhesive 8, and the electrode 9 on the bottom surface is connected to the other glue 5 with a conductive adhesive 10. has been done.
そして、枠体２の士に低融点ガラスペースト１１を塗布
形成すると共に、セラミ、り嘗のキャップ１２の下面に
も低融点ガラスベーヌト１８を塗布形成して重ね合せで
ある。Then, a low melting point glass paste 11 is applied and formed between the frames 2, and a low melting point glass paste 18 is also applied and formed on the lower surface of the ceramic cap 12, so that they are overlapped.
しかしながら、従来のパッケージング方法は、リード封
着用のガラス８と、導電性接着剤８，１゜の融点に比較
して、低融点ガラスペースト１１゜１８の融点を低く設
定しているが、封着時に高温炉を通して全体を４００〜
４５０℃程度に加熱するため、リード４．５の酸化や水
晶片６の劣化が生じたり、導電性接着剤８．ｌＯとして
有機導電性接着剤を用いるとガスを発生し、このガスが
水晶片６に付着して、発振周波数の低下、Ｑ値の減少９
発振周波数安定度の低下等を生ずるという問題点があっ
た。However, in the conventional packaging method, the melting point of the low melting point glass paste 11°18 is set lower than that of the glass 8 for lead sealing and the conductive adhesive 8,1°; Upon arrival, the entire product is passed through a high temperature furnace to a temperature of 400~
Because it is heated to about 450°C, the leads 4.5 may oxidize, the crystal piece 6 may deteriorate, and the conductive adhesive 8. When an organic conductive adhesive is used as lO, gas is generated and this gas adheres to the crystal piece 6, resulting in a decrease in the oscillation frequency and a decrease in the Q value 9
There was a problem in that the oscillation frequency stability decreased.
発明の目的
そこで、この発明は信頼性の高いパッケージング方法を
提供することを目的とするものである。OBJECT OF THE INVENTION Therefore, it is an object of the present invention to provide a highly reliable packaging method.
発明の構成
この発明は本体とキヤツジとの間に、上下面に低融点ガ
ラスペーストを配置した状態で金属枠を介在して、この
金属枠を高周波誘導加熱方式で加熱することにより、前
記低融点ガラスペーストを溶融させて、本体とキャップ
とを封止することを特徴とするものである。Structure of the Invention This invention provides a metal frame with a low melting point glass paste placed on the upper and lower surfaces of the main body and the carriage, and heating the metal frame using a high frequency induction heating method to reduce the low melting point. The main feature is that the main body and the cap are sealed by melting glass paste.
すなわち、上記の方法によれば、金属枠のみが主として
加熱されて、その上下面に配置されたガラヌベーヌトが
溶融し、リードや素子や導電性接着剤はほとんど加熱さ
れないので、リードの酸化や素子の劣化がなく、特に有
機導電性接着剤を用いても、ガスを発生することがなく
、シたがって信頼性の高い電子部品が得られる。That is, according to the above method, only the metal frame is mainly heated and the galanubene placed on the upper and lower surfaces of the metal frame is melted, and the leads, elements, and conductive adhesive are hardly heated, so there is no possibility of oxidation of the leads or damage to the elements. There is no deterioration, and in particular, even when an organic conductive adhesive is used, no gas is generated, so a highly reliable electronic component can be obtained.
実施例
以下に、この発明の一実施例を図面を参照してし、第２
図は第１図のＩＩ−ＩＩ線に沿う断面図を示す。図にお
いて、２０は本体でセラミック製の円形の底板２１と、
セラミック製の環状枠２２との間にホウケイ酸ガラス等
の封着用ガラス２３を介してコバーｐと称される鉄・ニ
ッケル・コバルト合金（Ｆｅ５５％、Ｎｉ２８％、Ｃ０
１７％）または４２合金と称される鉄・ニッケｐ合金（
Ｆｅ１２チ、Ｎｉ４２係）等よりなる一対のり一ド２４
゜２５が気密に封着されて構成されている。前記一対の
リード２４．２５上に跨って円板状の水晶片２６が載置
され、上面の電極２７は有機導電性接着剤２８で一方の
リード２４に接続され、下面の電極２９は有機導電性接
着剤３０で他方のリード２５に接続されている。そして
、前記本体２０の環状枠２２の上には、上下両面に融点
が４００℃程度の低融点ガラスペース）８１．８２が被
着された前記リード２４．２５と同一の合金よりなる環
状の金属枠８８が載置され、さらにセラミ・ツク製の円
板状のキヤツジ３４が載置されている。そして、上記組
立体の周囲には、高周波加熱コイル８５が配置されてい
る。EXAMPLE Below, one example of the present invention will be described with reference to the drawings, and a second example will be described.
The figure shows a sectional view taken along line II-II in FIG. In the figure, 20 is the main body, which includes a circular bottom plate 21 made of ceramic,
An iron-nickel-cobalt alloy (Fe55%, Ni28%, C0
17%) or iron-nickel p alloy called 42 alloy (
A pair of glue (Fe12, Ni42) etc.
25 are hermetically sealed. A disk-shaped crystal piece 26 is placed across the pair of leads 24 and 25, the electrode 27 on the top surface is connected to one lead 24 with an organic conductive adhesive 28, and the electrode 29 on the bottom surface is an organic conductive adhesive 28. It is connected to the other lead 25 with adhesive 30. On the annular frame 22 of the main body 20, a ring-shaped metal made of the same alloy as the lead 24, 25 is coated with a low-melting glass space (81, 82) having a melting point of about 400° C. on both upper and lower surfaces. A frame 88 is placed thereon, and a disk-shaped carriage 34 made of ceramic is also placed thereon. A high frequency heating coil 85 is arranged around the assembly.
上記の構成において、高周波加熱コイ／ｌ／８５に高周
波電流を流すと、高周波電界が発生して、高周波誘導に
よって金属枠３３に高周波電流が流れ、ジュール熱によ
って高温状態になってその上下面に形成した低融点ガラ
スペース）ｆｌｌｌ、８２が溶融して、環状枠２２と金
属枠８８とキャップ８４とがガラスを介して固着封止さ
れる。このとき、リード２４．２５を金属枠８８と同一
材料で構成していても、これらリード２４．２５は枠状
を呈していないので高周波電流が少なく、したがって温
度上昇も小さいので、有機導電性接着剤２８゜３０から
ガスを発生することがなく、したがって発生ガスに起因
する水晶片２６の発振周波数の低下、Ｑ値の減少１発振
周波数１安定度の劣化等の信頼性低下が防止できる。In the above configuration, when a high-frequency current is passed through the high-frequency heating coil/l/85, a high-frequency electric field is generated, and the high-frequency current flows through the metal frame 33 due to high-frequency induction. The formed low melting point glass space (82) melts, and the annular frame 22, metal frame 88, and cap 84 are fixedly sealed via the glass. At this time, even if the leads 24, 25 are made of the same material as the metal frame 88, since these leads 24, 25 do not have a frame shape, the high frequency current is small, and therefore the temperature rise is also small. No gas is generated from the agent 28.30, and therefore reliability deterioration such as a decrease in the oscillation frequency of the crystal blank 26, a decrease in the Q value, and deterioration in the stability of the oscillation frequency and stability due to the generated gas can be prevented.
なお、上記実施例は、本体２０として底板２１と環状枠
２２とをガラス２３で接着固定したものを示したが、底
板の周縁に一体の筒状側壁部を有し、この側壁部の一部
に形成した透孔にガラスを介してリードを封着したもの
でもよい。In the above embodiment, the main body 20 is a bottom plate 21 and an annular frame 22 that are adhesively fixed with glass 23, but the bottom plate has an integral cylindrical side wall around the periphery. A lead may be sealed to a through hole formed in the glass via glass.
また、全体の形状は図示するように円形にする方が高周
波加熱のために有利であるが、高周波加よ
熱コイル矩形状にすれば、全体を矩形状に形成してもよ
い。Furthermore, although it is advantageous for the overall shape to be circular as shown in the figure for high frequency heating, if the high frequency heating heating coil is made into a rectangular shape, the entire shape may be formed into a rectangular shape.
さらに、この発明は円板状の水晶片のみならず１、矩形
状、音叉形状等の水晶片を用いるもの、あるいは半導体
素子その池の電子素子を用いる場合のパ・７ケージング
に適用することができる。Furthermore, the present invention can be applied not only to disk-shaped crystal pieces, but also to packaged casings when using crystal pieces in rectangular or tuning fork shapes, or when using semiconductor elements or electronic elements. can.
発明の効果
この発明は以上のように、本体とギヤ７プとの間に、上
下面に低融点ガラスペーストを配置した状態で金属枠を
介在して、この金属枠を高周波誘導加熱方式で加熱する
ことにより、金属枠の上下面に配置した低融点ガラスペ
ーストを溶融させて本体とキャップとを封止するから、
電気炉による加熱封着に比較して、低融点ガラスペース
トのみを選択的に加熱溶融させることが可能になり信頼
性の高いパッケージングができる。Effects of the Invention As described above, this invention interposes a metal frame between the main body and the gear 7 with low-melting glass paste arranged on the upper and lower surfaces, and heats this metal frame using a high-frequency induction heating method. By doing this, the low melting point glass paste placed on the top and bottom surfaces of the metal frame is melted to seal the main body and the cap.
Compared to heat sealing using an electric furnace, it is possible to selectively heat and melt only the low-melting glass paste, resulting in highly reliable packaging.
第１図はこの発明の一実施例のパッケージング方法につ
いて説明するためのキャリ１を除いた平面図、第２図は
第１図の■−■線に沿う断面図である。
第８図は従来のパリケージング方法について説明するた
めのキャップを除いた平面図、第４図は第８図の■−■
線に沿う断面図である。
２０・・・・・本体、
２１・・・・・底板。
２２・・・・・環状枠、
２８・・・・・ガラス、
２４．２５・・・・・リード、
２６・・・・・・・・・・・・・・・ 素子（水晶片）
、２８．８０・・・・・・有機導電性接着剤、８１．８
２・・・・・低融点ガラスペーヌト、８８・・・・・・
・・・・・・・・・・ 金属枠、８４・・・・・・・・
・・・・・・・・ キャップ、３５・・・・・・・・・
・・・・・・・・・ 高周波加熱コイル。
特許出願人 関西日本電気株式会社
第１図
第２図FIG. 1 is a plan view with the carrier 1 removed for explaining a packaging method according to an embodiment of the present invention, and FIG. 2 is a sectional view taken along the line 1--2 in FIG. Fig. 8 is a plan view with the cap removed to explain the conventional paricaging method, and Fig. 4 is a plan view of Fig. 8 from ■-■.
It is a sectional view along a line. 20...Body, 21...Bottom plate. 22...Annular frame, 28...Glass, 24.25...Lead, 26...Element (crystal piece)
, 28.80...Organic conductive adhesive, 81.8
2...Low melting point glass paint, 88...
・・・・・・・・・ Metal frame, 84・・・・・・・・・
・・・・・・・・・ Cap, 35・・・・・・・・・
・・・・・・・・・ High frequency heating coil. Patent applicant: Kansai NEC Corporation Figure 1 Figure 2
Claims (1)
本体の前記リードに素子を固着し、本体の周縁にガラス
を介してセラミ・ツク製のギヤリプを気密に封止してな
る電子部品の本体とキャップとの封止工程において、 前記本体とキャップとの間に、上下面に低融点ガラスベ
ーヌトを配置した状態で金属枠を介在して、この金属枠
を高周波訪導加熱方式で加熱することにより、金属枠の
上下面に配置した低融点ガラスペーストを溶融させて本
体とキャップとを封止することを特徴とするパ・ンケー
ジング方法。[Claims] An element is fixed to the lead of a ceramic body in which lead wires are hermetically sealed through glass, and a gear lip made of ceramic is hermetically sealed around the periphery of the body through glass. In the process of sealing the cap and the main body of an electronic component, a metal frame is interposed between the main body and the cap with low-melting glass beanutes arranged on the upper and lower surfaces, and the metal frame is heated by high-frequency induction heating. A pan-packing method characterized by heating the metal frame to melt the low-melting point glass paste placed on the top and bottom surfaces of the metal frame, thereby sealing the main body and the cap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59079024A JPS60223143A (en) | 1984-04-18 | 1984-04-18 | Packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59079024A JPS60223143A (en) | 1984-04-18 | 1984-04-18 | Packaging method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60223143A true JPS60223143A (en) | 1985-11-07 |
Family
ID=13678369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59079024A Pending JPS60223143A (en) | 1984-04-18 | 1984-04-18 | Packaging method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60223143A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6452311U (en) * | 1987-09-28 | 1989-03-31 | ||
| DE102008050010A1 (en) | 2008-02-27 | 2009-09-10 | Mitsubishi Electric Corp. | Semiconductor device and manufacturing method therefor |
-
1984
- 1984-04-18 JP JP59079024A patent/JPS60223143A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6452311U (en) * | 1987-09-28 | 1989-03-31 | ||
| DE102008050010A1 (en) | 2008-02-27 | 2009-09-10 | Mitsubishi Electric Corp. | Semiconductor device and manufacturing method therefor |
| US8399976B2 (en) | 2008-02-27 | 2013-03-19 | Mitsubishi Electric Corporation | Resin sealed semiconductor device and manufacturing method therefor |
| DE102008050010B4 (en) * | 2008-02-27 | 2014-07-03 | Mitsubishi Electric Corp. | Manufacturing method for a semiconductor device |
| US8785252B2 (en) | 2008-02-27 | 2014-07-22 | Mitsubishi Electric Corporation | Resin sealed semiconductor device and manufacturing method therefor |
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