JPS60221393A - ＧａＡｓ単結晶の製造方法 - Google Patents

ＧａＡｓ単結晶の製造方法

Info

Publication number
JPS60221393A
JPS60221393A JP7656384A JP7656384A JPS60221393A JP S60221393 A JPS60221393 A JP S60221393A JP 7656384 A JP7656384 A JP 7656384A JP 7656384 A JP7656384 A JP 7656384A JP S60221393 A JPS60221393 A JP S60221393A
Authority
JP
Japan
Prior art keywords
light
single crystal
gaas
gaas single
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7656384A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0361637B2 (enExample
Inventor
Junichi Nishizawa
西沢　潤一
Yoshihiro Kokubu
国分　義弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
Shingijutsu Kaihatsu Jigyodan
Original Assignee
Research Development Corp of Japan
Shingijutsu Kaihatsu Jigyodan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Research Development Corp of Japan, Shingijutsu Kaihatsu Jigyodan filed Critical Research Development Corp of Japan
Priority to JP7656384A priority Critical patent/JPS60221393A/ja
Publication of JPS60221393A publication Critical patent/JPS60221393A/ja
Publication of JPH0361637B2 publication Critical patent/JPH0361637B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP7656384A 1984-04-18 1984-04-18 ＧａＡｓ単結晶の製造方法 Granted JPS60221393A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7656384A JPS60221393A (ja) 1984-04-18 1984-04-18 ＧａＡｓ単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7656384A JPS60221393A (ja) 1984-04-18 1984-04-18 ＧａＡｓ単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS60221393A true JPS60221393A (ja) 1985-11-06
JPH0361637B2 JPH0361637B2 (enExample) 1991-09-20

Family

ID=13608707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7656384A Granted JPS60221393A (ja) 1984-04-18 1984-04-18 ＧａＡｓ単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS60221393A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2567545A1 (fr) * 1984-07-16 1986-01-17 Japan Res Dev Corp Procede de fabrication de monocristaux gaas
JPH01239097A (ja) * 1988-03-19 1989-09-25 Sumitomo Electric Ind Ltd 化合物半導体の分子線エピタキシャル成長法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2567545A1 (fr) * 1984-07-16 1986-01-17 Japan Res Dev Corp Procede de fabrication de monocristaux gaas
JPH01239097A (ja) * 1988-03-19 1989-09-25 Sumitomo Electric Ind Ltd 化合物半導体の分子線エピタキシャル成長法

Also Published As

Publication number Publication date
JPH0361637B2 (enExample) 1991-09-20

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Legal Events

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EXPY Cancellation because of completion of term