JPS60221233A - Method of protecting outer surface of semiconductor wafer - Google Patents
Method of protecting outer surface of semiconductor waferInfo
- Publication number
- JPS60221233A JPS60221233A JP7929384A JP7929384A JPS60221233A JP S60221233 A JPS60221233 A JP S60221233A JP 7929384 A JP7929384 A JP 7929384A JP 7929384 A JP7929384 A JP 7929384A JP S60221233 A JPS60221233 A JP S60221233A
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor wafer
- wafer
- circuit
- suction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
- B25B—TOOLS OR BENCH DEVICES NOT OTHERWISE PROVIDED FOR, FOR FASTENING, CONNECTING, DISENGAGING OR HOLDING
- B25B11/00—Work holders not covered by any preceding group in the subclass, e.g. magnetic work holders, vacuum work holders
- B25B11/005—Vacuum work holders
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Jigs For Machine Tools (AREA)
Abstract
Description
【発明の詳細な説明】
+1)B=業上の利用分野
この発明は半導体ウェハを用いる集積回路の製造工程中
における半導体ウェハの表面保護方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION +1) B=Field of Industrial Application This invention relates to a method for protecting the surface of a semiconductor wafer during the manufacturing process of an integrated circuit using the semiconductor wafer.
(2) 従来の技術
集積回路の製造工程中において、半導体ウェハの表面に
トランジスタ、ダイオードなどの回路を構成したのち、
各素子に切断するが、その切断工程の前に第4図のよう
に中抜き円板状のリングフレーム1と、回路3を構成し
た半導体ウェハ2とを粘着フィルム4に貼り付ける作業
が近年多くなってきている。(2) Conventional technology During the manufacturing process of integrated circuits, after configuring circuits such as transistors and diodes on the surface of a semiconductor wafer,
In recent years, many devices have been cut into individual elements, but before the cutting process, as shown in FIG. It has become to.
この作業を行なう場合、裏面を上にしたウェハ2の回路
3の構成側を第3図のように吸着手段Aにより吸着して
固定し、リングフレーム1も吸着手段Bにより吸着して
固足し、これらの裏面に粘着面を下にした粘着フィルム
4を貼着している。When performing this work, the circuit 3 side of the wafer 2 with its back side facing up is suctioned and fixed by the suction means A as shown in FIG. 3, and the ring frame 1 is also suctioned and fixed by the suction means B. An adhesive film 4 with the adhesive side facing down is attached to the back side of these.
前記の吸着手段Aは第3図、第5図のように真空吸引装
置(図示省略)に通じるバイブロの上端に、多孔質のセ
ラミックや焼結金属7を埋め込んた皿状部材8を固定し
、この焼結金、87の表面を吸着面としたもの、或は第
6図のようにバイブロの上端に固定した肉の厚い円板状
部材9の上面にリンク状り縦横の溝10を設け、この溝
10とバイブロを連通孔11により連通させて部材9の
上面を吸着面としたものがある。また、吸着手段Bは筒
状部材12に、真空吸引装置(図示省略)に通しる複数
の連通孔13を設け、その上端を部材12の」1端に開
[]させたものである。その他に図示省略しであるが、
I11空吸引を利用しt−エアーピンセットもある。As shown in FIGS. 3 and 5, the suction means A has a dish-shaped member 8 embedded with porous ceramic or sintered metal 7 fixed to the upper end of a vibro connected to a vacuum suction device (not shown). The surface of this sintered metal 87 is used as an adsorption surface, or as shown in FIG. There is one in which the groove 10 and the vibro are communicated with each other through a communication hole 11, and the upper surface of the member 9 is used as a suction surface. In addition, the suction means B is a cylindrical member 12 provided with a plurality of communication holes 13 that pass through a vacuum suction device (not shown), the upper end of which is opened at one end of the member 12. In addition, although not shown,
There are also t-air tweezers that utilize I11 empty suction.
(3) 発明が解決し。Lう吉する間!:!c−f点上
記のような吸着手段へにおいて、従来ではその吸着面が
直接ウェハ2の回路3に密希するので、ウェハ2の表面
にあるシリコンくずなとのJl、!物、あるいは空気中
の異物かj、l’L結金1.L127の表面や溝10に
溜り、この異物かウ−[ハ2に組着1.て回路3を損傷
させるおそれがあるという間!111′lがある。(3) The invention is solved. L good luck! :! Point c-f When using the above-mentioned suction means, in the past, the suction surface directly leaks into the circuit 3 of the wafer 2, so that the silicon debris on the surface of the wafer 2 is absorbed by Jl,! Objects or foreign objects in the air?J, l'L 1. If foreign matter accumulates on the surface of L127 or the groove 10, it may be difficult to assemble it into U-[C-2]. There is a risk of damaging circuit 3! There is 111'l.
(4) 問題点を解決するための手段
に記の問題点を解決するために、この発明(J、半導体
ウェハの回路形成’+f11を吸着丁一段によって吸着
保持する際に、半29杯ウェハの回路形成面と、吸着手
段との間に多数のrl、を有するプラスチックフィルム
を介在させて、半導体ウェハの回路形成面に直接吸着手
段が触れないようにしたものである。(4) In order to solve the problems described in Means for Solving Problems, the present invention (J. Circuit formation on semiconductor wafers'+f11 is carried out by suction and holding with one stage of suction blades, half of 29 wafers are A plastic film having a large number of rl is interposed between the circuit formation surface and the suction means to prevent the suction means from directly touching the circuit formation surface of the semiconductor wafer.
(5) 作用
この発明は」−記のように吸着手段とウェハの回路構成
面間に多数の孔を有するプラスチックフィルムを介在さ
せて、半導体ウェハの回路構成面をプラスチックフィル
ムを介して吸着する。(5) Function: As described in ``-'', a plastic film having a large number of holes is interposed between the suction means and the circuit-forming surface of the wafer, and the circuit-forming surface of the semiconductor wafer is attracted through the plastic film.
(6) 実施例
第11ツ1の実施例において、皿状部組8の外周面をテ
ーパ状と1−1この部拐8の表面に多孔質プラスチック
フィルム15を被せ、その周縁を部材8の外周にはめた
テーパリング16により押えて固定する。その他は第3
図の場合と同様である。(6) Embodiment 11 In the 1st embodiment, the outer peripheral surface of the dish-shaped part set 8 is tapered. It is held down and fixed by a tapered ring 16 fitted around the outer periphery. Others are 3rd
This is the same as the case shown in the figure.
上記のフィルム15は多孔質であるから、フィルム15
−1r、に半導体ウェハ2を載せて吸着すれはこのウェ
ハ2はフィルム15を介して吸着手段Aに吸着される。Since the above film 15 is porous, the film 15
-1r, and the wafer 2 is suctioned by the suction means A through the film 15.
フィルム15の交換時にはテーパリング16を引き上げ
ることによりフィルム15を簡単に外シて新しいフィル
ムと交換できる。When replacing the film 15, the film 15 can be easily removed by pulling up the taper ring 16 and replaced with a new film.
第2図の場合は多孔物フィルム1°rはテープ状となっ
ていて巻軸18にロール状に巻いてあり、吸着手段A、
13上を通って巻取軸19に巻取らせるようになってい
る。In the case of FIG. 2, the porous film 1°r is in the form of a tape and is wound around the winding shaft 18 in the form of a roll.
13 and is wound onto a winding shaft 19.
この場合は半’+9休ウェハ2の1回の吸着角、あるい
は複数回の吸着f+jにフイシン・17を巻取って新し
いフイシン、17が吸j1手段A1−にくるようにする
。In this case, the filament 17 is wound up at one suction angle of the half'+9 suspended wafer 2 or a plurality of suction f+j so that a new filament 17 comes to the suction j1 means A1-.
なお、−,111M己のフィルム15r 17 iまり
ングフレーム1とウェハ2を貼伺けるための粘着フィル
ム4に接触するのでシリコン塗布などの非粘着処理を施
したものか、四弗化エチレン系フィルムが望才しい。In addition, since the film 15r 17i comes in contact with the adhesive film 4 for attaching the wafer 2 to the marring frame 1, it must have been treated with non-adhesive treatment such as silicone coating, or it must have been treated with a tetrafluoroethylene film. is promising.
また、フィルム15.17の孔(J1μInの大きさか
ら数宣旧nまての範囲で許容されるが、答礼(j独立し
ていることが望ましい。In addition, the holes in the film 15 and 17 (J1μIn in size to a few centimeters in size are acceptable, but it is preferable that they be independent).
(7) 効果
この発明は」二記のように吸着手段とウエノ1の回路構
成面間に多数の孔を有するプラスチックフィルムを介在
させたから半導体ウエノ\の回路構成面に直接吸着手段
が触れることかない。(7) Effects In this invention, as described in section 2, a plastic film having a large number of holes is interposed between the suction means and the circuit-forming surface of the semiconductor wafer 1, so that the suction means does not come into direct contact with the circuit-forming surface of the semiconductor wafer. .
従ってこのプラスチックフィルムをfrr回あるいは複
数回fO′に新しいフィルムと交換することにより吸着
手段の吸着面は常に清潔に保たれるから、異物による回
路面の損傷のおそれがなくなりウェハの表面に構成され
ている複雑微細な回路の損傷を防止することができる。Therefore, by replacing this plastic film with a new film frr times or multiple times fO', the suction surface of the suction means is always kept clean, eliminating the risk of damage to the circuit surface caused by foreign matter and eliminating the possibility of damage to the circuit surface formed on the surface of the wafer. It can prevent damage to complex minute circuits.
第1図、fA+J2図はこの発明方法の各実施例を示す
縦断正面図、第3図は従来のウエノ\吸着方法の一例を
示す縦断正面図、第4図はリングフレームとウェハの貼
り合せ状態を示す斜視図、第5図、$6図は吸着手段の
各側を示す斜視図である。
1・・・リングフレーム、2・・・半導体ウエノ\、3
・・・回路、15.17・・・多孔質プラスチックフィ
ルム、A・・・吸着手段。
特許出願人 日東電気工業株式会社
同 代理人 鎌 1)文 二Fig. 1 and fA+J2 are longitudinal sectional front views showing each embodiment of the method of this invention, Fig. 3 is a longitudinal sectional front view showing an example of the conventional wafer adsorption method, and Fig. 4 is a state in which the ring frame and wafer are bonded together. Figures 5 and 6 are perspective views showing each side of the suction means. 1...Ring frame, 2...Semiconductor ueno\, 3
...Circuit, 15.17...Porous plastic film, A...Adsorption means. Patent applicant: Nitto Electric Industry Co., Ltd. Agent: Kama 1) Bun 2
Claims (1)
おいて、その回路形成面を吸着手段によって吸着保護す
る際に、半導体ウェハの回路形成面と、吸着手段との間
に多数の孔を有するプラスチックフィルムを介在させて
、半導体ウェハの回路形成面に直接吸着手段か触れない
ようにすることを特徴とする半導体ウェハの表面保護方
法。A plastic film having a large number of holes between the circuit-forming surface of the semiconductor wafer and the suction means when the circuit-forming surface is suction-protected by suction means in the manufacturing process after circuits are formed on the surface of the semiconductor wafer. 1. A method for protecting the surface of a semiconductor wafer, characterized in that a suction means does not directly touch the circuit-forming surface of the semiconductor wafer by interposing the above.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7929384A JPS60221233A (en) | 1984-04-16 | 1984-04-16 | Method of protecting outer surface of semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7929384A JPS60221233A (en) | 1984-04-16 | 1984-04-16 | Method of protecting outer surface of semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS60221233A true JPS60221233A (en) | 1985-11-05 |
Family
ID=13685799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7929384A Pending JPS60221233A (en) | 1984-04-16 | 1984-04-16 | Method of protecting outer surface of semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60221233A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63312036A (en) * | 1987-06-11 | 1988-12-20 | Nabeya:Kk | Adsorptively holding method |
CN104924234A (en) * | 2015-04-30 | 2015-09-23 | 东南大学 | Adjustable fixture used for wet etching anisotropic velocity test of hemispheric test piece |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58180026A (en) * | 1982-04-15 | 1983-10-21 | Nippon Telegr & Teleph Corp <Ntt> | Attracting board for grinding wafer |
-
1984
- 1984-04-16 JP JP7929384A patent/JPS60221233A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58180026A (en) * | 1982-04-15 | 1983-10-21 | Nippon Telegr & Teleph Corp <Ntt> | Attracting board for grinding wafer |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63312036A (en) * | 1987-06-11 | 1988-12-20 | Nabeya:Kk | Adsorptively holding method |
CN104924234A (en) * | 2015-04-30 | 2015-09-23 | 东南大学 | Adjustable fixture used for wet etching anisotropic velocity test of hemispheric test piece |
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