JPS58180026A - Attracting board for grinding wafer - Google Patents

Attracting board for grinding wafer

Info

Publication number
JPS58180026A
JPS58180026A JP6182082A JP6182082A JPS58180026A JP S58180026 A JPS58180026 A JP S58180026A JP 6182082 A JP6182082 A JP 6182082A JP 6182082 A JP6182082 A JP 6182082A JP S58180026 A JPS58180026 A JP S58180026A
Authority
JP
Japan
Prior art keywords
wafer
elastic body
attracting board
suction
board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6182082A
Other languages
Japanese (ja)
Other versions
JPS634937B2 (en
Inventor
Junji Watanabe
純二 渡辺
Toshiro Karaki
俊郎 唐木
Kenkichi Tsuruta
鶴田 兼吉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6182082A priority Critical patent/JPS58180026A/en
Publication of JPS58180026A publication Critical patent/JPS58180026A/en
Publication of JPS634937B2 publication Critical patent/JPS634937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Jigs For Machine Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To stick the outer circumference of the wafer fast and hold it and prevent the intrusion of a grinding liquid, and to improve the accuracy of the wafer ground by arranging a rubbery elastic body around a thick board. CONSTITUTION:A rubbery elastic body 10 is disposed while tightly surrounding the outer circumference of the attracting board 6 arranged onto a base plate 3, the leakage of air from the side surface of the attracting board 6 is prevented and the outer circumference of the wafer 5 is fast stuck, but the wafer 5 is not fast stuck, and is projected previously only by height d from the surface of the attracting board 6 under the state in which grinding pressure is not applied. With the attracting board 6, a plurality of extremely thin grooves 61 are notched to the surface while it can be sucked under vacuum by large holes 8 for suction communicating at the bottom, and a diameter on the surface side is made slightly smaller than that of the wafer 5. When a vacuum system switch is turned ON under the state, the back of the wafer 5 is fast stuck onto the surface of the attracting board 6, but the outer circumferential section is projected slightly, and the surface of the rubbery elastic body 10 of the outer circumference of the wafer 5 is deformed, the upper surface is made the same plane as the surface of the attracting board 6 and the wafer 5 is ground flatly when a grinding disk is fast stuck to the wafer 5 and grinding pressure is applied.

Description

【発明の詳細な説明】 本発明はウェハ研磨においてウェハ着脱が容易でしかも
研磨されたウェハ精度を保証できるウェハ研磨用吸着&
KIIする。
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a wafer polishing suction &
KII.

ウェハの製造に当っては、II!雨破壊層を削り欠陥の
ない単結晶面を得るべくラツピングやポリッシングなど
の表面処理工程が存在する。この工程においてウェハを
研磨する場合、ウェハを吸着板上に載置・固定するので
あるが、従来の吸着板としてはI−ラスセラミックスを
使ったもの、厚板に細孔をあけたもの、I!面に掬脂膜
をコーティングしたものなどが用いられていた。第1図
はI−ラスセラミックスを基本にしたもので、ポーラス
セラミックス1は吸引孔2を有する載置台3上に載せら
れ、このポーラスセラミックス1の外周には吸引孔を閉
じるための硬質樹脂4が配置されている。この硬質樹脂
4Fiポーラスセラミツクスlと加工性を合わせるため
硬脆微粉末などが充填されている。I−ラスセラミック
スlの表面を研削又はラッグするとき、硬質樹脂との表
面もI−ラスセラミックスXOH面と同様凹凸なく形成
される。しかし、硬質樹脂やポーラスセラミックス1の
表面状態などによりI−ラスセラミックス1上にて吸着
されたウェハ50外周部から研磨液が浸入し、化学源を
使った4リツシンダの場合に#′i浸入液によりウェハ
5の裏面を腐食し微小な凹凸が発生しえり外観上値れな
いウェハ5となってしまう欠点がある。また、I−ラス
セラオツクスl−c#i裏面を研削又はラクダ仕上げし
良場合にも10 fig以上の表Wiあらさや凹凸があ
り載置台3の研削された金属表向となじみが島く、完全
に密着できないのでI−ラスセラミックスlと載置台3
との表面間には微小な隙間が発生しウェハ5の加工精度
を低下させるという欠点があった。
When manufacturing wafers, II! Surface treatment processes such as wrapping and polishing exist to remove the rain-destroyed layer and obtain a defect-free single crystal surface. When polishing a wafer in this process, the wafer is placed and fixed on a suction plate. Conventional suction plates include those using I-glass ceramics, thick plates with holes drilled in them, and I-glass plates. ! Those whose surfaces were coated with a layer of oil were used. Fig. 1 is based on I-lase ceramics, in which a porous ceramic 1 is placed on a mounting table 3 having suction holes 2, and a hard resin 4 is placed around the outer periphery of the porous ceramics 1 to close the suction holes. It is located. In order to match the workability with this hard resin 4Fi porous ceramic l, it is filled with hard and brittle powder. When grinding or rugging the surface of the I-las ceramics I, the surface with the hard resin is also formed without unevenness, similar to the I-las ceramics XOH surface. However, due to the hard resin and the surface condition of the porous ceramics 1, the polishing liquid infiltrates from the outer periphery of the wafer 50 adsorbed on the I-las ceramics 1, and in the case of 4 lithinda using a chemical source, #'i infiltrated liquid This has the disadvantage that the back surface of the wafer 5 is corroded and minute irregularities are generated, resulting in a wafer 5 that is unsatisfactory in appearance. In addition, even if the back surface of I-Lasseroxelox l-c#i is ground or camel-finished, it may have roughness or unevenness of 10 figs or more, making it difficult to match with the ground metal surface of the mounting table 3, and it may not be completely finished. Since it cannot be attached closely, I-Las ceramics l and mounting table 3
There was a drawback that a minute gap was generated between the surfaces of the wafer 5 and the processing accuracy of the wafer 5 was reduced.

第2図Fi載置台3上に金属吸着板6を配置しこの金属
吸着板6内Ka引用細孔7および吸引用太孔8を設けた
例を示している。かかる例においては、金属吸着板6の
!!!向に現われる吸引用細孔7をウェハ5の外周端ま
で形成できないため、研磨時ウェハ5の外周が密着せず
研磨液が浸入したり研磨ウェハの精度が低下するという
欠点があった。
FIG. 2 shows an example in which a metal suction plate 6 is placed on the Fi mounting table 3, and a Ka quota pore 7 and a large suction hole 8 are provided in the metal suction plate 6. In such an example, the metal suction plate 6! ! ! Since the suction pores 7 that appear in the opposite direction cannot be formed all the way to the outer peripheral edge of the wafer 5, the outer periphery of the wafer 5 does not come into close contact with the wafer 5 during polishing, resulting in a disadvantage that the polishing liquid may enter and the precision of the polished wafer is reduced.

また、第3図は第2図に示す金属吸着板60表面に機脂
膜9を被覆したものであり、ウェハ5との重着性を向上
させウェハ5の裏面への研磨液5浸入を防止した例であ
る。しかし、加工上樹脂膜9の均一な膜厚を得るのが困
難であるため、ウェハ5の加工N度特に平行度が低い欠
点がある。
In addition, FIG. 3 shows a model in which the surface of the metal suction plate 60 shown in FIG. 2 is coated with a resin film 9, which improves the adhesion to the wafer 5 and prevents the polishing liquid 5 from penetrating into the back surface of the wafer 5. This is an example. However, since it is difficult to obtain a uniform thickness of the resin film 9 during processing, there is a drawback that the processing N degree of the wafer 5, particularly the parallelism, is low.

そこで、本発明は上述の欠点に鑑み、研磨液の浸入を防
止すると同時に加工精度を向上させるようにしたウェハ
研磨用吸着板の提供を目的とする。
SUMMARY OF THE INVENTION In view of the above-mentioned drawbacks, the present invention aims to provide a suction plate for wafer polishing which prevents the infiltration of polishing liquid and at the same time improves processing accuracy.

かかる目的を達成するため本発明としては、被加工ウェ
ハの外形寸法よねわずかに小さな外形寸法を廟する厚板
の表面に複数の細擲又#i細孔を刻設し、この細溝又社
細孔の底部と連通する吸引用孔を上記厚板の裏面より穿
つ一方、上記厚板の全外周にゴム状弾性体を密着して囲
繞し、このゴム状(弾性体を上記厚板の表面より微少寸
法突出させたことを%黴とする。
In order to achieve this object, the present invention involves carving a plurality of narrow grooves or #i pores on the surface of a thick plate having an outer dimension slightly smaller than that of the wafer to be processed. Suction holes that communicate with the bottoms of the pores are bored from the back side of the thick plate, while a rubber-like elastic body is tightly surrounded on the entire outer periphery of the thick plate, and this rubber-like (elastic body is attached to the surface of the thick plate). % mold is defined as having a more minute dimension protrude.

第4iは本発明によるウェハ研磨用吸着板の実施例で、
第1図〜ji311と同一部分は同符号を付す。載置台
3上に配置されたg&着板6の外周を密に囲繞してゴム
状弾性体10が配置されている。このゴム状弾性体1G
は散着板1ii1面の空気漏れ止めとウェハ5の外周密
着。ために存在する。また、このゴム状弾性体1υはウ
ェハ5を密着させず研磨圧力をかけない状態で吸着板6
0表面よりわずかに高さdだけ突出しているものである
No. 4i is an example of a suction plate for wafer polishing according to the present invention,
The same parts as in FIGS. 1 to ji311 are given the same reference numerals. A rubber-like elastic body 10 is arranged so as to closely surround the outer periphery of the g & mounting plate 6 placed on the mounting table 3. This rubber-like elastic body 1G
is to prevent air leakage on one side of the scattering plate 1ii and to tightly fit the outer periphery of the wafer 5. exists for the sake of In addition, this rubber-like elastic body 1υ is attached to the suction plate 1 in a state where the wafer 5 is not brought into close contact with the suction plate 1υ and no polishing pressure is applied.
It protrudes slightly from the 0 surface by a height d.

吸着板6自体K IdそのI!ilK複数本の極細溝6
1が刻設されると共にこの極細溝61の底の連通する吸
引用太孔8が設けられ真空吸引を可能としている1、吸
着板6のrje面1面直1面径加工ウェハ5の直径より
わず−1PK小さく、したがってウェハ5は配置された
状態で#jk看板6を榎いtム状弾性体10の内jIi
1部に係ることになる。
Adsorption plate 6 itself K Id its I! ilK multiple ultra-fine grooves 6
1 is engraved and a large suction hole 8 communicating with the bottom of this ultra-thin groove 61 is provided to enable vacuum suction. The wafer 5 is only -1 PK smaller, so the #jk signboard 6 is removed from the #jk signboard 6 while the wafer 5 is placed.
This will be related to part 1.

ウェハ5を吸着板6上に載せ真空系スイッチを入れると
ウェハ5の裏面は教ti板60表崗に密着されるが、ウ
ェハ5の外周5t−tゎずかKそり出している。ついで
、研磨盤をウェハ5に密着させて研磨圧力を加えると、
ウェハ5の外周のゴム状弾性体10のamが変形してゴ
ム状弾性体lOの上面は吸着板6の表面と同一平面にな
りウェハ5は平面に研磨される。
When the wafer 5 is placed on the suction plate 6 and the vacuum system switch is turned on, the back side of the wafer 5 is brought into close contact with the front surface of the Ti plate 60, but the outer circumference of the wafer 5 is warped by 5t-t. Next, when the polishing disk is brought into close contact with the wafer 5 and polishing pressure is applied,
The am of the rubber-like elastic body 10 on the outer periphery of the wafer 5 is deformed so that the upper surface of the rubber-like elastic body 10 becomes flush with the surface of the suction plate 6, and the wafer 5 is polished into a flat surface.

次KA#例を示す。吸着板6の材質としてステンレスを
用−576φ■クエハ5に対して吸着板6の直径を72
謹φにする。表面K @ 0.2■、深さ1冒の細溝6
1を一方向に12本人れ、外周にはゴム状弾性体10と
してウレタンゴムリンダを接着する。吸着板6を1転さ
せながら吸着板6をストレート砥石(WAす100)で
ウレタンゴム及びステンレスを同時K11f削すると研
削終了後ウレタンゴム部はステンレス級着板面に対して
3〜5μ講突き出していた。この上にウェハ5を載せ、
70■慶以上で吸引させるとウェハ5の外周部3■にお
ける央出高さ社2〜3声mであった。このように吸着さ
せたウェハ5を研磨すると外周縁2■を除いたウェハ5
の平行度Fi2μm以下であシ、外周端部の厚さ変動も
中央内部に対して111vt以下であった。
The following KA# example is shown below. Use stainless steel as the material of the suction plate 6 - 576φ ■ The diameter of the suction plate 6 is 72mm for the Kuha 5
I'll be respectful. Surface K @ 0.2■, depth 1 inch thin groove 6
1 are placed in one direction, and a urethane rubber cylinder is glued to the outer periphery as a rubber-like elastic body 10. When the suction plate 6 is rotated once while grinding the urethane rubber and stainless steel at the same time with a straight grindstone (WA S100), the urethane rubber part protrudes 3 to 5 μm from the surface of the stainless steel grade plate after grinding. Ta. Place wafer 5 on top of this,
When the suction was carried out at a pressure of 70 mm or more, the height of the central part of the outer circumferential portion 3 of the wafer 5 was 2 to 3 m. When the wafer 5 attracted in this way is polished, the wafer 5 excluding the outer peripheral edge 2
The parallelism Fi was less than 2 μm, and the variation in thickness at the outer peripheral edge was less than 111vt with respect to the inside of the center.

またウェハ5(D@面への研磨液の浸入もみられなかっ
た。この場合、ウレタンゴムとしてゴム硬度55〜10
0の範囲の各種リングについて同様に検討したところ、
軟質のもの#1ど突出高さが高くなる傾向にあって、各
極リンダの突出高さは40〜2声窺の範囲にあった、そ
れぞれに吸着させたウェハ5を研磨したところ、上記具
体例と同様の効果が得られた。
In addition, no infiltration of the polishing liquid into the wafer 5 (D@ surface) was observed. In this case, the urethane rubber had a rubber hardness of 55 to 10.
When we similarly considered various rings in the range of 0, we found that
The protrusion height of the soft type #1 tends to be higher, and the protrusion height of each pole cylinder was in the range of 40 to 2 tones.When the wafer 5 attached to each pole was polished, the above concrete The same effect as in the example was obtained.

さらに、上記具体例において、吸着(ステンレ′ス)板
6上の細溝61を除く吸着面部分に外周に設けるウレタ
ンゴムよりも硬いグラスチックであるテフロン、ナイロ
ン、嘱ヒ扁等dいは高硬度のポリウレタンをコートした
後、同様に吸着面側を研削しコートしたグラスチックの
厚さ約101*声調〜数10 J!It K したとこ
ろ外周に配置されたウレタンゴムの突出高さは前記具体
例の場合の3〜5割減となつ九。これを用いて、吸着さ
せたウェハ5を研磨すると外周zIIIIIを除いたウ
ェハの平行度鉱l〜2声寓程度で、外周端部の厚さ変動
も中央内部に対して1μ、以下であり、もちろんウェハ
5の裏面への研磨液の浸入もみられず、前記具体例と同
様の効果が得られた。その上、研磨中の吸着力社増大し
、かつウェハ5の裏Wi(吸着1i1i@)には全くキ
ズがつかなかった。
Furthermore, in the above specific example, the suction surface portion other than the narrow groove 61 on the suction (stainless steel) plate 6 is provided on the outer periphery with a glass material such as Teflon, nylon, or high-grade plastic material that is harder than urethane rubber. After coating with hard polyurethane, the suction surface side was ground and coated in the same way, and the thickness of the glass stick was approximately 101 * tone ~ several 10 J! As a result, the protruding height of the urethane rubber disposed on the outer periphery was reduced by 30 to 50% compared to the specific example described above. When the adsorbed wafer 5 is polished using this, the parallelism of the wafer excluding the outer periphery zIII is about 1 to 2 degrees, and the thickness variation at the outer periphery edge is 1 μ or less compared to the inside of the center. Of course, no penetration of the polishing liquid into the back surface of the wafer 5 was observed, and the same effect as in the above-mentioned example was obtained. Moreover, the suction force during polishing increased, and the back side Wi (suction 1i1i@) of the wafer 5 was not scratched at all.

上記実施例においては、吸着板6および細溝61を適用
した場合を説明したのであるが、この細溝61の代りに
複数の細孔を設けても良く、また吸着板6として従来技
術にて説明し*/−ラスセラミックスの適用も可能とな
る。
In the above embodiment, the case where the suction plate 6 and the narrow groove 61 are applied has been explained, but a plurality of fine holes may be provided instead of the thin groove 61. It also becomes possible to apply glass ceramics.

以上説明したように本発明によれば、厚板のまわりにゴ
ム状弾性体を配置したことによりウェハの外周は密着保
持されて保持が安定となり研磨液の浸入は防止でき、研
磨ウェハ精度を向上できる。特に吸着板をステンレスに
て作る場合、平行平板に研削でき平面度、平行度ともに
1μm以下に加工でき、結果としてウェハの平面度、平
行度もすぐれる。
As explained above, according to the present invention, by arranging the rubber-like elastic body around the thick plate, the outer periphery of the wafer is held tightly and stably held, preventing infiltration of polishing liquid, and improving the precision of polished wafers. can. In particular, when the suction plate is made of stainless steel, it can be ground into a parallel flat plate with both flatness and parallelism of 1 μm or less, resulting in excellent flatness and parallelism of the wafer.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図ないし第3図は従来のウエノ・研磨用吸着板の三
つの例をそれぞれ示し、第1ai2はI−ラスセラミッ
クスを用い、第2図は金属吸着板を用い、第3図は樹脂
膜を用いた例を示す構成図、jiE4図は本発F!AK
よるウェハ研磨用吸着板の一実施例の一部切欠き斜視図
である。 図面中、 5はウェハ、 6は吸着板、 10はゴム状弾性体、 61U細溝である。 特許出願人 日本電信電話公社 代理人 弁理士 光 石 士 部 (他1名) 第1図 第2図
Figures 1 to 3 show three examples of conventional suction plates for polishing. 1ai2 uses I-las ceramics, Figure 2 uses a metal suction plate, and Figure 3 uses a resin film. The configuration diagram showing an example using jiE4 diagram is the original F! A.K.
1 is a partially cutaway perspective view of an embodiment of a suction plate for wafer polishing according to the present invention. In the drawings, 5 is a wafer, 6 is a suction plate, 10 is a rubber-like elastic body, and 61U thin grooves. Patent applicant Nippon Telegraph and Telephone Public Corporation Patent attorney Shibu Mitsuishi (and 1 other person) Figure 1 Figure 2

Claims (2)

【特許請求の範囲】[Claims] (1)  被加工ウェハの外形寸法よりわずかに小さな
外形寸法を有する厚板の表内に複数のJII溝又は細孔
を刻設し、との細溝又は細孔の底部と連通する吸引用孔
を上記厚板のamより穿つ一方、上記厚板の全外周にコ
°ム状弾性体を密着して囲繞し、このプム状弾性体を上
記厚板の表面より微少寸法央出させたことを%像とする
ウェハ研磨用吸着板。
(1) A plurality of JII grooves or pores are carved in the front surface of a thick plate having external dimensions slightly smaller than the external dimensions of the wafer to be processed, and suction holes communicate with the bottoms of the narrow grooves or pores. is drilled from the am of the thick plate, while a comb-shaped elastic body is closely surrounded on the entire outer periphery of the thick plate, and this pom-shaped elastic body is made to protrude from the surface of the thick plate by a minute dimension at the center. Adsorption plate for wafer polishing.
(2)金属の上記厚板の表面で上記細溝又は細孔以外の
EiIK上記ゴム状弾性体より硬くシかも極薄のグラス
チックをコートした特許請求の範囲第1項記載のウェハ
研磨用吸着板。
(2) The suction for wafer polishing according to claim 1, wherein the surface of the thick metal plate is coated with an extremely thin glass material that is harder than the rubber-like elastic body of EiIK other than the narrow grooves or pores. Board.
JP6182082A 1982-04-15 1982-04-15 Attracting board for grinding wafer Granted JPS58180026A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6182082A JPS58180026A (en) 1982-04-15 1982-04-15 Attracting board for grinding wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6182082A JPS58180026A (en) 1982-04-15 1982-04-15 Attracting board for grinding wafer

Publications (2)

Publication Number Publication Date
JPS58180026A true JPS58180026A (en) 1983-10-21
JPS634937B2 JPS634937B2 (en) 1988-02-01

Family

ID=13182097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6182082A Granted JPS58180026A (en) 1982-04-15 1982-04-15 Attracting board for grinding wafer

Country Status (1)

Country Link
JP (1) JPS58180026A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60221233A (en) * 1984-04-16 1985-11-05 Nitto Electric Ind Co Ltd Method of protecting outer surface of semiconductor wafer
US4597228A (en) * 1983-12-19 1986-07-01 Citizen Watch Co., Ltd. Vacuum suction device
JPS61182738A (en) * 1985-02-07 1986-08-15 Shibayama Kikai Kk Free size chucking mechanism for wafer
US6399498B1 (en) 1998-02-05 2002-06-04 Shin-Etsu Handotai Co., Ltd. Method and apparatus for polishing work
CN102962735A (en) * 2012-11-30 2013-03-13 烟台鑫海矿山机械有限公司 Rubber plate polishing device
JP2015037137A (en) * 2013-08-14 2015-02-23 株式会社ディスコ Chuck table

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55149949A (en) * 1979-05-14 1980-11-21 Fuji Electric Co Ltd Separation of selenium material from selenium photoreceptor
JPS56153741A (en) * 1980-04-30 1981-11-27 Toshiba Corp Supporting device for semiconductor wafer
JPS5934142U (en) * 1982-08-27 1984-03-02 株式会社オ−デイオテクニカ vibration absorber

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55149949A (en) * 1979-05-14 1980-11-21 Fuji Electric Co Ltd Separation of selenium material from selenium photoreceptor
JPS56153741A (en) * 1980-04-30 1981-11-27 Toshiba Corp Supporting device for semiconductor wafer
JPS5934142U (en) * 1982-08-27 1984-03-02 株式会社オ−デイオテクニカ vibration absorber

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4597228A (en) * 1983-12-19 1986-07-01 Citizen Watch Co., Ltd. Vacuum suction device
JPS60221233A (en) * 1984-04-16 1985-11-05 Nitto Electric Ind Co Ltd Method of protecting outer surface of semiconductor wafer
JPS61182738A (en) * 1985-02-07 1986-08-15 Shibayama Kikai Kk Free size chucking mechanism for wafer
JPH0246331B2 (en) * 1985-02-07 1990-10-15 Shibayama Kikai Kk
US6399498B1 (en) 1998-02-05 2002-06-04 Shin-Etsu Handotai Co., Ltd. Method and apparatus for polishing work
CN102962735A (en) * 2012-11-30 2013-03-13 烟台鑫海矿山机械有限公司 Rubber plate polishing device
JP2015037137A (en) * 2013-08-14 2015-02-23 株式会社ディスコ Chuck table

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