JPS60220968A - 固体撮像装置 - Google Patents

固体撮像装置

Info

Publication number
JPS60220968A
JPS60220968A JP60042641A JP4264185A JPS60220968A JP S60220968 A JPS60220968 A JP S60220968A JP 60042641 A JP60042641 A JP 60042641A JP 4264185 A JP4264185 A JP 4264185A JP S60220968 A JPS60220968 A JP S60220968A
Authority
JP
Japan
Prior art keywords
diffusion layer
impurity diffusion
type impurity
solid
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60042641A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0228271B2 (https=
Inventor
Haruhisa Ando
安藤　治久
Kayao Takemoto
一八男 竹本
Shinya Oba
大場　信弥
Masakazu Aoki
正和 青木
Masaaki Nakai
中井　正章
Toshibumi Ozaki
俊文 尾崎
Mutsuo Nagata
永田　睦男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60042641A priority Critical patent/JPS60220968A/ja
Publication of JPS60220968A publication Critical patent/JPS60220968A/ja
Publication of JPH0228271B2 publication Critical patent/JPH0228271B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP60042641A 1985-03-06 1985-03-06 固体撮像装置 Granted JPS60220968A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60042641A JPS60220968A (ja) 1985-03-06 1985-03-06 固体撮像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60042641A JPS60220968A (ja) 1985-03-06 1985-03-06 固体撮像装置

Publications (2)

Publication Number Publication Date
JPS60220968A true JPS60220968A (ja) 1985-11-05
JPH0228271B2 JPH0228271B2 (https=) 1990-06-22

Family

ID=12641637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60042641A Granted JPS60220968A (ja) 1985-03-06 1985-03-06 固体撮像装置

Country Status (1)

Country Link
JP (1) JPS60220968A (https=)

Also Published As

Publication number Publication date
JPH0228271B2 (https=) 1990-06-22

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