JPS60220355A - Photoreceptive member - Google Patents

Abstract

PURPOSE:To obtain a novel photoreceptive member having sensitivity to light by making the germanium atoms in the 1st layer into such condition in which said atoms are nonuniformly distributed into the layer thickness direction and arranging many non-parallel boundaries in at least one direction within the plane perpendicular to the layer thickness direction. CONSTITUTION:The germanium atoms incorporated into the 1st layer (G)1002 are distributed into such condition that said atoms are continuous in the layer thickness direction and are distributed more on the base 1001 side as compared to the surface 1005 side. The germanium atoms are distributed uniformly into the in-plane direction parallel with the surface of the base. The germanium atoms are not incorporated into the 2nd layer (S) provided on the 1st layer (G). The layer thicknesses of the 1st layer (G) and the 2nd layer (S) are one of effective factors and therefore the sum (TB+T) of the thickness TB of the 1st layer (G) and the thickness T of the 2nd layer (S) is determined from the org. relevancy between the characteristic required for both layer regions and the characteristic required for the entire part of the photoreceptive layer.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
The present invention relates to a light-receiving member sensitive to electromagnetic waves such as infrared rays, X-rays, R-rays, etc. More specifically, the present invention relates to a light-receiving member suitable for using coherent light emitted from a laser beam.

[Prior art]

As a method of recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam that changes according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing depending on the image. Among these, in image forming methods using electrophotography, image recording is generally performed in a shed using an inexpensive He-Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm). be.

In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A No. 54-86341 and JP-A-Sho 56-
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as "A-8iJ") disclosed in Japanese Patent No. 83746 is attracting attention.

Hyakunen et al. suggested that if the photoreceptive layer is a single-layer A-S i layer, hydrogen atoms and halogen In order to realize the need to structurally contain atoms or boron atoms in addition to these atoms in a controlled manner in the layer within a given imaginary range, it is necessary to closely control layer formation. However, there are city limits on tolerances in the design of light receiving members.

For example, Japanese Patent Laid-Open No. 54-121743 is an example of a device that can expand this design tolerance and still make effective use of the light sensitivity even if the dark resistance is low to some extent.
No. Publication, JP-A No. N57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer has a layer structure of two or more layers having different conductivity characteristics to form a depletion l- inside the photoreceptive layer, or as described in JP-A-57-5
No. 2178, No. 52179, No. 52180, No. 58
As described in the publications No. 159, No. 58160, and No. 58161, a multilayer structure may be provided in which a barrier layer is provided between the support and the photoreceptor, and/or on the upper surface of the photoreceptor. Accordingly, a light-receiving member has been proposed in which the above-mentioned dark resistance is improved.

Through such proposals, A-8i optical sensor members have made great progress in terms of commercialization design tolerances, ease of manufacturing management, and productivity, and have become commercially viable. The speed of development towards this is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser source irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. In particular, when forming an image with high gradation in the middle six circles, the image becomes noticeably unsightly.

Furthermore, as the wavelength region of the semiconductor laser light used becomes longer, the absorption of the laser light in the photoreceptive layer decreases, so the above-mentioned interference phenomenon is remarkable.

This point will be explained with reference to the drawings.

In FIG. 1, light (2) incident on a certain layer constituting the light-receiving layer of a light-receiving member is shown. and the reflected light □ reflected at the upper interface 102
, shows reflected light R3 reflected at the lower interface 101.

The average layer thickness of the layer is d1, the refractive force is n1, and the likely wavelength is A,
The thickness of a certain layer is gradual. If the layer thickness is non-uniform with a difference of -n or more, the reflected light I R2 becomes 2nd-mλ (m is an integer, the reflected lights strengthen each other) and 2nd-(m+-!-)
The amount of absorbed light and the amount of transmitted light of a certain layer change depending on which of the following conditions (m is an integer and reflected light weakens each other) is met.

In a light-receiving member with a multilayer structure, the interference effect shown in Fig. 1 occurs in each layer, and as shown in Fig. 2, a synergistic negative effect due to each interference occurs. Therefore, interference fringes corresponding to the interference fringe pattern occur. appears in one visible image transferred and fixed on the transfer member, causing a defective image.

A method for solving this problem is to diamond-cut the surface of the support and provide unevenness of ±500 to ±10,000 i to form a light-scattering surface (for example, Japanese Patent Application Laid-Open No. 115
No. 8-162975) The surface of the aluminum support is treated with black alumite, or carbon or carbon is added to the resin.
A method of providing a light absorbing layer by dispersing colored pigments or dyes (for example, Japanese Patent Application Laid-open No. 57-165845), applying a satin-like alumite treatment to the surface of an aluminum support, or sandblasting to create fine grain-like irregularities. A method has been proposed in which a light scattering and antireflection layer is provided on the surface of a support (for example, JP-A-57-16554@).

Hyakken et al. were unable to completely eliminate the interference fringe pattern that appears on images using these conventional methods.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still remains, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment dispersed resin layer is provided, when forming the A-84 layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed light-receiving layer is significantly deteriorated. -8i
/- It has disadvantages such as being damaged by the plasma during formation, reducing its original absorption function, and also adversely affecting the subsequent formation of the A-8t layer due to deterioration of the surface condition. .

In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. 3, for example, a part of the incident light I0 is reflected on the surface of the light-receiving layer 302 to become reflected light R□, The rest,
The light enters the inside of the light-receiving layer 302 and becomes transmitted light I□. The amount of transmitted light is such that on the surface of the support 302, a part of it is scattered and becomes diffused light.
The rest is specularly reflected and becomes a reflected light beam 2, and a part of it becomes an emitted light R3 and goes outside. Therefore, since the outgoing light beam, which is a component that interferes with the reflected light R1, remains, the interference fringe pattern still cannot be completely erased.

In addition, if the diffusivity of the surface of the support 301 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the light will be diffused within the light-receiving layer and cause halide, which will reduce the resolution. It also had the disadvantage of decreasing.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
Reflected light R2 at the bottom of layer 402 Reflected light R0 at the second layer
, the specularly reflected light R3 on the surface of the support 401 interferes with each other,
An interference fringe pattern occurs depending on the thickness of each layer of the light-receiving member.

Therefore, in a light-receiving member having a multilayer structure, the support 40
It has been impossible to completely prevent interference fringes by irregularly roughening the surface.

In addition, when the narrow surface of the support is irregularly roughened by a method such as sand blasting, the roughness varies widely between lots, and even within the same lot, the roughness is uneven. As a result, there was a problem with manufacturing control. In addition, relatively large protrusions often form randomly, and such large protrusions cause local breakdown of the photoreceptive layer.

Furthermore, if the support narrow surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface of the unevenness of the light-receiving layer 502 becomes parallel to the sloped surface of the unevenness of the light-receiving layer 502.

Therefore, in that part, the incident light is 2 n d 1-m
J or 2nd □-(m+1/2)J is established and becomes a bright area or a dark area, respectively. In addition, in the entire photoreceptive layer, the layer thickness of the photoreceptive layer is d1. Since there is non-uniformity in the layer thickness such that the maximum of the differences between d, , c+31d4 is 2n or more, a bright and dark striped pattern appears.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light from the narrow surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a single-layered light-receiving member.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for painting using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that has excellent mechanical durability, particularly abrasion resistance, and light-receiving properties.

[Summary of the invention]

The light-receiving member of the present invention includes a first layer made of an amorphous material containing silicon atoms and germanium atoms, and a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity. In the light-receiving member, the light-receiving member has a multi-layered light-receiving layer, in which a layer and a next layer made of an amorphous material containing silicon atoms and carbon atoms are provided in order from the support side. 7. The distribution state of germanium atoms in the photoreceptive layer is non-uniform in the layer thickness direction. -) It has one or more pairs of non-parallel interfaces within the range, and the non-parallel interfaces are arranged in a large number of ζ in at least one direction in a plane perpendicular to the layer thickness direction.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic JJK layout of the present invention.

The present invention has a light-receiving layer having a multilayer structure along the slope of the unevenness on a support (not shown) having an uneven shape smaller than the required resolution of the device, and the light-receiving layer is shown in FIG. As shown in an enlarged view of a part of , since the layer thickness of the second layer 602 changes continuously from d to d6, the interface 603 and the interface 604 have a tendency toward each other. . Therefore, the coherent light incident on this minute part (short range) Z is
Interference occurs in the minute portion 1, producing a minute interference fringe pattern.

In addition, as shown in FIG. 1, the first layer 701 and the second layer 70
If the interface 703 of the second node 702 and the free thorny surface 704 of the second node 702 are non-parallel, the incident light I will be reflected as shown in FIG. 7(A).

Since the traveling directions of the reflected light □ and the emitted light R3 are different from each other, when the interfaces 703 and 704 are parallel (the seventh
The degree of interference is reduced compared to tooth r(B)J).

Therefore, as shown in (0) in Figure 7, when a pair of interfaces are non-parallel (r(A)J,) than when they are parallel (r(B)J), even if they interfere, The difference in brightness of the interference fringe pattern becomes negligible.

As a result, the amount of light incident on the minute portions is averaged.

This is true even if the layer thickness of the second no. 602 is macroscopically non-uniform (d, +d8) as shown in FIG. r in Figure 6 (
D) See J).

In addition, to describe the effect of the present invention in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the 2 + amount of light.

, there are reflected lights R1, R2, R8R, TL. Therefore, in each layer, what is described above similar to FIG. 7 occurs.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, the interference fringes generated in the minute portion (c) do not appear in one image because the size of the minute portion is smaller than the irradiation light spot i, that is, the resolution is smaller than one throw field. Furthermore, even if it appears in the m+ image, it does not substantially cause any trouble because it is below the resolution of the eye.

In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction.

The size l (corresponding to one period of the uneven shape) of the minute portion missed in the present invention satisfies l≦L, where L is the spot diameter of the irradiation light.

In addition, in order to more effectively achieve the object of the present invention, the difference in layer thickness (d5-d6) in the minute portion l is expressed as d s d a a 2 , (n 2 (refractive index of the second layer 602).

In the present invention, J of the minute portion l of the multilayer photoreceptive layer
- The layer thickness of each layer is controlled within the microcolumn so that at least any two layer interfaces are in a non-parallel relationship within the microcolumn (hereinafter referred to as "microcolumn"), but this condition If the following is satisfied, any two layer interfaces may be in a parallel relationship within the microcolumn.

However, the layers forming parallel layer interfaces are uniform in thickness over the entire area so that the difference in layer thickness at any two positions is -(n: refractive index of the layer) or less. The formed surface layer can mainly function as a protective layer for mechanical durability and as an optically antireflection layer.

The surface layer is suitable to function as an antireflection layer when the following conditions are met:

That is, if the refractive index of the surface layer is n1, the layer thickness is d, and the wavelength of the incident light is A, then the refractive index n of the narrow surface 1- satisfies -V1-, and the layer thickness of the surface layer d When d-4-nl or a-8i:H has a refractive index of about 3.3, a material with a refractive index of 1.82 is suitable for the surface layer. a
-810sH can be set to such a value of refractive index by adjusting the amount of 0, and the mechanical durability is 1.
It is the most suitable material for the surface layer because it can fully satisfy the interlayer adhesion and electrical properties.

Further, when the surface layer is intended to serve as an antireflection layer, the thickness of the surface layer is preferably 0.05 to 2 μm.

In order to more effectively and easily achieve the object of the present invention, the following steps are taken to form the first layer and the second layer constituting the photoreceptive layer:
Plasma vapor phase method (POVD method), optical OVD method, thermal OVD method,
A sputtering method is used.

The unevenness provided on the surface of the support can be achieved by fixing a cutting tool having a 7-shaped cutting edge in a predetermined position on a cutting machine such as a milling machine or lathe, and rotating the cylindrical support according to a program designed in advance as desired. However, by regularly moving in a predetermined direction, the surface of the support can be accurately cut to form a desired uneven shape, pitch, and depth.

The inverted V-shaped linear protrusion created by the unevenness formed by such a cutting method has a cotton wire structure centered on the central axis of the cylindrical support.The cotton wire structure of the inverted V-shaped protrusion is , a double or triple cotton wire structure, or a crossed cotton wire structure.

Alternatively, a linear structure along the central axis may be introduced in addition to the cotton wire structure.

The vertical cross-sectional shape of the uneven convex portions provided on the surface of the support is determined by the controlled non-uniformity of the layer thickness within the microcolumns of each layer formed, and by the difference between the support and the layer directly provided on the support. In order to ensure good adhesion and desired electrical contact between the ζ
Preferably, this is substantially an isosceles triangle, a right triangle, or a scalene triangle. Of these shapes, isosceles triangles and right triangles are particularly desirable.

In the present invention, the dimensions of the irregularities provided on the support surface ζ in a controlled manner are set in such a way that the object of the present invention can be achieved as a result, taking into consideration the following points.

That is, firstly, the A-8i layer constituting the photoreceptive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the A-8i photoreceptive layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to completely clean the image formation layer.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

As a result of considering the above-mentioned no-deposition problems, process problems of electrophotography, and conditions for preventing interference fringes, the pitch of the recesses on the surface of the support is preferably 500 μm.
It is desirable that it is ~0.3 ρm, more preferably 200 μm to 1 μm, optimally 50 μm to 5 μm.

Further, the maximum depth of the recess is preferably 0.1 μm to 5 μm.
, more preferably 0.3 μm to 3 μm.

The optimum thickness is preferably 0.6 μm to 2 μm. When the pitch and maximum depth of the recesses on the support surface are within the above range, the slope of the four parts (or linear protrusions) is preferably 1 degree to 20 degrees, more preferably 3 degrees to 15 degrees, Optimally, it is desirable that the number of fakes is 4 to 10 times.

Further, the maximum difference in layer thickness due to the non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0 within the same pitch.
．． 1 μm to 2 μm, more preferably 0.1 μm to 1.5
The thickness is preferably 0.2 μm to 1 μm.

Furthermore, the photoreceptor in the photoreceptor of the present invention is composed of a first layer made of an amorphous material containing silicon atoms and germanium atoms and an amorphous material containing silicon atoms, and exhibits photoconductivity. It has a multilayer structure in which the second layer and the second layer are provided in order from the support side, and the distribution state of germanium atoms in the first layer is non-uniform in the layer thickness direction, resulting in an extremely excellent Indicates electrical, optical, and photoconductive properties, electrical voltage resistance, and use environment characteristics.

In particular, when applied as a light-receiving member for electrophotography, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. It has excellent light fatigue and repeated use characteristics, high density, clear halftones, and high resolution.
High quality images can be stably and repeatedly obtained.

Furthermore, the light-receiving member of the present invention has high photosensitivity in the entire visible light range, and is particularly excellent in photosensitivity characteristics on the long wavelength side, so it is particularly excellent in matching with semiconductor lasers, and has excellent optical response. fast.

Hereinafter, the light receiving member of the present invention will be explained in detail with reference to the drawings.

FIG. 10 is a schematic configuration diagram schematically shown to explain the layer configuration of a light receiving member according to an embodiment of the present invention.

A light-receiving member 1004 shown in FIG. 10 has a light-receiving layer 1000 on a support 1001 for the light-receiving member, and the light-receiving member 1000 has a free narrow surface 1005 on one end surface i. ing.

The photoreceptive layer 1000 is a-8i (H,X) containing germanium atoms (hereinafter "a-S
i G e (H, ) 1003 and a surface layer 1006 are laminated in this order. - The germanium atoms contained in the first layer (G) 1002 are continuous in the layer thickness direction of the first layer (G) 1002 and are separated from the side on which the support 1001 is provided. is possessed in the first layer (G) 1002 so that it is more distributed on the support 1001 side than on the opposite side (the surface 1005 side of the photoreceptive layer 1001). .

In the light-receiving member of the present invention, the distribution state of germanium atoms contained in the first layer (G) is as described above in the layer thickness direction, and the distribution state is parallel to the surface of the support. It is desirable to have a uniform distribution state in the in-plane direction.

In the present invention, the second layer (G) provided on the first layer (G)
)*(S) does not contain germanium atoms, and by forming a light-receiving layer in such a layered structure, it can be used to absorb light from relatively short wavelengths to relatively short wavelengths, including the visible light region. The present invention provides a light-receiving member having excellent photosensitivity to light having wavelengths in the entire range of .

In addition, the distribution state of germanium atoms in the first layer (G) is such that germanium atoms are continuously distributed in the entire layer region,
Since the distribution concentration C of germanium atoms in the layer thickness direction is given a change that decreases from the support side toward the second layer (S), the difference between the first layer (G) and the second layer (S) ( !
: The second layer when using a semiconductor laser, etc., has excellent affinity between The first layer CG) can substantially completely absorb the light on the long wavelength side that cannot be absorbed by (S), and interference due to reflection from the support surface can be prevented.

Further, in the light-receiving member of the present invention, each of the amorphous materials constituting the first layer (G) and the second layer (S) has a common constituent element of silicon atoms. Therefore, chemical stability is sufficiently ensured at the laminated interface.

11 to 19 show typical examples of the distribution state of germanium atoms contained in the first tt4 (G) of the light-receiving member in the present invention in the layer thickness direction.

11 to 19, the horizontal axis represents the germanium atom distribution concentration 0, the vertical axis represents the layer thickness of the first layer (G), and tB represents the thickness of the first layer (G) on the support side. The position of the end face,
tT indicates the position of the end surface of the layer (G) on the opposite side to the support side. That is, the first layer containing germanium atoms (G
), layers are formed from the tB side toward the tT side.

FIG. 11 shows a first typical example of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction.

In the example shown in FIG. 11, the surface on which the first layer (G) containing germanium atoms is formed and the first layer (G)
) The first layer (G) in which germanium atoms are formed while the distribution concentration 0 of germanium atoms takes a constant value Ci from the interface position tB to the position tI where the narrow surface of
The interface position tT is higher than the concentration 0□ than the position t■.
has been gradually and continuously reduced until . Interface position t
At T, the distribution concentration 0 of germanium atoms is 0□.

In the example shown in FIG. 12, the distribution concentration 0 of the germanium atoms contained gradually and continuously decreases from the concentration 04 from the position tB to the position tT, and at the position tT, the concentration 0. The distribution state is formed as follows.

In the case of FIG. 13, from position tB to position t2, the distribution concentration of germanium atoms is set to a constant value of 06, and between position t2 and position tT, the distribution concentration of germanium atoms is gradually and continuously decreased, and At tT, the distribution concentration 0 is substantially zero (here, substantially zero is the case where the droplet is not filtered at the detection limit).

In the case of FIG. 14, the distribution concentration C of germanium atoms gradually decreases continuously from the concentration 08 from the position 1B to the position tT, and becomes substantially zero at the position tT.

In the example shown in FIG. 15, the distribution concentration of germanium atoms is 0, and the concentration of germanium atoms is 0 between position tB and position ti13.
is a constant value, and the concentration is C0° at the order 1i t T. Between the position t3 and the position tT, the distribution density 0 is linearly decreased to the position t and then to the position 1T.

In the example shown in FIG. 16, the distribution density 0 is at position t
From position B to position t4, the density takes a constant value of 01, and from position t4 to position tT, the concentration decreases linearly from 0.2 to 013.

In the example shown in FIG. 17, from position tB to position tT, the distribution concentration of germanium atoms is 0, which is 014.
It decreases in a linear function so as to substantially reach zero.

In FIG. 18, from position tB to position tijjt t
Up to s, the distribution concentration of germanium atoms is 0, and the concentration is 0.
0. The concentration is decreased linearly to 0.6, and the position t
5 and position tT, an example is shown in which the density is set to a constant value of 0□6.

In the example shown in FIG. 19, the distribution concentration 0 of germanium atoms is 0.7 at position 1B, and the concentration decreases slowly at first from this concentration C17 until reaching position 16, and near position t6. , is rapidly decreased to a density of 018 at position t6.

Between the position t6 and the position t7, the decrease is rapid at first, and then the decrease is slow and gradual until the position t7 is reached.
The density becomes 019, and between position wt and position t8,
very slowly and gradually decreased at position t8,
The concentration reaches C2o. Between position t8 and position tT, the concentration is reduced from c2o to substantially zero according to a curve shaped as shown in the figure.

As described above with reference to FIGS. 11 to 19, some typical examples of the distribution state of germanium atoms contained in the first layer (G) in the layer thickness direction, in the present invention, support On the body side, there is a part with a high distribution concentration of germanium atoms of 0, and on the interface t side, the distribution state of germanium atoms has a part where the distribution concentration of 0 is considerably lower than that on the support side. It is provided in layer (G).

The first layer (G) constituting the light-receiving layer constituting the light-receiving member in the present invention preferably has a localized region (G) containing germanium atoms at a relatively high concentration on the support side as described above. It is desirable to have A).

In the present invention, the localized region (A) can be explained using the symbols shown in FIGS. 11 to 19, fJ, interface position tB
It is more desirable that the distance be within 5μ.

In the present invention, the localized region (A) is the interface position rI
It may be the entire layer region (LT) up to 5μ thick from ttB, or it may be a part of the layer region (LT).

Whether the localized region (A) is a part or all of the layer region (LT) is appropriately determined according to the characteristics required of the photoreceptive layer to be formed.

The localized region (A) has a distribution state of germanium atoms contained therein in the layer thickness direction, such that the maximum distribution concentration OmaX of germanium atoms is preferably 1000at1000ato or more, more preferably 50% relative to silicon atoms.
00 atomic ppm or more, optimally lXl0'a
It is desirable that the layers be formed in such a way that a distribution state of atomic ppm or more can be achieved.

That is, in the present invention, the first layer containing germanium atoms has a thickness such that the maximum value Omax of the distribution concentration exists in the layer region of 5μ or less from the support side (tB to 5μI−). It is preferable that it be formed.

In the present invention, the amount of hydrogen atoms (H) contained in the second 11 (S) constituting the light-receiving layer to be formed, the amount of halogen atoms (X), or the amount of violet between hydrogen atoms and halogen atoms The phase (Hx) is preferably 1 to 40 atoms
jc%, more preferably 5-30 atomic%, optimal l
This is preferably set to 5 to 2 S atomic.

In the present invention, the content of germanium atoms contained in the first Ili is appropriately determined as desired so as to effectively achieve the object of the present invention, but is preferably 1 to 9-5X10 atomic ppm, More preferably, it is 100 to 8×10' atomic ppm, most preferably 500 to 7×10 atomic ppm.

In the present invention, the layer thickness of the first layer (G) and the second layer (S) is one of the important factors for effectively achieving the object of the present invention. Considerable care must be taken in the design of the light receiving member to ensure that the desired properties are fully imparted to the light receiving member.

In the present invention, the layer thickness TB of the first layer (G) is preferably 30λ to 50μ, more preferably 40λ to 40μ.
, optimally, it is desirable to set it to 50i to 30μ.

Further, the layer thickness T of the second layer (S) is preferably 0.5 to 9
0μ, more preferably 1-80μ, optimally 2-50μ
It is desirable that this is done.

The layer thickness TB of the first no (G) and the second IfjJ (S
), the sum of the layer thicknesses T (TB + T) of the light receiving member is determined based on the organic relationship between the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. It is appropriately determined according to the requirements during layer laying.

In the light receiving member of the present invention, the above (TB+T)
The numerical range of is preferably 1 to 100p1, more preferably 1 to Bθμ, and most preferably 2 to 50μ.

In a more preferred embodiment of the present invention, the layer thickness TB and the layer thickness T preferably have appropriate numerical values for each when satisfying the relationship TB/T≦1. Preferably selected.

In the above case, the layer thickness TB and the layer thickness TcJ) should be selected so that the relationship TB/T≦0.9 and optimally TB/T≦0.8 is satisfied. Layer thickness TB
It is desirable that the values of and the layer thickness T be determined.

In the present invention, the content of germanium atoms contained in the first layer (G) is I x 10' atomic
ppm or more, it is desirable that the layer thickness TB of the first layer (G) be considerably thinner, preferably 30
It is desirable that the thickness be less than μ, more preferably less than 25 μ, optimally less than 20 μ.

In the present invention, if necessary, the first
Specific examples of the halogen atoms CX'') contained in the layer (G) and the second layer (S) include fluorine, chlorine, bromine, and iodine, with fluorine and chlorine being particularly preferred. It can be eaten as a horse mackerel.

In the present invention, a-S i G e (H,X)
The first layer (G) is formed by, for example, a vacuum deposition method that utilizes a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blasting method. For example, by glow discharge method, a-8ice
In order to form the first layer (G) composed of (H,
Raw material gas for supply, raw material gas for Ge supply that can supply germanium atoms (Ge), and hydrogen atoms (H
) A raw material gas for introduction and/or a raw material gas for introducing norogen atoms (X) is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated within the deposition chamber. , while controlling the distribution concentration of germanium atoms contained on the surface of a predetermined support, which is set in advance at a predetermined position, according to a desired rate of change curve.
(H, In addition to sputtering using a mixed target, it is sufficient to introduce a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) into the sputtering deposition chamber as necessary.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4, Si2H6゜833
Gaseous silicon hydride (silanes) such as H8,5t4H1o, etc., which can be gasified, can be effectively used, especially in terms of ease of handling during layer creation work, good Si supply efficiency, etc. and 8 j H4°S1□H6 are listed as preferred.

As a material that can be a source gas for supplying Ge, GeH
,,Ge2H6,Ge3H8,Qe4Hto,Ge5H
1□.

Ge 6H14,Ge 7H,,,Ge 8H,8,G
Germanium hydride in a gaseous state or capable of being gasified, such as e, H2o, etc., can be mentioned as being effectively used.
In particular, GeH4+Ge 2H, Ge, and H8 are preferred in terms of ease of handling during layer formation work, good Ge supply efficiency, and the like.

Effective raw material gases for introducing halogen atoms used in the present invention include many halogen compounds, such as halogen gases, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into

Further, a silicon hydride compound containing a halogen atom, which is in a gaseous state or can be gasified and whose constituent elements are a silicon atom and a halogen atom, can also be mentioned as an effective compound in the present invention.

Specific examples of chlorine compounds that can be suitably used in the present invention include fluorine, chlorine, and bromine.

Iodine gas/gas, BrF, 01jF, 01
! F3゜BrF, BrF, IP, IF, IOl
.

5s 3 7 Interhalogen compounds such as IBr can be mentioned.

Specifically, silicon compounds containing halogen atoms, Shinkai, and silane derivatives substituted with halogen atoms include, for example, S
IF t S r g Fe + S s O14+
Silicon halides such as S I B r 4 are preferred.

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogenation as a raw material gas capable of supplying 84 together with a raw material gas for supplying Ge is used. Even without using silicon gas,
The first 1-(G) made of a-8iGe containing a halogen atom can be formed on a desired support.

According to the glow discharge method, the first layer containing halogen atoms (
G), basically, for example, a predetermined mixture of silicon halide, which is a raw material gas for supplying Si, germanium hydride, which is a raw material gas for Ge supply, and gases such as Ar, H2, and He, etc. on the desired support by creating a plasma atmosphere of these gases by generating a glow discharge and forming a plasma atmosphere of these gases. Although the first layer (G) can be formed, in order to more easily control the introduction ratio of hydrogen atoms, hydrogen gas or a silicon compound gas containing hydrogen atoms is added to these gases. They may also be mixed in desired amounts to form a layer.

Also, each gas is AA 3g! There is no problem in using not only seeds but also a mixture of multiple types at a predetermined mixing ratio.

In order to form the first layer (G) made of a-S i Ge (H, In the case of the ion blating method, sputtering is performed in a desired gas plasma atmosphere using two targets consisting of St and Ge, or a target consisting of St and Ge.
For example, polycrystalline silicon or single-crystal silicon and polycrystalline germanilam or single-crystal germanium are housed in a deposition boat as evaporation sources, and the evaporation sources are heated and evaporated by a resistance heating method, an electron beam method (EB method), or the like. This can be done by passing the flying evaporated material through a desired gas plasma atmosphere.

At this time, in order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blasting method, a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms is introduced into the deposition chamber. It is sufficient to introduce the gas to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, the raw material gas for hydrogen atom introduction, for example, F2 or the above-mentioned silane or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-bearing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but in addition, HP, HOl.

Halogen compounds such as HBr and HI, 5iH2F.

SiHI, SiHOl, 5 (Ho13°2 2 2
2 S IH, Br 2. Halogen-substituted silicon hydride such as S 1HBr 3, and G e HF , , G e H
2F.

GeH3F, GeHO6,, Ge) (□OA2゜G e
HO72G e HB r t G e H2B r
2 +3 GeHBr, GeHI, GeF2I2. Halides containing hydrogen atoms as one of their constituent elements, such as germanium hydrogenated halides such as Ge3H,I, GeF4. Ge
0A! 4. GeBr,,GeI,.

GeF2. GeO12, GeBr2. Gaseous or gasifiable substances such as germanium halides such as GeI2 can also be mentioned as useful starting materials for forming the first layer (G).

Among these substances, halides containing hydrogen atoms can be used to control electrical or optical characteristics at the same time as introducing halogen atoms into the layer during the formation of the first layer (G). Since atoms are also introduced, it is used as a suitable raw material for halogen introduction in the present invention.

In addition to the above, hydrogen atoms may be structurally introduced into the first layer (G) using F2, SiH4,842H, S
G silicon hydride such as r, H8, S i 4H1o
with germanium or a germanium compound for supplying e, or with GeH4+ Ge 2H6°Ge , H,
, Ge, Hl. , Ge , H12, Ge 6H,4
This can also be carried out by causing germanium hydride such as Ge 2 , H1, Ge 8H18, Ge 2 , H, 0, etc., and silicon or a silicon compound for supplying 81 to coexist in the deposition chamber to generate a discharge.

In a preferred example of the present invention, a lid of hydrogen atoms (H) or a droplet of halogen atoms (X) or a combination of hydrogen atoms and halogen atoms contained in the first layer (G) constituting the photoreceptive layer to be formed is used. The sum of the amounts (H×) is preferably 0.01 to 40
atomtc%, more preferably 0.05-3
0 atomic%, optimally 0.1-25 atomic
It is preferable to set it as %.

In order to control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the first layer (G), for example, the support temperature or/and the amount of hydrogen atoms (H) or halogen atoms ( It is only necessary to control the force, discharge force, etc. of the material used to incorporate X) into the deposition system.

In the present invention, the second
To form the layer (S), the first layer region (G) described above is formed.
) The source material for formation (I) excluding the source material that will become the raw material gas for Ge supply [second layer (8)
Using the material for forming (■)], form the first layer (G).
It can be carried out according to the same method and conditions as in the case of forming .

That is, in the present invention, a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blating method is used to form the second layer (S) composed of a-S L (H, It is made by a vacuum deposition method. For example, by glow discharge method, a-81(H,X)
In order to form the second layer (S) made up of A raw material gas for use and/or introduction of halogen atoms (X) is introduced into a deposition chamber whose interior can be reduced in pressure to generate a glow discharge in the deposition chamber, and a predetermined support that has been installed at a predetermined position is introduced into the deposition chamber. A layer consisting of a-84(H,X) may be formed on the body surface. In addition, when forming by sputtering method, for example, S in an atmosphere of an inert gas such as Ar or He or a mixed gas based on these gases.
When sputtering a target composed of i, a gas for introducing hydrogen atoms (H) and/or halogen atoms (X) may be introduced into the deposition chamber for sputtering.

In the light receiving member 1004 shown in FIG.
This layer 1003 is provided in order to achieve the object of the present invention in terms of durability and light-receiving properties without incident surface.

The surface layer 1006 in the present invention is composed of silicon atoms (St
), a carbon atom (0), and optionally a hydrogen atom (H) or/and a halogen atom (X) (hereinafter referred to as ra-(SixO8x)y(H,X)J) .However, it is composed of O<xs)'<1)-y.

a-(SiO) (H,X) composed of X 1-X
) r 1-y The surface layer 1006 is formed using a plasma vapor phase method (PO'VD method) such as a glow discharge method, a photo-OVD method, or a thermal O2 method.
This is accomplished by a VD method, a sputtering method, an electron beam method, or the like. These manufacturing methods are selected and adopted as appropriate depending on factors such as manufacturing conditions, load on equipment, manufacturing scale, and desired characteristics of the light-receiving member to be manufactured. Surface layer 1 in which carbon atoms and halogen atoms are formed together with silicon atoms, which makes it relatively easy to control the manufacturing conditions for manufacturing a light-receiving member.
The glow discharge method or the sputtering method is preferably employed because of the advantages that it can be easily introduced into the 006.

Furthermore, in the present invention, the surface layer 1006 may be formed using a glow discharge method and a sputtering method in the same apparatus system.

To form the surface layer 1006 by glow discharge method a
The raw material gas for forming (Si)(J-x)y(H+X)ty is mixed with a dilution gas at a predetermined mixing ratio as needed, and then placed in a vacuum deposition chamber where a support is installed. The introduced gas is turned into gas plasma by generating a glow discharge, and a (S I xol -X )y
(H+X) 1-y may be deposited.

In the present invention, a (81)(01-x)y(H+X
) As the raw material gas for forming sy, silicon atoms (S
i) Most of the gaseous substances or gasified substances whose constituent atoms are at least one of carbon atom (0), hydrogen atom (H), and halogen atom (X) may be used.

81.0. When using a raw material gas with Si as a constituent atom as one of H and A raw material gas containing constituent atoms and/or a raw material gas containing X as constituent atoms are mixed at a desired mixing ratio, or a raw material gas containing Si and 0 and H are used as constituent atoms. The raw material gas and/or the raw material gas whose constituent atoms are 0 and X are mixed at a desired mixing ratio, or the raw material gas whose constituent atoms are Si and
A raw material gas containing three constituent atoms of Si, O and H, or
A raw material gas having three constituent atoms, St, O, and X, can be mixed and used.

Separately, C is added to the raw material gas containing St and H as constituent atoms.
A raw material gas containing 8I and X as constituent atoms may be mixed and used, or a raw material gas containing C as constituent atoms may be mixed and used with a raw material gas containing 8I and X as constituent atoms.

In the present invention, F and Ol are suitable as the halogen atoms (X) contained in the surface layer 1006.

Br and I, with F and Ol being particularly preferred.

In the present invention, raw material gases that can be effectively used to form the surface layer 1006 include gaseous materials or substances that can be easily gasified at room temperature and pressure. .

In the present invention, S iH4, S i 2H6, Si, and H whose constituent atoms are SI and H are effectively used as the raw material gas for forming the surface layer 1006.

Silicon hydride gas such as silanes such as S i 4H1o, saturated hydrocarbons having 1 to 4 carbon atoms, for example, saturated hydrocarbons having 1 to 4 carbon atoms, ethylene hydrocarbons having 2 to 4 carbon atoms, Examples include acetylenic hydrocarbons having 2 to 3 carbon atoms, simple halogens, non-halogenated hydrogen, non-halogenated compounds, silicon halides, halogen-substituted silicon hydrides, and silicon hydrides.

Specifically, the saturated hydrocarbons include methane (OH4),
Ethane (0, H6), propane (03H8), n-butane (n-04H1o), pentane (05H,,), ethylene hydrocarbons include ethylene (02H4), propylene (Os Ha), butene-1 ( 04H8),
Butene-2 (04H8), Inbutylene (04H1l
), pentene (Osf41o), acetylene hydrocarbons include acetylene (0□H2), methylacetylene (03H4), butyne (04H6), and simple halogens include halogen gases such as fluorine, chlorine, bromine, and iodine,
Hydrogen halides include F'H and HI.

HOl, HBr, and interhalogen compounds include BrF+
OIF,01F,,OIF,,BrF,,BrF,.

IP,,IP,,IOl,IBr, silicon halide is SiF4.8(,F6,5iO13Br, 5iO1
,Br,.

8 i 0 l Hr 3 , S i O l z I
HS i B r 4 , and the halogen-substituted silicon hydride is SiH, F2, 5iH201.

5iHO/3, 8iH301, 5iH3Br, 5iH2
Br! .

5iHBr3, as silicon hydride, SiH4, 84°HB, Si3H8, Si4H1g, etc.
lane), and so on.

, In addition to these, OF 4 e OOl 410 B r
4t OHF B +OH,F,,OH,F,0H
301,0H3Br,OH,I.

Halogen-substituted paraffinic hydrocarbons such as 02H and Ol,
Fluorinated sulfur compounds such as 8F, SF6, 5i(OH
4), 5i(0□Hs) and other alkyl silicides and 8
i01(OH3)3.510J2(OHa)2-8iO
Silane derivatives such as halogen-containing alkyl silicides such as /, OH1, etc. can also be mentioned as effective.

These surface layer 1006 forming substances are used to form the surface layer 1006 so that the formed surface layer 1006 contains silicon atoms, carbon atoms, halogen atoms, and optionally hydrogen atoms in a predetermined composition ratio. They are selected and used as desired during formation.

For example, 5i can easily contain silicon atoms, carbon atoms, and hydrogen atoms, and can form a layer with desired characteristics.
(OH3)4 and 5jHo/3,5iH2oz2゜840114 as a substance containing a halogen atom, or 84 and -1301 at a predetermined mixing ratio and introduced in a gas state into an apparatus for forming the surface layer 1006. By generating glow discharge, a(SiXOt-x)y(O
A! +H) A surface layer 1006 consisting of xy can be formed.

To form the surface layer 1006 by the sputtering method, a single-crystal or polycrystalline Si wafer, a C wafer, or a wafer containing a mixture of Si and C is targeted, and if necessary, halogen atoms or This can be done by sputtering in various gas atmospheres containing / and hydrogen atoms as coupling elements.

For example, if a Si wafer is used as a target, the raw material gas for introducing 0 and H or/and
The gas may be diluted as necessary, introduced into a deposition chamber for sputtering, and a gas plasma of these gases may be formed to sputter the Si wafer.

Alternatively, St and 0 can be used as separate targets, or by using a single mixed target of Si and C, if necessary, in a gas atmosphere containing hydrogen atoms and/or halogen atoms. This is done by sputtering.

As the raw material gas for introducing 0, H and obtain.

In the present invention, the diluent gas used when forming the surface layer 1006 by a glow discharge method or a sputtering method includes so-called rare gases such as He, Ne,
Preferred examples include Ar.

The surface layer 1006 in the present invention is carefully formed to provide the required properties as desired.

Substances whose constituent atoms are 8i, O, and H or/and In the present invention, a (
So that Six”-x)y(H+X)1-y is formed,
To warp as desired, a (SixOt-x)y(H+
X) ty is made as an amorphous material with pronounced electrically insulating behavior in the environment of use.

In addition, when the surface layer 1006 is provided with the main purpose of improving the characteristics of continuous repeated use and the characteristics of the usage environment, the degree of electrical insulation is relaxed to some extent, and the surface layer 1006 is made of a non-woven material having a certain degree of sensitivity to the irradiated light. As a crystalline material a (
S tx O1-X ) y(H,X)! -y is created.

a-(SixOl-,)y(H,X) on the surface of the second layer
When forming the surface layer 1006 consisting of 1-y, the temperature of the support during layer formation is an important factor that influences the structure and percentage of the formed layer. a-(S i XOs −X > y (
It is desirable that the temperature of the support during layer formation be tightly controlled so that H+X)ty can be created as desired.

In the present invention, the formation of the surface layer 1006 is carried out by appropriately selecting the optimum range in accordance with the method of forming the surface layer 1006 in order to effectively achieve the desired purpose. ~400°0, more preferably 50-350°
0, most preferably 100 to 300°0. The formation of the surface layer 1006 is carried out using glow discharge method or sputtering method, as it is relatively easy to finely control the composition ratio of atoms constituting the layer and control the layer thickness compared to other methods. However, when forming the surface layer 1006 using these layer forming methods, the discharge power during layer formation is created in the same manner as the support temperature described above. Ot □) y (Ht X)
This is one of the important factors that influences the characteristics of t-y.

a having the characteristics for achieving the object of the present invention;
(S i x O1-x ) y (H+ ”) 1
- The discharge power conditions for effectively creating y with good productivity are preferably 10 to 100 OW1, more preferably 20 to 750 W, and most preferably 50 to 650 W.

The gas pressure in the deposition chamber is preferably 0.01 to 1 Torr.

More preferably, it is about 0.1 to 0.5 Torr.

In the present invention, the values in the above-mentioned ranges are listed as desirable numerical ranges for the support temperature and discharge power for creating the surface layer 1006, but these layer creation factors can be determined independently and separately. The optimum value of each layer creation factor is determined based on the mutual organic relationship so that the surface layer 1006 consisting of a (SIXCt-x)y(ntx)1-y with the desired characteristics is formed, rather than the is desirable.

The amount of carbon atoms contained in 1 m of the narrow surface 1006 of the light-receiving member of the present invention is the same as the conditions for forming the surface layer 1006, so that the surface layer 1006 can obtain the desired characteristics to achieve the object of the present invention. This is an important factor.

The amount of carbon atoms contained in the surface layer 1006 in the present invention is determined as desired depending on the type and characteristics of the amorphous material that constitutes the surface layer 1006.

That is, the general formula a-(S i XO1-X ) y
(H +
(a <1), an amorphous material composed of silicon atoms, carbon atoms, and hydrogen atoms (hereinafter, [a-(stbo,
-b) C) (, -e Written as J. However, O<b% c<
i) Amorphous material composed of % silicon atoms, carbon atoms, halogen atoms, and optionally hydrogen atoms (hereinafter referred to as "
It is written as a-(SidO,,)e(H,X)1-eJ.

However, O(d.

It is classified as e<1.

In the present invention, the surface layer 1006 is a-8iaC1-a
, the carbon atoms contained in the surface layer 1006 are preferably 1
c %, more preferably 1 to 80 atomic %, most preferably 10 to 75 atomic %. That is, the a of the previous a S I a O, -a
If expressed as follows, a is preferably 01 to 0.99999
, more preferably 0.2 to 0.99, optimally 0.25 to
It is 0.9.

In the present invention, the surface layer 1006 is a −(S j bO
□-b). When composed of Hl, , c, the surface layer 100
The amount of carbon atoms contained in 6 is preferably 1 x 10-
” to 90 atomic%, more preferably 1
~90 atomjc%, optimally 10-80 atom
It is desirable that the content be c%.

The content of water Si particles is preferably 1 to 40ato
mrc%, more preferably 2 to 35 atomic chi,
The optimum hydrogen content is preferably 5 to 30 atomic %, and a light-receiving member formed with a hydrogen content in this range can be sufficiently applied as a eroded material in practice.

That is, the previous a-(SIbO□-b). Hl,...,c, b is preferably 0.1 to 0.99999,
More preferably 0.1 to 0.99, optimally 0.15 to 0
．． 9, C is preferably 0.6 to 0.99, more preferably 0.65 to 0.98, most preferably 0.7 to 0.95.

The surface layer 1006 is a(s+do1-a)e(H.

X) In the case of x-e, the content of carbon atoms contained in the surface layer 1006 is preferably I
X 10”3-90 atomic%, more preferably 1-90 atomic%, optimally 10-80 at
It is desirable to set it to omic%. The content of halogen atoms is preferably 1 to 2 Qatoms.
It is preferable to set it as ic%, and the light-receiving member prepared when the halogen atom content is within this range can be sufficiently applied in practice. The content of hydrogen atoms contained as necessary is preferably 19 atoms.
It is desirable that the content be 13 atomic % or less, more preferably 13 atomic % or less.

That is, the previous a-(Stdol-(1)6(H+X)t-
d of e, d is preferably 0.1 to 0 if carried out by the optical display of e.
, 99999, more preferably O11-0.99, optimally 0.15-0.9, e preferably 0.8-0.99
More preferably from 0.82 to 0.99, most preferably from 0.85 to
It is desirable that it be 0.98.

The number range of the layer thickness of the surface layer 1006 in the present invention is one of the important factors for effectively achieving the object of the present invention.

In order to effectively achieve the purpose of the present invention, the desired amount of carbon atoms and the relationship between the layer thicknesses of the first and second layers are determined depending on the characteristics required for each layer. It is necessary to decide as appropriate based on the desired organic relationship.

In addition, it is desirable to take into consideration economic efficiency, which takes into account productivity and f-productivity.

The layer thickness of the surface layer 1006 in the present invention is preferably 0.003 to 30p, preferably 0.004 to 20p.
1. The optimum value is 0.005 to 10μ.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include Ni0r and stainless steel.

Al, Or, Mo, Au, Nb, Ta, V, Ti.

Examples include metals such as Pt and Pd, or alloys thereof.0 Examples of the electrically insulating support include synthetic resins such as polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, and polyamide. films or sheets, glass, ceramics, paper, etc. are commonly used. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, Ni0r is applied to its surface.

Al, Or, Mo, Au, I(, Nb, Ta, V.

T t t P t , P d t In 2J s
S n 02 t I T O (I n 203 +
Conductivity is imparted by providing a thin film made of S n O□), or if it is a synthetic resin film such as a polyester film, Ni0r.

Al, Ag, Pb, Zn, Ni, Au, Or.

A thin film of metal such as Mo, Ir, Nb, 'I'a, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal. Conductivity is imparted to the surface. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light-receiving member 1004 in FIG. If used as a component, in the case of continuous high-speed copying,
It is desirable to have an endless belt shape or a cylindrical shape. The thickness of the support is determined appropriately so that a desired light-receiving member is formed, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. In such cases, the thickness is preferably 10μ or more from the viewpoints of manufacturing and handling of the support, mechanical strength, etc., according to Hyakuen et al.

Next, an outline of an example of the method for manufacturing the light receiving member of the present invention will be explained.

FIG. 20 shows an example of a light-receiving member manufacturing apparatus.

In the figures, gas cylinders 2002 to 2006, 2051, and 2052 are sealed with raw material gases for forming the light receiving member of the present invention. 999%, below 8 i
H4 gas) cylinder, 2003 is GeH4 gas (pure W9
9.999%, hereinafter abbreviated as G e H4) to Hon., 20
04 is SiF gas (purity 99.99%, hereinafter referred to as SiF4
2005 is He gas (purity 99.99)
9%) cylinder, 2006 is H2 gas (pure 1f99.99
9%) cylinder, 2051 is Ar gas (purity 99.999
%) cylinder, 2052 is OH4 gas (purity 99.999
h) It is a cylinder.

In order to cause these gases to flow into the reaction chamber 2001, the pulps of gas cylinders 2002-2006, 2051.2052 2022-2026, 2045°2046! Confirm that J-kupulp 2035 is closed, and that inflow pulp 2012~2016.2043.2044, outflow pulp 2017~2021.2041.2042, and auxiliary pulp 2゜32.2033 are open. After confirming, open the main pulp 2034 and open the reaction chamber 2001.
and exhaust the inside of each gas pipe. Next, when the reading of the vacuum gauge 2036 becomes approximately 5X10-'torr, the auxiliary pulps 2032, 2033, the outflow pulps 2017 to 2021.
Close 2041.2042.

Next, to give an example of forming a light receiving layer on the cylindrical substrate 2037, 5jH from the gas cylinder 2002 is used.
4 gas, G e H4 gas from gas cylinder 2003, 2
Pulp H2 gas from 006 2022.2023.20
26 and outlet pressure gauge 2027, 2028.203
Adjust the pressure of 1 to 1 kg/d, and inflow pulp 2012, 2.
013° 2016 are gradually opened and flowed into the mass 70 controllers 2007, 2008, and 2011, respectively.

Subsequently, outflow pulp 2017, 2018゜2021,
The auxiliary pulps 2032 and 2033 are gradually opened to allow the respective gases to flow into the reaction chamber 2001. S i at this time
The outflow pulp 2017, 2018, so that the H4 gas flow rate and the ratio of GeH4 gas flow rate and H2 gas flow rate become the desired values.
2021, and also adjust the opening of the main pulp 2034 while checking the reading on the vacuum gauge 2036 so that the pressure inside the reaction chamber 2001 reaches the desired value. And base 2
The temperature of 037 is set to 50 to 40 by heating heater 2038.
After confirming that the temperature is set within the range of 0°0, the power supply 2040 is set to the desired power and the reaction chamber 20°
A glow discharge is generated in the pulp 201, and at the same time, the flow rate of G e Hj gas is controlled manually or by an external drive motor, etc. according to a pre-designed rate of change curve.
The distribution concentration of germanium atoms contained in the formed layer is controlled by performing an operation of gradually changing the opening of No. 8.

As described above, the first layer (G) is formed on the base 2037 to a desired layer thickness by maintaining glow discharge for a desired time. At the stage where the first layer (G) has been formed to the desired layer thickness, the discharge pulp 2018 is completely closed and the discharge conditions are changed as necessary, but the same conditions and procedures are followed to apply the hidden glow at the desired time. By maintaining the discharge, a second layer (S) substantially free of germanium atoms can be formed on the first layer (G).

After forming the second layer (S), the mass 70-controllers 2007 and 2048 are set to a predetermined flow rate, but the glow discharge is maintained for a desired time according to the same conditions and procedures. A surface layer mainly composed of silicon atoms and carbon atoms can be formed on the layer (S).

During layer formation, it is desirable that the substrate 2037 be rotated at a constant speed by a motor 2039 in order to ensure uniform layer formation.

Examples will be described below.

Example I A! Support body (length L) 357 mm, diameter Cr) 80 mm)
was machined with a lathe as shown in FIG. 21 (P: pitch, D: depth) under the conditions shown in the second machine.

C4201-204) Next, under the conditions shown in Table 1, an electrophotographic light-receiving member of a-8l:H was produced using the deposition apparatus shown in FIG. 20 according to the repeated operating procedures. (Samples 4201 to 204) The first layer B-(Si;Ge):H layer is Ge
The flow rates of H4 and SiH4 were controlled as shown in FIG. 22 using a GeH4 and SiH4 mass flow controller (HP9845B).

When the layer thickness of each layer of the light-receiving member produced in this way was measured using an electron microscope, it was found that
204) results were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus (laser light wavelength: 780 nm, spot diameter: 80 μm) shown in FIG. 26I, and then transferred to obtain an image. No interference fringe pattern was observed in any of the images of /16201 to 204, which were sufficient for practical use.

Example 2 A, ll' support (length L) 357iy+, diameter (r)
80 mm) was machined on a lathe under the conditions shown in Table 3 as shown in Figure 21 (P: pitch t D: M).
Samples/16301-304) Next, under the conditions shown in Table 1, the deposition apparatus 304 in Figure 20 was used.
The mass 70 controllers 1236 and 1232 of GeH4 and SiH4 were controlled by a computer (HP9845B) so that the flow rates of GeH4 and SiH4 were as shown in FIG.

When the layer thickness of each layer of the light-receiving member prepared in this manner at °C was measured using an electron microscope, the results are shown in Table 3 (Sample/16301
~304) results were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 sm), and then developed and transferred to obtain an image. No interference fringe pattern was observed in any of the images of samples 4301 to 304, which were sufficient for practical use.

Example 3 A! Support body (length L) 357mm, diameter (r) 80in
) under the conditions shown in Table 5 in Figure 21 (P: pitch, D:
It was machined using a lathe as shown in (depth).

(Sample/% 501-504) Next, under the conditions shown in Table 4, a-8i:H electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures. (Sample/16501-504) The first layer a-(Si;Ge):H layer is composed of GeH,
and the flow rate of SiH4 as shown in Figure 24,
GeH4 and SiH4 mass 7 controller 12
36 and 1232 on computer (HP9845B
) was controlled.

When the layer thickness of each layer of the light-receiving member produced in this way was measured using an electron microscope, it was found that
4) results were obtained.

These electrophotographic light-receiving members were subjected to image exposure using an image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 μm), and then developed and transferred to obtain an image. No interference fringe pattern was observed in any of the images of samples A301 to A504, which were sufficient for practical use.

Example 4 AJ support (length L) 3571i? Under the conditions shown in Fig. 6, the radius (r) is 80 mm (P: pitch, D:
It was machined using a lathe as shown in (depth).

(Samples 601 to 604) Next, aSi:H electrophotographic light-receiving members were produced using the deposition apparatus shown in FIG. 20 according to various operating procedures under the conditions shown in Section 4. (Samples 4601 to 604) The first layer a-(S i ;Ge ):H layer is
The GeH4 and SiH4 mass flow controllers 2-1236 and 1232 are connected to a computer (H
P9845B).

The 1-thickness of the valley layer of the light-receiving member thus produced was measured using an electron microscope, and the results are shown in Table 6 (Sample/16601
~604) results were obtained.

For these electrophotographic light-receiving members, T:m image exposure is performed using the image exposure apparatus shown in FIG. 26 (laser light wavelength: 780 nm, spot diameter: 80 pm), and the image is transferred to form image 1. I got an elephant. Samples 4601-604
No interference fringe pattern was observed in any of the images, which were sufficient for practical use.

The photoreceptive layer consisting of the first layer and the second layer 9 is deposited by sputtering using the apparatus shown in the figure as follows: . In this example, a sputtering target with a thickness of 5 ttrm made of Si and Ge is placed on the cathode electrode when depositing the first layer, and a sputtering target with a thickness of 5 ttrm made of Si and Ge is placed on the cathode electrode when depositing the second layer. At the time of narrow layer deposition, a sputtering target made of SL and a sputtering target made of graphite were spread on one side so that their area ratios were as shown in Table 7.

Next, the manufacturing procedure will be explained. As in Example 1, the pressure inside the deposition apparatus was reduced to 10-7 Torr, and the temperature of the AJ support was decreased to 2.
Keep it constant at 50°0. After that, Ar gas was added to 200SOO
M, H, gas is 11005OO, and the internal pressure of the deposition apparatus is 5.
Main pulp 20 so that X10-"ToIrr
Adjusted at 34. Then, a high frequency power of 300 W was applied between the cathode electrode and the AI support to generate glow discharge. In this way, the first layer was deposited to a thickness of 5 μm.

Next, the target made of Si and Ge was replaced with a target made of Si, and a second layer with a thickness of 20 μm was deposited under the same conditions.

After that, the target made of Si on the cathode electrode was removed and replaced with a target made of Si and a target made of graphite, and a surface layer of 0.3μ
m deposited. The surface direction of the surface layer was approximately parallel to the surface of the second layer.

Light-receiving members were produced by changing the conditions for producing the surface layer as shown in Table 7.

Each of the 'electrophotographic light-receiving members thus obtained was image-wise exposed to laser light in the same manner as in Example 1 to form an image.
After repeating the current one-house cleaning process about 50,000 times, we conducted a single-item evaluation and obtained the results shown in Table 7.

Example 6 Completely the same as sample/16201 of Example 1 except that when forming the surface layer, the flow rate ratio of SiH4 gas and OH4 gas was changed to change the content ratio of silicon atoms and carbon atoms in the surface layer. Each of the electrophotographic light-receiving members was produced by a method. For each of the electrophotographic light-receiving members obtained in this way, the process of laser image exposure and transfer was repeated approximately 50,000 times in the same manner as in Example 1, and then image evaluation was performed, and the results are shown in Table 8. I got it.

Example 7 When forming the surface layer, Si H4 gas, 5jF4 gas.

Each of the electrophotographic light-receiving members was prepared in exactly the same manner as Sample 4201 of Example 1, except that the flow rate ratio of OH4 gas was changed to change the ratio of silicon atoms to carbon atoms in the surface layer. It was created.

Each of the electrophotographic light-receiving members thus obtained was imaged with a laser beam in the same manner as in Example 1. After repeating the steps of exposure, image formation, development, and cleaning about 50,000 times, image evaluation was performed, and results similar to those of No. 9 were obtained.

Example 8 Sample/162 of Example 1 except that the layer thickness of the surface layer was changed.
Each of the electrophotographic light-receiving members was produced in exactly the same manner as No. 01. For each of the electrophotographic light-receiving members thus obtained, the steps of image formation, development, and cleaning were repeated in the same manner as in Example 1 to obtain the results shown in Table 10.

Example 9 An electrophotographic light-receiving member was prepared in the same manner as in Sample 201 of Example 1, except that the discharge power during the preparation of the surface layer was 300 W and the average layer thickness was 2 μm.

The average layer thickness difference between the surface layer of the electrophotographic light-receiving member thus obtained was 0.5 μm between the center and both ends. Also,
The difference in layer thickness at the minute portion was 0.1 μm. In such an electrophotographic light-receiving member, no interference fringes were observed, and the image was created, developed, and cleaned using the same equipment as in Example 1.
After repeated steps, the product was durable enough for practical use.

〔Effect of the invention〕

As described above in detail, the present invention is suitable for image formation using coherent monochromatic light, easy to manage manufacturing, and has excellent wear resistance, especially interference fringes that appear when forming an image. And a light-receiving member with excellent light-receiving properties can be provided.

1st person Table 2 Table 3 Part 4 2 Table 5 Table 6 Table 10

[Brief explanation of the drawing]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member FIG. 5 is an explanatory diagram of interference fringes caused by scattered light. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 7 is an explanatory diagram showing that interference fringes do not appear when the layers are parallel. FIG. 7 is an explanatory diagram illustrating a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. Fig. 8 is an explanatory diagram of the fact that no interference fringes appear when the interfaces of each layer are non-parallel. Fig. 9 is an explanatory diagram of the surface condition of typical supports. Fig. 10 11 to 19 are explanatory diagrams for explaining the distribution state of germanium atoms in the first layer. FIG. 20 is an explanatory diagram of the layer structure of the light receiving member. FIG. 21 is an explanatory diagram of the photoreceptive layer deposition apparatus used. FIG. 21 is an explanatory diagram of the surface state of the Al support used in the examples. FIG. 26 is an explanatory diagram showing changes in flow rate. FIG. 26 is an explanatory diagram of the image exposure apparatus used in the example. 1000... Town...・
・Light receiving layer 1001...Moe...
......A7 support body 1002...
・Song...Song・■Same No. 1 No. 1m1003...
・・・・・・・・・・・・・・・・・・ Song second layer 10
04・・・・・・・・・・・・・・・・・・・・・・・・
・・Light receiving member 1005・・・・・・・・・・・・・
・・・・・・・・・・・・Song・ Free surface of light receiving member 1
006・・・・・・・・・・・・・・・・・・・・・
・・ Thorn layer 2601・・・・・・・・・・・・・・・
......... Electrophotographic light-receiving member 2602... Song... Musician... Semiconductor laser 2603...・・・・・・・・・
・・・・・・・・・・・・ fθ lens 2604...
・・・・・・・・・・・・・・・・・・・・・・・・
Polygon mirror 2605・・・・・・・・・・・・・・・
・・・・・・・・・・・・・・・ Plan view 2 of exposure device
606・・・・・・・・・・・・・・・・・・・・・
・・・・・・・・・ Side view of exposure device No. 30 4th garden □ C 17th 78th θCtc −−−−−= Beniq Haruma (/? Ji Haruma (9) 6-/, ~er-d Φ

Claims (17)

[Claims] (1) A first layer made of an amorphous material containing silicon atoms and germanium atoms; a second layer made of an amorphous material containing silicon atoms and exhibiting photoconductivity; In a light-receiving member having a light-receiving layer with a multilayer structure in which a surface layer made of an amorphous material containing carbon atoms is provided in order from the support side, the distribution of germanium atoms in the first layer. The state is non-uniform in the layer thickness direction, and the photoreceptive layer has one or more pairs of non-parallel interfaces within a short range, and the non-parallel interfaces are in at least one direction in a plane perpendicular to the layer thickness direction. A light-receiving member characterized in that a large number of light-receiving members are arranged. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light-receiving member according to claim 1, wherein the crease range is 0.3 to 500μ. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on irregularities arranged in regular groups on the surface of the support. (6) The light-receiving member according to claim 5, wherein the unevenness is formed by an inverted V-shaped linear protrusion. (7) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially an isosceles triangle. (8) The light-receiving member according to claim 6, wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a right triangle. (9) The light-receiving member according to claim 6 (i), wherein the vertical cross-sectional shape of the inverted V-shaped linear protrusion is substantially a scalene triangle. (10) Claim 1, wherein the support body is cylindrical.
The light-receiving member described in 2. (11) The light-receiving member according to claim 10, wherein the inverted V-shaped linear protrusion has a spiral structure within the center of the support. (12) The light-receiving member according to claim 11, wherein the @-marked screw structure is a multi-screw structure. (13) The light-receiving member according to claim 6, wherein the inverted V-shaped linear protrusion is divided in the direction of its ridgeline. (14) The light-receiving member according to claim 10, wherein the ridgeline direction of the inverted V-shaped linear protrusion is along the central axis of the cylindrical support. (15) Claim 5, wherein the unevenness has an inclined surface.
The light-receiving member described in 2. (16) The light-receiving member according to claim 15, wherein the inclined surface is mirror-finished. (17) The light-receiving member according to claim 5, wherein the free surface of the light-receiving layer has projections and depressions arranged at the same pitch as the projections and depressions provided on the surface of the support.