JPS60208824A - 気相成長装置 - Google Patents
気相成長装置Info
- Publication number
- JPS60208824A JPS60208824A JP6606484A JP6606484A JPS60208824A JP S60208824 A JPS60208824 A JP S60208824A JP 6606484 A JP6606484 A JP 6606484A JP 6606484 A JP6606484 A JP 6606484A JP S60208824 A JPS60208824 A JP S60208824A
- Authority
- JP
- Japan
- Prior art keywords
- cooling
- chamber
- reaction
- gas
- transparent plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001816 cooling Methods 0.000 claims abstract description 79
- 239000000112 cooling gas Substances 0.000 claims abstract description 60
- 239000012495 reaction gas Substances 0.000 claims description 47
- 239000007789 gas Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 25
- 238000001947 vapour-phase growth Methods 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000005855 radiation Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 239000012071 phase Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 239000010453 quartz Substances 0.000 abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 32
- 229910052710 silicon Inorganic materials 0.000 abstract description 32
- 239000010703 silicon Substances 0.000 abstract description 32
- 239000013078 crystal Substances 0.000 abstract description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 5
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 3
- 230000004907 flux Effects 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 238000012423 maintenance Methods 0.000 description 7
- 239000007795 chemical reaction product Substances 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- PPKPKFIWDXDAGC-IHWYPQMZSA-N (z)-1,2-dichloroprop-1-ene Chemical compound C\C(Cl)=C\Cl PPKPKFIWDXDAGC-IHWYPQMZSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6606484A JPS60208824A (ja) | 1984-04-03 | 1984-04-03 | 気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6606484A JPS60208824A (ja) | 1984-04-03 | 1984-04-03 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60208824A true JPS60208824A (ja) | 1985-10-21 |
| JPH0518250B2 JPH0518250B2 (enrdf_load_stackoverflow) | 1993-03-11 |
Family
ID=13305048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6606484A Granted JPS60208824A (ja) | 1984-04-03 | 1984-04-03 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60208824A (enrdf_load_stackoverflow) |
-
1984
- 1984-04-03 JP JP6606484A patent/JPS60208824A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0518250B2 (enrdf_load_stackoverflow) | 1993-03-11 |
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