JPS60191092A - ビ−ムアニ−ル結晶成長法 - Google Patents
ビ−ムアニ−ル結晶成長法Info
- Publication number
- JPS60191092A JPS60191092A JP4218584A JP4218584A JPS60191092A JP S60191092 A JPS60191092 A JP S60191092A JP 4218584 A JP4218584 A JP 4218584A JP 4218584 A JP4218584 A JP 4218584A JP S60191092 A JPS60191092 A JP S60191092A
- Authority
- JP
- Japan
- Prior art keywords
- region
- single crystal
- scanning
- side end
- trajectory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002109 crystal growth method Methods 0.000 title claims description 5
- 239000007788 liquid Substances 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 239000010409 thin film Substances 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 45
- 238000000034 method Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/22—Heating of the molten zone by irradiation or electric discharge
- C30B13/24—Heating of the molten zone by irradiation or electric discharge using electromagnetic waves
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4218584A JPS60191092A (ja) | 1984-03-07 | 1984-03-07 | ビ−ムアニ−ル結晶成長法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4218584A JPS60191092A (ja) | 1984-03-07 | 1984-03-07 | ビ−ムアニ−ル結晶成長法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60191092A true JPS60191092A (ja) | 1985-09-28 |
JPH0153240B2 JPH0153240B2 (enrdf_load_stackoverflow) | 1989-11-13 |
Family
ID=12628942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4218584A Granted JPS60191092A (ja) | 1984-03-07 | 1984-03-07 | ビ−ムアニ−ル結晶成長法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60191092A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007031209A1 (de) * | 2005-09-12 | 2007-03-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur rekristallisierung von schichtstrukturen mittels zonenschmelzen, hierfür verwendete vorrichtung und dessen verwendung |
US7652206B2 (en) | 2007-03-13 | 2010-01-26 | Yamaha Corporation | Drum and manufacturing method of cylinder thereof |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56169200A (en) * | 1980-05-06 | 1981-12-25 | Texas Instruments Inc | Manufacture of single crystal on insulator |
-
1984
- 1984-03-07 JP JP4218584A patent/JPS60191092A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56169200A (en) * | 1980-05-06 | 1981-12-25 | Texas Instruments Inc | Manufacture of single crystal on insulator |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007031209A1 (de) * | 2005-09-12 | 2007-03-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur rekristallisierung von schichtstrukturen mittels zonenschmelzen, hierfür verwendete vorrichtung und dessen verwendung |
US7713848B2 (en) | 2005-09-12 | 2010-05-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for re-crystallization of layer structures by means of zone melting, a device for this purpose and use thereof |
US7652206B2 (en) | 2007-03-13 | 2010-01-26 | Yamaha Corporation | Drum and manufacturing method of cylinder thereof |
Also Published As
Publication number | Publication date |
---|---|
JPH0153240B2 (enrdf_load_stackoverflow) | 1989-11-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |